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LTC4100EG Linear Technology LTC4100 - Smart Battery Charger Controller; Package: SSOP; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
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LTC4100EG#TR Linear Technology LTC4100 - Smart Battery Charger Controller; Package: SSOP; Pins: 24; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
ISL54100ACQZ Intersil Corporation TMDS Regenerators with Multiplexers; MQFP128; Temp Range: 0° to 70° visit Intersil Buy
ISL54100CQZ Intersil Corporation TMDS Regenerators with Multiplexers; MQFP128; Temp Range: 0° to 70° visit Intersil Buy

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Part : MAK 4100 Supplier : Hirschmann Electronics Manufacturer : Newark element14 Stock : 68 Best Price : $2.09 Price Each : $2.26
Part : 930959517 MAK 4100 Supplier : Hirschmann Electronics Manufacturer : TME Electronic Components Stock : 68 Best Price : $1.82 Price Each : $2.34
Part : MAK 4100 GREY Supplier : Belden Wire & Cable Manufacturer : Chip1Stop Stock : 5 Best Price : $5.31 Price Each : $5.31
Part : MAK 4100 Supplier : Hirschmann Electronics Manufacturer : element14 Asia-Pacific Stock : 78 Best Price : $2.96 Price Each : $3.2960
Part : MAK 4100 Supplier : Hirschmann Electronics Manufacturer : Farnell element14 Stock : 242 Best Price : £1.83 Price Each : £2.31
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MAK 4100

Catalog Datasheet MFG & Type PDF Document Tags

EN 13009

Abstract: PE 4100 Hirschmann Automation and Control GmbH MAK 4100 grau/grey Industrial Connectors:Connectors for audio, video and data:Miniature multipole connectors:with locking screw:Straight sockets Product description Type Order No. Type of contact Description Housing Color Number of contacts Conductor size Drawing Technical data LF output "Phone" Rated current Rated voltage Cable diameter Type of , accessories Packaging MAK 4100 grau/grey 930 959-517 female socket with locking screw; solder joint
Hirschmann Electronics
Original
EN 13009 PE 4100 66/UL

mak 3100 s

Abstract: 175117 connection MAK 3100 S MAK 3100 S UM 37 58,6 1 M16x0,75 19 7 58,6 2 1 3 4 37 MAK 4100 MAK 4100 UM 4 Industrial connectors 85 -
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mak 3100 s 175117 connector masei 3100 930 764-517 masei 5100
Abstract: 37 MAK 4100 MAK 4100 UM 4 Industrial connectors 85 Connectors for consumer , 17 9 MAK 30 S MAK 30 S UM 4 7 2 3 4 17 9 37,5 59 1 MAK 40 MAK , MAK 50 5 7 4 2 1 5 37,5 59 3 17 9 MAK 50 S MAK 50 S UM solder connection 59 2 6 7 6 3 76 Industrial connectors 37,5 9 MAK 60 MAK 60 UM 4 , insulated handle, 2 5 solder connection 3 7 9 37,5 59 4 1 6 17 MAK 70 S 8 Hirschmann Electronics
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930 015-517

Abstract: MAS 8100 S 37 MAK 4100 MAK 4100 UM 4 Industrial connectors 85 Connectors for consumer , 2 3 37,5 17 9 MAK 30 S MAK 30 S UM 4 7 2 3 4 17 9 37,5 59 1 MAK 40 MAK 40 UM solder connection 59 1 5 7 insulated handle, 3 4 1 5 37,5 9 17 MAK 50 5 7 4 2 1 5 37,5 59 3 17 9 MAK 50 S MAK 50 S UM solder connection 59 2 6 7 6 3 76 Industrial connectors 37,5 9
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930 015-517 MAS 8100 S 933 175-100 mab5sh mak 60 931 744-200

din 43651

Abstract: HIRSCHMANN CA 6 ls Connectors for consumer electronics MAS/MAK . . . . . . . . . . . . . . . . . . . . . . . 72 ­ 91 MIS/MIK .
Hirschmann Electronics
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din 43651 HIRSCHMANN CA 6 ls putzmeister Hirschmann GO 6, 6 pin connector ef 933 HIRSCHMANN MAWI 50 CH-8610 F-95200 36/36/K/1199 NL-1380 E-28042 H-1131

