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M3D354

Catalog Datasheet MFG & Type PDF Document Tags

Power Diodes

Abstract: M3D118 leads M3D354 1998 Dec 07 2 PAGE Philips Semiconductors Power Diodes OUTLINE , ; axial leaded; 2 leads M3D354 SOD64 Hermetically sealed glass package; axial leaded; 2 leads , package; axial leaded; 2 leads M3D354 SOD120 Hermetically sealed glass package; axial leaded; 2
Philips Semiconductors
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M3D308 Power Diodes M3D118 power diode package SOD106A TO220 SMALL heatsink M3D423 M3D116 M3D306 M3D189 M3D236 M3D117 M3D309

za sot353

Abstract: M3D423 sealed glass package; axial leaded; 2 leads 2-6 M3D354 May 1999 1-2 Philips , M3D354 SOD61AD2 Hermetically sealed glass package; axial leaded; 2 leads 2-7 M3D354 , 13 M3D354 SOD88B Hermetically sealed glass package; axial leaded; 2 leads 2 - 14 , SOD119AB Hermetically sealed glass package; axial leaded; 2 leads 2 - 24 M3D354 SOD120
Philips Semiconductors
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M3D452 za sot353 SOD70 package Chapter 8 Philips sot440 SOD-61A M3D176 DO-34 DO-35 DO-41 DO-214AC

power DIODES

Abstract: M3D423 SOD119ABB Hermetically sealed glass package; axial leaded; 2 leads M3D354 1998 Nov 19 3
Philips Semiconductors
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M3D087 M3D302 TO-220F JEDEC M3D333 SOD115 M3D119 M3D184 SSOP20 M3D370 M3D166

PHILIPS BYX132G

Abstract: BYX132G DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX132G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
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PHILIPS BYX132G MBK909 SCA73

Electronic car ignition circuit

Abstract: PHILIPS BYX134G DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX134G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX134G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AC2 is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
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Electronic car ignition circuit PHILIPS BYX134G MBK907

car ignition

Abstract: PHILIPS BYX133GL DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification Supersedes data of 2000 Jan 13 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
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car ignition PHILIPS BYX133GL MAM420

philips 23

Abstract: BP317 DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
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philips 23 BP317

BP317

Abstract: BYX132GL DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of expansion of
Philips Semiconductors
Original

PHILIPS BYX133G

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX133G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
Original
PHILIPS BYX133G

PHILIPS BYX135G

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX135G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX135G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AD2 is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
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PHILIPS BYX135G MBK908

PHILIPS BYX132GL

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification Supersedes data of 2000 Jan 13 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
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PHILIPS BYX132GL

BYX13

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. handbook, k halfpage BYX133GL of expansion of all used parts are matched. The package is designed to be used in an insulating
Philips Semiconductors
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BYX13 SCA60

BP317

Abstract: BYX134G DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX134G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX134G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AC2 is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
Original
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX105G; BYX106G; BYX107G; BYX108G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers BYX105G; BYX106G; BYX107G; BYX108G FEATURES · Glass passivated · High maximum operating temperature · Low leakage current handbook, halfpage k a · Philips Semiconductors
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MSB026

BP317

Abstract: BYX133G DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX133G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
Original

str 6707

Abstract: BP317 DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass
Philips Semiconductors
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str 6707 79905 D-20097
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers BYX101G; BYX102G; BYX103G; BYX104G FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed Philips Semiconductors
Original

BP317

Abstract: BYX132G DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX132G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of
Philips Semiconductors
Original

str 6707

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass
Philips Semiconductors
Original

SOD-61A

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX134G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass
Philips Semiconductors
Original

str 6707

Abstract: SOD-61A DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX135G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass
Philips Semiconductors
Original
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