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Part : M1N4-CB8V Supplier : ABB Manufacturer : Newark element14 Stock : - Best Price : $1,740.2300 Price Each : $1,950.0400
Part : TSM1N45CT A3G Supplier : Taiwan Semiconductor Manufacturer : Chip1Stop Stock : 6,000 Best Price : $0.1698 Price Each : $0.1698
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M/1N4007 ms

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List , /03/10 Revision Page. C 6 Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 BULK , MS 1N4001 THRU 1N4007 High reliability test capabilities Item Test Conditions Reference , Date 2010/03/10 Revision Page. C 6 Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 1.0A Leaded Type General Purpose Rectifiers - 50V-1000V Package outline Features DO Formosa MS
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1N4001 rectifier silicon diode 1N4001 specifications DS-222111 DO-41 IL-STD-202F METHOD-211A MIL-STD-202F MIL-STD-750D
Abstract: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List , Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 Pinning information Pin , MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 BULK PACKING DEVICE Q'TY 1 , Date 2010/03/10 Revision Page. C 6 Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline Formosa MS
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diode cross reference 1N4007 METHOD-208 METHOD-1038 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1051
Abstract: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List , Date - Revision A Page. 6 Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 1.0A , uA C/W pF +175 O C *1 Repetitive peak reverse voltage 800 1N4007 A 600 , - Revision A Page. 6 Rating and characteristic curves (1N4001 THRU 1N4007) FIG , Document ID Page 3 Issued Date DS-222111 2008/02/10 Revised Date - A 6 Formosa MS Formosa MS
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CHARACTERISTICS DIODE 1N4007 diode 1N4001 specifications 1N4007 RECTIFIER DIODE specifications of 1n4007 diode DIODE 1N4001 data sheet 1N4007 diode METHOD-2036 METHOD-1026 METHOD-1056 METHOD-4066-2 METHOD-1031 METHOD-215
Abstract: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List , Revision Page. C 6 Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 , Date 2010/03/10 Revision Page. C 6 Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline , 1N4004 400 280 400 1N4005 600 420 800 560 1N4007 700 O 50 CJ Formosa MS
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METHOD-2031 METHOD-1021
Abstract: Silicon Rectifier 1N4001 THRU 1N4007 List Formosa MS List , 1N4001 THRU 1N4007 BULK PACKING DEVICE CASE TYPE DO-41 1,000 Q'TY 1 (PCS / BOX) INNER BOX SIZE (m/m) 194 * 84 * 20 CARTON SIZE (m/m) 465 * 220 * 260 Formosa MS Q'TY 2 (PCS / CARTON) APPROX. CROSS , Rectifier 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Features · Axial , -19500 /228 .107(2.7) .080(2.0) DIA. Formosa MS DO-41 Package outline 1.0(25.4) MIN. · Suffix Formosa MS
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DIODE 1N4001 characteristics OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A THOD-208
Abstract: Cycle 50 Hz M ax. Forward Voltage Drop M ax. Reverse Current Type Average Rectified Current a t T , Volts 20 30 40 Silicon Rectifiers 1A 1N4001 to 1N4007, BY133, EM513 (DO-41 Plastic Package , at lF Ir at V R M ax. Forward Voltage Drop Max. Reverse Current Type Amps 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BY133 EM 513 1 1 1 1 1 1 1 1 1 Volts 50 100 200 400 600 800 1000 1300 1600 Amps 30 30 30 30 30 30 30 30 30 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms Volts 1.1 1.1 -
OCR Scan
1N5819M BY253 BY254 1n4001 melf 1N5817 1N5819 1N5817M 1N5818 1N5818M
Abstract: Forward Rectified Current .3 7 5 " (9.5m m ) lead length at T a = 7 5°C Peak Forward Surge Current, 8.3 ms , E RECTROIU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4001 THRU 1N4007 SILICON RECTIFIER , rate flam e retardant * Lead: M IL -S T D -2 0 2 E m ethod 2 0 8 C guaranteed * M ounting position: Any , a m b ie n t te m p e ra tu re u n le s s o th e r w is e s p e c ifie d . S in g le p h a s e , h a , te c u rre n t b y 2 0 % . M A X IM UM RATINGS (At T a = 2 5 °C unless otherwise noted) RATINGS -
