NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION , transistor specifically designed for VHF RF power amplifiers applications. DRAWING 1.2+/-0.4 0.8+0.10 , solder alloys containing more than85% lead.) RD06HVF1 RD06HVF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 , , RD06HVF1 RD06HVF1 Silicon MOSFET Power Transistor 175MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS , conditions are subject to change. RD06HVF1 RD06HVF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 MITSUBISHI RF ... | Original |
8 pages, |
RD06HVF1-101 MITSUBISHI RF POWER MOS FET 100OHM rf transistor mar 8 MAR 737 transistor d 1557 RD06HVF1 transistor mar 618 MAR 618 transistor RD06HVF1 abstract |
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| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION , transistor specifically designed for HF RF power amplifiers applications. DRAWING 1.2+/-0.4 0.8+0.10 , solder alloys containing more than85% lead.) RD06HHF1 RD06HHF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 , , RD06HHF1 RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE , subject to change. RD06HHF1 RD06HHF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ... | Original |
8 pages, |
491 marking transistor MAR 737 MITSUBISHI RF POWER MOS FET mosfet HF amplifier hf power transistor mosfet MAR 618 transistor mosfet power transistor d 1557 transistor 6w RD06HHF1 RD06HHF1-101 transistor 45 f 123 RD06HHF1 abstract |
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| Abstract: A wideband power amplifier (25 to 110 MHz) with the MOS transistor BLF245 BLF245. 1998 Mar 23 11 , measurements Two tone measurements 6 BALANCED CIRCUIT 7 CONCLUSIONS 8 REFERENCES 1998 Mar , V and IDQ = 0.5 A/transistor. The main properties at PO = 300 W are: Powergain: 22 to 23 dB , at PO = 300 W PEP: -33 dB. 2 INTRODUCTION The BLF177 BLF177 is an RF Power MOS transistor for the HF , powergain over the whole bandwidth. 1998 Mar 23 3 Philips Semiconductors A wideband linear ... | Original |
25 pages, |
transformer turns ratio 321 MAR 618 transistor philips 4b1 ferrite rod soft ferrites philips handbook soft ferrite handbook PHILIPS toroidal core ferroxcube 4C6 toroid core 4C6 toroid philips toroidal transformer vhf linear amplifier NCO8703 philips toroid 4c6 BLF177 NCO8703 BLF177 abstract |
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| Abstract: Date Replacement Part Customer Comments 1 2PA733P 2PA733P PNP general purpose transistor , PNP general purpose transistor 934000080412 T M 3 31-Dec-04 30-Jun-05 BC557B BC557B Inactive part. See Replacement. 3 2PC945P 2PC945P NPN general purpose transistor 934000120116 T M , purpose transistor 934000120126 T M 3 31-Dec-04 30-Jun-05 BC547B BC547B Inactive part. See Replacement. 5 2PC945P 2PC945P NPN general purpose transistor 934000120412 T M 3 ... | Original |
44 pages, |
AS2000T replacement transistor BC337 MFRC17101A/02E SAA7119E/V2/G OF4455 diode triac ot239 OM4368BN ot367 AS2000P of4453 OF4455 philips AS2000P OT239 datasheet abstract |
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| Abstract: BFP67/BFP67R BFP67/BFP67R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has , with 35 mm Cu TELEFUNKEN Semiconductors Rev. A2, 10-Mar-97 1 (11) BFP67/BFP67R BFP67/BFP67R Electrical , 26 dBm TELEFUNKEN Semiconductors Rev. A2, 10-Mar-97 BFP67/BFP67R BFP67/BFP67R Common Emitter , Semiconductors Rev. A2, 10-Mar-97 Â18.5 Â52.3 Â79.4 Â110.7 Â127.9 Â142.8 Â163.0 179.4 169.1 159.1 ... | Original |
11 pages, |
f 1405 zs BFP67R BFP67 "Small Signal Amplifiers" mar 552 BFP67/BFP67R BFP67/BFP67R abstract |
