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M1 transistor

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Abstract: voltage output of 1.2 V ±2%. Power MOS FET M1 : In the S-8437/8438 S-8437/8438 Series, the switching transistor , characteristics of the M1 transistor (700 mA max.). In the S-8437/8438 S-8437/8438 Series, 39 to 820 µH of inductance is , specified as a high value. However, the DC resistance loss in L and the M1 transistor becomes small because , 1. S-8437AF S-8437AF 2. S-8438AF S-8438AF -VOUT CONT CONT VIN VIN M1 M1 R1 Control circuit , /8438 Series n Operation The S-8437/8438 S-8437/8438 Series consists of a power MOS FET (M1) and a CR oscillation ... Original
datasheet

17 pages,
185.62 Kb

variable coil S-8438AF-ZB-X s-8438 M1 transistor cc 471k DINS4 S-8437/8438 S-8437/8438 abstract
datasheet frame
Abstract: 1.2 V ± 2%. Power MOS FET M1 : In the S-8437/8438 S-8437/8438 Series, the switching transistor consists of a , transistor must be four times of Iqut- Ipk is limited due to the characteristics of the M1 transistor (700 mA , resistance loss In L and the M1 transistor becomes small because of the reduced Ipk, and the efficiency is , phone and portable telephone Block Diagrams 1. S-8437AF S-8437AF v|n ON/OFF CONT ZT" -VouT -o- M1 T , Figure 1 CONT T M1 Ï Control circuit Oscillation circuit a -X^ZL Vss Reference voltage circuit ... OCR Scan
datasheet

16 pages,
846.26 Kb

zt sot-89 S-8437 S-8437AF S-8438AF S-8438AF-ZB-X SOT-89-5 PACKAGE S-8437AF-ZA-X Denki 8438 os M1 transistor DINS4 S-8437/8438 S-8437/8438 abstract
datasheet frame
Abstract: voltage output of 1.2 V ±2%. Power MOS FET M1 : In the S-8437/8438 S-8437/8438 Series, the switching transistor , flowing in the transistor must be four times of IOUT. IPK is limited due to the characteristics of the M1 , value. However, the DC resistance loss in L and the M1 transistor becomes small because of the reduced , S-8437AF S-8437AF 2. S-8438AF S-8438AF -VOUT CONT CONT VIN VIN M1 M1 R1 Control circuit , S-8437/8438 S-8437/8438 Series Operation The S-8437/8438 S-8437/8438 Series consists of a power MOS FET (M1) and a CR ... Original
datasheet

16 pages,
112.97 Kb

S-8438AF-ZB-X M1 transistor S-8437 S-8437AF S-8437AF-ZA-X S-8438 S-8438AF Denki cc 471k 13003 TRANSISTOR equivalent "Inverting Switching Regulators" 13003 transistor power supply circuits 8437 diode S-8437/8438 S-8437/8438 S-8437/8438 abstract
datasheet frame
Abstract: characteristics of the M1 transistor (700 mA max.). OD In the S-8437/8438 S-8437/8438 Series, 39 to 820 µH of inductance , M1 transistor becomes small because of the reduced IPK, and the efficiency is improved overall. As , Applications OD n Features 2. S-8438AF S-8438AF CONT VIN M1 M1 R1 Control circuit Control , Series consists of a power MOS FET (M1) and a CR oscillation circuit. M1 is turned on and off by the CR oscillation circuit. When M1 is on (tON), energy is accumulated in the inductor (L). When M1 is off (tOFF ... Original
datasheet

17 pages,
235.47 Kb

uC 8438 S-8437 S-8437AF S-8437AF-ZA-X S-8438AF S-8438AF-ZB-X S-8438 M1 transistor cc 471k 8437 diode D1NS4 diode DINS4 datasheet abstract
datasheet frame
Abstract: limited due to the characteristics of the M1 transistor (700 mA max.). 820 |xH ofinductance isrecommended. , loss in L As indicated in the and the M1 transistor becomes small because of the reduced lPK, and , Series_ Operation The S-8437/8438 S-8437/8438 Series consists of a power MOS FET (M1) and a oscillation circuit. When M1 is on transferred to the - V 0 ut ( t 0 N), CR oscillation circuit. M1 is turned on and off by the ( Î off) , CR energy is accumulated in the inductor (L). When M1 is off through the ... OCR Scan
datasheet

