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MAR 703 MOSFET TRANSISTOR

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Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9 , HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL , RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po , PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Mitsubishi
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RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line rd15hvf11 rd15hvf 175MH 520MH
Abstract: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor , .2.0 MAR 2009 1/6 ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP ABSOLUTE MAXIMUM RATINGS (Tc , subject to change. ERF7530 Rev.2.0 MAR 2009 2/6 ERF7530 RF Power MOSFET - 30MHz / 75 Watt , 0.38 0.11 0.1 Rev.2.0 MAR 2009 4/6 ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP , MAR 2009 ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP The data and specifications provided EKL Components
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100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet
Abstract: 80V/100V MOSFET 934026570127 T C 3 31-Mar-05 30-Jun-05 None Standard End of , Date Replacement Part Customer Comments 1 2PA733P PNP general purpose transistor , PNP general purpose transistor 934000080412 T M 3 31-Dec-04 30-Jun-05 BC557B Inactive part. See Replacement. 3 2PC945P NPN general purpose transistor 934000120116 T M , purpose transistor 934000120126 T M 3 31-Dec-04 30-Jun-05 BC547B Inactive part Philips Semiconductors
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OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 VY22418A2 VY27199A2 VY27289-2 VY27329-2 VP22565 VY27357A3
Abstract: transistor MJE18004 and opto-isolator MOC8102 are utilized. 1. INTRODUCTION As the resolution of modern , capacitors, C,-n, and the switching stresses on the power transistor(s) due to wide range of V^c- Some , transistor. Assuming that the primary inductance and input power are constant Pin = Lp lpk2 fs/2 (Energy law , (MOSFET) MOTOROLA AN 1080 c + 10V o 1N4740A ì VCC MOTOROLA UC3843A C5 -â ' »'-?-W\r- , . Current-Mode Controller and Sync Circuit for MJE18004 (Bipolar Junction Transistor) 2.3 DESIGN OF OUTPUT -
OCR Scan
EE40 core schematic diagram cga to vga converter 464wp motorola optocoupler H7C4 cj TL431 transistor AN1080/D AN1080 08Q/D
Abstract: supply. The state-of-the-art perforated emitter epi-collector bipolar power transistor MJE18004 and , the switching stresses on the power transistor(s) due to wide range of VCC. Some previous designs , working duty cycle D of the power transistor. Assuming that the primary inductance and input power are , Controller and Sync Circuit for MTP4N90 (MOSFET) http://onsemi.com 5 AN1080/D Since the maximum , Figure 6. Current Mode Controller and Sync Circuit for MJE18004 (Bipolar Junction Transistor) 2.3 ON Semiconductor
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OPTO MOC8102 ETD-39 etd39 MC3423P 5d-11 power thermistor pst 39
Abstract: replacement. See 12NC 934002930112 MOPPL CUSTOM ALPS JAPAN IN HS5 935264126118 T S 2 31-Mar , BAV70/FD High-speed double diode 933926900215 T C 3 31-Mar-03 1-Apr-03 BAV70 , 3 31-Mar-03 30-Jun-03 BAV70 Replacement type is nearest equivalent 14 BAW56/HP High-speed double diode 934040690235 T S 3 31-Mar-03 30-Jun-03 BAW56 Replacement type is nearest equivalent 15 BAW56/HP High-speed double diode 934040690215 T S 3 31-Mar Philips Semiconductors
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TDA8842 s1 ALP018TT BLV1819-30 TDA8842 S1 tda8842 s1 datasheet TDA8842 S1 TDA4859ps 1N4151 1N4148 1N4532 1N4531 VPS10101-6 VT21898A4
