NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Formosa MS Silicon Rectifier 1N4001 1N4001 THRU 1N4007 List , /02/10 Revised Date - A 6 Formosa MS Silicon Rectifier 1N4001 1N4001 THRU 1N4007 Pinning , Formosa MS Silicon Rectifier 1N4001 1N4001 THRU 1N4007 BULK PACKING DEVICE Q'TY 1 INNER CARTON , A Page. 6 Formosa MS Silicon Rectifier 1N4001 1N4001 THRU 1N4007 High reliability test , Issued Date DS-222111 DS-222111 2008/02/10 Revised Date - Revision A Page. 6 Formosa MS ... | Original |
6 pages, |
silicon diode 1N4001 specifications free download diode 1n4001 data sheet features of DIODE 1N4001 diode cross reference 1N4007 1N4001 general diode purpose 1N4007 formosa diode DIODE 1N4002 Diode Datasheet 1N4007 diode cross reference 1N4002 diode rectifier 1n4001 diode 1N4007 specifications 1N4001 1N4007 1N4001 abstract |
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| Abstract: 1N4001 1N4001 .1N4007 PLASTIC SILICON RECTIFIERS FEATURES * Low forward voltage * High current capability * Low leakage current * High surge capability * Low cost DO-41 DO-41 L, 25.4 MIN 4.1 25.4 MIN , 1N4006 1N4006 1N4007 UNITS Maximum Recurrent Peak Reverse Voltage* 50 100 200 400 600 800 1000 V Maximum RMS , ms single half sine-wave 50 A Maximum Forward Voltage at 1 .OA AC and 25 °C 1.0 V , IN 01 .375 CTIVE 9.5n LOAD m LEAI 1 LENG rH 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, »C Fig. ... | OCR Scan |
2 pages, |
1N4007 1n4001 ph 1N40011 1N4002 1N4003 1N4004 1N4005 1N4005 ph 1N4006 1N4001 1N4001-1N4007 DO-41 1N4001 abstract |
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| Abstract: BL GALAXY ELECTRICAL 1N4001 1N4001 - 1N4007 VOLT AGE RANGE: 50 - 1000 V CURRENT : 1.0 A PLAST , olvents The plas tic m aterial carries U/L recognition 94V-0 MECHANICAL DATA Cas e:JEDEC DO-41 DO-41,m , denotes cathode Weight: 0.012ounces ,0.34 gram s Mounting pos ition: Any M AXIM UM RAT INGS AND ELECT , voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V R MS , ) 15 R JA (Note1) - 55 - + 150 N OTE: 1. M easured at 1.0M Hz and applied rev erse ... | Original |
2 pages, |
1N4007 1N4001/1N4007 BL 1N4001 1N4007 SM 1N 4007 bl tic 41 1N4007 BL 1N4007 galaxy datasheet abstract |
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| Abstract: SIGNAL output · Segment Output: P-channel open drain · 40 DIP package MS-011AC ABSOLUTE MAXIMUM , 0.5 5.0 1500 1800 - 30 600 60 V mA uA uA uA uA uA uA % M VDD=6V (VDD-VSS=3.0 , , DS2, RES, HS, MS and BLK for T1, T2, T3 and AC PIN CONFIGURATION BLK 40 1 DS1 DS2 bc4 , b1 T1 c1 MS HS RES CLK CLOUT AC VSS VDD T3 T2 20 21 OI OO 40-DIP 40-DIP MS-011AC Rev. 02 IN7100 IN7100 Block Diagram Rev. 02 IN7100 IN7100 Block Diagram (for die) Rev. 02 ... | Original |
8 pages, |
1N4007 1N4731A 4194.304 5566-05A block diagram of 7 segment DIP-40 IN4007 IN7100 1N4732A IN4737A SVC-01MS01 MS-011AC IN7100 abstract |
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| Abstract: of 100 ms and a duty cycle of 10% in a non-ventilated enclosed adapter measured at +50 °C (see Key , 1N4007 C6 100 uF 10 V VR1 BZX55C5V1 BZX55C5V1 1 2 3 +5 V R5 5.1 k 1/8 W -5 V, 50 mA , nF 250 VAC D1 1N4007 D2 1N4007 D3 1N4007 D4 1N4007 R13 475 k 0.5 W C5 15 uF 450 V PH1 R1 PH2 10 1 W R2 10 1 W PH3 N 10 1 W R5 1k D5 1N4007 D6 1N4007 D7 1N4007 D8 1N4007 12 V, 250 mA C3 100 uF 16 V 1 10 T1 RTN Q1 ... | Original |
