LDTC113ZLT1G LDTC113ZWT1G LDTC113ZLT3G

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network · LDTC113ZLT1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network · LDTC113ZLT1G LDTC113ZLT1G Applications Inverter, Interface, Driver · 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. · 1 2 SOT-23 We declare that the material of product compliance with RoHS requirements. 1 BASE Absolute maximum ratings (Ta=25°C) Parameter Limits Symbol VCC 50 VIN -5 to +10 V IO 100 IC(Max.) R2 V Input voltage 3 COLLECTOR 2 EMITTER Unit LDTC113ZWT1G LDTC113ZWT1G Supply voltage R1 100 Output current mA Power dissipation PD 200 Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C mW DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC113ZLT1G LDTC113ZLT1G BC 1 10 3000/Tape & Reel LDTC113ZLT3G LDTC113ZLT3G BC 1 10 10000/Tape & Reel Electrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Symbol Min. Typ. Max. VI(off) - - 0.3 VI(on) 3 - - VO(on) - 0.1 0.3 V II - - 7.2 mA VI=5V Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=20mA IO/II=10mA/0.5mA IO(off) - - 0.5 µA VCC=50V, VI=0V DC current gain GI 33 - - - VO=5V, IO=5mA Input resistance R1 0.7 1 1.3 k Resistance ratio R2/R1 8 10 12 - - 250 - MHz Output current Transition frequency fT - - VCE=10V, IE= -5mA, f=100MHz Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTC113ZLT1G LDTC113ZLT1G Electrical characteristic curves 100 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) 20 10 5 Ta=-40°C 25°C 100°C 2 1 500m VCC=5V 2m 1m 500µ Ta=100°C 25°C -40°C 200µ 100µ 50µ 20µ 10µ 5µ 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 2µ 1µ 0 50m 100m OUTPUT CURRENT : IO (A) 1k 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1 VO=5V 500 lO/lI=20 500m Ta=100°C 25°C -40°C 200 100 OUTPUT VOLTAGE : VO (on) (V) DC CURRENT GAIN : GI INPUT VOLTAGE : VI (on) (V) 50 50 20 10 5 2 Ta=100°C 25°C -40°C 200m 100m 50m 20m 10m 5m 2m 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTC113ZLT1G LDTC113ZLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3