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LDR Datasheet Datasheet

Part Manufacturer Description PDF Type
LDR100SB Acrian 100 W, 36 V, 1200/1400 MHz, L-band radar Scan
LDR100SB-2 Acrian 100 W, 36 V, 1200/1400 MHz, L-band radar Scan
LDR100SB-3 Acrian 100 W, 36 V, 1200/1400 MHz, L-band radar Scan
LDR1101 Siemens T1 LED Lamps / Red / Yellow / Green Scan
LDR1102 Siemens T1 LED Lamps / Red / Yellow / Green Scan
LDR1103 Siemens T1 LED Lamps / Red / Yellow / Green Scan
LDR18233PT-R STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1825 STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1825K7-R STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1825PT-R STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1833 STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1833 STMicroelectronics Very low drop dual voltage regulator Original
LDR1833 STMicroelectronics Very low drop dual voltage regulator Original
LDR1833K7 STMicroelectronics Very low drop dual voltage regulator Original
LDR1833K7 STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1833K7-R STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1833K7-R STMicroelectronics Very low drop dual voltage regulator Original
LDR1833PT STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
LDR1833PT STMicroelectronics Very low drop dual voltage regulator Original
LDR1833PT-R STMicroelectronics VERY LOW DROP DUAL VOLTAGE REGULATOR Original
Showing first 20 results.

LDR Datasheet

Catalog Datasheet MFG & Type PDF Document Tags

ldr 3 pin metal package

Abstract: sensitivity of ldr (LDR) and high dose rate (HDR) total ionizing dose (TID) test results, drift calculations and an , fail at a low dose rate (LDR) that is closer to the dose rate seen in a space application [1]. , outlined in MIL-STD-883, TM1019 [5]. Testing under LDR conditions was not routine, due to the time , applications. It had been proposed that it might be possible to simulate LDR response by irradiating products , margin of two for the parametric drift to qualify bipolar products for LDR environments [8]. This dose
National Semiconductor
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ldr 3 pin metal package sensitivity of ldr LDR SPECIFICATION LDR resistor LDR Datasheet 5662-0050101QXA LM136-2

sensitivity of ldr

Abstract: MIL-STD-883G tables indicate if any of the LDR test results were outside the pre irradiation datasheet and SMD , it might be possible to simulate low dose rate (LDR) response by irradiating products at elevated , parametric drift to qualify products bipolar products for LDR environments [7]. This dose rate has been adopted for the LDR qualification in the latest revision of MIL-STD-883 (rev G) Test Method 1019 (rev. 7 , (Si) for LDR applications and could be considered to be "ELDRS-free". II. PRODUCTS TESTED The
National Semiconductor
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LM111 LM119 MIL-STD-883G MILSTD-883G specification of ldr 3 pins LDR LM119xRLQMLV LM 3171 MIL-PRF-38535

sdr sdram pcb layout guidelines

Abstract: sdr sdram pcb layout in the datasheet of the SDRAM device being used. 1 The SDRAM datasheet lists the timing , register value that will be written to the SDRAM device during its initialization. Refer to the datasheet , sequence, so refer to the datasheet of the particular SDRAM used to determine the correct sequence. The , datasheet of the SDRAM device being used for a catalog of the control bits in the mode control register. 1 , all DDR SDRAM devices require the same initialization sequence, so refer to the datasheet of the
Altera
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AN141 sdr sdram pcb layout guidelines sdr sdram pcb layout sdram controller excalibur Board ARM922TTM 800-EPLD

specification of ldr

Abstract: LDR SPECIFICATION Trinh, and Joe Benedetto, PhD, Senior Member, IEEE Abstract- Low dose rate (LDR), ultralow dose rate , have been shown to fail LDR TID testing at doses from 18 to 25 krad(Si) [6][7]. INTRODUCTION , exposed at a low dose rate (LDR), Manuscript received July 29, 2009 Kirby Kruckmeyer is with National , [8]. Testing under LDR conditions was not routine, due to the time constraints. It can take several , it might be possible to simulate LDR response by irradiating products at elevated temperatures at
National Semiconductor
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LM2941 LM2941WGRLQMLV 5962R9166702VYA ETS500 texas ldr LDR internal diagram LM2941 AN

LDR Datasheet

Abstract: ARM str71 mechanism. For further information on boot modes, refer to the STR71 datasheet. The following table , 0 1 2 LDR LDR LDR CMP BEQ CMP LDRCC STRCC BCC LDR ADD MOV CMP STRCC BCC , EIM bank 1 with 7 wait states and 16 bit wide. LDR LDR STR STR STR r0, r1, r1, r1, r1, =GPIO2_Base_addr =0x0000000F [r0, #PC0_off_addr] [r0, #PC1_off_addr] [r0, #PC2_off_addr] LDR LDR STR r0 , and copying the vector table to memory address 0x0. IF :DEF: remap_flash MOV r0, #FLASH_mask LDR
STMicroelectronics
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AN1777 ARM str71 LDR 03 datasheet LDR 03 LDR -03 data on LDR AN1777/0304

