500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL78365ARZ-T7A Intersil Corporation Automotive High Speed Quad Laser Diode Driver; WFQFN40; Temp Range: -40° to 125°C visit Intersil
ISL78365ARZ-T Intersil Corporation Automotive High Speed Quad Laser Diode Driver; WFQFN40; Temp Range: -40° to 125°C visit Intersil
ISL78365ARZ Intersil Corporation Automotive High Speed Quad Laser Diode Driver; WFQFN40; Temp Range: -40° to 125°C visit Intersil
ISL58315CRTZ-T7A Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ-T7 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy

Laser Diode 808 2000 mw

Catalog Datasheet MFG & Type PDF Document Tags

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw laser diode of single laser diode stripes emitting at center wavelengths of 670, 808, 980 and 1930 nm and linear array bars emitting at 808 nm. The Aluminum-free laser diode material used in most of these devices* results in longer laser diode lifetime due to the lack of oxidation at the device facets, which , Key Features · Longer laser diode lifetime due to aluminum free device structures* · Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm LASERS ·
Newport
Original

808nm 5W laser diode

Abstract: Wavelength (nm) Current (mA) 808nm 6W 200um LI 7000 6000 Output Power (mW) 5000 4000 3000 2000 , Wavelength: 808 Power Options: 2000 3000 4000 5000 6000 Safety 2W 3W 4W 5W 6W 808nm C-mount B-mount X , following extremely rigorous anti-static techniques when handling diode lasers. Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical instruments with
Laser Components
Original

BM-808-1000-130

Abstract: 808nm 1W laser diode 5000 4500 4000 Output Power (mW) 3500 3000 2500 2000 1500 1000 500 0 -500 0 500 1000 1500 2000 , BM QA 9H C4 Wavelength: 808 Power Options: 1000 2000 Safety 1W 2W 808nm C-mount B-mount Q-mount 9mm , emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical instruments with , extremely rigorous anti-static techniques when handling diode lasers. Operating the diode laser outside
Laser Components
Original

Laser Diode 808 300 mw

Abstract: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 Specifications (1) Size : (2) Device: (3) Structure 500*300*100m Laser diode , /01 SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips Electrical and Optical , . 600 0.0 200.0 400.0 Forward Current(mA) 600.0 SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips Lasing Spectrum v.s.Case temperature Lasing Spectrum v.s.Optical
Union Optronics
Original

808nm laser diode

Abstract: laser diode 808nm SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-01 Specifications Device Package Type Laser Diode TO-18(5.6mm) External dimensions(Units : mm) B ttomview o Absolute Maximum Ratings(Tc=25) Symbol Parameter Po Optical Output Reverse Laser Vr , by 2004/01/29 SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode Electrical and , 200.0 400.0 Forward Current(mA) 600.0 SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser
Union Optronics
Original

808nm 1W laser diode

Abstract: 808nm laser diode 2w c-mount ) 808nm 4W 100um LI 5000 4500 4000 Output Power (mW) 3500 3000 2500 2000 1500 1000 500 0 -500 0 500 , -808-3000-130 CM-808-1000-130 CM-808-3000-130 Package: CM BM QA M9 C4 Wavelength 808 Power Options: 1000 2000 , rigorous anti-static techniques when handling diode lasers. Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser , increase eye hazard. Operating Considerations Operating the diode laser outside of its maximum ratings
Laser Components
Original
808nm 1W laser diode 808nm laser diode 2w c-mount 808NM cmount 808nm 1W 808-1000 808nm 2W laser diode

TO18 Laser 808nm 300 mw

Abstract: 808nm laser diode SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 Specifications (1) Size : (2) Device: (3) Structure 500*300*100m Laser diode , /19 SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips Electrical and Optical , 400.0 600.0 Forward Current(mA) UNION OPTRONICS CORP. SLD-808-P200-C-03 808nm Laser Diode , -40+85 Unit mW V 3156 UNION OPTRONICS CORP. No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan
Union Optronics
Original
TO18 Laser 808nm 300 mw 808nm laser diode diode laser 808nm 200mW p1875mw pad to18 laser diode bare chip SLD-808-P200-C-03 W-I63

