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Part : AM27512-25DC Supplier : Advanced Micro Devices Manufacturer : Bristol Electronics Stock : 18 Best Price : $3.36 Price Each : $6.72
Part : AM27512DC Supplier : Advanced Micro Devices Manufacturer : Bristol Electronics Stock : 5 Best Price : - Price Each : -
Part : M27512-2F1 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 10 Best Price : - Price Each : -
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M27512 Datasheet

Part Manufacturer Description PDF Type
M27512 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512 STMicroelectronics NND - NMOS 512 KBIT (64KB X8) UV EPROM Original
M27512-20F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512-20F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original
M27512-20F6 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512-20F6 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original
M27512-25F1 SGS-Thomson 512K UV Erasable EPROM Original
M27512-25F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512-25F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original
M27512-25F6 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512-25F6 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original
M27512-2F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512-2F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original
M27512-2F6 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512-2F6 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original
M27512-30F1 SGS-Thomson 512K UV Erasable EPROM Original
M27512-30F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Scan
M27512-3F1 SGS-Thomson 512K UV Erasable EPROM Original
M27512-3F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original
M27512-3F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original
Showing first 20 results.

M27512

Catalog Datasheet MFG & Type PDF Document Tags

M27512 eprom

Abstract: ) of the parallel M27512 may be common. A TTL low level pulse applied to a M27512'sE input, with GVP P at_12.5V, will program that M27512. A high level E input inhibits the other M27512s from being pro , M27512. To activate this mode, the pro gramming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling address , 5 7 . SGS-THOMSON LI M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TI M E : 200ns
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OCR Scan
M27512 eprom

M27512

Abstract: ' ÏÏIB S E lâ S S 86 â  7^5^537 005737*4 M27512-2F1 M27512F1 M27512-3F1 M 27512-25F1 M27512-30F1 /M 2 7 5 1 2 F 6 T ^ 1? ^ M27512 S G S -TH 0MS 0N ORDERING INFORMATION P a , a M27512's CE input, with OE/VP P at_12.5V, will program that M27512. A high level CE input , ERASABLE PROM P R E LIM IN A R Y DATA â  FAST ACCESS TIME: 200ns MAX M27512-2F1 â  0 TO +70°C , M27512. When delivered, and after each erasure, all bits of the M27512 are in the "1 â' state. Data is
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OCR Scan
IP-28 DIP-28 28-PIN P058-I/2

27512-3

Abstract: m27512 M27512 ORDERING INFORMATION Part Number M27512-2F1 M27512F1 M27512-3F1 M27512-20F1 M27512-25F1 M27512-30F1 M27512-2F6 M27512F6 Access Time 200 ns 250 ns 300 ns 200 ns 250 ns 300 ns 200 ns 250 ns Supply Voltage 5V , to a M27512's CE input, with OE/Vpp at 12.5V, will program that M27512. A high level CE input , : exceeding 14V on pin 22 (OE/Vpp) will permanently damage the M27512. When delivered, and after each erasure , functional in the 25 °C ± 5 °C ambient temperature range that is required when programming the M27512. To
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OCR Scan
27512-3 EPROM 27512 A0-A15 AO-A15 DIP28

M27512

Abstract: 1N914 M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other , ambient temperature range that is required when programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may , M27512 NMOS 512 Kbit (64Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 200ns s , SIGNATURE s PROGRAMMING VOLTAGE: 12V 28 1 DESCRIPTION The M27512 is a 524,288 bit UV
STMicroelectronics
Original
1N914 VA10 FDIP28W AI00765B
Abstract: (Over Specified Operating Conditions) Parameter M27512-20 Min Max M27512-25 M27512-35 , Standard Pinout. JEDEC Approved Software Carrier Capability Fast Access Time â'" M27512-20 200 ns â'" M27512-25 250 ns â'" M27512-35 350 ns Low Power â'" 150 mA max. Active â'" 40 mA max , : Exceeding 14.0V on pin 22 (OE/Vpp) will permanently damage the M27512. Programming of multiple M27512s , combination of the M27512â'™s high density, cost effective EPRO M storage, and new advanced microproces -
OCR Scan
M80186 M8051

M27512F1

Abstract: M27512 NUMBERS: M27512F1 M27512-3F1 M27512-25F1 M27512-30F1 PIN CONNECTIONS A15 V I 28 ] vcc A12 2 27 ] A 14 , common. A TTL low level pulse applied to a M27512's CE input, with OE/VPP at 12.5V, will program that M27512. A high level CE input inhibits the other M27512s from being programmed. PROGRAM VERIFY A verify , damage the M27512. When delivered, and after each erasure, all bits of the M27512 are in the "1" state , when programming the M27512. To activate thi mode, the programming equipment must fore 11.5V to 12.5V
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OCR Scan
AM27512 1200C 30F1

