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20007 Honeywell Sensing and Control Honeywell Hour Meter ri Buy
20001 Honeywell Sensing and Control Honeywell Hour Meter ri Buy
SEP8706-002 Honeywell Sensing and Control SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package ri Buy

Laser Diode 808 2000 mw

Catalog Datasheet Results Type PDF Document Tags
Abstract: of single laser diode stripes emitting at center wavelengths of 670, 808, 980 and 1930 nm and linear array bars emitting at 808 nm. The Aluminum-free laser diode material used in most of these devices* results in longer laser diode lifetime due to the lack of oxidation at the device facets, which , Key Features · Longer laser diode lifetime due to aluminum free device structures* · Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm LASERS · ... Original
datasheet

3 pages,
170.12 Kb

LD-808-1000C-C LD-808-1000C-H LD-808-1000C-T LD-808-500C-T LD-808-15C-30-A LD-808-2000C-H LD-808-500C-H 808 nm 1000 mw Laser Diode 10 pin laser diode 670 Laser Diode 808 2000 mw Laser Diode 808 nm LD-670-HHL200 datasheet abstract
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Abstract: SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-01 Specifications Device Package Type Laser Diode TO-18(5.6mm) External dimensions(Units , : sales@uocnet.com Revise by 2004/01/29 SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode , 200.0 400.0 Forward Current(mA) 600.0 SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser , Reverse Laser Vr Voltage PIN PD Vr(PIN) Top Operating Temperature Tstg Storage Temperature ... Original
datasheet

3 pages,
60.37 Kb

laser diode 200mw laser diode 808nm 300 mw IR Laser Diode P200 Laser Diode 250mW 808nm diode laser 808nm 200mW 808nm laser diode SLD-808-P200-01 SLD-808-P200-01 abstract
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Abstract: SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-02 Specifications Device Package Type Laser Diode TO-18(5.6mm) External dimensions(Units , by 2004/09/09 SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode Electrical and , OPTRONICS CORP. 600 0.0 200.0 400.0 Forward Current(mA) 600.0 Unit mA mA Volt mW , Laser Diode T=40oC Relative Intensity Intensity P=250mW T=25oC P=187.5mW P=125mW ... Original
datasheet

3 pages,
64 Kb

P200 808nm laser 808nm ir laser laser diode 200mw diode laser 808nm 200mW laser diode 808nm 808nm laser diode SLD-808-P200-02 SLD-808-P200-02 abstract
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Abstract: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 Specifications (1) Size : (2) Device: (3) Structure 500*300*100m Laser diode bare chip , SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips Electrical and Optical Characteristics(Tc=25 , 400.0 Forward Current(mA) 600.0 SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode , ) Precautions QUALITY ASSURANCE After any processing of laser chip or laser diode TO-CAN (LD) by the customer ... Original
datasheet

3 pages,
162.26 Kb

SLD-808-P200-C-04 SLD-808-P200-C-04 abstract
datasheet frame
Abstract: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 Specifications (1) Size : (2) Device: (3) Structure 500*300*100m Laser diode bare chip , SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips Electrical and Optical Characteristics(Tc=25 , Current(mA) UNION OPTRONICS CORP. SLD-808-P200-C-03 808nm Laser Diode Chips UNION OPTRONICS , Unit mW V 3156 UNION OPTRONICS CORP. No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan, Taiwan ... Original
datasheet

3 pages,
27.24 Kb

TO18 Laser 808nm 300 mw pad to18 808nm 808nm laser diode diode laser 808nm 200mW SLD-808-P200-C-03 SLD-808-P200-C-03 abstract
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Abstract: Laser Products Laser Diode Ta=25°C Device No Package Operating temperature Output power Operating current Monitor current Laser wavelength Beam divergence Topr Po lop Im Xp en 1 e± °C mW mA mA nm deg -Window 01.6 2.3, -LD facet 1.27 02.0 3.5 t 0.3 6.5 1 :LD(-) 2:LD(+), PD(-) 3:PD(+ , 785 9/17 HLDH-808-B-200-01 TO-18 -10-+40 200 260 - 808 9/41 HLDH-808-B-500-01 TO-5 0-+40 500 ... OCR Scan
datasheet

