NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| M366F0803BJ2-C60 | Samsung Electronics | 8M x 64 DRAM DIMM Using 8Mx8,4K Refresh, 3.3V |
21 pages, |
Original | |
| M366F0803CJ2-C50 | Samsung Electronics | EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 4K Refresh, 3.3V |
22 pages, |
Original | |
| M366F0803DJ2-C50 | Samsung Electronics | EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 4K Refresh, 3.3V |
22 pages, |
Original | |
| M366F0803DJ2-C60 | Samsung Electronics | EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 4K Refresh, 3.3V |
22 pages, |
Original | |
| M366F0803DJ3-C50 | Samsung Electronics | 8M x 64 DRAM DIMM Using 8Mx8, 4K Refresh, 3.3V |
20 pages, |
Original | |
| M366F0803DJ3-C60 | Samsung Electronics | 8M x 64 DRAM DIMM Using 8Mx8, 4K Refresh, 3.3V |
20 pages, |
Original | |
| M366F0804BT1-C50 | Samsung Electronics | 8M x 64 DRAM DIMM Using 4Mx16, 4K Refresh, 3.3V |
21 pages, |
Original | |
| M366F0804BT1-C60 | Samsung Electronics | 8M x 64 DRAM DIMM Using 4Mx16, 4K Refresh, 3.3V |
21 pages, |
Original | |
| M366F0804CT1-C50 | Samsung Electronics | EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 4K Refresh, 3.3V |
22 pages, |
Original | |
| M366F0804DT1-C50 | Samsung Electronics | EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 4K Refresh, 3.3V |
20 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Identification Part number PKG Ref. M366F0804CT1-C TSOP 4K M366F0884CT1-C M366F0884CT1-C TSOP 8K , DRAM MODULE M366F080(8)4CT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Jan. 1999 , are applied to this module. M366F080(8)4CT1-C DRAM MODULE M366F080(8)4CT1-C M366F080(8 , FEATURES The Samsung M366F080(8)4CT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4CT1-C consists of eight CMOS 4Mx16bits DRAMs in TSOP 400mil packages and one 2K ... | Original |
22 pages, |
M366F080 M366F080 abstract |
| Abstract: Part number PKG Ref. M366F0803CJ2-C SOJ 4K M366F0883CJ2-C M366F0883CJ2-C SOJ CBR ref. 8K , DRAM MODULE M366F080(8)3CJ2-C Unbuffered 8Mx64 DIMM (8Mx8 base) Revision 0.0 Jan. 1999 , are applied to this module. M366F080(8)3CJ2-C DRAM MODULE M366F080(8)3CJ2-C M366F080(8 , FEATURES The Samsung M366F080(8)3CJ2-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)3CJ2-C consists of eight CMOS 8Mx8bits DRAMs in SOJ 400mil packages and one 2K EEPROM ... | Original |
22 pages, |
M366F080 M366F080 abstract |
| Abstract: Part number PKG Ref. M366F0803DJ2-C SOJ 4K M366F0883DJ2-C M366F0883DJ2-C SOJ CBR ref. 8K , DRAM MODULE M366F080(8)3DJ2-C Unbuffered 8Mx64 DIMM (8Mx8 base) Revision 0.0 Dec. 1999 , are applied to this module. M366F080(8)3DJ2-C DRAM MODULE M366F080(8)3DJ2-C M366F080(8 , FEATURES The Samsung M366F080(8)3DJ2-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)3DJ2-C consists of eight CMOS 8Mx8bits DRAMs in SOJ 400mil packages and one 2K EEPROM ... | Original |
22 pages, |
M366F080 M366F080 abstract |
| Abstract: edge connector sockets. · Part Identification Part number PKG Ref. M366F0803BJ2-C SOJ , DRAM MODULE M366F080(8)3BJ2-C Unbuffered 8Mx64 DIMM (8Mx8 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)3BJ2-C M366F080(8)3BJ2-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)3BJ2-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)3BJ2-C consists of eight CMOS ... | Original |
21 pages, |
M366F080 M366F080 abstract |
| Abstract: M366F0804BT1-C TSOP 4K M366F0884BT1-C M366F0884BT1-C TSOP 8K tCAC tRC · Serial Presence Detect with , DRAM MODULE M366F080(8)4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4BT1-C consists of eight CMOS ... | Original |
21 pages, |
M366F080 M366F080 abstract |
| Abstract: DRAM. The M366F080(8)3DJ3-C is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. · Part Identification Part number PKG Ref. M366F0803DJ3-C SOJ , DRAM MODULE M366F080(8)3DJ3-C M366F080(8)3DJ3-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)3DJ3-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)3DJ3-C consists of eight CMOS ... | Original |
20 pages, |
M366F080 M366F080 abstract |
| Abstract: M366F0804DT1-C TSOP 4K M366F0884DT1-C M366F0884DT1-C TSOP 8K ROR Ref. 4K/64ms 4K/64ms 8K/64ms · New , DRAM MODULE M366F080(8)4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of , circuit board for each DRAM. The M366F080(8)4DT1-C is a Dual In-line Memory Module and is intended for ... | Original |
20 pages, |
K4E641612D-T M366F080 M366F080 abstract |