6 pages, |
LNK604 LNK623PG LNK626 lnk625 top268vg LNK563 LNK564 lnk306 tny 604 LNK632 TNY278PN lnk605 LNK 605 TNY276 TOP266EG datasheet abstract |
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| Abstract: 1N4001 1N4001 thru 1N4007 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and , forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A , Document Number 88503 28-Apr-05 V www.vishay.com 1 1N4001 1N4001 thru 1N4007 Vishay Semiconductors , Current (A) Average Forward Rectified Current (A) 1.0 175 TA = 75 °C 8.3 ms Single Half , Non-repetitive Peak Forward Surge Current Document Number 88503 28-Apr-05 1N4001 1N4001 thru 1N4007 Vishay ... | Original |
3 pages, |
J-STD-002B DO-204AL Diodes 1n 4004 1N4007 VISHAY 88503 1N4007 vishay 1N4007 1N4001 diode 1N 4002 1N4001 abstract |
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| Abstract: R5* 3.6 M J2 D3 1N4007 NC T1 C7 is configurable to adjust U1 current limit, see , fitted) · Active mode efficiency >75% (CEC 2008, 72.4%) · BP/M pin capacitor value selects MOSFET , open loop fault causes an overvoltage on the output, VR2 will conduct. When the current into the BP/M , C5 2.2 nF 250 VAC VR1 P6KE150A P6KE150A D1 1N4007 J1 85-265 VAC D2 1N4007 F1 3.15 A R2 , 1N4007 8 C10 1000 F 25 V 6 3 +12 V, 1 A J3 C11 100 F J4 25 V R7 4 20 RTN ... | Original |
2 pages, |
EN550022 DI-91 BZX79-C11 BYV28-200 advantages of 1N4007 1N5255B 1N4007GP PC817A 1N4007 tny278p TNY279 pin TNY278 application TNY279 TNY278PN HIGH POWER DI-91 abstract |
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| Abstract: mH *R5 and R8 are optional components T1 D5 1N4007GP 1N4007GP R5* 3.6 M J2 D3 1N4007 , 15 0 0 250 500 Time (ms) Figure 3. BP/M Pin OVP Function Shuts Down Power Supply. , fitted) Active mode efficiency >75% (CEC standard: 71%) BP/M pin capacitor value selects MOSFET current , open loop fault causes an overvoltage on the output, VR2 will conduct. When the current into the BP/M , winding. C5 2.2 nF 250 VAC VR1 P6KE150A P6KE150A J1 85-265 VAC F1 3.15 A D1 1N4007 D2 1N4007 ... | Original |
2 pages, |
P6KE150A EN550022 DI-91 BZX79-C11 BYV28-200 advantages of 1N4007 1N5255B 1N4007GP PC817A PI-4244-021406 1N4007 tny279 led TL431 current limit tny278p DI-91 abstract |
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| Abstract: SIGNAL output · Segment Output: P-channel open drain · 40 DIP package MS-011AC · Improved Power on , Max 7.0 0.5 5.0 1500 1800 - 30 600 60 Unit V mA uA uA uA uA uA uA % M , other than bc4, ad2, 1Hz for segment bc4, ad2, 1Hz and CLOUT for CLOUT for DS1, DS2, RES, HS, MS and , a1 d1 b1 T1 c1 MS CLK HS RES CLOUT AC VSS OI 20 21 OO 40-DIP 40-DIP MS-011AC 2 IN7200 IN7200 Block Diagram 3 IN7200 IN7200 Block Diagram (for die) 4 IN7200 IN7200 ... | Original |
7 pages, |
RH70 1N4007 1N4731A 1N4732A block diagram of 7 segment DIGITAL CLOCK IC DIP-40 in4737 IN7200 IN4007 in4007 pin configuration IN4007 DATASHEET 18 pin 7 segment display ic IN4737A IN7200 abstract |
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| Abstract: B li A f I IT c 1N4001 1N4001 THRU 1N4007 1.0 AMP SILICON RECTIFIERS FEATURES * The plastic package , : Molded plastic * Polarity: Color band denotes cathode end * Lead: Plated axial lead, solderable per M , SYMBOLS 1N4001 1N4001 1N4002 1N4002 1N4003 1N4003 1N4004 1N4004 1N4005 1N4005 1N4006 1N4006 1N4007 UNITS Maximum Recurrent Peak Reverse Voltage , )lead length at TA«75°C l(AV) 1.0 A Peak Forward Surge Current 8.3 ms single half sine wave , ;ÌUA[ I IT RA TINGS AND CHARACTERISTIC CUR VES 1N4001 1N4001 THRU 1N4007 FIG. 2 - TYPICAL FORWARO ... | OCR Scan |
