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LF357 Datasheet

Part Manufacturer Description PDF Type
LF357 National Semiconductor JFET Input Operational Amplifiers Original
LF357 STMicroelectronics WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS Original
LF357 Motorola European Master Selection Guide 1986 Scan
LF357 Raytheon Selection Guide 1977 Scan
LF357 Raytheon Linear Integrated Circuit Data Book Scan
LF357 Raytheon Monolithic JFET Input Operational Amplifiers Scan
LF357 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan
LF3573J N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
LF357A Raytheon Selection Guide 1977 Scan
LF357A Raytheon Linear Integrated Circuit Data Book Scan
LF357A Raytheon Monolithic JFET Input Operational Amplifiers Scan
LF357A Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan
LF357AD N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
LF357ADE Raytheon Linear Integrated Circuit Data Book Scan
LF357ADP N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
LF357ADP Thomson Semiconductors J-FET INPUT SINGLE OPERATIONAL AMPLIFIERS Scan
LF357AH National Semiconductor Series Monolithic JFET Input Operational Amplifiers Original
LF357AH Harris Semiconductor Monolithic JFET Input Operational Amplifiers Scan
LF357AH N/A IC Datasheets - Shortform Scan
LF357AH N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

LF357

Catalog Datasheet MFG & Type PDF Document Tags

LF355

Abstract: LF357H time (ts) 5 µs LF357. A Large Power BW Amplifier DS005646-15 For distortion 1% and a 20 Vp-p , LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers May 2000 LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These are the first monolithic JFET , / LF356 1.5 LF357 (AV =5) 1.5 Units µs Extremely fast settling time to 0.01% Fast slew rate Wide , Wideband, low noise, low drift amplifiers j Simplified Schematic DS005646-1 *3 pF in LF357 series
National Semiconductor
Original
LF156 LF156H LF355 LF155/LF156/LF355/LF356/LF357 MNLF156-X MNLF156A-X JM38510/11402BG

IC LF356

Abstract: LMC infrared LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0B ­ MAY 2004 ­ REVISED MAY 2004 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 1 FEATURES 23 Advantages · · · · · · Replace Expensive Hybrid and , Wide gain bandwidth Low input noise voltage 4 5 2.5 20 LF156/ LF256/ LF356 1.5 12 5 12 LF257/ LF357 (AV , processing does not necessarily include testing of all parameters. LF155, LF156, LF355, LF356, LF357
Texas Instruments
Original
IC LF356 LMC infrared ic lf355 pin out of IC LF356 ISO/TS16949

LF357H

Abstract: lf356 time (ts) 5 µs LF357. A Large Power BW Amplifier DS005646-15 For distortion 1% and a 20 Vp-p , LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers May 2000 LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These are the first monolithic JFET , / LF356 1.5 LF357 (AV =5) 1.5 Units µs Extremely fast settling time to 0.01% Fast slew rate Wide , Wideband, low noise, low drift amplifiers j Simplified Schematic DS005646-1 *3 pF in LF357 series
National Semiconductor
Original
DS005646-56 DS005646-46 JM38510/11402SG LF156H/883Q JM38510/11402BGA JM38510/11402SGA AN-227

IC LF356 datasheet

Abstract: LF357 and still maintain stability. CL(MAX) . 0.01 µF. Overshoot 20% Settling time (ts) . 5 µs LF357. , LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These are , / LF356 LF357 (AV =5) Units n Precision high speed integrators n Fast D/A and A/D converters n , in LF357 series. BI-FETTM, BI-FET IITM are trademarks of National Semiconductor Corporation , /LF357 JFET Input Operational Amplifiers May 2000 LF155/LF156/LF355/LF356/LF357 Absolute
National Semiconductor
Original
IC LF356 datasheet DS005646 LF356B

LF357 Motorola

Abstract: LF356 its apply for the LF356B a nd the LF357B, but do not apply fo r the LF356 o r LF357. 6. Settling tim , LF356, LF356B, LF357*, LF357B* MOTOROLA SEMICONDUCTOR TECHNICAL DATA MONOLITHIC JFET , 5). Ceramic DIP 0° to +70-C LF357BJ.J Ceramic DIP MOTOROLA LINEAR/INTERFACE ICs DEVICE DATA LF356, LF357, LF356B, LF357B MAXIMUM RATINGS Rating Symbol LF356B/357B LF356/357 , 2.0pF on LF357 MOTOROLA LINEAR/INTERFACE ICs DEVICE DATA 2-16 LF356, LF357, LF356B, LF357B DC
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OCR Scan
LF357 Motorola LF356/356B LF357/357B