16 pages,
384.28 Kb

S-8437/8438 S-8437/8438 abstract
datasheet frame
Abstract: consists of the switching transistor (M1), the CR oscillation circuit, and the Schottky diode. The CR , frequency). Switching transistor (M1) : A large-capacity Nch MOS transistor. Use an inductor whose , M1 transistor (500 mA max.). PR In the S-8430AF S-8430AF, recommended inductance is between 30 and 270 , voltage must be specified as a high value. However, the DC resistance loss in L and the M1 transistor , of switching transistor (M1) 18.1 Rising time (tON) -Ambient temperature (Ta) 18.2 (Typ. ... Original
datasheet

25 pages,
279.65 Kb

S-8430AF S-807 NLC453232 FL5H470K 1S1588 diode 1S1588 equivalent datasheet abstract
datasheet frame
Abstract: Oscillating frequency). Switching transistor (M1) : A large-capacity Nch MOS transistor. Use an inductor , specified as a high value. However, the DC resistance loss in L and the M1 transistor becomes small because , IOUT (mA) 18. Rising/falling time of switching transistor (M1) 18.1 Rising time (tON) -Ambient , Diagram VSW CONT VIN M2 M1 + - CR oscillation circuit * + - VOUT Ref. , current of switching transistor Input voltage for ON/OFF, SEL1, and SEL2 pins VOUT Ta ISW ISWQ ... Original
datasheet

23 pages,
177.38 Kb

shindengen regulator S-8430AF S-807 NLC453232 1S1588 diode 1S1588 equivalent datasheet abstract
datasheet frame
Abstract: consists of the switching transistor (M1), the CR oscillation circuit, and the Schottky diode. The CR , transistor (M1) : Schottky diode : VSW voltage : This diode has almost the same performance as the 1S1588 1S1588 , limited due to the characteristics of the M1 transistor (500 mA max.). In the S-8430AF S-8430AF, recommended , and the M1 transistor becomes small because of the reduced IPK, and the efficiency is improved , (mA) 18. Rising/falling time of switching transistor (M1) 18.1 Rising time (tON) -Ambient ... Original
datasheet

24 pages,
308.67 Kb

S-8430AF S-8430AF abstract
datasheet frame
Abstract: diagram of the switching regulator. The switching regulator consists of the switching transistor (M1), the , Switching transistor (M1) :A large-capacity Nch MOS transistor. Use an inductor whose peak current ( I p k , M1 transistor (500 mA max.). In the S-8430AF S-8430AF, recommended inductance is between 30 and 270 /M. Using , must be specified as a high value. However, the DC resistance loss in L and the M1 transistor becomes , : D1NS4, Ta = 25°C Io ut (m A) Io u t (m A) 18. Rising/falling time of switching transistor (M1 ... OCR Scan
datasheet

22 pages,
561.13 Kb

diode 1S1588 equivalent S-8430AF S-8430AF abstract
datasheet frame
Abstract: consists of the switching transistor (M1), the CR oscillation circuit, and the Schottky diode. The CR , Characteristics 14. Oscillating frequency). Switching transistor (M1) : A large-capacity Nch MOS transistor. Use , the characteristics of the M1 transistor (500 mA max.). In the S-8430AF S-8430AF, recommended inductance is , Rising/falling time of switching transistor (M1) 18.1 Rising time (toN) -Ambient temperature (Ta) Hyp. , Switching current Isw VDS = 0.2 V, SEL2 = H - 250 - mA - Leakage current of switching transistor '$WQ Vos ... OCR Scan
datasheet

23 pages,
1297.6 Kb

S-8430AF S-807 NLC453232 1S1588 S-8430AF abstract
datasheet frame

Datasheet Content (non pdf)

