LP6836P70 LP6836P70-1 LP6836P70-3 MIL-STD-1686 MIL-HDBK-263

PACKAGED MEDIUM POWER PHEMT · FEATURES 23 dBm Output Power at 1-dB Compression at 15 GHz 11.5 dB Power Gain at 15 GHz 50%

LP6836P70 LP6836P70 PACKAGED MEDIUM POWER PHEMT · FEATURES 23 dBm Output Power at 1-dB Compression at 15 GHz 11.5 dB Power Gain at 15 GHz 50% Power-Added Efficiency · DESCRIPTION AND APPLICATIONS The LP6836P70 LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers. · ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C* ° Parameter Symbol Test Conditions Min Saturated Drain-Source Current* IDSS VDS = 2 V; VGS = 0 V 80 Power at 1-dB Compression P-1dB VDS = 5 V; IDS = 50% IDSS 22 23 dBm Power Gain at 1-dB Compression G-1dB VDS = 5 V; IDS = 50% IDSS 10.5 12 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; PIN = 20 dBm 50 % Maximum Drain-Source Current IMAX VDS = 2 V; VGS = 1 V 190 mA Transconductance GM VDS = 2 V; VGS = 0 V 95 mS Gate-Source Leakage Current IGSO VGS = -5 V Pinch-Off Voltage VP VDS = 2 V; IDS = 2 mA Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = mA 70 Typ Max Units 125 mA 1 15 µA -0.25 -0.8 -2.0 V -11 -15 V Gate-Drain Breakdown |VBDGD| IGD = 2 mA -12 -16 V Voltage Magnitude *frequency=15 GHz, unless otherwise noted *Formerly binned as: LP6836P70-1 LP6836P70-1 = 80-95 mA, LP6836P70 LP6836P702 = 96-105 mA, and LP6836P70-3 LP6836P70-3 = 106-125 mA Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/22/01 Email: sales@filss.com LP6836P70 LP6836P70 PACKAGED MEDIUM POWER PHEMT · ABSOLUTE MAXIMUM RATINGS Parameter Max Units TAmbient = 22 ± 3 °C 7 V VGS TAmbient = 22 ± 3 °C -4 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 18 mA RF Input Power PIN TAmbient = 22 ± 3 °C 150 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG - 175 ºC Total Power Dissipation · VDS Gate-Source Voltage · Test Conditions Drain-Source Voltage Notes: · · Symbol Min PTOT TAmbient = 22 ± 3 °C 1.0 W -65 Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT (PDC + PIN) POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25°C: PTOT= 1.0W (.0036W/°C) x THS where THS = heatsink or ambient temperature. This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. · HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 MIL-STD-1686 and MIL-HDBK-263 MIL-HDBK-263. · APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/22/01 Email: sales@filss.com LP6836P70 LP6836P70 PACKAGED MEDIUM POWER PHEMT · PACKAGE OUTLINE (dimensions in mils) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/22/01 Email: sales@filss.com