LF357

Abstract: maintain stability. CL(MAX) . 0.01µF. Overshoot ≤ 20% Settling time (ts) . 5µs LF357. A Large Power , LF155,LF156,LF256,LF257,LF355,LF356, LF357 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Literature Number: SNOSBH0B LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input , LF155/ LF355 j Extremely LF156/ LF256/ LF356 LF257/ LF357 (AV =5) Units 4 1.5 , noise voltage Simplified Schematic 00564601 *3pF in LF357 series. BI-FETâ"¢, BI-FET IIâ
National Semiconductor
Original

lf356

Abstract: LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C â'" MAY 2000 â'" REVISED MARCH 2013 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 FEATURES 1 Advantages 23 â'¢ â'¢ â'¢ â'¢ â'¢ â , slew rate LF156/ LF256/ LF356 LF257/ LF357 (AV=5) Units 4 1.5 1.5 μs 5 , . Copyright © 2000â'"2013, Texas Instruments Incorporated LF155, LF156, LF355, LF356, LF357 SNOSBH0C â
Texas Instruments
Original
Abstract: LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C ­ MAY 2000 ­ REVISED MARCH 2013 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 1 FEATURES 23 DESCRIPTION These are the first monolithic JFET input , Low input noise voltage 4 5 2.5 20 LF156/ LF256/ LF356 1.5 12 5 12 LF257/ LF357 (AV=5) 1.5 50 20 12 , processing does not necessarily include testing of all parameters. LF155, LF156, LF355, LF356, LF357 Texas Instruments
Original

LF357 audio amplifiers

Abstract: Lf356 application 20% Settling time (ts) . 5µs LF357. A Large Power BW Amplifier 00564615 For distortion 1% and , LF155,LF156,LF256,LF257,LF355,LF356, LF357 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Literature Number: SNOSBH0B LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers December 2001 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational , / LF357 (AV =5) 1.5 Units 4 µs fast settling time to 0.01% j Fast slew 5 2.5 20 12 5 12
National Semiconductor
Original
LF357 audio amplifiers Lf356 application

LF356

Abstract: LF156 ) . 0.01µF. Overshoot 20% Settling time (ts) . 5µs LF357. A Large Power BW Amplifier 00564615 , LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description , / LF256/ LF356 LF257/ LF357 (AV =5) Units 4 1.5 1.5 µs 5 12 50 V/µs , Schematic 00564601 *3pF in LF357 series. BI-FETTM, BI-FET IITM are trademarks of National , /LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers December 2001 LF155/LF156
National Semiconductor
Original
12NA50 LF256H lf257h
Abstract: LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C â'" MAY 2000 â'" REVISED MARCH 2013 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 FEATURES 1 Advantages 23 â'¢ â'¢ â'¢ â'¢ â'¢ â , LF156/ LF256/ LF356 LF257/ LF357 (AV=5) Units 4 1.5 1.5 s 5 12 50 V , . Copyright © 2000â'"2013, Texas Instruments Incorporated LF155, LF156, LF355, LF356, LF357 SNOSBH0C â Texas Instruments
Original

LF356

Abstract: LH002 stability. CL(MAX) . 0.01µF. Overshoot 20% Settling time (ts) . 5µs LF357. A Large Power BW Amplifier , LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers December 2001 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These , LF155/ LF355 j Extremely LF156/ LF256/ LF356 1.5 LF257/ LF357 (AV =5) 1.5 Units 4 µs , Simplified Schematic 00564601 *3pF in LF357 series. BI-FETTM, BI-FET IITM are trademarks of National
National Semiconductor
Original
LH002 LM3524 FREE Sine Wave Generation Techniques LINEAR INTEGRATED CIRCUITS AN253 LH003 lf356h AN-272 LB-42 AN-275 AN-293 AN-253 LH0024

LF356

Abstract: LF357H /bitting2/imaging/BITTING/mail_pdf/2000/LF357.html (1 of 3) [9/6/2001 11:35:15 AM] National P/N LF357 - , 20% Settling time (ts) . 5 µs LF357. A Large Power BW Amplifier DS005646-15 For distortion , / class="hl">LF357.html (2 of 3) [9/6/2001 11:35:15 AM , / class="hl">LF357.html (3 of 3) [9/6/2001 11:35:15 AM , LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers May 2000 LF155/LF156/LF355
National Semiconductor
Original
home electronic projects schematic IC LF357 LF356 equivalent lf355 national

IC LF356 datasheet

Abstract: LF357 % Settling time (ts) 5 µs LF357. A Large Power BW Amplifier DS005646-15 For distortion 1% and a 20 , LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These are , gain: 106 dB 100 dB Uncommon Features LF155/ LF355 LF156/ LF356 LF357 (AV =5) Units , Schematic DS005646-1 *3 pF in LF357 series. BI-FETTM, BI-FET IITM are trademarks of National , /LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers May 2000 LF155/LF156/LF355/LF356/LF357
National Semiconductor
Original
lf356 op-amp IC LF155 datasheet lf356 op-amp datasheet LF356BH LF356 op-amp application