stereo 3.5mm jack socket

Abstract: 3.5mm mono jack pinout female 5 pin 180° 5 pin 240° 6 pin 7 pin 8 pin Mftrs. List No. MAS 3100 MAS 4100 MAS 5100 S 45 MAS 5100 60 MAS 6100 MAS 7100 S MAS 8100 S (DIN 41524) MAK 3100 S MAK 4100 MAK 5100 S 45 MAK 5100 60 MAK 6100 MAK 8100 S (DIN41524) MAB 3100 S MAB 4100 MAB 5100 S 45 MAB 5100 60 MAB 6100 MAB 7100 S MAB 8100 S Order , Design Engineers - www.element-14.com DIN Type Connectors MAS, MAK and MAWI Mftrs. Standard, Nickel 6 pin , pin MAWI70 SB Free Sockets 5 pin 180° MAK 50 S Connectors DIN Type - Line sockets DIN Type
Element14 Catalog
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stereo 3.5mm jack socket 3.5mm mono jack pinout female hdmi to rca wiring pin out 6.3mm jack PCB Mounted 3.5mm Stereo Socket chassis PCB Mounted 3.5mm Stereo Socket switch
Abstract: #2;=#2;1#2;W/(m·K) RthCH #2; 0,092 Temperatur#2;im#2;Schaltbetrieb , IF #2; 150 #2; A IFRM #2; 300 #2; A I²t #2; 4100 4000 #2; , #2;=#2;1#2;W/(m·K) RthCH #2; 0,15 Temperatur#2;im#2;Schaltbetrieb , #2;=#2;1#2;W/(m·K) RthCH #2; 0,405 Temperatur#2;im#2;Schaltbetrieb , #2;=#2;1#2;W/(m·K) Modulstreuinduktivität Stray#2;inductance#2;module #2; Infineon Technologies
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FD150R12RT4 FD150R

