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ZHCS2000TA Diodes Incorporated Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-6
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2000-150-V-RC Bourns Inc General Purpose Inductor, 15uH, 15%, 1 Element, ROHS COMPLIANT
2000892-1 TE Connectivity Ltd Fortis Zd 3Pr 10Col R/A Right Module Asy

Laser Diode 808 2000 mw

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: of single laser diode stripes emitting at center wavelengths of 670, 808, 980 and 1930 nm and linear array bars emitting at 808 nm. The Aluminum-free laser diode material used in most of these devices* results in longer laser diode lifetime due to the lack of oxidation at the device facets, which , Key Features · Longer laser diode lifetime due to aluminum free device structures* · Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm LASERS · Newport
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Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw laser diode tunable lasers diode applications CW laser diode 808 nm LD-808-500C-C LASER DISTANCE METER
Abstract: Wavelength (nm) Current (mA) 808nm 6W 200um LI 7000 6000 Output Power (mW) 5000 4000 3000 2000 , Wavelength: 808 Power Options: 2000 3000 4000 5000 6000 Safety 2W 3W 4W 5W 6W 808nm C-mount B-mount X , following extremely rigorous anti-static techniques when handling diode lasers. Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical instruments with Laser Components
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808nm 5W laser diode
Abstract: 5000 4500 4000 Output Power (mW) 3500 3000 2500 2000 1500 1000 500 0 -500 0 500 1000 1500 2000 , BM QA 9H C4 Wavelength: 808 Power Options: 1000 2000 Safety 1W 2W 808nm C-mount B-mount Q-mount 9mm , emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical instruments with , extremely rigorous anti-static techniques when handling diode lasers. Operating the diode laser outside Laser Components
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BM-808-1000-130 808nm 1W laser diode 808nm 2W laser diode BM-808-3000-130 CM-808-1000-130 808NM cmount
Abstract: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 Specifications (1) Size : (2) Device: (3) Structure 500*300*100m Laser diode , /01 SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips Electrical and Optical , . 600 0.0 200.0 400.0 Forward Current(mA) 600.0 SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips Lasing Spectrum v.s.Case temperature Lasing Spectrum v.s.Optical Union Optronics
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Laser Diode 808 300 mw SLD-808-P200-C-04 W-I63
Abstract: SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-01 Specifications Device Package Type Laser Diode TO-18(5.6mm) External dimensions(Units : mm) B ttomview o Absolute Maximum Ratings(Tc=25) Symbol Parameter Po Optical Output Reverse Laser Vr , by 2004/01/29 SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode Electrical and , 200.0 400.0 Forward Current(mA) 600.0 SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Union Optronics
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SLD-808-P200-01 808nm laser diode laser diode 808nm diode laser 808nm 200mW TO18 Laser 808nm 300 mw 808nm Laser Diode 250mW
Abstract: ) 808nm 4W 100um LI 5000 4500 4000 Output Power (mW) 3500 3000 2500 2000 1500 1000 500 0 -500 0 500 , -808-3000-130 CM-808-1000-130 CM-808-3000-130 Package: CM BM QA M9 C4 Wavelength 808 Power Options: 1000 2000 , rigorous anti-static techniques when handling diode lasers. Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser , increase eye hazard. Operating Considerations Operating the diode laser outside of its maximum ratings Laser Components
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808nm laser diode 2w c-mount M9-808-1000 808-1000 808nm 1W M9-808-1000-130
Abstract: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 Specifications (1) Size : (2) Device: (3) Structure 500*300*100m Laser diode , /19 SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips Electrical and Optical , 400.0 600.0 Forward Current(mA) UNION OPTRONICS CORP. SLD-808-P200-C-03 808nm Laser Diode , -40+85 Unit mW V 3156 UNION OPTRONICS CORP. No, 156 Kao-Shy Road Yang-Mei, Tao-Yuan Union Optronics
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laser diode bare chip p1875mw pad to18 SLD-808-P200-C-03
Abstract: SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-02 Specifications Device Package Type Laser Diode TO-18(5.6mm) External dimensions(Units : mm) Absolute , SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode Electrical and optical Characteristics , 200.0 400.0 Forward Current(mA) 600.0 Unit mA mA Volt mW mA mA deg. deg. deg. deg. um um um nm 1 SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode T Union Optronics
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laser diode 200mw ir laser CORP400 808nm laser P200 SLD-808-P200-02
