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M3D744

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24825 transistor

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES · 300 mW total power dissipation · Very small 1.6 × 1.2 mm ultra thin package · Self alignment during soldering due to straight leads · Replaces two SC-75/SC-89 packaged transistors on same PCB area · Reduced required PCB area · Reduced pick and place costs. APPLICATIONS ·
Philips Semiconductors
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24825 transistor MAM450 SCA73

SMD MARKING E1

Abstract: BAT960 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Schottky barrier diode BAT960 FEATURES PINNING · High current capability PIN DESCRIPTION · Very low forward voltage 1 cathode · Ultra small plastic SMD package 2 cathode · Flat leads: excellent coplanarity and improved thermal behaviour. 3 anode 4 anode 5 cathode 6 cathode
Philips Semiconductors
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SMD MARKING E1 MHC310 SCA74

free Latest transistor data

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMX1 NPN general purpose double transistor Product specification Supersedes data of 2001 Aug 30 2001 Nov 07 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES PEMX1 PINNING · 300 mW total power dissipation PIN · Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 · Excellent coplanarity due to straight leads 2, 5 base TR1; TR2 · Replaces two SC-75/SC
Philips Semiconductors
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free Latest transistor data MAM447

SMD MARKING CODE

Abstract: philips application notes DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Low VF MEGA Schottky barrier diode FEATURES PMEG2010EV PINNING · Forward current: 1 A PIN DESCRIPTION · Reverse voltage: 20 V 1 cathode · Very low forward voltage 2 cathode · Ultra small SMD package 3 anode · Flat leads: excellent coplanarity and improved thermal
Philips Semiconductors
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SMD MARKING CODE philips application notes MHC-310 smd diode marking F1

BAT74V

Abstract: EIAJ C-3 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT74V Schottky barrier double diode Product specification 2002 Sep 02 Philips Semiconductors Product specification Schottky barrier double diode BAT74V FEATURES PINNING · Low forward voltage PIN DESCRIPTION · Low capacitance 1 anode 1 · Ultra small SMD plastic package 2 not connected · Flat leads: excellent coplanarity and improved thermal behaviour. 3 cathode 2 4 anode 2 5 not
Philips Semiconductors
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EIAJ C-3 MAM461
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES PEMT1 PINNING · 300 mW total power dissipation PIN · Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 · Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 · Replaces two SC-75/SC NXP Semiconductors
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PNP TRANSISTOR SOT666

Abstract: MBK120 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB4 PNP resistor-equipped double transistor R1 = 10 k, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 10 k, R2 = open FEATURES PEMB4 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package VCEO collector-emitter voltage -50 V ICM peak collector
Philips Semiconductors
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MBK120 PNP TRANSISTOR SOT666 transistor K 14 MAM452

NXP SMD diode MARKING CODE

Abstract: 01082 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT74V Schottky barrier double diode Product data sheet 2002 Sep 02 NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V FEATURES PINNING · Low forward voltage PIN DESCRIPTION · Low capacitance 1 anode 1 · Ultra small SMD plastic package 2 not connected · Flat leads: excellent coplanarity and improved thermal behaviour. 3 cathode 2 4 anode 2 5 not connected 6
NXP Semiconductors
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NXP SMD diode MARKING CODE 01082

PNP TRANSISTOR SOT666

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES PEMT1 PINNING · 300 mW total power dissipation PIN · Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 · Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 · Replaces two SC-75/SC
Philips Semiconductors
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PNP TRANSISTOR SOT666

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 k, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 k, R2 = open FEATURES PEMB3 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package VCEO collector-emitter voltage -50 V ICM peak collector
Philips Semiconductors
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BV NPN general purpose double transistor Product specification 2001 Sep 10 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BV PINNING · 300 mW total power dissipation PIN · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage 6 5 · Excellent coplanarity due Philips Semiconductors
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BC857BV
Abstract: DISCRETE SEMICONDUCTORS DAT M3D744 PEMX1 NPN general purpose double transistor Product data sheet Supersedes data of 2001 Aug 30 2001 Nov 07 NXP Semiconductors Product data sheet NPN general purpose double transistor FEATURES PEMX1 PINNING â'¢ 300 mW total power dissipation PIN â'¢ Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 â'¢ Excellent coplanarity due to straight leads 2, 5 base TR1; TR2 â'¢ Replaces two SC-75/SC NXP Semiconductors
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Abstract: DISCRETE SEMICONDUCTORS DAT M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Oct 19 2002 Mar 20 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140V QUICK REFERENCE DATA FEATURES â'¢ 300 mW total power dissipation SYMBOL â'¢ Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package PARAMETER MAX. UNIT VCEO V â'1 A peak collector current â'2 A RCEsat â'¢ Self alignment NXP Semiconductors
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PBSS4140V MAM446
Abstract: DISCRETE SEMICONDUCTORS DAT M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES â'¢ High current capability PIN DESCRIPTION â'¢ Very low forward voltage 1 cathode â'¢ Ultra small plastic SMD package 2 cathode â'¢ Flat leads: excellent coplanarity and improved thermal behaviour. 3 anode 4 anode 5 cathode 6 NXP Semiconductors
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH2 NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k FEATURES PEMH2 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 × 1.2 mm ultra thin package VCEO collector-emitter voltage 50 V ICM peak collector current 100 mA TR1 Philips Semiconductors
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MHC049
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH9 NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k Product specification Supersedes data of 2001 Oct 22 2001 Nov 07 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k FEATURES PEMH9 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 × 1.2 mm ultra thin package PARAMETER MAX. UNIT VCEO mA NPN - - NPN - - R1 Philips Semiconductors
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MHC310

