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Lem LT 300 - t

Catalog Datasheet MFG & Type PDF Document Tags

Lem LT 300

Abstract: Lem LT 300 - t di/dt of 100 A/µs. 011213/3 LEM Components w w w.lem.com Dimensions LT 300-T/SP13 (in mm , Current Transducer LT 300-T/SP13 IPN = 300 A DC For the electronic measurement of , 300 A DC 0 . + 700 A RM min RM max @ ± 300 A m a x @ ± 700 A m a x Secondary nominal current Conversion ratio Supply voltage (± 5 %) Current consumption R.m.s. voltage for AC isolation , accuracy @ IPN , TA = 25°C Linearity L ± 0.5 < 0.1 V mA kV % % Typ IO IOT Offset
LEM
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Lem LT 300 Lem LT 300 - t lem current lt 100 LT 300-T/SP13 lem lt 100 300-T/SP13 94-V0

LT308-S7

Abstract: LEM LT 308 S7 LT 308-S7 IPN = 300 A @ IPN IP RM 300 0 . ± 500 A A · UL 94-V0 RM min with ± 12 V with ± 15 V 300 500 300 500 0 0 0 0 30 7 43 , 0, 3 x IPN IO (- 10°C . + 70°C) Max ± 0.20 ± 0.20 ± 0.20 ± 0.64 t ra tr di/dt f @ 10 % of IP max 3) @ 90 % of IP max di/dt (- 3dB) < 500 100 DC . 100 % % , · (UPS) (SMPS) TA TS RS m @ 4) TA = 70°C - 10 . + 70 -
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LT308-S7 LEM LT 308 S7 LEM LT 308 lem lt 2000 LT308-S

LT208-S7

Abstract: Lem LT 200 LT 208-S7 IPN = 200 A @ IPN IP RM 200 0 . ± 300 A A · UL 94-V0 RM min with ± 12 V with ± 15 V 200 300 200 300 0 0 0 0 50 26 , 0, 3 x IPN IO (- 10°C . + 70°C) Max ± 0.20 ± 0.20 ± 0.20 ± 0.64 t ra tr di/dt f @ 10 % of IP max 3) @ 90 % of IP max di/dt (- 3dB) < 500 100 DC . 100 % % , · (UPS) (SMPS) TA TS RS m @ 4) TA = 70°C - 10 . + 70 -
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LT208-S7 Lem LT 200 LT208 Lem LT 500 Lem LT 208

thyristors 5000 volt 3000 amperes

Abstract: Lem LT 300 - t //A Tarsi1 I t \Û I - I* - w D § 0 400 800 1200 1600 AVERAGE ON-STATE CURRENT, lT , P0U1EREX INC m u o a x D5 DE 1 7 5 c 14bEl QD03DSb S T - 2 S *2 tf , PôüJEREX INC " 02 dTJ 72^ 21 3057 |~~ 'T ` - Z 5 ' '2 0 m V B U E X Pow erex, Inc., Hlllls , .15 212 POIdEREX INC 0 5 De T | 7ET4ti21 0003050 1 1~~> T ` - '2 5 " -2 0 m a m a e x , , (AMPERES) AVERAGE ON-STATE CURRENT, lT(M, (AMPERES) POhlEREX INC "ÔË » F lT S T H b a i
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thyristors 5000 volt 3000 amperes powerex T9G CODE 1AM T9G0 QD03DS BP107 T9G02409 00DS201 T--91 1S697

2322 m

Abstract: lem lt 100 p Resistive E lem ent _ 500 = C a rb o n 5 1 0 - C e rm e t A d ju s tm e n t, Te rm , T o p A djust, Inline Resistance C ode s (C o n s u lt Factory , i © < -« "» -P -1 - I I (.305±.004) P C B Hole Pattern I n m p o r r n t SiCo V , (·397) (-315) M10 x 0 .7 5 - 5.00±0.100nmi (,1>7*.004) _L, t 6.50 mm (·256) _ 12.5 mm (.M 2 , M odel PP - 17 Modular C o n tro l P otentio m eter SPECIFICATIONS Carbon Composition Element
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2322 m lem lt 100 p