1 pages,
992.56 Kb

Laser Diode 808 nm 808 nm 1000 mw HLDH-660-A-50-01 laser diode 780 nm cd HLDP-650-A-5-01 HLDP-635-A-5-01 Laser Diode for dvd 500 mW HLDH-660-A5001 "dvd pickup" HLDH-660-A-20-01 CD pickup laser diode HLDH-808-B20001 datasheet abstract
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Abstract: CL-808-8000-230 CL-808-8000-230 Safety Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note , the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power , power supplies, the diode laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly while monitoring the diode laser output power and the drive ... Original
datasheet

2 pages,
357.46 Kb

CL-808-8000-230 808nm laser diode 808nm datasheet abstract
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Abstract: Wavelength (nm) Current (mA) 808nm 6W 200um LI 7000 6000 Output Power (mW) 5000 4000 3000 2000 , Wavelength: 808 Power Options: 2000 3000 4000 5000 6000 Safety 2W 3W 4W 5W 6W 808nm C-mount B-mount X , following extremely rigorous anti-static techniques when handling diode lasers. Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical instruments with ... Original
datasheet

2 pages,
197.96 Kb

datasheet abstract
datasheet frame
Abstract: CL-808-8000-230 CL-808-8000-230 Safety Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note , diode lasers. Operating the diode laser outside of its maximum ratings may cause device failure or a , transients. When using power supplies, the diode laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly while monitoring the diode laser output ... Original
datasheet

2 pages,
441.51 Kb

Laser Diode 808 nm 5w Laser Diode 808 nm CM-808-6000-230 808 nm 1000 mw CM-808-5000-230 datasheet abstract
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Abstract: 5000 4500 4000 Output Power (mW) 3500 3000 2500 2000 1500 1000 500 0 -500 0 500 1000 1500 2000 , C4 Wavelength: 808 Power Options: 1000 2000 Safety 1W 2W 808nm C-mount B-mount Q-mount 9mm TO-can , : Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical , following extremely rigorous anti-static techniques when handling diode lasers. Operating the diode laser ... Original
datasheet

2 pages,
196.16 Kb

C4-808-4000-130 BM-808-3000-130 BM-808-1000-130 808nm 1W laser diode datasheet abstract
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Applicationnotes for Zener diodes Title Date AN ZENBLOCK: Zenblock : integrated zener and blocking diode 1999-03-09 diodes Title Date AN ZENBLOCK: Zenblock : integrated zener and blocking diode 1999-03-09 157 1 0 /catalog
www.datasheetarchive.com/files/philips/search/docindex.txt
Philips 25/04/2003 954.24 Kb TXT docindex.txt
/parametrics/11.html Parametrics BF722 BF722 BF722 BF722 Ptot max mW 1200 PNP COMPL BF723 BF723 BF723 BF723 I C max mA 50 fT min MHz 60 hFE max >50 /parametrics/13.html Parametrics PZTA42 PZTA42 PZTA42 PZTA42 Ptot max mW 1200 I C max mA 100 PNP COMPL PZTA92 PZTA92 PZTA92 PZTA92 Category Single high 20 7 1 0 /catalog/parametrics/15.html Parametrics PH2369 PH2369 PH2369 PH2369 Ptot max mW 500 Category Transistors fT min /catalog/parametrics/19.html Parametrics PDZ12B PDZ12B PDZ12B PDZ12B Configuration 1 Ptot max mW 400 Category General purpose mA 200 VCEO max V 15 Ptot max mW 250 Category Single switching transistors fT min MHz 13 1 0 /catalog
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Philips 14/02/2002 998.47 Kb TXT docindex-v2.txt
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www.datasheetarchive.com/download/64007008-139818ZD/00104f.zip (00104f.pdf)
Microchip 01/06/2002 87251.33 Kb ZIP 00104f.zip
/appnotes/28803.html Applicationnotes for Diode Amplifier and Laser Supply Title Date AN96017 AN96017 AN96017 AN96017 1.pdf: Outline Low Vf MEGA Schottky diode / transistor mod Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors and
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Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt
No abstract text available
www.datasheetarchive.com/download/90212243-999460ZC/dbookold.zip (DBOOKOLD.PDF)
Xilinx 07/09/1996 10340.01 Kb ZIP dbookold.zip
No abstract text available
www.datasheetarchive.com/download/26555896-2732ZC/fulltext.dic
Allied Electronics 31/07/2001 4264.14 Kb DIC fulltext.dic