Abstract: MHC-310 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES PINNING · High current capability PIN DESCRIPTION · Very low forward voltage 1 cathode · Ultra small plastic SMD package 2 cathode · Flat leads: excellent coplanarity and improved thermal behaviour. 3 anode 4 anode 5
Philips Semiconductors
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ua720 marking code b9 MHC311 SCA75
Abstract: DISCRETE SEMICONDUCTORS DAT M3D744 PMEG1020EV Ultra low VF MEGA Schottky barrier rectifier Product data sheet 2003 Jul 15 NXP Semiconductors Product data sheet Ultra low VF MEGA Schottky barrier rectifier PMEG1020EV PINNING FEATURES â'¢ Forward current: 2 A PIN DESCRIPTION â'¢ Reverse voltage: 10 V 1 cathode â'¢ Ultra low forward voltage 2 cathode â'¢ Ultra small plastic SMD package. 3 anode 4 anode APPLICATIONS 5 cathode â'¢ Low NXP Semiconductors
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free transistor and ic equivalent data

Abstract: PP12 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Preliminary specification 2001 Nov 05 Philips Semiconductors Preliminary specification 40 V low VCEsat NPN transistor PBSS4140V FEATURES QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm x 1.2 mm x 0.55 mm2 ultra thin package VCEO collector-emitter voltage 40 V IC collector current (DC) 1 A ICM peak collector current 2
Philips Semiconductors
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free transistor and ic equivalent data PP12 MLD750 PBSS4140 MAM444

MARKING CODE 67

Abstract: BAS40-07V DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAS40-07V Schottky barrier double diode Product specification 2002 Mar 27 Philips Semiconductors Product specification Schottky barrier double diode BAS40-07V FEATURES PINNING · Low forward voltage PIN DESCRIPTION · Low capacitance 1 anode 1 · Ultra small plastic SMD package 2 not connected · Flat leads: excellent coplanarity and improved thermal behaviour 3 cathode 2 4 anode 2
Philips Semiconductors
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MARKING CODE 67

MHC474

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA · Low collector-emitter saturation voltage VCEsat SYMBOL · High collector current capability IC and ICM VCEO collector-emitter voltage 40 V IC collector current (DC) 2 A · High efficiency leading to
Philips Semiconductors
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MHC474 PBSS5240V

mhc705

Abstract: MHC70 DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMF21 12 V PNP loadswitch Product data sheet 2004 Jan 12 NXP Semiconductors Product data sheet 12 V PNP loadswitch PEMF21 FEATURES QUICK REFERENCE DATA · Low VCEsat transistor and resistor-equipped transistor in one package SYMBOL PARAMETER TYP. MAX. UNIT - -12 V -500 mA 500 m · Very small 1.6 × 1.2 mm ultra thin package TR1; PNP; low VCEsat transistor · Reduced component count. VCEO
NXP Semiconductors
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mhc705 MHC70 102 TRANSISTOR MHC707 R75/01/
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCEsat PNP double transistor Preliminary specification 2001 Sep 27 Philips Semiconductors Preliminary specification 15 V low VCEsat PNP double transistor FEATURES · 300 mW total power dissipation · Very small 1.6 x 1.2 mm ultra thin package · Self alignment during soldering due to straight leads · Low collector-emitter saturation voltage · High current capability · Improved thermal behaviour due to flat leads · Replaces two SC75/SC89 Philips Semiconductors
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PBSS2515VS
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors FEATURES PEMZ7 PINNING · 300 mW total power dissipation PIN · Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 · Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 · Low collector capacitance NXP Semiconductors
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MAM456

PMEG3005AEV

Abstract: PMEG4005AEV DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2005AEV; PMEG3005AEV; PMEG4005AEV Very low VF MEGA Schottky barrier rectifiers Product data sheet 2003 Aug 20 NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV FEATURES QUICK REFERENCE DATA · Very low forward voltage SYMBOL · High surge current IF forward current VR reverse voltage · Ultra small plastic SMD package
NXP Semiconductors
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SC-76 PMEG2005EB PMEG2010EA 05AEA
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB2 PNP resistor-equipped double transistor R1 = 47 k, R2 = 47 k Product specification 2001 Sep 14 Philips Semiconductors Product specification PNP resistor-equipped double transistor R1 = 47 k, R2 = 47 k FEATURES PEMB2 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package VCEO collector-emitter voltage -50 V ICM peak collector current -100 Philips Semiconductors
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MAM451
Abstract: DISCRETE SEMICONDUCTORS DAT M3D744 PEMT1 PNP general purpose double transistor Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES PEMT1 PINNING â'¢ 300 mW total power dissipation PIN â'¢ Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 â'¢ Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 â'¢ Replaces two NXP Semiconductors
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