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ISL78365ARZ-T7A Intersil Corporation Automotive High Speed Quad Laser Diode Driver; WFQFN40; Temp Range: -40° to 125°C visit Intersil
ISL78365ARZ-T Intersil Corporation Automotive High Speed Quad Laser Diode Driver; WFQFN40; Temp Range: -40° to 125°C visit Intersil
ISL78365ARZ Intersil Corporation Automotive High Speed Quad Laser Diode Driver; WFQFN40; Temp Range: -40° to 125°C visit Intersil
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58303DRTZ-T7A Intersil Corporation 800mA Triple Output Laser Diode Driver; TQFN24; Temp Range: 0° to 70° visit Intersil Buy
ISL58303DRTZ-T13 Intersil Corporation 800mA Triple Output Laser Diode Driver; TQFN24; Temp Range: 0° to 70° visit Intersil Buy

Laser Diode 808 2 pin 1000 mw

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Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw laser diode Series 762 Laser Diode Mounts are compatible with our High- 10 PIN 1: TEC (-) PIN 2: - PIN 3 , of single laser diode stripes emitting at center wavelengths of 670, 808, 980 and 1930 nm and linear array bars emitting at 808 nm. The Aluminum-free laser diode material used in most of these , Key Features · Longer laser diode lifetime due to aluminum free device structures* · Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm LASERS ·
Newport
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SLD323XT

Abstract: 1000mW laser 2 Thermistor lead 1 3 Thermistor lead 2 4 Laser diode anode 5 Laser diode , SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , laser diode is controlled by using built-in T.E. cooler and wavelength can be tuned exactly by this , Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tth = 25°C) · Optical power
Sony
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1000mW laser SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 65MAX M-273 LO-10

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm (Typ.) Optical Power: 1000 mW, CW Integrated Monitor Diode Standard Package: 9 mm , High Power CW Laser Diode, LCG-808-1000M-9N PIN CONFIGURATION 1. Laser Diode Cathode 3. Laser Diode Anode Photodiode Cathode 2. Photodiode Anode 2 3 *Case and Pin no. 3 are common , , Fax: +33 1 3959 5350, info@optophotonics.fr High Power CW Laser Diode, LCG-808-1000M-9N Fig. 1
Laser Components
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Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 808 nm 1000 mw laser diode CW laser diode 808 nm 1200 mw
Abstract: Current Fig.2: Forward Current vs Monitor Current Package Drawing Pin Configuration 1. Laser Diode Cathode 2. Laser Diode Anode Photodiode Cathode 3. Photodiode Anode *Case and Pin no. 2 are , Preliminary Data Sheet High Power CW Laser Diode LCG-808-1000M-9N Features - High-efficiency MQW structure Wavelength: 808 nm (Typ.) Optical Power: 1000 mW, CW Integrated Monitordiode , mA Output power P 800 1000 mW 1200 mA 50 Operating current @ 500 mW Iop Laser Components
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Abstract: PIN CONFIGURATION 2 3 1. Laser Diode Cathode 3. Laser Diode Anode Photodiode Cathode 2 , High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm (Typ.) Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm â , 700 1000 1200 30 9 50 typ 808 600 800 1100 2.2 1600 0.3 1.0 200 40 12 , , Fax: +33 1 3959 5350, info@optophotonics.fr High Power CW Laser Diode, LCG-808-1000M-9N Fig. 1 Laser Components
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Abstract: PIN CONFIGURATION 2 3 1. Laser Diode Cathode 3. Laser Diode Anode Photodiode Cathode 2 , High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm (Typ.) Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm â , 700 1000 1200 30 9 50 typ 808 600 800 1100 2.2 1600 0.3 1.0 200 40 12 , , Fax: +33 1 3959 5350, info@optophotonics.fr High Power CW Laser Diode, LCG-808-1000M-9N Fig. 1 Laser Components
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1090D

Abstract: 808 nm 1000 mw SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C) · Optical power , Storage temperature Tstg ­40 to +85 W V V °C °C Pin Configuration 2 1 3 1. LD , against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical
Sony
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1090D SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 E93207A81-PS M-248 LO-11

