NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 1.2 V ± 2%. Power MOS FET M1 : In the S-8437/8438 S-8437/8438 Series, the switching transistor consists of a , transistor must be four times of Iqut- Ipk is limited due to the characteristics of the M1 transistor (700 mA , resistance loss In L and the M1 transistor becomes small because of the reduced Ipk, and the efficiency is , phone and portable telephone Block Diagrams 1. S-8437AF S-8437AF v|n ON/OFF CONT ZT" -VouT -o- M1 T , Figure 1 CONT T M1 Ï Control circuit Oscillation circuit a -X^ZL Vss Reference voltage circuit ... | OCR Scan |
16 pages, |
zt sot-89 S-8437 S-8437AF S-8438AF S-8438AF-ZB-X SOT-89-5 PACKAGE S-8437AF-ZA-X Denki 8438 os M1 transistor DINS4 datasheet abstract |
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| Abstract: characteristics of the M1 transistor (700 mA max.). OD In the S-8437/8438 S-8437/8438 Series, 39 to 820 uH of inductance , M1 transistor becomes small because of the reduced IPK, and the efficiency is improved overall. As , Applications OD n Features 2. S-8438AF S-8438AF CONT VIN M1 M1 R1 Control circuit Control , Series consists of a power MOS FET (M1) and a CR oscillation circuit. M1 is turned on and off by the CR oscillation circuit. When M1 is on (tON), energy is accumulated in the inductor (L). When M1 is off (tOFF ... | Original |
17 pages, |
S-8438AF-ZB-X M1 transistor S-8437 S-8437AF S-8437AF-ZA-X S-8438AF S-8438 cc 471k 8437 diode D1NS4 diode DINS4 datasheet abstract |
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| Abstract: voltage output of 1.2 V ±2%. Power MOS FET M1 : In the S-8437/8438 S-8437/8438 Series, the switching transistor , flowing in the transistor must be four times of IOUT. IPK is limited due to the characteristics of the M1 , value. However, the DC resistance loss in L and the M1 transistor becomes small because of the reduced , S-8437AF S-8437AF 2. S-8438AF S-8438AF -VOUT CONT CONT VIN VIN M1 M1 R1 Control circuit , S-8437/8438 S-8437/8438 Series Operation The S-8437/8438 S-8437/8438 Series consists of a power MOS FET (M1) and a CR ... | Original |
16 pages, |
S-8438AF-ZB-X S-8437 S-8437AF S-8437AF-ZA-X S-8438 S-8438AF Denki cc 471k 13003 TRANSISTOR equivalent "Inverting Switching Regulators" 13003 transistor power supply circuits 8437 diode S-8437/8438 S-8437/8438 abstract |
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| Abstract: voltage output of 1.2 V ±2%. Power MOS FET M1 : In the S-8437/8438 S-8437/8438 Series, the switching transistor , characteristics of the M1 transistor (700 mA max.). In the S-8437/8438 S-8437/8438 Series, 39 to 820 uH of inductance is , specified as a high value. However, the DC resistance loss in L and the M1 transistor becomes small because , 1. S-8437AF S-8437AF 2. S-8438AF S-8438AF -VOUT CONT CONT VIN VIN M1 M1 R1 Control circuit , /8438 Series n Operation The S-8437/8438 S-8437/8438 Series consists of a power MOS FET (M1) and a CR oscillation ... | Original |
17 pages, |
s-8438 cc 471k DINS4 S-8437/8438 S-8437/8438 abstract |
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| Abstract: consists of the switching transistor (M1), the CR oscillation circuit, and the Schottky diode. The CR , frequency). Switching transistor (M1) : A large-capacity Nch MOS transistor. Use an inductor whose , M1 transistor (500 mA max.). PR In the S-8430AF S-8430AF, recommended inductance is between 30 and 270 , voltage must be specified as a high value. However, the DC resistance loss in L and the M1 transistor , of switching transistor (M1) 18.1 Rising time (tON) -Ambient temperature (Ta) 18.2 (Typ. ... | Original |
25 pages, |
S-8430AF S-807 NLC453232 1S1588 diode 1S1588 equivalent datasheet abstract |
