LL700 LL700A - Datasheet Archive

 

SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for Ordinary Wave Detection for Super High Speed Switching Features

 

LL700 LL700, LL700A LL700A SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for Ordinary Wave Detection for Super High Speed Switching Features · Low forward rise voltage (VF) and satisfactory wave · detection efficiency () · Small temperature coefficient of forward characteristic · Extremely low reverse current IR Absolute Maximum Ratings (Ta = 25oC) Parameter Reverse Voltage (DC) Symbol LL700 LL700 LL700 LL700 V 30 15 VRM LL700A LL700A Unit 15 VR LL700A LL700A Peak Reverse Voltage Rating V 30 Forward Current (DC) IF 30 mA Peak Forward Current IFM 150 mA Junction Temperature Tj 125 O -55 to +125 O Storage Temperature Range TS C C Characteristics at Ta = 25oC Parameter Symbol Forward Voltage (DC) Reverse LL700 LL700 Current (DC) LL700A LL700A Conditions Min Typ Max Unit VF1 IF = 1mA - - 0.4 VF2 IF = 30mA - - 1 VR = 15V - - 100 VR = 30V - - 150 VR = 1V, f = 1MHz - 1.3 - pF - 1 - ns - 60 - % IR Terminal Capacitance Ct Reverse Recovery Time* trr Detection Efficiency IF = IR = 10mA Irr = 1mA, RL = 100 Vin = 3V(peak), f = 30MHz RL = 3.9k, CL = 10pF V nA Note: (1) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on Note: (1) the charge of a human body and the leakage of current from the operating equipment. Note: (2) Rated input / output frequency: 2,000MHz. Note: (3) *: trr measuring instrument SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/02/2003