2 pages, |
MX25 ln4001 IN4007 1N4007 1N4004 1N4003 1N4002 1N4001 1N4001 abstract |
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| W P1 100k W 8 C4 0.15 m F C3 100 m F 35V R1 3.3k W D1 1N4007 C2 1000 m F 35V C1 0.1 m F V (26V) S R .8nF 6 1 C8 22 m F 35V 7 1 C9 3.3nF 8 1 C10 560pF 9 1 C12 470 m F 50V 10 1 D1 1N4007 11 1 IC1 TDA1175P TDA1175P TDA1175P TDA1175P 1.5ms 1.8 A I 10 Pin 10 Current + 20 mA P tot Power Dissipation : at T tab = 90 5 C at T amb = 70 5 = 1A PP 0.7 ms 2 V ON Peak to Peak Output Noise Pin 11 Connected to GND 18 30 mVpp 2 f o Free Running Power Amplifier Input Voltage + 10 - 0.5 V V I o Output Peak Current (non repetitive) at t = 2ms 2 A I o www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1840-v1.htm |
STMicroelectronics | 02/04/1999 | 9.68 Kb | HTM | 1840-v1.htm |
| W P1 100k W 8 C4 0.15 m F C3 100 m F 35V R1 3.3k W D1 1N4007 C2 1000 m F 35V C1 0.1 m F V (26V) S R .8nF 6 1 C8 22 m F 35V 7 1 C9 3.3nF 8 1 C10 560pF 9 1 C12 470 m F 50V 10 1 D1 1N4007 11 1 IC1 TDA1175P TDA1175P TDA1175P TDA1175P 1.5ms 1.8 A I 10 Pin 10 Current + 20 mA P tot Power Dissipation : at T tab = 90 5 C at T amb = 70 5 = 1A PP 0.7 ms 2 V ON Peak to Peak Output Noise Pin 11 Connected to GND 18 30 mVpp 2 f o Free Running Power Amplifier Input Voltage + 10 - 0.5 V V I o Output Peak Current (non repetitive) at t = 2ms 2 A I o www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1840-v2.htm |
STMicroelectronics | 14/06/1999 | 9.64 Kb | HTM | 1840-v2.htm |
| .15 m F C3 100 m F 35V R1 3.3k W D1 1N4007 C2 1000 m F 35V C1 0.1 m F V (26V) S 1 C12 470 m F 50V 10 1 D1 1N4007 11 1 IC1 TDA1175P TDA1175P TDA1175P TDA1175P 12 1 P1 100k W POT 13 1 P2 220k W for f = 50Hz, t fly 3 1.5ms 1.8 A I 10 Pin 10 Current + 20 mA P tot Power Dissipation : at .7 ms 2 V ON Peak to Peak Output Noise Pin 11 Connected to GND 18 30 mVpp 2 f o Free Running Amplifier Input Voltage + 10 - 0.5 V V I o Output Peak Current (non repetitive) at t = 2ms 2 A I o www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1840.htm |
STMicroelectronics | 20/10/2000 | 12.51 Kb | HTM | 1840.htm |
| C4 0.15 m F C3 100 m F 35V R1 3.3k W D1 1N4007 C2 1000 m F 35V 10 1 D1 1N4007 11 1 IC1 TDA1175P TDA1175P TDA1175P TDA1175P 12 1 P1 100k W POT 13 1 P2 220k W POT 14 1 P3 Peak Flyback Current for f = 50Hz, t fly 3 1.5ms 1.8 A I 10 Pin 10 Current + 20 m Input Voltage + 10 - 0.5 V V I o Output Peak Current (non repetitive) at t = 2ms 2 A I o Output Peak Current at f = 50Hz, t 3 10 m s 2.5 A I o Output Peak Current at f = 50Hz, t www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1840-v3.htm |
STMicroelectronics | 25/05/2000 | 11.46 Kb | HTM | 1840-v3.htm |
| .9k C4 100nF R1 10k C3 10nF D1 1N4007 C2 22uF 400V L1 470uH D3 BYT01 BYT01 BYT01 BYT01 4 100nF R1 10k C3 10nF D1 1N4007 C1 22uF 400V L1 470uH D3 BYT01-400V BYT01-400V BYT01-400V BYT01-400V C the part number 1N4007. The energy stored in the bulk capacitor during the conduction time of the F R2 56k C3 2.2nF D1 1N4007 C2 22uF 400V L1 470uH D3 BYT01-400V BYT01-400V BYT01-400V BYT01-400V C5 33u DRAIN VDD - + U1 VIPer20 R3 3.9k C4 100nF 10k R2 C3 10nF D1 1N4007 C1 22 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7520.htm |
