M81722FP M81722FP600V VB-24 125VS500V

M81722FP M81722FP600V IGBT/MOSFET ¡ 600V ¡ ±3Atyp ¡ ¡ ¡8SOP 1. HIN 2. LIN 7. HO 3. GND 6. VS

HVIC M81722FP M81722FP M81722FP600V M81722FP600V IGBT/MOSFET ¡ 600V ¡ ±3Atyp ¡ ¡ ¡8SOP 1. HIN 2. LIN 7. HO 3. GND 6. VS 4. LO PDP/HID ACIGBT/MOSFET 8. VB 5. VCC 8 P 2 S 8 VB 7 HO 6 VS 5 HV LEVEL SHIFT VREG UV DETECT FILTER VCC 4 LO 3 GND Ponr R Q INTER LOCK HIN 1 VREG/VCC LEVEL SHIFT FILTER R S PULSE GEN UV DETECT FILTER LIN 2 VREG/VCC LEVEL SHIFT FILTER DELAY 2009 8 HVIC M81722FP M81722FP Ta = 25 VB VS VBS VHO VCC VLO VIN HIN, LIN Pd Kq Rth(j-c) - Tj 0.5 ~ 624 VB-24 VB-24 ~ VB+0.5 V 0.5 ~ 24 V VS0.5 ~ VB+0.5 V 0.5 ~ 24 V 0.5 ~ VCC+0.5 VBS = VBVS V V 0.5 ~ VCC+0.5 V Ta = 25°C, 0.6 W Ta > 25°C, 4.8 mW/°C 50 °C/W 20 ~ 150* °C Topr 20 ~ 125 °C Tstg 40 ~ 150 °C TL 260 (10s) °C RoHS (Tj)125VS500V 125VS500V VB VS+10 - VS+20 V VS VB > 10V 5 - 500 V VBS VBS = VBVS 10 - 20 V VHO VS - VB V VCC 10 - 20 V VLO 0 - VCC V VIN 0 - 7 V HIN, LIN 0.7 Pd (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Ta (°C) 2009 8 2 HVIC M81722FP M81722FP Ta = 25, VCC = VBS ( = VB-VS) = 15V IFS VB = VS = 600V - - 1.0 µA IBS VBS HIN = LIN = 0V - 0.2 0.5 mA ICC VCC HIN = LIN = 0V - 0.6 1.0 mA VOH H IO = 0A, LO, HO 13.8 14.4 - V VOL L IO = 0A, LO, HO - - 0.1 V VIH H HIN, LIN 4.0 - - V VIL L HIN, LIN - - 0.8 V IIH H VIN = 5V - 17 40 µA IIL L VIN = 0V - - 1 µA VBSuvr VBSUV 8.0 8.9 9.8 V VBSuvh VBSUV 0.3 0.7 - V tVBSuv VBSUV - 7.5 - µs VCCuvr VCCUV 8.0 8.9 9.8 V VCCuvh VCCUV 0.3 0.7 - V tVCCuv VCCUV - 7.5 - µs VPonr tPonr(FIL) IOH H IOL L ROH - - 6.0* V 300* - - ns VO = 0V, VIN = 5V, PWD < 10µs 2.0 3.0 - A VO = 15V, VIN = 0V, PWD < 10µs 2.0 3.0 - A H IO = 200mA, ROH = (VOHVO)/IO - 10 20 ROL L IO = 200mA, ROL = VO/IO - 2.5 3.0 tdLH(HO) HO-VS CL = 1000pF - 200 280 ns tdHL(HO) HO-VS CL = 1000pF - 180 260 ns trH HO-VS CL = 1000pF - 25 45 ns tfH HO-VS CL = 1000pF - 20 35 ns tdLH(LO) LO-GND CL = 1000pF - 200 280 ns tdHL(LO) LO-GND CL = 1000pF - 180 260 ns trL LO-GND CL = 1000pF - 25 45 ns tfL LO-GND CL = 1000pF - 20 35 ns tdLH |tdLH(HO)tdLH(LO)| - 0 30 ns tdHL |tdHL(HO)tdHL(LO)| - 0 30 ns HIN,LIN - 100 - ns HIN,LIN - 100 - ns IN(FIL) 2009 8 3 HVIC M81722FP M81722FP HIN or LIN 50% 50% tr tdLH tdHL 90% HO or LO tf 90% 10% 10% IN LIN VBS UV VCC UV HO LO HL L H H L L LO, HO LOW HL H H H L H LO HIGH LH L H H H L HO HIGH LH H H H H H LO, HO HIGH X L L H L L VBS UV HO LOW X H L H L H VBS UV LO HIGH HL X H L L L VCC UV LO LOW LH X H L L L VCC UV HO, LO LOW 1.VBS UV, VCC UV"L"UV 2.HINLIN"H"HO,LOHIGH 3.X(HIN)LH or HLX(LIN)H or L 4.HOHIN//() HIN HO 2009 8 4 HVIC M81722FP M81722FP 1. HIGH ACTIVEHINLIN"H"LOHOHIGH HIN LIN HO LO 2. UV VCC UV UV UV UV tVccuv VBS UV UV VPonr HIN LIN tVBSuv HO tVccuv LO 2009 8 5 HVIC M81722FP M81722FP UV HO LO UV UVUV"L" UVUV"L" (VCC) UVHIN UVLIN UV UVUVHIN="L" "L"HIN VBSLIN (VBS) 3. Ponr VCC VBSuvt VBS VPonr HIN tVBSuv tPonr (FIL) HO V P o n r L O W t V c c u v tVBSuvtPonr(FIL) 4. VCCVBSVBSVCC V CC V BS HIGH (5:V CC 6:V S ) IC 2009 8 6 HVIC M81722FP M81722FP 5 E NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. *1 F 1 Index mark 4 c A2 A1 *2 D L A HE 8 *3 e bp y Detail F Reference Dimension in Millimeters Symbol Min Nom Max D E A2 A1 A bp c q HE e y L 4.8 4.2 0.05 0.35 0.13 0° 5.9 1.12 0.2 5.0 4.4 1.5 0.4 0.15 6.2 1.27 0.4 5.2 4.6 1.9 0.5 0.2 10° 6.5 1.42 0.1 0.6 2009 8 7 www.MitsubishiElectric.co.jp/semiconductors