M27512

Abstract: 1N914 pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E , functional in the 25 °C ± 5 °C ambient temperature range that is required when programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. , M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE , DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is
STMicroelectronics
Original
Abstract: pulse applied to a M27512â'™s E input, with GVpp at 12.5V, will program that M27512. A high level E , ambient temperature range that is required when program­ ming the M27512. To activate this mode, the pro­ gramming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier , rZ 7 SGSâ'™THOMSON * 7 i, M27512 RfflD®[i]®ilLi©TO®iD(gS NMOS 512K (64K x 8) UV EPROM ,   ELECTRONIC SIGNATURE â  PROGRAMMING VOLTAGE: 12V DESCRIPTION Figure 1. Logic Diagram The M27512 is -
OCR Scan
7T2T237
Abstract: may be common. A TTL low level pulse applied to a M27512's E input, with GVP P at_12.5V, will program that M27512. A high level E input inhibits the other M27512s from being pro grammed. Program Verify A , program ming the M27512. To activate this mode, the pro gramming equipment must force 11,5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by , ^ 7 S G S -T H O M S O N IM Ê IM S iÊ ïM iQ g S M27512 NMOS 512K (64K x 8) UV EPROM -
OCR Scan
VA00765B

1N914

Abstract: AS10 [ZJ SCS-THOMSON M27512 NMOS 512K (64K x 8) UV EPROM â  FAST ACCESS TIME: 200ns â  EXTENDED , : 12V FDIP28W (F) DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic , 16 A0-A15 , operations of the M27512 are listed in the Operating Modes table. A single 5V power supply is required in
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OCR Scan
AS10 A10HEH-

M27512

Abstract: M27512 NMOS 512K (64K x 8) UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED , (F) DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic , programming procedure. Logic Diagram VCC 16 8 A0-A15 E Q0-Q7 M27512 GVPP VSS AI00765B B27512/503 Complete data available on DATA-on-DISC CD-ROM or at www.st.com 1/2 M27512
STMicroelectronics
Original
AI00766

FDIP28Wf

Abstract: m27512 M27512 NMOS 512K (64K x 8) UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE , The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line , Diagram VCC 16 A0-A15 8 Q0-Q7 E GVPP M27512 VSS AI00765B B27512/503 Complete data available on DATA-on-DISC CD-ROM or at www.st.com 1/2 M27512 DIP Pin Connections Signal Names
STMicroelectronics
Original
FDIP28Wf
Abstract: be comm on. A TTL low level pulse applied to a M27512's E input, with GVP at_12.5V, P will program that M27512. A high level E input in h ib its th e o th e r M 27 5 1 2 s from be in g p ro ­ grammed , range that is required when program ­ ming the M27512. To activate this mode, the pro­ gram m ing , r Z J SCS-THOMSON ^ 7 #® HD©Å"i[L[l©ï®(ô)Kf)Q©S M27512 NMOS 512K (64K x 8) UV EPROM , M27512 Table 2. Absolute Maxim um Ratings Sym bol Param eter Value Unit Am bient -
OCR Scan
IP28W

M27512

Abstract: 1N914 common. A TTL low level pulse appliedto a M27512'sE input, with GVpp at 12.5V, will program that M27512. , the M27512. To activate this mode, the programming equipmentmust force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512 Kbit (64Kb x 8) UV EPROM NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns EXTENDED , DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is
STMicroelectronics
Original

27512

Abstract: eprom 27512 ram 512k x 16 bits , will program that M27512. A high level E input in h ib its th e o th e r M 2 7 5 1 2 s from be in g p , in the 25 °C ± 5 °C ambient temperature range that is required when program ming the M27512. To , * 7# ® H D© ^ © iLi(gî® © M O(êi f Z 7 S G S -T H O M S O N M27512 NMOS 512K (64K x , G V p p - < VS S VA0C765 March 1992 237 M27512 Table 2. Absolute Maximum Ratings , w 2 8 ] VCC 27 ] A14 26 25 ] A13 ] A8 2 4 ] A9 2 3 ] A11 M27512 22 21 20 19 18 17 16 15 V A
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OCR Scan
27512 eprom 27512 ram 512k x 16 bits

M27512

Abstract: 1N914 common. A TTL low level pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other M27512s from being programmed. Program Verify A verify , programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512 Kbit (64Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 200ns s
STMicroelectronics
Original

M27512

Abstract: 1N914 M27512 may be common. A TTL low level pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other M27512s from being programmed. Program , programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE
STMicroelectronics
Original

M27512

Abstract: 1N914 M27512 may be common. A TTL low level pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other M27512s from being programmed. Program , programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE
STMicroelectronics
Original
Abstract: 8 5 'C DIP28 M27512-2F1 M27512F1 M27512-3F1 Supply Voltage 200 ns PACKAG E M , 12.5V, will program that M27512. A high level CE input inhibits the other M27512s from being , anently dam age the M27512. W hen delivered, and after each erasure, all bits of the M27512 are in the , in the 25 â'˜ C ± 5 "C am bient tem perature range that is required when programm ing the M27512. , schem e is also innovative in SGSTHO M SON M27512. Conventional sensing com ­ pares the addressed cell -
OCR Scan
0-A15 27512-20F1 27512-30F1 27512-2F6 27512F6

FDIP28W

Abstract: M27512A M27512 512 Kbit (64Kb x 8) NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED , (F) DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic , GVPP M27512 Data Outputs E Q0-Q7 Ground VSS AI00765B B27512/804 Complete data available on DATA-on-DISC CD-ROM or at www.st.com 1/2 M27512 DIP Pin Connections Ordering
STMicroelectronics
Original
M27512A
Showing first 20 results.