Abstract: 1800-1970 MHz power transistor 934040160115 T M 3 30-Sep-02 31-Dec-02 None Noted , Silicon diffused power transistor 934044510127 T M 3 30-Jun-02 31-Dec-02 BU4515AX , -50YT Standard Discontinuation. See Replacement. 44 BUK72150-55 TrenchMOS transistor 934054959118 T , BUK7230-55 TrenchMOS transistor 934054953118 T M 3 30-Jun-02 31-Dec-02 BUK7230-55A Standard Discontinuation. See Replacement. 46 BUK7237-55 TrenchMOS transistor 934054955118 T Philips Semiconductors
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TDA8361E tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 1N4001G 1N5059 1N4001ID BYD13J 1N4002G VY27257-2
Abstract: Latch Transceiver w/Master Reset 9352 Latch Transceiver w/Master Reset 9352 7-bit MOSFET driver 9352 , sample expected Mar 2000 sample expected Mar 2000 Ident Replacement Ident Replacement Ident Philips Semiconductors
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PCA1318P philips Pca1318p tda8369 TEA5713 pca1318 ON4801 DN-42 56740/SO-40 56741/SO-56 74ABT16244-1DGG 74ABT16244-1DL 74ABT16245-1DL
Abstract: Christian Turuta Activ Active SMD components marking mar king codes databook INTRODUCTION 1. 2 , (Zetex) or a n-channel jFET transistor MMBF5486 (Motorola) or a pnp-digital transistor MUN2131 (Motorola) or a pnp-digital transistor UN2117 (Panasonic) or a CMOS-integrated circuit- voltage detector with , ESD-Prot ElectroStatic Discharge Protection thyristor -FET Field Effect Transistor -FET* FET with integrated gate protection diode -FETd FET, depletion type -FETe FET, enhancement type MMIC -MOSFET Turuta
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transistor smd zG 1e STK and STR integrated circuits STR-Z4579 Turuta ELM85361A transistor 5d smd
Abstract: IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small signal , modamp mosfet n-ch npn o/p p-ch pin pkg pnp prot res s ser Si substr sw Vce Vcc junction field effect -
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45
Abstract: effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small -
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TRANSISTOR SMD T1P BAW92 smd transistor A6a a4s smd transistor transistor SMD P2F schottky diode s6 81A BAV105 LL4148 LL4448 BB241 BB249 LL914
Abstract: BC846A Phi ITT N BC546A FMMT3904 Zet N 2N3904 MMBT3904 Mot N 2N3904 IRLML2402 IR F n-ch mosfet 20V 0.9A , transistor with a Vc e (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation , diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 50V 100mA npn sw + 10k base res DC-8GHz MMIC amp 16dB , 18V 0.3W zener 18V 0.3W zener BC546A BC546A BC546A BC546A BC546A BC546A 2N3904 2N3904 n-ch mosfet 20V , mosfet 30V 0.9A 2N2222 2N2222 2N2222 2N2222 dual cc GP RF pin diode MPSA20 MPS3904 p-ch mosfet 20V 0.6A SMD Code Book
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Transistor NEC 05F hp2835 diode T2D DIODE 3w 2n2222 as equivalent for bfr96 NDS358N mmbf4932 LL4150 BB219 LL300 BA682 BA683 BA423L
Abstract: PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 zener 200mW 2.0V 50V 100mA npn sw , Roh Roh Roh Mot MUN5313DW1 Mot 13R S913TR SOT143R dg mosfet MOSIC 9V uhf tv tuners , 2N3904 2N3904 n-ch mosfet 20V 0.9A 2N3904 2N3904 2N3904 2N3904 2N3904 2N3904 BC546B BC546B BC546B BC546B BC546B BC546B 2N2222 2N2222 n-ch mosfet 30V 0.9A 2N2222 2N2222 2N2222 2N2222 dual cc GP RF pin diode MPSA20 MPS3904 p-ch mosfet 20V 0.6A BC457 BC456 BC456 BC456 BC456 MPSA42 300V npn p-ch mosfet 30V 0.6A -
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smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg Transistor SMD a7s smd transistor WW1 2SC3603 PDTA143ET SSTPAD10 SO2369R BST82 MRF5711L
Abstract: large values of total MOSFET gate capacitance at high turn-on and turn-off speeds. An internal clamp limits voltage on the MOSFET gate to 12.5 V. An external gate drive resistor, RGATE, limits the rise , the layout and other considerations. A 10-k resistor close to the gate of the MOSFET, between the , milliseconds). If VCC bias voltage is quickly removed after UVLO, the normal discharge transistor on VCOMP , 6.39 A + I RIPPLE 2 1.28 A = 7.03 A 2 The minimum value of the boost inductor is calculated Texas Instruments