TINKERKIT LDR SENSOR

Abstract:  PRODUCT INFO TinkerKit LDR Sensor Code: T000090 LDR (or Light Dependant Resistor, or Photoresistor) is a variable resistor. Light falling on the sensor decreases its resistance. Output: This , , and T000090 LDR Analog Sensor connected to I0, maps the result to a range from 0 to 255  and uses , pin that the LDR is attached to const int analogOutPin= O0; // Analog output pin that the LED is ,               } [Get Code] Datasheet Example Projects: SHIPPING & RETURNS
Arduino
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TINKERKIT LDR SENSOR T010111

ldr 10k

Abstract: LDR 24v Interference) emission due to the inherent smooth driver wave forms. ( Top View ) 14pin SSOP CHV LDR , 2530 LDR 1500 2530 14 VSS1 190 1600 15 (0, 0) 2310 OUT2 13 6 5 , ENA OUT2 OUT1 CHV High Voltage Switching Circuit Enable Circuit CPO LDR VDD , voltage pin - 12 MONG o Monitor gate 2 13 LDR o Step - up inductor driver , VIN All input pins VSS - 0.3 to VDD + 0.3 V VCHV CHV pins 0.5 to 120 VLDR LDR
Nippon Precision Circuits
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SM8140A CF8140A SM8140AM 1SS250 ldr 10k LDR 24v LDR 20K ldr 100k 817CE-471M ldr block diagram 80MAX 200VP

specification of ldr

Abstract: LDR SPECIFICATION CURRENT (mA) 6 4 ISVP, LDR, BIASED ISVN, HDR, BIASED ISVP, CONTROL ISVN, CONTROL ISVP, SPEC LIMIT -2 ISVN, LDR, BIASED ISVN, LDR, GND 0 ISVP, LDR, GND ISVP, HDR, BIASED , -9.6mA (negative supply). 500 400 OFFSET VOLTAGE (µV) 300 200 100 0 -100 CH A, LDR, BIASED CH C, LDR, BIASED CH A, LDR, GND CH C, LDR, GND CH A, HDR, BIASED CH C, HDR, BIASED SPEC LIMIT -200 -300 CH B, LDR, BIASED CH D, LDR, BIASED CH B, LDR, GND CH D, LDR, GND CH B, HDR
Intersil
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LDR voltage range ISL70444SEH AN1870

ldr resistor

Abstract: ldr sensor measurement Brightness control using a light dependent resistor (LDR) The six application cases , Brightness control using a light dependent resistor (LDR) . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Connecting an LDR resistor , the device datasheet for power consumption values. Note: If the analog threshold corresponds to , refer to the specific device datasheet for power consumption values. Note: No hysteresis is
STMicroelectronics
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AN3248 RM0038 ldr sensor sensor LDR curve sensor LDR Light Dependent Resistor LDR light intensity variation on ldr stm32l pwm dc motor STM32L15 STM32L1

mrc btb 15 600

Abstract: I8031 based on Intel® XScaleTM Micoarchitecture Datasheet (273414) · Intel® 80312 I/O Companion Chip Datasheet (273425) Hardware design specifications for the 80310 I/O processor chipset product are found in , _start: b _real_start ldr pc, _UNDEFINED_ISR ldr pc, _SWI_ISR ldr pc, _PREFETCH_ABORT_ISR ldr pc, _DATA_ABORT_ISR ldr pc, _ADDR_ERROR_ISR ldr pc, _IRQ_ISR ldr pc , Microarchitecture Initialization ldr r0,=(ARM_PSR_IRQ | ARM_PSR_FIQ | ARM_PSR_MODE_SVC) msr cpsr, r0 ldr sp
Intel
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mrc btb 15 600 I8031 0X00002 CACHE MEMORY 0XB20 0004H
Abstract: DATASHEET Radiation Hardened 30V 32-Channel Analog Multiplexer ISL71841SEH Features The , Ld CDFP, please refer to the ISL71840SEH datasheet for more information. For a list of differences , . Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or , FIGURE 52. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION 20 30 40 50 60 FIGURE 53. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION 10 2.5 8 GROUNDED 2.0 BIASED 6 rDS(ON) (Î Intersil
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FN8735

