MA3D653 - Datasheet Archive

MA3D653 Silicon planar type (cathode common) Unit : mm For high-frequency rectification 4.6 ± 0.2 9.9 ± 0.3 3.0

Fast Recovery Diodes (FRD) MA3D653 MA3D653 Silicon planar type (cathode common) Unit : mm For high-frequency rectification 4.6 ± 0.2 9.9 ± 0.3 3.0 ± 0.5 I Features 15.0 ± 0.5 · Low forward rise voltage VF · Fast reverse recovery time trr · TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV · Easy-to-mount, caused by its V cut lead end 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.4 ± 0.2 0.8 ± 0.1 1 Symbol Rating VRRM 300 VRSM 300 V Average forward current IF(AV) 5 A Non-repetitive peak forward surge current* IFSM 45 A Junction temperature Tj -40 to +150 °C Storage temperature Tstg -40 to +150 °C 0.55 ± 0.15 2.54 ± 0.3 3 5.08 ± 0.5 V Non-repetitive peak reverse surge voltage 2 Unit Repetitive peak reverse voltage 2.6 ± 0.1 1.6 ± 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter 2.9 ± 0.2 1 : Anode 2 : Cathode 3 : Anode TO-220D Package Internal Connection 1 2 3 Min Typ Max Note) * : Half sine-wave; 10 ms/cycle I Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Unit IRRM1 VRRM = 300 V, TC = 25°C 20 µA IRRM2 Repetitive peak reverse current VRRM = 300 V, Tj = 150°C 2 mA Forward voltage (DC) VF IF = 2.5 A, TC = 25°C Reverse recovery time* trr IF = 1 A, IR = 1 A V 50 ns Rth(j-c) 3 °C/W Rth(j-a) Thermal resistance 0.98 63 °C/W Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg × cm 3. * : trr measuring circuit 50 50 trr IF D.U.T 5.5 IR 0.1 × IR 1 MA3D653 MA3D653 Fast Recovery Diodes (FRD) IF V F 100°C 25°C Ta = 150°C IR Ta 100 1.4 -20°C VR = 300 V 10 Forward voltage VF (V) 1 Forward current IF (A) VF Ta 1.6 10-1 10-2 10-3 1.2 Reverse current IR (µA) 10 1.0 IF = 5 A 0.8 2.5 A 1A 0.6 0.4 100 V 10 V 1 0.1 0.01 10-4 0.2 10-5 0 0.2 0.4 0.6 0.8 1.0 0 -40 1.2 Forward voltage VF (V) 120 160 200 Ta = 150°C 100°C 10-6 10-7 25°C 10-8 10-9 250 200 150 100 50 0 0 50 100 150 200 250 Reverse voltage VR (V) 300 0 50 100 150 200 250 Reverse voltage VR (V) 0.001 -40 0 40 80 120 160 Ambient temperature Ta (°C) Ct VR Terminal capacitance Ct (pF) Reverse current IR (A) 80 300 10-5 2 40 Ambient temperature Ta (°C) IR V R 10-4 10-10 0 300 200