lf358

Abstract: 505PA GC LF355./LF356, LF357, LF255/LF256 LF257 LF155/LF156 LF157 0 °C to + 70 °C - 40 °C to + 105 °C , LF155-LF156-LF157 maximum ratings Symbol Parameter LF355, A LF356, A LF357, A LF255 LF256 LF257 LF155, A LF156, A , LF155-LF156-LF157 electrical characteristics lf355, lf356, lf357 : 0 °C < Tamb < + 70 'C, VCc = ± 15V lf355a, lf356a, lf357a : 0 "C < Tamb < + 70 °C, ± 15V < Vcc < ± 18V (note 3) (Unless otherwise specified). Symbol Parameter LF355, LF356, LF357 LF355A, 356A, 357A Unit Min. Typ. Max. Min. Typ. Max. Vio
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OCR Scan
lf358 505PA LF158 LF258 LF358 DIP ol 9nc 60 E88LF155-36 E88LF155-37 E88LF155 LF155-40 E88LF155-41

lf356

Abstract: lf357 LF357BJ.J Ceramic DIP Temperature Range Package Ceramic DIP ·NOTE: The LF357/357B are designed for , fo r the LF356B and the LF357B, but do not apply for the LF356 o r LF357. 6. Settling tim e is , MOTOROLA SEMICONDUCTOR TECHNICAL DATA LF356, LF356B, LF357*, LF357B* 2 MONOLITHIC JFET , DEVICE DATA 2-15 LF356, LF357, LF356B, LF357B MAXIMUM RATINGS Rating Supply Voltage Symbol Vcc , , LF357, LF356B, LF357B DC ELECTRICAL CHARACTERISTICS (Vc c = +15 V to 20 V , VEE = -15 V to -20 V for
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OCR Scan
356B lf357 equivalent dci -dc inverter LF3S6/356B

LF357

Abstract: LF355 apply for the LF356B and the LF357B, but do not apply for the LF356 or LF357. (6) Settling time is , to +70°C Metal Can LF357BJJ Oto +70°C Ceramic DIP ® 0 I E 80495 DT-li- LF355, LF356, LF357* LF355B , 80496 ' D f^^/iT LF355, LF356, LF357, LF355B, LF356B, LF357B " ' MAXIMUM RATINGS Rating Symbol LF355B , on LF357. MOTOROLA LINEAR/INTERFACE DEVICES 2-17 MOTOROLA SC {TELECOM} Dl ⡠⡠AT) M "ì 7 6367253 MOTOROLA SC (TELECOM) LF355, LF356, LF357, LF355B, LF356B, LF357B 0 1E 80497 " D T-l^'ÌS ^ DC
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OCR Scan
lf355 motorola 355b LF367 LF 355 VR8F LF35 LF355/355B

LF357H

Abstract: LF355 20% Settling time (ts) . 5 µs LF357. A Large Power BW Amplifier DS005646-15 For distortion , LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers May 2000 LF155/LF156/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These are the first monolithic JFET , 100 dB Uncommon Features LF155/ LF355 j LF156/ LF356 1.5 LF357 (AV =5) 1.5 Units µs , pF in LF357 series. BI-FETTM, BI-FET IITM are trademarks of National Semiconductor Corporation
National Semiconductor
Original
high Q notch filter LF356M LF356MX LF356N

LF357 audio amplifiers

Abstract: lf356 LF155, LF156, LF355, LF356, LF357 www.ti.com SNOSBH0C ­ MAY 2000 ­ REVISED MARCH 2013 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers Check for Samples: LF155, LF156, LF355, LF356, LF357 1 FEATURES 23 DESCRIPTION These are the first monolithic JFET input , Low input noise voltage 4 5 2.5 20 LF156/ LF256/ LF356 1.5 12 5 12 LF257/ LF357 (AV=5) 1.5 50 20 12 , processing does not necessarily include testing of all parameters. LF155, LF156, LF355, LF356, LF357
Texas Instruments
Original
LF356 "pin compatible" pin out of IC LF355 ic 356n

LF357H

Abstract: LF357 itting2\imaging\BITTING\mail_pdf\recode\LF357.html 3/14/01 National P/N LF357 - JFET Input , 20% Settling time (ts) . 5 µs LF357. A Large Power BW Amplifier DS005646-15 For distortion , class="hl">LF357.html 3/14/01 National P , . Application Notes class="hl">LF357.html 3/14/01 , :// class="hl">LF357.html 3/14/01 National
National Semiconductor
Original
AN-263 AN-447

LF157

Abstract: LF355-LF356-LF357 ber LF355, LF356, LF357 LF255, LF256, LF257 LF155, LF156, LF1 57 Exam ple : LF355N Tem perature Range , , LF356, LF357 0°C Symbol V lo < Tamb ^ +70°C Vcc = +15V, Min. (unless otherwise specified , - L F 3 5 6 -LF357 Tamb Tmin. i Tamb i Tmax. Tamb Tmin. Tamb ^ Tmax. lio Input O ffset , ) = 25°C Input O ffset Voltage Drift (Rs = 50£2) LF355 LF356, LF357 25 15 80 200 100 2 5 5 0.5 , LF355 LF356 LF357 LF355 LF356 LF357 5 5 20 V/|is Slew Rate Av = 1 Av = 5 (Tamb = 25 C) (Tamb
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OCR Scan
LF355-LF356-LF357 1012C IC LF155 LF357 CH LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357
Showing first 20 results.