OCR Scan
RANGE-50
Abstract: SIGNAL output · Segment Output: P-channel open drain · 40 DIP package MS-011AC · Improved Power on , VDD=6V Max 7.0 0.5 5.0 1500 1800 - 30 600 60 Unit V mA uA uA uA uA uA uA % M , , MS and BLK for T1, T2, T3 and AC PIN CONFIGURATION BLK 40 1 VDD DS1 DS2 T3 T2 , e1 a1 d1 b1 T1 c1 MS CLK HS RES CLOUT AC VSS OI 20 21 OO 40-DIP MS-011AC 2 IN7200 Block Diagram 3 IN7200 Block Diagram (for die) 4 IN7200 IK Semicon
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DIP-40 IN4737A DIGITAL CLOCK IC block diagram of 7 segment IN4007 DATASHEET 18 pin 7 segment display ic 11 pin 7 segment filament MS-011AC 194304MH
Abstract: C1 15 pF OO AC HS GRID MS + FIP RES R9 56 2W D2 1N4007 R2 1k , SIGNAL output · Segment Output: P-channel open drain · 40 DIP package MS-011AC ABSOLUTE MAXIMUM , 7.0 0.5 5.0 1500 1800 - 30 600 60 V mA uA uA uA uA uA uA % M VDD , for CLOUT for DS1, DS2, RES, HS, MS and BLK for T1, T2, T3 and AC PIN CONFIGURATION BLK 40 , g1 e1 a1 d1 b1 T1 c1 MS HS RES CLK CLOUT AC VSS VDD T3 T2 20 21 IK Semicon
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IN7100 SVC-01MS01 01ms01 4.194304 crystal oscillator 1N4732A THH10
Abstract: voltage variations. FB BP/M S PI-4960-011510 (a) Typical Application Schematic VO , is Covered by Patents and/or Pending Patent Applications. LNK603-606/613-616 BYPASS (BP/M , steady-state operation. BYPASS/MULTI-FUNCTIONAL PROGRAMMABLE (BP/M) Pin: This pin has multiple functions: 1 , (DIP-8C) G Package (SMD-8C) FB BP/M 1 8 2 7 6 D 5 4 3a S S D Package (SO-8C) FB BP/M 8 2 7 6 S S 1 D 4 5 S S S S 3b PI Power Integrations
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LNK61X PI-4960-011
Abstract: ; PT8A3299A/B/C/D/M/N/O/P for SCR D R 1 1 33K/2W L D 2 RL207 1N4007 NTC R , 3289(3299)A/B/C/D/M/N/O/P: Heating-on button input. and LED1 driving output 3289(3299)E/F/G/H/Q/R/S/T , SCR/TRIAC trigger output 3289(3299)A/B/C/D/M/N/O/P: Heating-off button input and LED2 driving output , | | | Application Circuit 1. PT8A3289A/B/C/D/M/N/O/P; PT8A3299A/B/C/D/M/N/O/P for TRIAC D R 1 1 33K/2W L 1N4007 NTC 2 Heater R A LED2 1 VR1 RED 1 R 0 K 3 Pericom Semiconductor
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PT8A3289 120/240V PT8A3299/3289 PT0380-2 PT8A3299 PT8A3299A
Abstract: four feet long tube needs 800 V to strike, with a pre­heating time of around 500 ms for the filaments , C7 10 nF D4 R10 10 R T1B T1C D3 1N4007 C5 0.22 mF R9 330 k C4 47 mF + 450 V R7 1.8 M NOTES: * All resistors are ±5%, 0.25 W unless otherwise noted NOTES: * All capacitors , 2 D6 C3 1.0 mF FILTER 6 C17 47 nF 1 630 V C1 10 nF FUSE R2 1.2 M R1 12 k , R9 DIAC R10 10 W +Vaux 1N4007 R8 180 W ­ 0.25 W T1D T1A R12 T1C 5 TURNS C7 Motorola
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AN1601 electronic ballast schematic AN1543 Electronic Lamp Ballast Design FT063 transistor T1C transistor t1A an1543 AN1601/D
Abstract: R5* 3.6 M J2 D3 1N4007 NC T1 C7 is configurable to adjust U1 current limit, see , fitted) · Active mode efficiency >75% (CEC 2008, 72.4%) · BP/M pin capacitor value selects MOSFET , open loop fault causes an overvoltage on the output, VR2 will conduct. When the current into the BP/M , . C5 2.2 nF 250 VAC VR1 P6KE150A D1 1N4007 J1 85-265 VAC D2 1N4007 F1 3.15 A R2 , 1N4007 8 C10 1000 F 25 V 6 3 +12 V, 1 A J3 C11 100 F J4 25 V R7 4 20 RTN Power Integrations
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TNY278PN TNY278 TNY277 TNY279 TNY278 application tny278 flyback DI-91 EN550022
Abstract: D 1N4007 NTC R A VR1 1 0 R 3 K RED LED2 Heater U 1 M , power line 3289(3299)A/B/C/D/M/N/O/P: Heating-on button input. and LED1 driving output 3289(3299)E/F/G/H , driving output SCR/TRIAC trigger output 3289(3299)A/B/C/D/M/N/O/P: Heating-off button input and LED2 , | | | Application Circuit 1 2 1. PT8A3289A/B/C/D/M/N/O/P; PT8A3299A/B/C/D/M/N/O/P for TRIAC D R 1 33K/2W 1 A L 1N4007 NTC 3 R A LED2 Heater VR1 1 0 R 3 K U 1 Pericom Semiconductor
