M471B5673EH1-CF7/CF8/CH9/CK0 K4B1G0846E-HCF7/CF8/CH9/CK0

M471B5673EH1-CF7/CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # :

SERIAL PRESENCE DETECT M471B5673EH1-CF7/CF8/CH9/CK0 M471B5673EH1-CF7/CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component Refresh : 8K/64ms Bin Sort : F7(DDR3 800@CL=6), F8(DDR3 1066@CL=7), H9(DDR3 1333@CL=9), K0(DDR3 1600@CL=11) Function Supported Byte # Hex Value Function Described Note CF7 Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage 0 CF8 CH9 CF7 CF8 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD Byte Use : 176Byte 92h Version 1.0 CH9 10h 1 SPD Revision 2 Key Byte / DRAM Device Type 3 Key Byte / Module Type 4 SDRAM Density and Banks 5 SDRAM Addressing 6 7 8 Module Memory Bus Width 9 Fine Timebase Dividend and Divisor 10 Medium Timebase Dividend 11 Medium Timebase Divisor 12 SDRAM Minimum Cycle Time (tCKmin) 13 Reserved 14 CAS Latencies Supported, Least Significant Byte 15 CAS Latencies Supported, Most Significant Byte 16 Minimum CAS Latency Time(tAAmin) 17 Minimum Write Recovery Time (tWRmin) 18 Minimum RAS# to CAS# Delay Time (tRCDmin) 15ns 19 Minimum Row Active to Row Active Delay Time (tRRDmin) 10ns 20 Minimum Row Precharge Time (tRPmin) 15ns 21 Upper Nibbles for tRAS and tRC 22 Minimum Active to Precharge Time (tRASmin), Least Significant Byte 37.5ns 37.5ns 36ns 2Ch 2Ch 20h 23 Minimum Active to Active/Refresh Time (tRCmin), Least Significatn Byte 52.5ns 50.625ns 49.125ns A4h 95h 89h 24 Minimum Refresh Recovery Time (tRFCmin), Least Significant Byte 110ns 25 Minimum Refresh Recovery Time (tRFCmin), Most Significant Byte 110ns 03h 26 Minimum Internal Write to Read Command Delay Time (tWTRmin) 7.5ns 3Ch 27 Minimum Internal Read to Precharge Command Delay Time (tRTPmin) 7.5ns 3Ch 28 Upper Nibble for tFAW 40ns 37.5ns 30ns 01h 01h 00h 29 Minimum Four Activate WIndow Delay Time (tFAWmin), Least Significant Byte 40ns 37.5ns 30ns 40h 2Ch F0h 30 SDRAM Optional Features 31 SDRAM Thermal and Refresh Options 32 Module Thermal Sensor 33 SDRAM Device Type 34~59 DDR3 SDRAM 0Bh Unbuffered SoDIMM 03h 1Gb 8banks 02h Row : 14, Column : 10 11h Reserved Reserved 00h Module Organization 2Rank / x8 09h Non ECC, 64bit 03h 2.5ps 52h 1/8 (0.125ns) 01h Reserved, General Section 60 Module Nominal Height 61 Module Maximum Thickness 62 Reference Raw Card Used 63 Address Mapping from Edge Connector to DRAM 1/8 (0.125ns) 2.5ns 08h 1.875ns 1.5ns 14h Reserved 6 6, 7, 8 0Ch 00h 6, 7, 8, 9 6 6, 7, 8 13.125ns 13.125ns 04h 6, 7, 8, 9 15ns 1Ch 3Ch 00h 78h 15ns 13.125ns 0Fh 69h 69h 78h 13.125ns 78h 69h 69h 7.5ns 6ns 50h 3Ch 30h 13.125ns 13.125ns 78h 69h 69h - 11h 70h DLL off Mode, RZQ/6, RZQ/7 83h No ODTS, No ASR 01h without TS 00h Standard Monolithic DRAM Device 00h - 00h 30mm 0Fh Planar Double sides 11h R/C F, 2.0 45h standard 00h MAY. 2009 SERIAL PRESENCE DETECT Function Supported Byte # 64~116 Hex Value Function Described Note CF7 Reserved 117 Module ID: Module Manufacturing Location 120 121 CF7 CF8 - Module Manufacturer ID Code, Most Significant Byte 119 CH9 CH9 00h Samsung Module Manufacturer ID Code, Least Significant Byte 118 CF8 80h Samsung CEh Onyang Korea 01h Module ID: Module Manufacturing Date - 00h Module ID: Module Manufacturing Date - 00h - 00h 122~125 Module ID : Module Serial Number 126 Cyclical Redundancy Code - - C5h 5Dh 1Fh 127 Cyclical Redundancy Code - - 77h 2Eh 87h 128 Module Part Number M 4Dh 129 Module Part Number 4 34h 130 Module Part Number 7 37h 131 Module Part Number 1 31h 132 Module Part Number B 42h 133 Module Part Number 5 35h 134 Module Part Number 6 36h 135 Module Part Number 7 37h 136 Module Part Number 3 33h 137 Module Part Number E-die 45h 138 Module Part Number H 48h 139 Module Part Number 1 31h 140 Module Part Number - 2Dh 141 Module Part Number 142 Module Part Number F 143 Module Part Number 7 144 Module Part Number Blank 20h 145 Module Part Number Blank 20h - 00h 146~147 Module Revision Code C 43h F H 46h 46h 48h 8 9 37h 38h 39h 148 SDRAM Manufacturer's JEDEC ID Code Samsung 80h 149 SDRAM Manufacturer's JEDEC ID Code Samsung CEh 150~175 Manufacturer's Specific Data - 00h 176~255 Open for customer use - 00h MAY. 2009