MA2SV04 - Datasheet Archive

 

MA2SV04 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. + 0.05 · Good linearity and large capacitance-ratio in

 

Variable Capacitance Diodes MA2SV04 MA2SV04 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. + 0.05 · Good linearity and large capacitance-ratio in CD VR relation · Small series resistance rD · SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.8 ± 0.1 I Features 0.27 - 0.02 + 0.05 0.27 - 0.02 0.15 min. 1.3 ± 0.1 1.7 ± 0.1 Symbol Rating Unit VR 6 Tj 150 °C Storage temperature Tstg -55 to +150 + 0.05 V Junction temperature °C 0 to 0.1 Reverse voltage (DC) 0.7 ± 0.1 Parameter 0.13 - 0.02 I Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 5 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR Conditions Min VR = 5 V VR = 1 V, f = 1 MHz 10.0 VR = 3 V, f = 1 MHz 5.8 rD VR = 3 V, f = 470 MHz Max Unit 10 CD(1V) CD(3V) Series resistance* Typ nA 11.1 pF 6.4 pF 0.35 Note) 1 Rated input/output frequency: 470 MHz 2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER * 1 MA2SV04 MA2SV04 Variable Capacitance Diodes IF V F 25°C - 40°C 60 40 20 0 30 20 10 5 3 1 0 0.2 0.4 0.6 0.8 1.0 1.2 f = 1 MHz 1.03 VR = 1 V 3V 1.02 1.01 1.00 0.99 0.98 0 20 40 60 80 Ambient temperature Ta (°C) 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) CD Ta 1.04 CD(Ta) CD(Ta = 25°C) VR = 5 V 10 1 0.1 2 Forward voltage VF (V) 2 f = 1 MHz Ta = 25°C Reverse current IR (nA) Ta = 60°C 80 100 50 Diode capacitance CD (pF) Forward current IF (mA) 100 IR Ta CD VR 100 120 100 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C)