808 nm 1000 mw

Abstract: LO-11 SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , Organic Chemical Vapor Deposition 2 QW-SCH: Quantum Well Separate Confinement Heterostructure Pin , : Iop = 1.4A (Po = 1.0W) 2 Applications · Solid state laser excitation · Medical use · Material , quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 1.0W, Tc =
Sony
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1000mW laser diode SLD323V-3 808 nm 100 mw

SLD323XT-21

Abstract: SLD323XT-24 SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high brightness , · Measurement TE Cooler N P LD TH 1 3 2 4 PD 5 6 7 Pin Configuration (Top View) No. Structure AlGaAs quantum well structure laser diode Function 1 3 W , LD PD · Operating temperature (Tth) Topr · Storage temperature Tstg 8 Laser diode (anode
Sony
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SLD323XT-3

808 nm 1000 mw 2 pins

Abstract: Laser Diode 808 2 pin 1000 mw Thermistor lead 2 4 Laser diode (anode) 5 Laser diode (cathode) Structure AlGaAs quantum well structure laser diode 6 Photodiode (cathode) 7 Photodiode (anode) Operating Lifetime MTTF 10 , SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high brightness , Equivalent Circuit TE Cooler N P LD TH 1 2 3 4 PD 5 6 7 8 Pin
Sony
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808 nm 1000 mw 2 pins 2 Wavelength Laser Diode peltier cooler 1w laser diode 830 nm chip thermistor medical device Laser Diode 808 2000 mw
Abstract: Max. 1000 LD Reverse Voltage VR 2 V Min. mW Operating Temperature TCASE - , rev.1.0 16.03.2015 S8081WG Description S8081WG is a infrared laser diode emitting at , Temperature Drawing All dimensions in mm Electrical Connection Lead Pin 1 Pin 2 Pin 3 , workplace, and following strict anti-static guidelines when handling the laser diode Safety Advice This laser diode emits highly concentrated IR light which can be hazardous to the human eye and skin. This Roithner LaserTechnik
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W-250

laser 790 nm sony

Abstract: 1000mW laser diode SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , 1.0W) M-248 Pin Configuration Applications · Solid state laser excitation · Medical use · , Structure GaAlAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at , ". LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 LASER
Sony
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laser 790 nm sony

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw wavelength: 808 +/- 3 nm typ., singlemode Max. optical power: 110 mW NOTE! Package: 9 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode , UNIT mW V V °C °C MIN TYP MAX UNIT 100 mW 35 45 55 mA 140 200 220 mA 805 808 810 nm 10 ° 35 ° 0.75 1.0 mW/mA 100 450 1000 µA Roithner LaserTechnik , Temperature TSTG RATING 110 2 5 -40 . +60 -50 . +80 Optical-Electrical Characteristics (Tc = 25
Roithner LaserTechnik
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RLT808100GS

smd diode UJ 64 A

Abstract: smd diode UM 08 diode chip dies 635, 650, 980 ,1310 nm 20-99 pcs. 20-99 pcs. CHIP-635-P5, 635 nm, 5 mW, laser diode chip die, sm, MOQ 1000 pcs 1,40 CHIP-650-P5, 650 nm, 5 mW, laser diode chip, single ridge waveguide sm, MOQ 1000 pcs 0,93 1,02 CHIP-980-P50, 980 nm, 50 mW, laser diode chip die, sm, MOQ , laser diodes TO-can, TO3, and C-mount package 760 - 808 nm RLT760-10G, 760 nm, 10 mW, sm, 60°C, 9 , laser diode in 14-Pin butterfly package - Ridge waveguide technology - carbon dioxide monitoring -
Roithner LaserTechnik
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smd diode UJ 64 A smd diode UM 08 SLD3237VF SLD3237VFR SLD3236VF 20/SPL1550-10-9-PD RLU4116E RLT390-50CMG RLT395-50CMG RLT400-50CMG RLT405-50CMG DL-3146-151

dvd laser diode 10 pin 700 mw

Abstract: TO56 ://www.lecc.com.tw LASER DIODE PRODUCT LIST (Part No.) ()n (Po) Iop(typ) Iop(Max) (Im) uA (Package) () mW mA mA m 0~800 635 5 35 , , AUTO PACKAGE AUTO PACKAGE AUTO PACKAGE AUTO PACKAGE AUTO PACKAGE AUTO PACKAGE Laser Diode
LECC Technology
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6350-1271-AU 6311-7212-AU 6550-5151-DV 6511-7261-AU 6521-2112-AU 8052-1313-AU dvd laser diode 10 pin 700 mw TO56 CD pickup laser diode 131050 diode product list CD Laser pickup 6350-1271-AU-50 6550-7241-BA 6550-7241-AU-50

