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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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GC343DD7LP334KX18K
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Murata Manufacturing Co Ltd
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High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GR331AD7LP333KW01D
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Murata Manufacturing Co Ltd
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High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
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GC331AD7LP333KX18D
|
|
Murata Manufacturing Co Ltd
|
High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GR343DD7LP334KW01L
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Murata Manufacturing Co Ltd
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High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
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