808nm laser diode

Abstract: laser diode 808nm SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-02 Specifications Device Package Type Laser Diode TO-18(5.6mm) External dimensions(Units : mm) Absolute , SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode Electrical and optical Characteristics , 200.0 400.0 Forward Current(mA) 600.0 Unit mA mA Volt mW mA mA deg. deg. deg. deg. um um um nm 1 SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode T
Union Optronics
Original
laser diode 808nm laser diode 200mw ir laser CORP400 Laser Diode 808 300 mw 808nm laser SLD-808-P200-02

CM-808-5000-230

Abstract: 808NM cmount CL-808-8000-230 Safety Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in , handling diode lasers. Operating the diode laser outside of its maximum ratings may cause device failure , switching transients. When using power supplies, the diode laser should be connected with the main power on , Specifications 808nm Multi-Mode Laser Diodes 200m emitter (3W-8W) Description: High brightness, high quality
Laser Components
Original
CM-808-5000-230 808nm CM-808-6000-230 Laser Diode 808 nm 808 nm 1000 mw Laser Diode 808 nm 5w
Abstract: : Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always handle diode , instruments with this product will increase eye hazard. Operating Considerations Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation , advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life Laser Components
Original

808nm laser diode 2w c-mount

Abstract: -808-2000-130 0 BM-808-2000-130 Wavelength 808 808nm Power Options: 1000 1W 2000 2W , Caution Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always , Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power , power supplies, the diode laser should be connected with the main power on and the output voltage at
Laser Components
Original

CM-808-8000-430

Abstract: 808NM cmount light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical , following extremely rigorous anti-static techniques when handling diode lasers. Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation , advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life
Laser Components
Original
CM-808-8000-430 400um CM-808-010W-430

CL-808-015W-430

Abstract: 10w laser diode : Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical instruments with this product will increase eye hazard. Operating Considerations Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation , advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life
Laser Components
Original
CL-808-015W-430 10w laser diode 6080WA

SLD323XT

Abstract: 1000mW laser SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , laser diode is controlled by using built-in T.E. cooler and wavelength can be tuned exactly by this , Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tth = 25°C) · Optical power , 2 Thermistor lead 1 3 Thermistor lead 2 4 Laser diode anode 5 Laser diode
Sony
Original
1000mW laser SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 65MAX M-273 LO-10

808nm laser diode

Abstract: ) Inten sity (a.u.) 808nm 200um 10W spectrum 3000 2000 1000 0 788 798 808 818 828 , light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always handle diode lasers with , instruments with this product will increase eye hazard. Operating Considerations Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation
Laser Components
Original

CL-808-015W-430

Abstract: Caution Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always , Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power , power supplies, the diode laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly while monitoring the diode laser output power and the
Laser Components
Original

1090D

Abstract: 808 nm 1000 mw SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C) · Optical power , against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser
Sony
Original
1090D SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 E93207A81-PS M-248 LO-11

808 nm 1000 mw

Abstract: LO-11 SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 1.0W, Tc = , protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since
Sony
Original
Laser Diode 808 2 pin 1000 mw 1000mW laser diode SLD323V-3 808 nm 100 mw

808 nm 1000 mw

Abstract: C6802 LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 LASER , °C 1200 1000 TC = 25°C TC = 0°C PO [mW] PO [mW] TC = ­10°C TC = ­10°C TC = 30°C 900 600 TC = 30°C 500 300 0 400 800 1200 1600 0 2000 0 1.5 , 0.2 0.4 0.2 802 804 806 808 802 810 804 [nm] 1.0 808 810 808 810 1.0 Tc = 25°C Po = 800mW Tc = 25°C Po = 1000mW 0.8 0.6 0.6 0.8
Sony
Original
C6802 1000MW SLD323VMOCVD 2SLD3002 J93207C19-PS VR10V 1IEC60825-1JISC68024

808 nm 1000 mw laser diode

Abstract: C6802 lead 2 4 Laser diode (anode) 5 Laser diode (cathode) 6 Photo diode (cathode) 7 Photo diode (anode) 8 TE Cooler N P TE cooler (positive) LD TH 1 1 2 3 4 , 810 815 820 SLD323XT 1IEC60825-1JISC68024 LASER DIODE LASER DIODE This product , 0°C PO [mW] PO [mW] Tth = ­10°C Tth = ­10°C Tth = 30°C 900 600 Tth = 30°C 500 300 0 400 800 1200 1600 0 2000 0 1.5 IF [mA] Imon [mA
Sony
Original
808 nm 1000 mw laser diode SLD323X SLD323XTMOCVD 2SLD300 J93208C19-PS SLD323XT-3
Showing first 20 results.