ANA 618

Abstract: IC ANA 618 each. · C o n s u lt fa c to ry f o r m o re t h a n fo u r p -n j u n c t i o n c o n f ig u r a tio n s . ·0*3 MAX. 2.03 OIA. n P0UW TY (CATHODE) M ftftK - ~ `t. . É»«* t u r n , 5 ° C to + 1 75°C * * C o n s u lt f a c to r y f o r ra tin g s u p t o 1.5W . corrosion , 30 30 0.535 0.535 0.6 7 ' 0.765 0.880 300 1 M PD 100A 30 T O 50 30 , * Q g a t 1 0.0 m A 0 63 1 24 0.71 - - - - |M ^ 1 +*M 22361 U \iA
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IN4453 ANA 618 IC ANA 618 IN4156 IN4157 IN4829 IN4830 IN5179

2SC1907

Abstract: VARO current It -50 ut A Collector power dissipation Pc 300 mW Junction temperature T, 150 Ã"C Storage temperature T, -55 to r 150 -c MAXIMUM COLLECTOR DISSIPATION CURVE Amboni KiniKfUuc Ta (*Cj ELECTRICAL , a â'" T / - -I V« M -i« V r â  7 i I'« â i »« â'¢i «k 1' 1 , MAXIMUM RATINGS (Ta=25*C) I lem Symbol 2SC1907 Unit Collector io base voilage Varo 30 V Collector to , >CBO le = ÃÛJJA, ÌE = 0 30 V Collector to emitter breakdown votiate Vt&RyctO le - 3tnA. Rat: «â
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VARO 930MH

noble 15am

Abstract: Lem LT 300 - t ·:Maxiftuft:8afoityallagB:v AC50V, DC10V D u al-E lem en t , 5 7 -1 3L - I - ^ 1*5 \ï Hi Í M O U N T IN G S U R F A C E P .C .B .M O U N T IN G D E T A IL (R E F E R E N C E ) _J -2 - i lt D ual C o n ce n tric S haft (D ua l-E le m e nt) x 2 I P .C .B , ·íotalfiotalinnalJUigíB:- 300 ± 5 ° Single S h a ft Type : 2 to 15 m N m S in gle -E le m e nt :Bofafionaf:t-orque:- D ual-S haft(lnner)T ype : 2 to 15 mN m I L 31» Dual-S haft(O uter)T ype : 2 to 20 mN m
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noble 15am XVB93

lvdt datasheet

Abstract: LVDT strain gauge displacement transducer ) . LVDT - 34 AC "LEM" Sealed LVDT Series (Models DSD1000LEM through DSD6000LEM , ("E") - Standard Models ("LE") (DS1000A - DS6000A) - Hermetically Sealed ("LEM") (DS1000LEM - , ) (DSD1000LE2 - DSD6000LE2) - Hermetically Sealed ("LEM") (DSD1000LEM - DSD6000LEM) Daytronic Corporation , www.daytronic.com LVDT - 5 TRANSDUCERS CATALOG TC-7 LVDT'S Fig. LT.3 Typical LVDT Applications , (0.1") TRANSDUCERS PRESSURE Fig. LT.4(b) Dimensions for Models DS200SU - DS1000SU Fig. LT
Daytronic
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lvdt datasheet LVDT strain gauge displacement transducer lvdt DS400A lvdt sensor stainless steel aisi 446 properties

UGF30APT

Abstract: Lem LT 300 - t , recover to 0.25A. 2 . T rr andd Q rr measured on LEM tester: V r=30V , di\dt=50 A/^is I f = 15.0A 3 , s . z Ü : & q 5 I . o ? REVERSE .5 I i5 * < " 1 © g» 3 3 V O LT A G E , V O L T , UGF30APT THRU UGF30DPT ULTRAFAST RECTIFIER Voltage - 50 to 200 Volts Current - 30 Amperes , high temperature switching High temperature soldering guaranteed: 250 "C/10 seconds at terminals % , UGF30APT UGF30BPT UGF30CPT UGF30DPT 50 35 50 100 70 100 30.0 300.0 150 105 150 200 140 200 UNITS Volts
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MIL-STD-750

