NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| MA22D17 | Panasonic | DIODE SCHOTTKY DIODE 100V 0.3A 2MINI2-F1 |
2 pages, |
Original |  |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Schottky Barrier Diodes (SBD) MA22D17 Silicon epitaxial planar type For high frequency rectification Unit: mm Features 0.80�05 1.6�1 Reverse voltage VR = 100 V is guaranteed High non-repetitive peak forward surge current: IFSM = 20 A 1 2.6�1 3.5�1 0 to 0.1 Absolute Maximum Ratings Ta = 25癈 Unit VR 100 V Repetitive peak reverse voltage VRRM 100 V Forward current (Average) *1 IF(AV) 300 mA Non-repetitive peak forward surge current *2 IFSM 20 ... | Original |
2 pages, |
MA22D17 MA22D17 abstract |
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| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Schottky Barrier Diodes (SBD) MA22D17 Silicon epitaxial planar type For high frequency rectification Unit: mm Features 0.80�05 1.6�1 Reverse voltage VR = 100 V is guaranteed High non-repetitive peak forward surge current: IFSM = 20 A 0 to 0.1 2.6�1 3.5�1 M Di ain sc te on na tin nc ue e/ d 1 Unit VR 100 V Repetitive peak reverse voltage VRRM 100 V Forward current (Average) *1 ... | Original |
2 pages, |
MA22D17 2002/95/EC 2002/95/EC abstract |
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| Abstract: 200 MA3X740 MA3X740 MA3X727 MA3X727 50 MA4X746 MA4X746 200 MA3X788 MA3X788 60 0.65 50 MA22D17 0.57 300 ... | Original |
19 pages, |
DO-34-A2 MA2S101 MA2S1010G MA2SP060G MA36132E MA3DF30 MA3DF40 MA3S132D MA3S132DG MA3S132E varister MAZ8120G MAS3132EG MAS3132E MAS3132DG datasheet abstract |
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| Abstract: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intende ... | Original |
140 pages, |
2PG003 smd code ml6 2pg001 2SD2363 2PG009 datasheet abstract |
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| Abstract: OD503A 2Sb667 2SK3795 2sk3895 2SC5902 equivalent 2SC5929 equivalent 2sk4000 MA3Z147 2sd2603 2sc5928 NPN transistor 2sc6073 2SC6074 TRANSISTOR 2SC5929 2SC5936 equivalent transistor 2SC6073 MN1280 2sc5929 2SC6073 2SC5936 MA22D150G MA22D150G Mini 2P K11 MA2SE010G MA2SE010G SSMini 2P K6 UP05C8GF UP05C8GF SSMini 6P J2 MA22D170G ... | Original |
124 pages, |
PANASONIC TRANSISTOR 2SC6073 datasheet abstract |
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| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Schottky Barrier Diodes (SBD) MA22D170G Silicon epitaxial planar type For high frequency rectification Package Reverse voltage VR = 100 V is guaranteed High non-repetitive peak forward surge current: IFSM = 20 A Code Mini2-F2 Name Pin 1: Anode 2: Cathode Th an W is k y Th e a pro ou Fo an po du fo r f k y log , /EC). MA22D170G Mini2-F2 Unit: mm 1 2 0.13 -0.02 +0.05 Request for your special ... | Original |
3 pages, |
2002/95/EC MA22D170G 2002/95/EC abstract |
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| Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Schottky Barrier Diodes (SBD) MA22D170G Silicon epitaxial planar type For high frequency rectification Package Reverse voltage VR = 100 V is guaranteed High non-repetitive peak forward surge current: IFSM = 20 A Code Mini2-F2 Name Pin 1: Anode 2: Cathode M Di ain sc te on na tin nc ue e/ d Features , mA RL = 100 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). MA22D170G ... | Original |
3 pages, |
2002/95/EC MA22D170G 2002/95/EC abstract |
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| Abstract: MA22D150G MA22D150G Mini 2P K11 MA2SE010G MA2SE010G SSMini 2P K6 UP05C8GF UP05C8GF SSMini 6P J2 MA22D170G ... | Original |
152 pages, |
MIP3E3SMY MIP2E2D MIP4110 MIP414S MIP3E3SMY equivalent MIP289 mip2E2dmy mip291 MIP2E5DMY MIP382 an5891k panasonic inverter dv 700 manual mip2e7dmy MIP2F40MS datasheet abstract |
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| Abstract: MA22D150G MA22D150G Mini 2P K11 MA2SE010G MA2SE010G SSMini 2P K6 UP05C8GF UP05C8GF SSMini 6P J2 MA22D170G ... | Original |
152 pages, |
MIP2E2D MIP2E4DMY MIP289 MIP2F MIP4110 MIP382 MIP2E4D MIP3E3SMY equivalent mip291 MIP3E3SMY mip411 MIP2E7DMY MIP2F3 an5891k mip2f2 datasheet abstract |
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| Abstract: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is in ... | Original |
86 pages, |
DRA4114E Mini6-G4-B DMC26603 DB2W604 MSG36D42 MA3DF50 DSC5001 FM6L5202 DRC3144 MTM68423 DB21320 DZ2S068C db3x DSC3F01 DSK3J02 datasheet abstract |
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