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d 1n4007 ntc1.0 D1N4007 ntc1 NTC3 PT8A3299B PT8A3299C PT8A3299D PT8A3299E PT8A3299F PT8A3299G
Abstract: LNK584DG C2 3.3 uF 400 V D Q1 MMBT3904 FB BP/M R16 750 S D3 1N4007 5 V, 300 mA , Range High-Voltage DC Input Output D LinkZero-AX FB BP/M S CBP Power Down Pulse 2.5 ms Reset/Wake Up Pulse CBP , / MULTI FUNCTION (BP/M) PU 3V + AUTO-RESTART COUNTER FEEDBACK (FB) RESET + 0.9 V , BYPASS/MULTI-FUNCTIONAL(BP/M) : 5.85V (0.1mF). 0.1mF. (). 6.45VMOSFET . G Package (SMD-8C) BP/M Power Integrations
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LNK584 IEC62301 smd-8c PI-2240-012301 SO8C smd8c PI-5909-100410 325VDC3 230VAC WIEC62301 85-265VAC
Abstract: of 100 ms and a duty cycle of 10% in a non-ventilated enclosed adapter measured at +50 °C (see Key , 1N4007 C6 100 uF 10 V VR1 BZX55C5V1 1 2 3 +5 V R5 5.1 k 1/8 W -5 V, 50 mA PI , VAC D1 1N4007 D2 1N4007 D3 1N4007 D4 1N4007 R13 475 k 0.5 W C5 15 uF 450 V PH1 R1 PH2 10 1 W R2 10 1 W PH3 N 10 1 W R5 1k D5 1N4007 D6 1N4007 D7 1N4007 D8 1N4007 12 V, 250 mA C3 100 uF 16 V 1 10 T1 RTN Q1 IRFBC20 Power Integrations
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lnk304pn 1N5204 TNY 177 PN EQUIVALENT tny 175 pn tny 177 pn LNK304PN equivalent LNK603 LNK613 LNK623 LNK302 LNK304 LNK305
Abstract: mH *R5 and R8 are optional components T1 D5 1N4007GP R5* 3.6 M J2 D3 1N4007 , count. 15 0 0 250 500 Time (ms) Figure 3. BP/M Pin OVP Function Shuts Down Power , fitted) Active mode efficiency >75% (CEC standard: 71%) BP/M pin capacitor value selects MOSFET current , open loop fault causes an overvoltage on the output, VR2 will conduct. When the current into the BP/M , . C5 2.2 nF 250 VAC VR1 P6KE150A J1 85-265 VAC F1 3.15 A D1 1N4007 D2 1N4007 Power Integrations
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APPLICATION NOTE TNY278 TNY278 pin use TNY278 datasheet tny278p tny277 tl431 PI-4244-021406 TNY278P EN55002
Abstract: 1N4007 C4 47 mF + 450 V R7 1.8 M D2 MUR180E Q1 MTP4N50E 3 5 + C2 330 mF 25 V 8 , preheating time of around 500 ms for the filaments. However, at the end of life, or under worst case , nF 1 630 V C1 10 nF FUSE R2 1.2 M LINE 220 V R1 12 k Figure 1. Standard Half , SAFETY NETWORK Q2 R9 DIAC R10 T1A 10 W +Vaux 1N4007 R8 180 W - 0.25 W T1D D10 , CLAMP NETWORK Q2 R9 DIAC VZ = 10 V 1N4007 180 W - 0.25 W T1D D10 R12 T1C 5 ON Semiconductor
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ballast Self-Oscillating ELECTRONIC BALLAST 2 LAMP SCHEMATIC datasheet DIAC mc34262 function of diac ballast schematic R16/R17 D10/R8/N4
Abstract: xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx U1 L1 HV D1 1N4007 K1 W2 2 1 D2 1N4007 R1 , 2 C6 10 nF 1 2 NM D3 1N4007 7 VDD VDD R10 NM J3 1 C1 33 F 200 V D4 1N4007 6 WE_Bobbin EF20 C2 150 nF 250 V W3 3 2 1.5 mH C4 TBF NM 8 , C5 470 nF R9 SGND 4.7 M C9 1.2 nF GND K3 2 1 W4 C1 W5 C2 optional lamp , MKDS 1.5/2 R7 1 M 1 M 3 RC 1 T2 inductor selection: J1: 0.66 mH (default for 24 W NXP Semiconductors
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philips cfl 18W DULUX OSRAM cfl schematic ballast T5 13W bridge rectifier using the diode 1N4007 general electric cfl transistor ballast UM10416 UBA2024BP/BT UBA2024BP UBA2024BT
Abstract: of ballast, the protection circuit is a requirement. 2. Schematic diagram 1N4007 1N4007/ See , CSW 220 nF 2 CVDD 10 nF COSC 100 pF SGND GND 4 1N4007 1N4007/ See Note K3 , mounted IN4007 K1 mounted on position 2, 3 R7 1 M Lamp inductor selection 120 V AC: RFUS = 6.8 Ohm/1 W CBUF1, CBUF2 = 10 F/200 V D2 and D3 NOT mounted K1 mounted on position 1, 2 R6 1 M 2 , Running frequency 44 kHz; start frequency 110 kHz 700 ms quasi preheat 120 V (AC): · · · · · · NXP Semiconductors
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UM10393 UBA2024P PLC-18W electronic ballast 18w cfl lamp UM1039 1n4007 smd DIODE IN4007 SMD Capacitor symbols SMD DIODE 1N4007 DATASHEET
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