808nm 1W laser diode

Abstract: M9-808-1000-03X Product Specifications M9-808-1000-03X 2-pin 9mm TO-can, 808nm Multi-Mode Laser Diode With Micro-lens , Wavelength: 808 Power Options: 1000 1W 808nm 9mm TO-can X Option (aperture size) 0 3 X 50m aperture ±3 nm 2 , mode product line. Axcel's 808nm multi mode laser diode is industry standard 9mm TO-can package with 1W , , FWHM deg, FWHM mA W/A oC oC oC Min 805 1.0 10,000 1.0 -40 -20 - Typ 808 2 1.0 1.1 1.9 1.0 8 180 , without notice. 2) All Axcel Photonics products are TE polarized Germany and other countries: LASER
Laser Components
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808nm 1W laser diode 808nm 1W laser diode 808nm

808 nm 1000 mw 2 pins

Abstract: 808 nm 1000 mw laser diode COMMERCIAL LASERS 0.5 to 4.0 W, 798 to 800/808 to 812 nm Diode Lasers 2300 Series Key Features , -JDSU (5378) WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com 2300 SERIES DIODE LASERS 2 , . 1.187 (30.15) 1 2 3 4 5 6 7 8 TEC (+) Thermistor (1) Thermistor (2) Laser cathode (­ , ) LID O.D. 0.75 (19.0) Laser Output 40 Typ. 1 1.00 (25.4) Dia. 0.16 (4.0) Dia. 2 , ) Case Laser anode (+) Thermistor (2) Thermistor (1) Laser cathode (-) Monitor photodiode anode
JDS Uniphase
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CW laser diode 808 nm DIODE 809 jdsu 2380 2362-P1 2382-P1 498-JDSU 2300DIODELASER

SDL-2362-P1

Abstract: SDL2372P1 ) Window Laser Detail `A' 0.90 (22.9) 0.040 (1.02) Dia. (9 PLCS) Pin 1. TEC ( - ) 2. - 3 , Product Bulletin 0.5 to 4.0 W, 798 to 800/808 to 812 nm Laser Diodes SDL-2300 Series The SDL , /illumination SDL-2300 Series Laser Diodes | 2 Available Configurations SDL-2350 Series SDL-2350-C SDL , 2 0.5 810 (±3) ­ ­ ­ 798 (±3) 808 (±3) ­ ­ ­ ­ 2 1.2 800 (±3) 812 (±3) ­ , 798 (±3) 808 (±3) ­ 0.7 ­ ­ ­ ­ 2 0.9 30 200 x 1 800 (±3) 812 (±3) ­ ­ ­ ­ 798
JDS Uniphase
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SDL-2362-P1 SDL2372P1 SDL-2400 SDL2362P1 SDL-2352-h1 SDL-2360 SDL2300 SDL2400 1-800-498-JDSU 800-5378-JDSU
Abstract: 30 °C, measured with internal temperature sensor PT 100 and PT 1000, separately for each diode laser PT 100 (1 for all TECs at common hot side) 50 °C 2 TECs x 173 W => 346 W 24.6 V, 11.3 A (per TEC) ± 2 nm . ± 3 nm, diode laser wavelengths separately adjustable by TECs See General User , Aperture Fiber Connector Power Monitor Pilot Laser qcw ≤ 0.3 ms / ≤ 20 % 120 120 808 * 938 , Connectors Signal Connector Operation Conditions Expected Lifetime Cooling: Mounting Note Diode Laser JENOPTIK
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JOLD-120-QPXF-2P

650nm 5mw laser

Abstract: ird300 Laser Diode Modules with 25-50% Discount ONLY $29.00 9-Pin 850nm VCSEL SC Duplex 100 Mbps Multimode , chip & array, InGaAs PIN chip & array, laser diodes, PIN photodiodes, diffractive optics, diode driver , , Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products | LASERMATE CORPORATION manufactures green, red, & infrared laser diode modules & products, including diode pumped solid-state green lasers, laser sights, and green & red laser pointers
Lasermate
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650nm 5mw laser ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder OC-12
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