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M3D102

Catalog Datasheet MFG & Type PDF Document Tags

smd schottky diode marking 72

Abstract: Schottky Diode Marking sc-70 DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION · Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT323 (SC-70) small SMD plastic package. · Low forward voltage · Guard ring protected · Small SMD plastic package. APPLICATIONS 3
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MAM394 smd schottky diode marking 72 Schottky Diode Marking sc-70 SMD CODE PACKAGE SOT323 smd diode A1 smd code marking LP smd diode E1

SMD DIODE bas70

Abstract: MLC359 DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAS70W series Schottky barrier (double) diodes Product specification Supersedes data of October 1994 File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAS70W series PINNING · Low forward voltage BAS70 · High breakdown voltage PIN · Very small SMD package · Low capacitance. W -04W -05W -06W 1 a1 a1 a1
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BAS70-04W BAS70-05W MLC360 MLC359 SMD DIODE bas70 A2 DIODE SMD CODE MARKING MLC358 MBC870 BAS70-06W MLC357

transistor 1BT

Abstract: 1Ft TRANSISTOR DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W; BC848W FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max. 65 V). DESCRIPTION 1 emitter 3 APPLICATIONS base 2 collector ·
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BC856W BC846AW BC846BW BC848AW BC848BW transistor 1BT 1Ft TRANSISTOR 1Ft SOT323 transistor 1Ht BC847CW1GT transistor 1kt BC857W BC858W BC847CW

BF820W

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET e M3D102 BF820W NPN high-voltage transistor Product specification Supersedes data of 1997 Sep 03 2003 Sep 09 Philips Semiconductors Product specification NPN high-voltage transistor BF820W FEATURES PINNING · Low current (max. 50 mA) PIN · High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION · Telephony and professional communication equipment. DESCRIPTION 3 handbook, halfpage
Philips Semiconductors
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MAM062 SCA75

smd diode A4

Abstract: smd diode code A4 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV70W High-speed double diode Product specification Supersedes data of 1996 Sep 17 File under Discrete Semiconductors, SC01 1997 Dec 08 Philips Semiconductors Product specification High-speed double diode BAV70W FEATURES DESCRIPTION · Very small plastic SMD package The BAV70W consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the very
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smd diode A4 smd diode code A4 K450 MAM382 MGA881 MGA882

M3D088

Abstract: M3D302 / SC­74 SOT323 / SC-70 M3D049 M3D088 M3D088 M3D102 M3D302 BAT754 / BAT754A/C/S
Philips Semiconductors
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BAT854W M3D087 PMMT491A PMMT591A PBSS4540Z PBSS5540Z Zener Diode SOD323 Low Noise Zener Diode bipolar zener diodes BZX99-C SC-73 SC-62 SC-74 M3D109
Abstract: DISCRETE SEMICONDUCTORS DAT alfpage M3D102 1PS70SB20 Schottky barrier diode Product data sheet 2001 Mar 16 NXP Semiconductors Product data sheet Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION â'¢ Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT323 (SC-70) small SMD plastic package. â'¢ Low forward voltage â'¢ Guard ring protected â'¢ Small SMD plastic package. APPLICATIONS 3 NXP Semiconductors
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BAW56W

Abstract: smd diod mm Datum 971212 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr. 70-307-11 BAW56W 2x diod switch SOT323 Antal sidor: 08 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAW56W High-speed double diode
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smd diod mm MAM092 MBC871

smd diode marking JC

Abstract: BAL74W DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAL74W High-speed diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diode BAL74W FEATURES DESCRIPTION · Very small plastic SMD package The BAL74W is a high-speed switching diode fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323 package. · High switching speed: max. 4 ns · Continuous
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MAM081 smd diode marking JC marking JC diode 6 PIN smd diode marking JC

TRANSISTOR a4

Abstract: BF824W DISCRETE SEMICONDUCTORS DAT book, halfpage M3D102 BF824W PNP medium frequency transistor Product data sheet Supersedes data of 1997 Jul 07 1999 Apr 15 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824W PINNING FEATURES â'¢ Low current (max. 25 mA) PIN â'¢ Low voltage (max. 30 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION â'¢ RF stages in FM front-ends in common base configuration. 3 handbook, halfpage
NXP Semiconductors
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TRANSISTOR a4 MAM048

BAV99W

Abstract: smd diode a7 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAV99W High-speed double diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed double diode BAV99W FEATURES DESCRIPTION · Very small plastic SMD package The BAV99W consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small
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smd diode a7 MGA889 A7 diode smd MAM094