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| Abstract: Oscillating frequency). Switching transistor (M1) : A large-capacity Nch MOS transistor. Use an inductor , specified as a high value. However, the DC resistance loss in L and the M1 transistor becomes small because , IOUT (mA) 18. Rising/falling time of switching transistor (M1) 18.1 Rising time (tON) -Ambient , Diagram VSW CONT VIN M2 M1 + - CR oscillation circuit * + - VOUT Ref. , current of switching transistor Input voltage for ON/OFF, SEL1, and SEL2 pins VOUT Ta ISW ISWQ ... | Original |
23 pages, |
shindengen regulator S-8430AF S-807 NLC453232 1S1588 diode 1S1588 equivalent datasheet abstract |
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| Abstract: consists of the switching transistor (M1), the CR oscillation circuit, and the Schottky diode. The CR , Characteristics 14. Oscillating frequency). Switching transistor (M1) : A large-capacity Nch MOS transistor. Use , the characteristics of the M1 transistor (500 mA max.). In the S-8430AF S-8430AF, recommended inductance is , Rising/falling time of switching transistor (M1) 18.1 Rising time (toN) -Ambient temperature (Ta) Hyp. , Switching current Isw VDS = 0.2 V, SEL2 = H - 250 - mA - Leakage current of switching transistor '$WQ Vos ... | OCR Scan |
23 pages, |
S-8430AF S-807 NLC453232 1S1588 datasheet abstract |
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| Abstract: the M1 transistor must be five times of Iout- Ipk is limited due to the characteristics of the M1 , value. However, the DC resistance loss in L and the M1 transistor becomes small because of the reduced , an external transistor to boost the available output current. These series are suitable for use as , : 0.2 ^A max. - Shutdown function • Large output currents can be obtained with an external transistor , connection terminal EXT:External transistor connection terminal 2 Vss GND terminal 3 ON/OFF Shutdown ... | OCR Scan |
42 pages, |
WKX 54 S-8436 S-8435 Marcon series CACFM1A220M 41178 8436 8436xf 2SC3279 marcon capacitor Marcon CE series Marcon CACFM 1A220M CACFM datasheet abstract |
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| Abstract: VBAT* GNDM 3 VBATL8 VBATL pins 9 VBATL6 The M1 transistor is only present in the 11 VBATL7 VBATL8 circuit. VBAT3 VBAT1 M1 VBATL* GNDM 4 LDO8O LDO output ... | Original |
11 pages, |
LV5103LP LD08 LD02 LD01 ENA0585 ENA0585 abstract |
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| Abstract: converter. 3.6. Enhanced Transformer BOM Though the recommended M1 transistor is a "logiclevel" FET, the , any of the discrete transistor designs to implement high-voltage ringing if there are no , Front End Driver Maximum VBAT Si321x Inductor Discrete Transistor 94.5 V Si321x Inductor Si3201 94.5 V Si321x Enhanced Transformer Discrete Transistor 150 V Si321xM Si321xM Transformer Discrete Transistor 150 V for VDD > 4.0 V 94.5 V for VDD < 4.0 V Si321xM Si321xM Transformer ... | Original |
12 pages, |
AN45 IR31 ir76 AN193 R53 SOT223 2N5551 SOT23 Si3201 Si3210 Si321x 2N5401 SOT-23 R5B transistor diode i321 transistor 945 AN193 abstract |
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| M4 is maintained closed all the 60 sector, with M1 driven by the pulsed signal. Ton means the amount of time (during one PWM period) during which the upper M1 transistor drives current. Toff is when the M1 switch drives no current. Toff is equal to the PWM period minus Ton. As symmetrical PWM is chosen time (during one PWM period) during which the upper M1 transistor drives current. Toff is when the M1 ;Active switches M1 and M4 SPLK #0F3Dh, ACTR Period Shunt Voltage Drop Period Hard Chopping Mode: This www.datasheetarchive.com/download/37711817-903302ZC/bldc.ppt |
Texas Instruments | 11/09/1998 | 962.5 Kb | PPT | bldc.ppt |
| PBSS3515M_1 Product information page PBSS3515M PBSS3515M PBSS3515M PBSS3515M; 15 V, 0.5 A PNP low VCEsat (BISS) transistor General info Low V CEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN , 0.5 A PNP low VCEsat (BISS) transistor 22-7-2003 Product Specification 9.0 67 Breakthrough in Small-Signal; Low VCEsat (BISS) transistors (2003-04-10) SOT88x package platform (2003 www.datasheetarchive.com/files/philips/pip/pbss3515m_1.html |
