NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| M470T2953CZ0 | Samsung Electronics | DDR2 Unbuffered SODIMM |
20 pages, |
Original |  |
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| M470T2953CZ0-CC | Samsung Electronics | DDR2 Unbuffered SODIMM |
20 pages, |
Original | |
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| M470T2953CZ0-CCC | Samsung Electronics | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64-Bit Non-ECC |
18 pages, |
Original | |
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| M470T2953CZ0-CD5 | Samsung Electronics | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64-Bit Non-ECC |
18 pages, |
Original | |
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| M470T2953CZ0-CD6 | Samsung Electronics | DDR2 Unbuffered SODIMM |
20 pages, |
Original | |
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| M470T2953CZ0-CE6 | Samsung Electronics | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64-Bit Non-ECC |
18 pages, |
Original | |
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| M470T2953CZ0-CE7 | Samsung Electronics | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64-Bit Non-ECC |
18 pages, |
Original | |
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| M470T2953CZ0-CLCC | Samsung Electronics | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64-Bit Non-ECC |
18 pages, |
Original | |
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| M470T2953CZ0-CLD5 | Samsung Electronics | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64-Bit Non-ECC |
18 pages, |
Original | |
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| M470T2953CZ0-CLE6 | Samsung Electronics | DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64-Bit Non-ECC |
18 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: M470T2953CZ3-C M470T2953CZ3-C(L)E7/E6/D5/CC 1GB 128Mx64 64Mx8(K4T51083QC K4T51083QC)*16 2 30mm M470T2953CZ0-C(L)E7/E6/D5 , Module(Populated as 2 ranks of x8 DDR2 SDRAMs) M470T2953CZ3/M470T2953CZ0 10 + 5% CKE1 ODT1 S1 CKE0 , /M470T2953CZ0 : 128Mx64 1GB Module Symbol 800@CL=5 CE7 LE7 667@CL=5 CE6 LE6 533@CL=4 CD5 , M470T2953CZ3 M470T2953CZ3 Units M470T2953CZ0 Input capacitance, CK and CK CCK - 32 - 24 - 48 , 128Mx64 Module(2 Ranks) M470T2953CZ3/M470T2953CZ0 67.60 ± 0.15 mm 3.8 mm max b 11.40 ± 0.15 mm ... | Original |
18 pages, |
K4T51163QC K4T51083QC ddr2 samsung 256MB 512MB 256MB abstract |
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| Abstract: 64Mx64 32Mx16(K4T51163QC-C K4T51163QC-C(L)D6/E6/D5/CC)*8 2 30mm M470T2953CZ0-C(L)D6/E6/D5/CC 1GB , ) M470T2953CZ0 10 + 5% CKE1 ODT1 S1 CKE0 ODT0 S0 DQS0 DQS0 DM0 CS0 O D T 0 C K E 0 DQ0 , ) M470T2953CZ0: 128Mx64 1GB Module Symbol 667@CL=4 CD6 LD6 IDD0 tbd tbd IDD1 tbd tbd , M470T3354CZ0 M470T3354CZ0 Min Max Units M470T2953CZ0 Input capacitance, CK and CK CCK - 32 - , ) M470T2953CZ0 67.60 mm 3.8 mm max 2.00 a 1 b 11.40 30.00 20.00 6.00 4.00 ± 0.10 ... | Original |
20 pages, |
tbd 380 DDR2-667 DDR2-533 DDR2-400 DDR2 SODIMM 256MB 512MB 256MB abstract |
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| Abstract: M470T2953CZ0 M470T2953CZ3 M470T2953CZ3 400/533/ 667 M470T5669AZ0 M470T5669AZ0 No change The Leader in Memory Technology ... | Original |
11 pages, |
M470T6554CZ3 M470T2953 M391T5663AZ3 DDR2 pcb layout BE 22721 M378T6553BZ M378T3354Bz dimm pcb layout 22721 datasheet abstract |
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