931 765-117

Abstract: mak 3100 s 1 6 37 58,6 5 MAK 8100 SN UM 3 20 13,9 M16x 07,5 7 2 M18x 07,5 3 1 , 4 1,5 MAB 4100 not shielded 20,5 13,5 1 5 Panel-mounted socket 20 13,9
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931 765-117
Abstract: •£çƒ­å™¨çƒ­é˜» Thermal#2;resistance,#2;case#2;to#2;heatsink 每个#2;IGBT#2;/#2;per#2;IGBT λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 0,092 å¨å¼'å³ç¶æ'ä¸'温度 Temperature#2;under#2;switching#2;conditions , IFRM #2; 300 #2; A I²t #2; 4100 4000 #2; 特征å'¼#2;/#2;Characteristic#2;Values min , #2;=#2;1#2;W/(m·K) RthCH #2; 0,15 å¨å¼'å³ç¶æ'ä¸'æ¸©åº , ,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH #2; Infineon Technologies
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DF150R12RT4
Abstract: °C VGE = ±15 V, du/dt = 4100 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 18 â"¦ Tvj = 150°C Eoff , ™¨çƒ­é˜» Thermal#2;resistance,#2;case#2;to#2;heatsink 每个#2;IGBT#2;/#2;per#2;IGBT λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,25 K/W å¨å¼'å³ç¶æ'ä¸'æ¸©åº , •£çƒ­å™¨çƒ­é˜» Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,35 K/W å¨å¼'å³ç¶æ'ä¸'æ¸©åº Infineon Technologies
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FP20R06W1E3
Abstract: IC = 10 A, VCE = 300 V, LS = 60 nH Tvj = 25°C VGE = ±15 V, du/dt = 4100 V/µs (Tvj=150°C) Tvj = , #2;=#2;1#2;W/(m·K) RthCH #2; 1,35 K/W prepared#2;by:#2;DK , •£çƒ­å™¨çƒ­é˜» Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,40 K/W 二极管,整流器#2;/#2;Diode,#2;Rectifier , Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K Infineon Technologies
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FP10R06W1E3 E83335
Abstract: IC = 15 A, VCE = 300 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, du/dt = 4100 V/µs (Tvj=150°C) Tvj = , #2;=#2;1#2;W/(m·K) RthCH #2; 1,30 K/W prepared#2;by:#2;DK , •£çƒ­å™¨çƒ­é˜» Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,40 K/W 二极管,整流器#2;/#2;Diode,#2;Rectifier , Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K Infineon Technologies
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FP15R06W1E3
Abstract: IC = 15 A, VCE = 300 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, du/dt = 4100 V/µs (Tvj=150°C) Tvj = , #2;=#2;1#2;W/(m·K) RthCH #2; 1,30 K/W prepared#2;by:#2;DK , •£çƒ­å™¨çƒ­é˜» Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,40 K/W 二极管,整流器#2;/#2;Diode,#2;Rectifier , Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K Infineon Technologies
Original
Abstract: IC = 20 A, VCE = 300 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, du/dt = 4100 V/µs (Tvj=150°C) Tvj = , #2;=#2;1#2;W/(m·K) RthCH #2; 1,25 K/W prepared#2;by:#2;DK , •£çƒ­å™¨çƒ­é˜» Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,35 K/W 二极管,整流器#2;/#2;Diode,#2;Rectifier , Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K Infineon Technologies
Original
Abstract: IC = 10 A, VCE = 300 V, LS = 60 nH Tvj = 25°C VGE = ±15 V, du/dt = 4100 V/µs (Tvj=150°C) Tvj = , #2;=#2;1#2;W/(m·K) RthCH #2; 1,35 K/W prepared#2;by:#2;DK , 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,40 K/W , Thermal#2;resistance,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K , #2;/#2;per#2;IGBT λPaste#2;=#2;1#2;W/(m·K) RthCH #2; 1,35 K/W prepared#2;by:#2;DK Infineon Technologies
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Abstract: "¦ Tvj = 150°C Eoff 4100 5300 5700 mJ mJ mJ ç­è·¯æ•°æ® SC#2;data VGE ≤ 15 V, VCC = , ,#2;case#2;to#2;heatsink 每个#2;IGBT#2;/#2;per#2;IGBT λPaste#2;=#2;1#2;W/(m·K) RthCH , ,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH Infineon Technologies
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FZ1200R45HL3
Abstract: "¦ Tvj = 150°C Eoff 4100 5300 5700 mJ mJ mJ KurzschluÃverhalten SC#2;data VGE ≤ 15 , Thermal#2;resistance,#2;case#2;to#2;heatsink λPaste#2;=#2;1#2;W/(m·K) RthCH , Thermal#2;resistance,#2;case#2;to#2;heatsink λPaste#2;=#2;1#2;W/(m·K) Tvj op 14,0 K/kW Infineon Technologies
Original
Abstract: "¦ Tvj = 150°C Eoff 4100 5300 5700 mJ mJ mJ ç­è·¯æ•°æ® SC#2;data VGE ≤ 15 V, VCC = , ,#2;case#2;to#2;heatsink 每个#2;IGBT#2;/#2;per#2;IGBT λPaste#2;=#2;1#2;W/(m·K) RthCH , ,#2;case#2;to#2;heatsink 每个二极管#2;/#2;per#2;diode λPaste#2;=#2;1#2;W/(m·K) RthCH Infineon Technologies
Original
Abstract: "¦ Tvj = 150°C Eoff 4100 5300 5700 mJ mJ mJ KurzschluÃverhalten SC#2;data VGE ≤ 15 , Thermal#2;resistance,#2;case#2;to#2;heatsink λPaste#2;=#2;1#2;W/(m·K) RthCH , Thermal#2;resistance,#2;case#2;to#2;heatsink λPaste#2;=#2;1#2;W/(m·K) Tvj op 14,0 K/kW Infineon Technologies
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DTS 423

Abstract: , di/dt = 3300 A/µs (Tvj=125°C) Tvj = 125°C RGon = 1,0 â"¦ Eon #2; 3100 4100 #2; mJ mJ , ,#2;Gehäuse#2;bis#2;Kühlkörper pro#2;IGBT#2;/#2;per#2;IGBT Thermal#2;resistance,#2;case#2;to#2;heatsink λPaste#2;=#2;1#2;W/(m·K) prepared#2;by:#2;MW date#2;of#2;publication:#2;2013-05-28 approved#2;by:#2;DTS revision:#2;3.1 , #2;/#2;per#2;diode Thermal#2;resistance,#2;case#2;to#2;heatsink λPaste#2;=#2;1#2;W/(m·K
Infineon Technologies
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DTS 423 FZ800R45KL3
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