LDTB123TET1G SC-89 LDTB123TET3G 463C-01 463C-02

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network · · LDTB123TET1G LDTB123TET1G Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. · We declare that the material of product compliance with RoHS requirements. 1 2 SC-89 SC-89 1 BASE Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 VEBO -5 IC -500 mA Collector power dissipation PC 200 2 EMITTER V Collector current 3 COLLECTOR V Emitter-base voltage R1 mW Parameter Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB123TET1G LDTB123TET1G K1 2.2 3000/Tape & Reel LDTB123TET3G LDTB123TET3G K1 2.2 10000/Tape & Reel Electrical characteristics (Ta=25°C) 1/3 LESHAN RADIO COMPANY, LTD. LDTB123TET1G LDTB123TET1G Electrical characteristic curves 2/3 LESHAN RADIO COMPANY, LTD. LDTB123TET1G LDTB123TET1G SC-89 SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 463C-01 OBSOLETE, NEW STANDARD 463C-02 463C-02. 3/3