"MARKING CODE A1"

Abstract: BAW56W DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed double diode BAW56W FEATURES DESCRIPTION · Very small plastic SMD package The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small
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DIODE SMD A6

Abstract: smd diod w 02 Datum 971212 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr. 70-304-30 BAS16W diod SOT323 Antal sidor: 08 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAS16W High-speed diode Product specification
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DIODE SMD A6 smd diod w 02 SMD DIOD MARKING A6 smd diode marking a6 smd diode marking code a6 smd diode a6 MAM095

marking code a6

Abstract: smd diode marking code a6 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAS16W High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 12 Philips Semiconductors Product specification High-speed diode BAS16W FEATURES DESCRIPTION · Very small plastic SMD package The BAS16W is a high-speed switching diode fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323 package. · High switching
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marking code a6 smd diode code a6

BF820W

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W FEATURES PINNING · Low current (max. 50 mA) PIN · High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION · Telephony and professional communication equipment. DESCRIPTION 3 handbook, halfpage
NXP Semiconductors
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PMATA06

Abstract: PMSTA05 DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D102 PMSTA05; PMSTA06 NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 16 1999 Apr 29 NXP Semiconductors Product data sheet NPN general purpose transistors PMSTA05; PMSTA06 FEATURES PINNING · High current (max. 500 mA) PIN · Low voltage (max. 80 V). DESCRIPTION 1 emitter 3 APPLICATIONS base 2 collector · Primarily intended for telephony and
NXP Semiconductors
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PMSTA55 PMSTA56 PMATA06

smd diode code A4

Abstract: DIODE smd marking A4 DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAV70W High-speed double diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed double diode BAV70W FEATURES DESCRIPTION · Very small plastic SMD package The BAV70W consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the very small plastic
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DIODE smd marking A4 MAM093

JTP 00 High-speed double diode

Abstract: BAW56W DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed double diode BAW56W FEATURES DESCRIPTION · Very small plastic SMD package The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small
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JTP 00 High-speed double diode

smd diod mm

Abstract: smd diod Datum 971212 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr. 70-300-83 BAV99W 2x diod switch SOT323 Antal sidor: 08 DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 BAV99W High-speed double diode
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smd diod
Abstract: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D102 PMSTA92 PNP high-voltage transistor Product data sheet Supersedes data of 1999 Jun 01 2001 Feb 20 NXP Semiconductors Product data sheet PNP high-voltage transistor PMSTA92 PINNING FEATURES â'¢ S-mini package PIN â'¢ High voltage. DESCRIPTION 1 emitter 3 APPLICATIONS base 2 collector â'¢ Primarily intended for use in telephony and professional communication equipment. 3 NXP Semiconductors
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BAT854W

Abstract: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D102 BAT854W series Schottky barrier (double) diodes Product data sheet 2001 Feb 27 NXP Semiconductors Product data sheet Schottky barrier (double) diodes FEATURES BAT854W series PINNING â'¢ Very low forward voltage â'¢ Very low reverse current â'¢ Guard ring protected PIN SYMBOL 3 BAT854W 1 1 â'¢ Ultra high-speed switching k Fig.2 1 â'¢ Low power consumption applications (e.g. hand-held applications).
NXP Semiconductors
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BAT854CW BAT854AW BAT854SW

DIODE smd marking A1

Abstract: BAW56W DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAW56W High-speed double diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification High-speed double diode BAW56W FEATURES DESCRIPTION · Very small plastic SMD package The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small plastic SMD
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DIODE smd marking A1

smd diode a7

Abstract: SOT323 A7 DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAV99W High-speed double diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed double diode BAV99W FEATURES DESCRIPTION · Very small plastic SMD package The BAV99W consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small plastic SMD
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SOT323 A7 smd diode code A7

BAS16W

Abstract: DIODE A6 DISCRETE SEMICONDUCTORS DATA SHEET M3D102 BAS16W High-speed diode Product specification Supersedes data of December 1993 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diode BAS16W FEATURES DESCRIPTION · Very small plastic SMD package The BAS16W is a high-speed switching diode fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323 package. · High switching speed: max. 4 ns · Continuous
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DIODE A6
Abstract: DISCRETE SEMICONDUCTORS DAT ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W PINNING FEATURES â'¢ Low current (max. 50 mA) PIN â'¢ High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION â'¢ Telephony and professional communication equipment. DESCRIPTION 3 handbook, halfpage NPN NXP Semiconductors
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