NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
M6035P M6045P M6060P 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D M6045P-E3/45 - Datasheet Archive
M6035P, M6045P & M6060P Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES · Guardring for
New Product M6035P M6035P, M6045P M6045P & M6060P M6060P Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES · Guardring for overvoltage protection · Low power losses, high efficiency · Low forward voltage drop 3 2 · High forward surge capability 1 · High frequency operation TO-247AD (TO-3P) · Solder Dip 260 °C, 40 seconds PIN 1 PIN 2 PIN 3 CASE · Component in accordance to RoHS 2002/95/EC 2002/95/EC and WEEE 2002/96/EC 2002/96/EC TYPICAL APPLICATIONS MAJOR RATINGS AND CHARACTERISTICS IF(AV) 2 x 30 A VRRM 35 V, 45 V, 60 V IFSM 350 A VF at IF = 30 A 0.50 V, 0.56 V TJ max. 150 °C For use in low voltage, high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B J-STD-002B and JESD22-B102D JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage M6035P M6035P VRRM 35 M6045P M6045P M6060P M6060P UNIT 45 60 V IF(AV) 60 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 350 A Peak repetitive reverse current at tp = 2 µs, 1 kHz per diode IRRM 2.0 A Voltage rate of change (rated VR) dv/dt 10000 V/µs TJ, TSTG - 65 to + 150 °C Maximum average forward rectified current (see Fig. 1) Operating junction and storage temperature range Document Number: 88980 Revision: 25-May-07 Total device per diode www.vishay.com 1 New Product M6035P M6035P, M6045P M6045P & M6060P M6060P Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Instantaneous forward voltage per diode (1) at IF = 10 A IF = 20 A TJ = 25 °C IF = 30 A at IF = 10 A IF = 20 A TJ = 125 °C IF = 30 A TJ = 25 °C TJ = 125 °C Reverse current per diode (1) at VR Typical junction capacitance at 4.0 V, 1 MHz M6035P M6035P M6045P M6045P TYP. MAX. TYP. MAX. 0.42 0.49 0.54 0.60 0.43 0.52 0.59 0.64 0.31 0.42 0.50 0.55 0.33 0.47 0.56 0.60 IR 135 110 600 160 240 140 600 160 µA mA CJ TEST CONDITIONS 1150 - 1090 - pF SYMBOL M6060P M6060P UNIT V VF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode M6035P M6035P M6045P M6045P RJC M6060P M6060P UNIT 2.0 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE M6045P-E3/45 M6045P-E3/45 6.14 45 30/Tube Tube M6060P-E3/45 M6060P-E3/45 6.14 45 30/Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 70 16 M6035P M6035P & M6045P M6045P D = 0.8 14 60 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 50 40 30 20 D = 0.5 D = 0.3 12 10 D = 1.0 D = 0.2 8 D = 0.1 6 T 4 10 2 0 0 0 25 50 75 100 125 150 175 D = tp/T 0 5 10 15 20 25 tp 30 35 Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 Document Number: 88980 Revision: 25-May-07 New Product M6035P M6035P, M6045P M6045P & M6060P M6060P Vishay General Semiconductor 16 100 M6060P M6060P Average Power Loss (W) 14 Instantaneous Forward Current (A) D = 0.8 D = 0.5 D = 0.3 12 D = 1.0 10 D = 0.2 8 D = 0.1 T 6 4 D = tp/T 2 tp 0 TJ = 150 °C TJ = 125 °C 10 1 TJ = 25 °C M6060P M6060P 0.1 0 5 10 15 20 25 30 35 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average Forward Current (A) Instantaneous Forward Voltage (V) Figure 3. Forward Power Loss Characteristics Per Diode Figure 6. Typical Instantaneous Forward Characteristics Per Diode 1000 Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) 400 TJ = TJ max. 8.3 ms Single Half Sine-Wave 300 200 TJ = 150 °C 100 TJ = 125 °C 10 M6035P M6035P & M6045P M6045P 1 0.1 TJ = 25 °C 0.01 100 1 10 10 100 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Figure 4. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 7. Typical Reverse Characteristics Per Diode 1000 Instantaneous Reverse Current (mA) Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C 10 TJ = 25 °C 1 M6035P M6035P & M6045P M6045P TJ = 150 °C 100 TJ = 125 °C 10 M6060P M6060P 1 0.1 TJ = 25 °C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Instantaneous Forward Characteristics Per Diode Figure 8. Typical Reverse Characteristics Per Diode Document Number: 88980 Revision: 25-May-07 www.vishay.com 3 New Product M6035P M6035P, M6045P M6045P & M6060P M6060P Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 M6035P M6035P & M6045P M6045P M6060P M6060P Junction to Case 1 M6035P M6035P & M6045P M6045P M6060P M6060P 0.1 0.01 100 0.1 1 10 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Figure 9. Typical Junction Capacitance Per Diode Figure 10. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30 0.170 (4.3) 0.840 (21.3) 10 10 TYP. BOTH SIDES 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 1 REF. BOTH SIDES 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.078 REF (1.98) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.225 (5.7) 0.205 (5.2) 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 1 www.vishay.com 4 PIN 2 PIN 3 CASE Document Number: 88980 Revision: 25-May-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1