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| Abstract: : sales@murata-ps.com 14 Mar 2011 MDC_UWE Series.A28 Page 1 of 23 UWE Series Wide Input, Isolated , UWE-3.3/20-Q12 3/20-Q12 3.3 20 66 80 125 ±0.25% ±0.25% 12 9-36 160 6.18 87% , Volts www.murata-ps.com email: sales@murata-ps.com 14 Mar 2011 MDC_UWE Series.A28 Page 2 of , : sales@murata-ps.com 14 Mar 2011 MDC_UWE Series.A28 Page 3 of 23 UWE Series Wide Input, Isolated , Current, mA 1 www.murata-ps.com email: sales@murata-ps.com 14 Mar 2011 MDC_UWE Series.A28 ... | Original |
23 pages, |
c10200 15-Q48 C26000 datasheet abstract |
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| Abstract: Switching Transistor · Higher Frequency Operation · Reduced Snubbing · Reduced Parts Count VF = 1.8V , switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count , ) 1.22 (0.05) 6.47 (0.25) 93° 6.18 (0.24) 14.73 (0.58) 5.28 (0.21) 2.61 (0.10) 4.78 , respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1 ... | Original |
7 pages, |
MAR 618 transistor IRFP250 HFA08TA60CS HFA08TA60CS abstract |
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| Abstract: Power Loss in Diode and Switching Transistor · Higher Frequency Operation · Reduced Snubbing · , and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing , ) 1.22 (0.05) 6.47 (0.25) 93° 6.18 (0.24) 14.73 (0.58) 5.28 (0.21) 2.61 (0.10) 4.78 , respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1 ... | Original |
7 pages, |
IRFP250 HFA16TA60CS HFA16TA60CS abstract |
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| Abstract: 4.0A Benefits · Reduced RFI and EMI · Reduced Power Loss in Diode and Switching Transistor · , noise and significantly lower switching losses in both the diode and the switching transistor. These , (0.40) REF. 1.32 (0.05) 15.49 (0.61) 1.22 (0.05) 6.47 (0.25) 93° 6.18 (0.24) 14.73 , trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1 ... | Original |
7 pages, |
IRFP250 HFA30TA60CS PD-20374 PD-20374 abstract |
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| Abstract: Transistor â•- Higher Frequency Operation â•- Reduced Snubbing â•- Reduced Parts Count 1 N/C 3 Anode , noise and significantly lower switching losses in both the diode and the switching transistor. These , ) 93â-' 6.18 (0.24) 14.73 (0.58) 5.28 (0.21) 2.61 (0.10) 4.78 (0.19) 2.32 (0.09) 0.55 , trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1 ... | Original |
5 pages, |
transistor mar 618 SMD-220 HFA08TB120S transistor smd code marking tm MAR 618 transistor PD-20603 PD-20603 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| # GHz S MA R 50 ! 9 Mar 1989 / 10:17:32 !BF959 BF959 BF959 BF959, Si-NPN RF-Transistor in TO-92 ! VCE=10V IC=20mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .060 .49345 -118.4 19.0149 112.7 .01854 68.1 .81665 -9.7 .080 .47536 -132.7 14.9573 105 .1 3.2082 61.8 .10299 42.5 .73721 -18.7 .500 .52401 152.9 2.5213 53.4 .11567 33 www.datasheetarchive.com/files/siemens/ehdata/spar/bf959/st10v20m.s2p |
Siemens | 04/07/1992 | 1.03 Kb | S2P | st10v20m.s2p |
| # GHz S MA R 50 ! 8 Mar 1991 / 11:46:05 !BFQ19S BFQ19S BFQ19S BFQ19S, Si-NPN RF-Transistor in SOT89 ! VCE= 8.00V, IC= 20.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .050 .47810 -73.7 31.9901 136.4 .01985 65.4 .74514 -35.0 .060 .46425 -84.3 29.3634 131 .8 3.5753 70.3 .12641 66.8 .22035 -61.8 .800 .40718 153.5 3.1506 66.2 .14228 65 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq19s/qh8v020m.s2p |
Siemens | 03/07/1992 | 2.01 Kb | S2P | qh8v020m.s2p |
| # GHz S MA R 50 ! 8 Mar 1991 / 11:50:59 !BFQ19S BFQ19S BFQ19S BFQ19S, Si-NPN RF-Transistor in SOT89 ! VCE= 10.00V, IC= 10.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .050 .64394 -52.6 22.6395 146.2 .02323 67.2 .85521 -24.1 .060 .62304 -61.4 21.4495 141 .0 2.2836 58.0 .15445 62.7 .31961 -58.5 1.200 .47747 138.2 1.9327 50.8 .18257 61.8 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq19s/qh10v10m.s2p |
