2002/95/EC MA2J7290G N-50BU PG-10N SAS-8130 SKH00172AED - Datasheet Archive
Schottky Barrier Diodes (SBD) MA2J7290G Silicon epitaxial planar type For super high speed switching For small current
This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Schottky Barrier Diodes (SBD) MA2J7290G MA2J7290G Silicon epitaxial planar type For super high speed switching For small current rectification Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. Features · Code SMini2-F3 · Pin Name 1: Anode 2: Cathode · Forward current (Average) I F(AV) = 200 mA rectification is possible · High-density mounting is possible Absolute Maximum Ratings Ta = 25°C Parameter Symbol 30 Marking Symbol: 2B Unit VR Reverse voltage Rating V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 200 mA Peak forward current IFM 300 mA Non-repetitive peak forward surge current * IFSM 1 A Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA Reverse current IR VR = 30 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time * trr IF = IR = 100 mA Irr = 0.1 IR, RL = 100 3.0 ns 0.55 V 50 µA Th Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuit Bias Application Unit (N-50BU N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N PG-10N) Rs = 50 Publication date: October 2007 90% tp = 2 µs tr = 0.35 ns = 0.05 Wave Form Analyzer (SAS-8130 SAS-8130) Ri = 50 SKH00172AED SKH00172AED Output Pulse t IF trr t Irr = 0.1 IR IF = 100 mA IR = 100 mA RL = 100 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). MA2J7290G MA2J7290G IF V F IR VR VF Ta 105 103 0.5 100°C 25°C Ta = 150°C 104 -20°C 10 103 100°C 102 0.3 100 mA 0.2 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. 1 IF = 200 mA 0.4 Forward voltage VF (V) Ta = 150°C Reverse current IR (µA) Forward current IF (mA) 102 10-1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 IR T a 40 Terminal capacitance Ct (pF) 104 Reverse current IR (µA) 20 15 V 5V 3 VR = 30 V 102 10 40 80 120 160 200 10 10 15 20 25 Reverse voltage VR (V) SKH00172AED SKH00172AED 80 30 Tj = 150°C 120 160 IF tp 250 T DC 200 150 100 50 0 5 40 IF(AV) Ta 300 20 0 0 10 mA Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C Th Ambient temperature Ta (°C) 2 0 -40 30 30 0 0 25 Ct VR 105 1 -40 15 Reverse voltage VR (V) Forward voltage VF (V) 10 10 0.1 Forward current (Average) IF(AV) (mA) 10-2 25°C 10 0 40 80 120 160 Ambient temperature Ta (°C) 200 ±0.1 ±0.1 1.25 ±0.10 0.50 ±0.05 2 0 to 0.05 1 0.35 ±0.05 5° ±0.1 SMini2-F3 SKH00172AED SKH00172AED ±0.2 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da tie ub f ta i 0.7 on , p nc le or t sh le e. this he ee t as m r5° n s. e e ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct (0.15) fi1.7 lin 0.4 ce eu 2.5 s . p. Th This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). MA2J7290G MA2J7290G Unit: mm 0.13 -0.02 +0.05 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Th (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.