Lem LT 300 - t

Abstract: TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 10 Amperes FEATURES * Low leakage * Low forward voltage * Surge overload rating: 170 , . IJ4 tJ.4) rt I-t r â'¢J*> CTN Qâ'¢ J r> tr w ^ & n lt C O m cai â'¢n.ai C23 0.6I .40S rc.2 .353 u>8l MAXIMUM RATINGS AND
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KBK10A KBK10M KBK10J

Lem LT 300 - t

Abstract: L5104 S M V tf X MIN. 25 T YP . 35 150 1.2 M AX. 40 300 1.5 UNIT V nA pF % A/W T E S T , - run Vr - R * v* tm Voltage-V F R E Q U E N C Y R ESP O N SE T E R M I N A L C A P A C I T A N C E vs. REVERSE V O L T A G E f-Frequency-GHz C U T - O F F F R E Q U E N C Y vs. M U LT IP L IC A T , 100 mA X * 1 300 nm M AIN C H A R A C T E R IS T IC S IT , - 25 *C) BR E A KD O W N V O L T A G E Q , -40 to +85 mA mA °C °C E LEC T R O -O P T IC A L CH AR ACTERISTICS fT , - 25 °C) C H A R A C T E R
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NDL5200 L5104 NDL5103P NDL5103P1 NDL51Q3P1 L5103P IEM209 42752S

Lem LT 300 - t

Abstract: lem LT 300 FS P 4 formance over the full - 5 5 ° C t o + 1 2 5 °C tem pera ture range. V W - v w U nipolar m odels , - T T- 1 -*- ISVSUPPLV AC34? < GND (TT)- [ -15V (ÌÒ)- ? R E C O M M E N D E D B U R N -IN C IR C U IT (S tandard fo r M IL -S T D - 8 8 3 m odels) O P T , Change -1 0 m o d e ls (to ± 0 .0 5 % l -1 2 m o d e ls (to ± 0 .0 5 % ) - 2 5 ° C T O + 8 5 °C O P E R A T IO N Change in A c c u r a c y ^ -1 0 m o d e ls -1 2 m o d e ls D iffe re n tia l L in e a rity -
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lem LT 300 FS P 4 DAC347 MIL-STD-883

LTSR 6-NP

Abstract: LTSR 25-NP requirements for a great number of applications, LEM's mission to stay in tune with the power electronics , development of this product was a challenge for LEM due to the demanding specification that required new , R in LTSR, is for Reference: LEM's aim was to create the best synergy between an isolated , mastered by the digital components (processors). With the use of a new generation of LEM ASIC, the , undesirable EMI influences (EMI = The interference of 15.3 % of IPN is mainly due to the cabling layout of
LEM
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LTSR 6-NP LTSR 25-NP ch-1228 nanalem LTS 25-NP hall current transducer lts 6-np 25-NP 125/A RS-150125 J-194-0021 ROC-10483 CH-1228

Lem LT 300 - t

Abstract: . 2 100 % 90 % IP Is tr 10 % tra t Figure 24: response time tr and reaction , Substations Footprint compatible with LT 4000 series Test and measurement. Other options available , LEM reserves the right to carry out modiications on its transducers, in order to improve them, without , kV 14 100 % tested in production kV 30 RMS voltage for AC isolation test 50/60Hz/1 min , 21November2011/version 1 LEM reserves the right to carry out modiications on its transducers, in order to
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4000-S 94-VO
Abstract: c le S 2 % hpE Cla ssifica tio n M a k in g hFE1 Y12 75 t o 1 5 0 Y13 100 to 200 Y14 150 to 300 , V c 0 - C o lle c t o r to B a se V o lt a g e - V V g g - E m it t e r to B a se V o lt a g e - V D , f T : f T = 4 0 0 M H z C o m p lem en tary to 2 S C 3 7 3 9 2-8±0.2 3§ 1.5 A B S O L U T E M , c ita n ce T u r n o n T im e S to ra g e T im e T u rn - o ff T im e SYM BO L. >CBO 'E B O hF E 1 , .7 5 - 1.3 0 V V MHz M IN . TYP. MAX. -1 0 0 -1 0 0 300 U N IT nA nA T E S T C O N D IT IO N S V q b -
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2SA1464 1S955