Siemens | 03/07/1992 | 2.01 Kb | S2P | qh10v10m.s2p |
| # GHz S MA R 50 ! 8 Mar 1991 / 11:51:39 !BFQ19S BFQ19S BFQ19S BFQ19S, Si-NPN RF-Transistor in SOT89 ! VCE= 10.00V, IC= 20.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .050 .49196 -71.1 32.0789 136.9 .01974 64.7 .75157 -33.8 .060 .47618 -81.1 29.4996 131 .0 .23103 -61.8 .900 .40828 149.3 2.8561 62.7 .15576 65.2 .23198 -64.7 1.000 .41720 144 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq19s/qh10v20m.s2p |
Siemens | 03/07/1992 | 2.01 Kb | S2P | qh10v20m.s2p |
| # GHz S MA R 50 ! 8 Mar 1991 / 11:49:08 !BFQ19S BFQ19S BFQ19S BFQ19S, Si-NPN RF-Transistor in SOT89 ! VCE= 8.00V, IC= 70.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .050 .34263 -112.1 42.3422 122.4 .01521 66.1 .54641 -49.2 .060 .34409 -121.4 37.2178 117 -59.8 .150 .34835 -159.9 16.7406 98.0 .03384 72.0 .24765 -61.8 .200 .35178 -169 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq19s/qh8v070m.s2p |
Siemens | 03/07/1992 | 2.01 Kb | S2P | qh8v070m.s2p |
| 96 1M x 16 DRAM (3.3 V, 4k- & 1k-Refresh, FPM) Mär 96 1M x 16 DRAM (5 V, 1k-Refresh, FPM) Mär 96 1M 16 DRAM (5 V, 4K-Refresh, FPM) Mär 96 1M x 1 ) Mär 96 2M x 8 DRAM (5 V, 2k-Refresh, EDO) Apr 96 2M x 8 DRAM (5 V, 2k-Refresh, FPM) Mär 96 www.datasheetarchive.com/files/siemens/img/text |
Siemens | 27/02/1997 | 189.62 Kb | text | |
| Q62702-C1137 Q62702-C1137 Q62702-C1137 Q62702-C1137 BC 618 Q62702-C1138 Q62702-C1138 Q62702-C1138 Q62702-C1138 BC 635 www.datasheetarchive.com/files/siemens/img/text-v2 |
Siemens | 28/10/1996 | 558.16 Kb | text-v2 | |
| Line Characteristics (163 Kbytes; 02-Apr-96) AN-110 AN-110 AN-110 AN-110 : Fast IC Power Transistor With Thermal Transistor Pair Sets New Standards for Drift and Noise (224 Kbytes; 04-Nov-95) AN-225 AN-225 AN-225 AN-225 : IC Temperature -749 : Quadrature Signal Interface to a COP400 COP400 COP400 COP400 Microcontroller (180 Kbytes; 08-Mar-96) AN-750 AN-750 AN-750 AN-750 Kbytes; 03-Nov-95) AN-838 AN-838 AN-838 AN-838 : Futurebus-Plus Central Arbiter Implementation Using MAPL (618 Kbytes; 05 www.datasheetarchive.com/files/national/docs/wcd00008/wcd00849.htm |
National | 03/04/1998 | 103.44 Kb | HTM | wcd00849.htm |
| voltage transistors hFE max >40 6 1 0 /catalog/parametrics/14.html Parametrics SA636DK SA636DK SA636DK SA636DK Voltage Low 20 7 1 0 /catalog/parametrics/15.html Parametrics PH2369 PH2369 PH2369 PH2369 Ptot max mW 500 Category Transistors fT min max V 15 Ptot max mW 250 Category Single switching transistors fT min MHz 13 1 0 /catalog Transistors in SC-88 SC-88 SC-88 SC-88 QTR1 = QTR2 NPN .MODEL QTR1 NPN + IS = 1.822E-14 822E-14 822E-14 822E-14 + NF = 0.9932 109 1 0 /models/bc846t_847 0 /models/bc847bpn_3.html Model : BC847BPN BC847BPN BC847BPN BC847BPN 3 BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN BC847BPN Complementary NPN and PNP Transistors www.datasheetarchive.com/files/philips/search/docindex-v2.txt |
Philips | 14/02/2002 | 998.47 Kb | TXT | docindex-v2.txt |
| 1 1 0 /catalog/appnotes/15106.html Applicationnotes for Bipolar power transistors Title Date FS072 FS072 FS072 FS072: Horizontal Deflection for 17 64kHz monitors - BU4522AF/AX BU4522AF/AX BU4522AF/AX BU4522AF/AX 1998-04-14 FS078 FS078 FS078 FS078: Horizontal deflection transistors BUJ100 BUJ100 BUJ100 BUJ100: Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all transistors for 17, 70 kHz monitors 4 1 0 /catalog/appnotes/15613.html Applicationnotes for RF wideband transistors Title Date PAGER: Preamplifier for pager applications 1P9GHZ3: Power Amplifier for 1.9 GHz at 3 V www.datasheetarchive.com/files/philips/search/docindex.txt |
Philips | 25/04/2003 | 954.24 Kb | TXT | docindex.txt |