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UCC28019 SLUS755B ATX 350W schematic diagram atx power supply 350W circuit diagram UCC28019D UCC28019P
Abstract: large values of total MOSFET gate capacitance at high turn-on and turn-off speeds. An internal clamp limits voltage on the MOSFET gate to 12.5 V. An external gate drive resistor, RGATE, limits the rise time , layout and other considerations. A 10-k resistor close to the gate of the MOSFET, between the gate and , discharge transistor on VCOMP loses drive and the large capacitor could be left with substantial voltage on , PEAK (max) + I L _ PEAK (max) = 6.39 A + I RIPPLE 2 1.28 A = 7.03 A 2 The minimum value of the Texas Instruments
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ucc28019 350W ISO/TS16949
Abstract: large values of total MOSFET gate capacitance at high turn-on and turn-off speeds. An internal clamp limits voltage on the MOSFET gate to 12.5 V. An external gate drive resistor, RGATE, limits the rise , the layout and other considerations. A 10-k resistor close to the gate of the MOSFET, between the , milliseconds). If VCC bias voltage is quickly removed after UVLO, the normal discharge transistor on VCOMP , 6.39 A + I RIPPLE 2 1.28 A = 7.03 A 2 The minimum value of the boost inductor is calculated Texas Instruments
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Abstract: large values of total MOSFET gate capacitance at high turn-on and turn-off speeds. An internal clamp limits voltage on the MOSFET gate to 12.5 V. An external gate drive resistor, RGATE, limits the rise time , layout and other considerations. A 10-k resistor close to the gate of the MOSFET, between the gate and , discharge transistor on VCOMP loses drive and the large capacitor could be left with substantial voltage on , PEAK (max) + I L _ PEAK (max) = 6.39 A + I RIPPLE 2 1.28 A = 7.03 A 2 The minimum value of the Texas Instruments
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Abstract: designed with a current-optimized structure to directly drive large values of total MOSFET gate capacitance at high turn-on and turn-off speeds. An internal clamp limits voltage on the MOSFET gate to 12.5 , -kâ"¦ resistor close to the gate of the MOSFET, between the gate and ground, discharges stray gate capacitance , voltage is quickly removed after UVLO, the normal discharge transistor on VCOMP loses drive and the large , PEAK (max) = I IN _ PEAK (max) + I L _ PEAK (max) = 6.39 A + I RIPPLE 2 1.28 A = 7.03 A 2 Texas Instruments
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Abstract: large values of total MOSFET gate capacitance at high turn-on and turn-off speeds. An internal clamp limits voltage on the MOSFET gate to 12.5 V. An external gate drive resistor, RGATE, limits the rise , the layout and other considerations. A 10-k resistor close to the gate of the MOSFET, between the , milliseconds). If VCC bias voltage is quickly removed after UVLO, the normal discharge transistor on VCOMP , 6.39 A + I RIPPLE 2 1.28 A = 7.03 A 2 The minimum value of the boost inductor is calculated Texas Instruments
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1026 soic-8
Abstract: Representative. http://onsemi.com 2 Table of Contents Power MOSFET Numeric Data Sheet Listing and , ://onsemi.com 4 Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device , . . . . . . . . . . . 27 NTD20N03L27 . . . . . . . . . . . . . . . Power MOSFET 20 Amps, 30 Volts , . . . . . . Power MOSFET 20 Amps, 60 Volts N­Channel DPAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 NTD3055­094 . . . . . . . . . . . . . . . Power MOSFET 12 Amps, 60 Volts N­Channel ON Semiconductor
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E3P102 e6n02 T2-955V t9n10e DL135 l1n06c DL135/D DLD601
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