IN4156

Abstract: IN4453 above 50 °C J u n c tio n a n d S torage T em peratures: - 6 5 °C to + 1 7 5 °C " " " C o n s u lt f a , each p-n ju n c tio n c o n trib u te s a p p ro x im ate ly -2 m V/°C each. " C o n s u lt f a c t o r y f o r m o r e t h a n f o u r p - n j u n c t i o n c o n f i g u r a t i o n s . 080 MAX. 2 .0 , assivated D ie E lem ents 0.457/0.559 1 f ig u r e t A li dim ensions in INCH DO , 0.63 0-71 - - - - - 1 *MZ2361 lOjuA - 5.0 - * Q g a t 1 0.0 m A
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MPD100 MPD400A MZ2360 MPD100A MPD200 MPD200A
Abstract: ~| LEM /TEM 23 V DD ·E I D7(M SB) |~5~ CLO CK V DD [7 A D 9561 T O P VIEW (Not to Scale , 00, X X ^ CO, O X ^ EO, i T ^ F F ,) 1 00 PNC % 0% DNC P ULSE 75% TEM 75% DEM , coupling. High speed digital traces including DATA, CLOCK, SEM/ DEM, LEM /TEM and the O U TPU T should not , : 700 m W typical M inim um Pulse W idth: , results.) Inputs are T T L or CMOS compatible, and outputs are CMOS compatible. The AD9561JR is packaged -
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AD9561 AD9560 AD9561/PCB

LT8900

Abstract: itt 2222a ge ne ration C M O S gate array product. T he fam ily con sists o f 22 arrays im p lem e nted on a , IBTTL1 IBTTL2 IBCMOS1 M ultiple o u tp u t d rive r cell C M O S sch m itt trigger, 5 vo lt sup ply T T L sch m itt trigger, 5 vo lt sup ply C M O S & T L L s ch m itt trigger, 3 vo lt sup ply T T L input: 5 vo lt sup ply T T L input: 3 vo lt sup ply C M O S input: 5 vo lt sup ply 3 vo lt to 5 vo lt signal , accuracy. T his is im p lem e nted for op tim um sp e e d de pe nd ing on the p a rticu la r tool. O th e r
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GA84-ACA-2828 LT8900 itt 2222a 2203a ses LT89000 cree 3535 PS-303 AD CLA80000 DS3820-2 LCC68-HC-2525 LCC84-HC-3030 MLA85 MLA87

2N5320

Abstract: 2N5320 HARRIS OOnflbS T 3 3 - HA RR IS S E M I C O N D b HAS Ö 7 Complementary N-P-N & P-N-P Silicon Power , , 2N5322, 2N5323 E L E C T R IC A L C H A R A C T E R IS T IC S , Case Temperature [T q ) - 2 5 °C , ) M U S T N O T be measured on a curve tracer, b Pulsed; pulse duration K . 300 ¿is, duty factor ^ 0 , a n d 2N 532 1. COLLECT« T O -E m ITTEAV O LT A G E(Yce). 4 V St 1 2 I w o u ip B 04 i.s I p lllp B l -04 " -0.5 -T i -6j -04 92CJ-15002H I SASE.TO-EHITTER VOLTAGE (VK ) - V oj ·
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2N5320 2N5320 HARRIS 2N5322 2N5320 2N5321 2NS322 2NS320 2N2102 2N4036
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