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www.datasheetarchive.com/download/37711817-903302ZC/bldc.ppt
Texas Instruments 11/09/1998 962.5 Kb PPT bldc.ppt
transistor drive current density. Figure 9: M1 electromigration performance vs. , which is half that of the previous 0.35 um technology [9]. Although transistor drive current is about support aggressive metal aspect ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current density quality and thickness uniformity of the shunt layer has been found to be key to M1 line electromigration
www.datasheetarchive.com/files/intel/technologies/itj/q31998/articles/art_2e-v1.htm
support enhancement of transistor drive current density. Figure 9: M1 0.35 um technology [9]. Although transistor drive current is about the same as in the previous metal aspect ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current density increases thickness uniformity of the shunt layer has been found to be key to M1 line electromigration resistance.
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_2e-v2-vx2.htm
Intel 04/05/1999 7.16 Kb HTM art_2e-v2-vx2.htm
support enhancement of transistor drive current density. Figure 9: M1 0.35 um technology [9]. Although transistor drive current is about the same as in the previous metal aspect ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current density increases thickness uniformity of the shunt layer has been found to be key to M1 line electromigration resistance.
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_2e-v2.htm
Intel 02/02/1999 7.16 Kb HTM art_2e-v2.htm
support enhancement of transistor drive current density. Figure 9: M1 0.35 um technology [9]. Although transistor drive current is about the same as in the previous metal aspect ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current density increases thickness uniformity of the shunt layer has been found to be key to M1 line electromigration resistance.
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_2e-v1.htm
Intel 02/02/1999 7.16 Kb HTM art_2e-v1.htm
support enhancement of transistor drive current density. Figure 9: M1 0.35 um technology [9]. Although transistor drive current is about the same as in the previous metal aspect ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current density increases thickness uniformity of the shunt layer has been found to be key to M1 line electromigration resistance.
www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_2e.htm
Intel 31/10/1998 7.16 Kb HTM art_2e.htm
- NPN general purpose transistor BC847BF BC847BF BC847BF BC847BF - NPN general purpose transistors BC847BPN BC847BPN BC847BPN BC847BPN - NPN/PNP general purpose transistor BC847W BC847W BC847W BC847W - NPN general purpose transistors (sat) NPN transistor PBSS5140T PBSS5140T PBSS5140T PBSS5140T - 40 V low V_CE(sat) PNP transistor PCA8581CT/F6 PCA8581CT/F6 PCA8581CT/F6 PCA8581CT/F6 PDTA114EEF PDTA114EEF PDTA114EEF PDTA114EEF - PNP resistor-equipped transistor PDTA114EU PDTA114EU PDTA114EU PDTA114EU - PNP resistor-equipped transistor PDTA144EE PDTA144EE PDTA144EE PDTA144EE - PNP resistor-equipped transistor PDTC124XE PDTC124XE PDTC124XE PDTC124XE - NPN resistor-equipped transistor
www.datasheetarchive.com/files/philips/catalog/listing/41026-v1.html
Philips 17/02/2002 45.13 Kb HTML 41026-v1.html
double diodes 2PC4617RJ 2PC4617RJ 2PC4617RJ 2PC4617RJ - NPN general purpose transistor BAV70T BAV70T BAV70T BAV70T - High-speed purpose transistor BC847W BC847W BC847W BC847W - NPN general purpose transistors BF485PN BF485PN BF485PN BF485PN - NPN/PNP high voltage transistors BF547 BF547 BF547 BF547 - NPN 1 GHz wideband transistor BF547W BF547W BF547W BF547W - NPN 1 GHz wideband transistor BFC505 BFC505 BFC505 BFC505 - NPN wideband cascode transistor BFC520 BFC520 BFC520 BFC520 - NPN wideband cascode transistor BFE505 BFE505 BFE505 BFE505 - NPN wideband differential transistor BFE520 BFE520 BFE520 BFE520 - NPN
www.datasheetarchive.com/files/philips/catalog/listing/27119-v1.html
Philips 17/02/2002 152.26 Kb HTML 27119-v1.html
/A Transistor count (Number) 181 Process (Name) HF2CMOS 2mm Process qualification (Date) Q4/96 Q4/96 Q4/96 Q4/96 Layers(M1,M2,poly1,poly2,etc.) (Nature/Width) Nature Thickness Width Pitch M1: AlSiCu 0.6mm 1.8V Die name (Part number) P1872AAH P1872AAH P1872AAH P1872AAH Die size (mm * mm) 1560*1460 Shrink (Level) N/A Transistor dimension(Nature/Width) 2mm (Metal - Metal) Composite defect density (Defects per cm2 0.17 Layers(M1,M2,poly1,poly2,etc.) (Nature/Width) Nature Thickness Width Pitch M1: AlSiCu 0.6mm 2mm
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7558.htm
STMicroelectronics 31/01/2001 9.89 Kb HTM 7558.htm
Shrink (Level) N/A Transistor count (Number) 181 Process (Name) HF2CMOS 2mm Process qualification (Defects per cm2 0.17 Layers(M1,M2,poly1,poly2,etc.) (Nature/Width) Nature Thickness Width Pitch M1 ) 1.56*1.46 Shrink (Level) N/A Transistor count (Number) 362 Process (Name) HF2CMOS 2mm Process density (Defects per cm2 0.17 Layers(M1,M2,poly1,poly2,etc.) (Nature/Width) Nature Thickness Width Pitch M1: AlSiCu 0.6mm 2mm 4.5mm M2: AlSiCu 1.05mm 2mm 4.5mm Poly1
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7557.htm
STMicroelectronics 31/01/2001 9.95 Kb HTM 7557.htm