Philips | 15/06/2005 | 5.27 Kb | HTML | pbss3515m_1.html |
| PBSS2540M_1 Product information page PBSS2540M PBSS2540M PBSS2540M PBSS2540M; 40 V, 0.5 A NPN low VCEsat (BISS) transistor General info Low V CEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP , 0.5 A NPN low VCEsat (BISS) transistor 22-7-2003 Product Specification 9.0 68 -Signal; Low VCEsat (BISS) transistors (2003-04-10) SOT88x package platform (2003-08-01) NEW MULTIMARKET www.datasheetarchive.com/files/philips/pip/pbss2540m_1.html |
Philips | 15/06/2005 | 5.19 Kb | HTML | pbss2540m_1.html |
| PBSS3540M_1 Product information page PBSS3540M PBSS3540M PBSS3540M PBSS3540M; 40 V, 0.5 A PNP low VCEsat (BISS) transistor General info Low V CEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN low VCEsat (BISS) transistor 12-8-2003 Product Specification 9.0 70 -Signal; Low VCEsat (BISS) transistors (2003-04-10) SOT88x package platform (2003-08-01) NEW MULTIMARKET www.datasheetarchive.com/files/philips/pip/pbss3540m_1.html |
Philips | 15/06/2005 | 5.01 Kb | HTML | pbss3540m_1.html |
| PBSS3515M PBSS3515M PBSS3515M PBSS3515M - 15 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3515M_1 SOT883 1 PBSS3515M_1 false www.datasheetarchive.com/download/92820543-612994ZC/products.zip (P:\481.Concise Catalog CD-ROMs\catalog\products\43966.txt) |
Philips | 01/06/2005 | 1234.32 Kb | ZIP | products.zip |
| Applicationnotes for General purpose transistors Title Date AI_BFG425W BFG425W BFG425W BFG425W_21W_2400M_1: 2.4 GHz power amplifier with the BFG425W BFG425W BFG425W BFG425W and the BFG21W BFG21W BFG21W BFG21W 2000-02-02 1890MHZ 1890MHZ 1890MHZ 1890MHZ: 1890MHz low power down converter with 110MHz IF 1P9GHZ3 amplifier for 900MHz at 6V AI_BFG480W BFG480W BFG480W BFG480W_2450M_1: 2.45 GHz www.datasheetarchive.com/files/philips/catalog/appnotes/41766.html |
Philips | 25/04/2003 | 2.53 Kb | HTML | 41766.html |
| optimized to support aggressive metal aspect ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current quality and thickness uniformity of the shunt layer has been found to be key to M1 line . M1 electromigration structures with different metal width and length were designed in the SRAM . Figure 9 shows M1 electromigration performance vs. line width. It is clear that minimum metal lines www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_2e.htm |
Intel | 31/10/1998 | 7.16 Kb | HTM | art_2e.htm |
| optimized to support aggressive metal aspect ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current quality and thickness uniformity of the shunt layer has been found to be key to M1 line . M1 electromigration structures with different metal width and length were designed in the SRAM . Figure 9 shows M1 electromigration performance vs. line width. It is clear that minimum metal lines www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_2e-v1.htm |
Intel | 02/02/1999 | 7.16 Kb | HTM | art_2e-v1.htm |
| ratios. However, the M1 line (used for local interconnect) thickness was decreased from 0.60 um to 0.48 um for narrow pitch planarity improvement. M1 current density increases significantly as compared the shunt layer has been found to be key to M1 line electromigration resistance. In addition, the characterization of the electromigration of narrow and short metal lines. M1 electromigration structures with density stresses were used in the characterization. Figure 9 shows M1 electromigration performance vs www.datasheetarchive.com/files/intel/technologies/itj/q31998/articles/art_2e-v1.htm |
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| Applicationnotes for Double low power transistors Title Date AI_BFG425W BFG425W BFG425W BFG425W_21W_2400M_1: 2.4 GHz power amplifier with the BFG425W BFG425W BFG425W BFG425W and the BFG21W BFG21W BFG21W BFG21W 2000-02-02 www.datasheetarchive.com/files/philips/catalog/appnotes/41767.html |
Philips | 25/04/2003 | 1.19 Kb | HTML | 41767.html |