Abstract: CL-808-8000-230 Safety Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in , handling diode lasers. Operating the diode laser outside of its maximum ratings may cause device failure , switching transients. When using power supplies, the diode laser should be connected with the main power on , Specifications 808nm Multi-Mode Laser Diodes 200m emitter (3W-8W) Description: High brightness, high quality Laser Components
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CM-808-5000-230 CM-808-6000-230 32 8w diode 808 nm 1000 mw Laser Diode 808 nm Laser Diode 808 nm 5w
Abstract: : Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always handle diode , instruments with this product will increase eye hazard. Operating Considerations Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation , advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life Laser Components
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Abstract: -808-2000-130 0 BM-808-2000-130 Wavelength 808 808nm Power Options: 1000 1W 2000 2W , Caution Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always , Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power , power supplies, the diode laser should be connected with the main power on and the output voltage at Laser Components
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Abstract: light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical , following extremely rigorous anti-static techniques when handling diode lasers. Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation , advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life Laser Components
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CM-808-8000-430 400um CM-808-010W-430
Abstract: : Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Note: The use of optical instruments with this product will increase eye hazard. Operating Considerations Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation , advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life Laser Components
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CL-808-015W-430 10w laser diode 6080WA
Abstract: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , laser diode is controlled by using built-in T.E. cooler and wavelength can be tuned exactly by this , Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tth = 25°C) · Optical power , 2 Thermistor lead 1 3 Thermistor lead 2 4 Laser diode anode 5 Laser diode Sony
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1000mW laser SLD323XT-25 SLD323XT-24 SLD323XT-21 SLD323XT-2 SLD323XT-1 65MAX M-273 LO-10
Abstract: ) Inten sity (a.u.) 808nm 200um 10W spectrum 3000 2000 1000 0 788 798 808 818 828 , light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always handle diode lasers with , instruments with this product will increase eye hazard. Operating Considerations Operating the diode laser , increased slowly while monitoring the diode laser output power and the drive current. Device degradation Laser Components
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Abstract: Caution Caution: Laser light emitted from any diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser aperture when the device is in operation. Always , Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power , power supplies, the diode laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly while monitoring the diode laser output power and the Laser Components
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Abstract: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C) · Optical power , against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser Sony
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1090D SLD323V-25 SLD323V-24 SLD323V-21 SLD323V-2 SLD323V-1 E93207A81-PS M-248 LO-11
Abstract: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method1. Compared to the SLD300 Series, this laser diode has a high , quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 1.0W, Tc = , protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since Sony
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808 nm 100 mw 1000mW laser diode SLD323V-3
Abstract: LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 LASER , °C 1200 1000 TC = 25°C TC = 0°C PO [mW] PO [mW] TC = ­10°C TC = ­10°C TC = 30°C 900 600 TC = 30°C 500 300 0 400 800 1200 1600 0 2000 0 1.5 , 0.2 0.4 0.2 802 804 806 808 802 810 804 [nm] 1.0 808 810 808 810 1.0 Tc = 25°C Po = 800mW Tc = 25°C Po = 1000mW 0.8 0.6 0.6 0.8 Sony
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1000MW C6802 SLD323VMOCVD 2SLD3002 J93207C19-PS VR10V 1IEC60825-1JISC68024
Abstract: lead 2 4 Laser diode (anode) 5 Laser diode (cathode) 6 Photo diode (cathode) 7 Photo diode (anode) 8 TE Cooler N P TE cooler (positive) LD TH 1 1 2 3 4 , 810 815 820 SLD323XT 1IEC60825-1JISC68024 LASER DIODE LASER DIODE This product , 0°C PO [mW] PO [mW] Tth = ­10°C Tth = ­10°C Tth = 30°C 900 600 Tth = 30°C 500 300 0 400 800 1200 1600 0 2000 0 1.5 IF [mA] Imon [mA Sony
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SLD323X SLD323XTMOCVD 2SLD300 J93208C19-PS SLD323XT-3
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