STMicroelectronics | 19/01/2001 | 32.28 Kb | HTM | 7520.htm |
| option 7 5 4 NTC NTC 110 V or 220V G 1 N 4007 R1 1M W 1 % 8 3 2 1 A immunity against disturbances. DESCRIPTION 1 2 3 4 V M M o d e V G 8 7 6 5 V DD V .5 V I I / I O I / O current -40 +40 mA Tstg Storage Temperature -60 +150 5C Toper TSM Non repetitive surge peak on-state current ( T j initial = 255 C ) t = 8.3ms t = 10ms 105 100 A I 2 t I 2 t value t = 10ms 50 A 2 s dI / dt Critical rate of rise of on www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3740-v3.htm |
STMicroelectronics | 30/01/2001 | 10.05 Kb | HTM | 3740-v3.htm |
| 5/8 option 7 5 4 NTC NTC 110 V or 220V G 1 N 4007 R1 1M 1 % 8 3 2 1 AVS10 AVS10 AVS10 AVS10 33 mF 16V A 1 A 2 AVS10CB AVS10CB AVS10CB AVS10CB supply : I G = 100mA - di/dt = 1A / m s * For either polarity of electrode A 2 voltage with reference to O I / O voltage V SS - 0.5 0.5 V I I / I O I / O current - 40 + 40 mA T stg Storage Temperature - 60 5 C I TSM Non repetitive surge peak on-state current ( T j initial = 25 5 C ) t = 8.3ms t = 10ms 85 80 A I 2 t I 2 t value t = 10ms 32 A 2 s dI/dt Critical rate of rise of on-state current (1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2915-v2.htm |
STMicroelectronics | 14/06/1999 | 8.49 Kb | HTM | 2915-v2.htm |
| Undetermined Reset power-off AVS12 AVS12 AVS12 AVS12 5/8 option 7 5 4 NTC NTC 110 V or 220V G 1 N 4007 R1 1M 1 % 8 3 2 1 33 m duration> 20 m s Tj = 110 5 C 0.2 V V TM * I TM = 17A tp = 10ms Tj = 25 5 C 1.75 V I DRM * V DRM rated Gate against disturbances. PIN CONNECTION 1/8 (1) Gate supply : I G =100mA - di/dt = 1A / m s * For either voltage V SS - 0.5 0.5 V I I / I O I / O current - 40 + 40 mA T stg Storage Temperature - 60 + 150 5 C T initial = 25 5 C ) t = 8.3ms t = 10ms 105 100 A I 2 t I 2 t value t = 10ms 50 A 2 s dI/dt Critical rate of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3740-v1.htm |
STMicroelectronics | 02/04/1999 | 8.19 Kb | HTM | 3740-v1.htm |
| Reset power-off AVS12 AVS12 AVS12 AVS12 5/8 option 7 5 4 NTC NTC 110 V or 220V G 1 N 4007 R1 1M 1 % 8 = 17A tp = 10ms Tj = 25 5 C 1.75 V I DRM * V DRM rated Gate open Tj = 25 5 C 10 m A Tj /8 (1) Gate supply : I G =100mA - di/dt = 1A / m s * For either polarity of electrode A 2 voltage SS - 0.5 0.5 V I I / I O I / O current - 40 + 40 mA T stg Storage Temperature - 60 + 150 5 repetitive surge peak on-state current ( T j initial = 25 5 C ) t = 8.3ms t = 10ms 105 100 A I 2 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3740.htm |
STMicroelectronics | 20/10/2000 | 10.6 Kb | HTM | 3740.htm |
| NTC 110 V or 220V G 1 N 4007 R1 1M 1 % 8 3 2 1 AVS10 AVS10 AVS10 AVS10 33 mF 16V A 1 A 2 AVS10CB AVS10CB AVS10CB AVS10CB or = 11A t p = 10ms Tj = 25 5 C 1.75 V I DRM * V DRM rated Gate open Tj = 25 5 C 10 m A Tj PIN CONNECTION 1/8 ABSOLUTE MAXIMUM RATINGS CONTROLLER AVS1ACP08 AVS1ACP08 AVS1ACP08 AVS1ACP08 (1) Gate supply : I G = 100mA - di/dt = 1A / m s * For either polarity of electrode A 2 voltage with reference to electrode A 1 / V O I / O voltage V SS - 0.5 0.5 V I I / I O I / O current - 40 + 40 mA T stg Storage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2915.htm |
STMicroelectronics | 20/10/2000 | 10.95 Kb | HTM | 2915.htm |