NIPPON CAPACITORS

Abstract: transistor 495 switching circuit functional blocks. Block Diagram EL < 70cm2 VDD LDR CHV OUT1 OUT2 , counter emf appears on pin LDR. L L I LDR CHV Inductor drive CLK (Internal CLK) ON Inductor drive transistor Diode I CCHV Diode CCHV LDR CHV Inductor drive CLK (Internal CLK) OFF Inductor drive , 0[A] max 100[V] LDR pin VDD VSS CHV pin max 100[V] tON 1/fLDR [sec] VSS Figure , applied to the inductor for time tON, given by: 1 - [sec] t ON = 0.75 × -f LDR and the energy
Nippon Precision Circuits
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NIPPON CAPACITORS transistor 495 SM8144 SM8144B CUITS--18 NK0005AE CIRCUITS--19

sensor LDR

Abstract: ldr sensor Matrix Multimedia Sensor Board Sensor Board datasheet +V GND e blocks sensors , (Appendix 1) consists of up to 4 sensors, an LDR, a variable resistor to simulate varying analogue signal , conditions, for example block light to the LDR, should change the values on the LCD display. This should , four main devices. The board has a Light Dependant Resistor (LDR) to enable quick analogue light , datasheet gives further details on all sensors. Product Conductivity probe HSCON HSDCP
Matrix Multimedia
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ph sensor LDR light sensor sensor LDR diagram motion DETECTOR CIRCUIT using LDR motion DETECTOR CIRCUIT DIAGRAM sensor LDR 1 EB-003-00-1

LM 3171

Abstract: NATIONAL LM193 INSIDE DRAWING low dose rate (LDR) that is closer to the dose rate seen in a space application. National , parameters. The HDR and LDR drift data for these products is presented here. II. PRODUCT DESCRIPTIONS , units biased and unbiased during irradiation at LDR and HDR. The conditions used for irradiation and , )/s at National Semiconductor's radiation facility in South Portland, Maine. The LDR irradiation was , facility. All datasheet and SMD parameters were tested. For the HDR legs testing was done at 0, 3, 10, 30
-
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LM124 LM139 LM193 NATIONAL LM193 INSIDE DRAWING smd 3773 3773 DIP 3773 SMD LM139A/LM139QML

NORPS-12 LDR

Abstract: . ISL71091SEH TOTAL DOSE TEST ATTRIBUTES DATA PART DOSE RATE (Note 1) BIAS SAMPLE SIZE LDR , Anneal ISL70419SEH LDR Grounded 12 Anneal Submit Document Feedback 2 AN1949 , -883 TM1019; the actual dose rate for these tests was 65 rad(Si)/s. LDR indicates low dose rate (0.01 rad(Si , passed the 129.5 dB SMD limit at all downpoints. 150 LDR BIAS CH1 SPEC LIMIT LDR BIAS CH2 100 LDR BIAS CH3 INPUT OFFSET VOLTAGE (µV) POST 450k HDR ANNEAL LDR BIAS CH4 LDR GND CH1 50
Intersil
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NORPS-12 LDR

ldr 10k

Abstract: LDR 07 equivalent oscillator, booster, and high voltage switching circuit functional blocks. Block Diagram VDD LDR CHV OUT1 OUT2 VDD LDR CHV High voltage Switching circuit Divider 1/4 VSS , on pin LDR. L L Diode Diode I I LDR CHV CHV Inductor drive CLK (Internal CLK) Inductor drive CLK (Internal CLK) CCHV LDR CCHV ON Inductor drive transistor OFF Inductor , ] max 100[V] Inductor current waveform VDD VSS LDR pin CHV pin max 100[V] tON VSS
Nippon Precision Circuits
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SM8142 SM8142A SM8142B LDR 07 equivalent Antenna Coil 330uh SM8142AD ldr blue 3 pins LDR Datasheet ldr 07 CIRCUITS--12 NK9905BE CIRCUITS--13

marking code RAD SMD Transistor npn

Abstract: JS55 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 , discrepancies between this datasheet and the relevant agency specification, the latter takes precedence , krad: ESCC LDR Target 2N5551UBx ESCC Flight 5201/019 UB - Target SOC5551RHRx ESCC Flight 5201/019 LCC-3 100 krad: ESCC LDR Yes SOC5551HRx ESCC Flight 5201/019 LCC-3 - Yes 2N5551RHRx ESCC Flight 5201/019 TO-18 100 krad: ESCC LDR -
STMicroelectronics
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marking code RAD SMD Transistor npn JS55 MIL-PRF19500 JANSR2N5551UB MIL-PRF19500/761 JANS2N5551UB 2N5551RUB 2N5551UB
Abstract: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 , 5204-002 specification. In case of conflict between this datasheet and ESCC detailed specification, the , krad: ESCC LDR Yes 2N5153SHRG ESCC 5204/002 SMD.5 Emitter on Pin 1 Yes 2N5153RHRx ESCC 5204/002 TO-39 100 krad: ESCC LDR - 2N5153HRx ESCC 5204/002 TO-39 - - 2N5153RESYHRx ESCC 5204/002 TO-257 100 krad : ESCC LDR - 2N5153ESYHRx STMicroelectronics
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2N5153RSHRG 2N5153RHR 2N5153RESYHR 2N5153ESYHR ID15386
Abstract: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 , case of discrepancies between this datasheet and the relevant agency specification, the latter takes , krad: ESCC LDR Target 2N5401UBx ESCC Flight 5202/014 UB - Target SOC5401RHRx ESCC Flight 5202/014 LCC-3 100 krad: ESCC LDR Yes SOC5401HRx ESCC Flight 5202/014 LCC-3 - Yes 2N5401RHRx ESCC Flight 5202/014 TO-18 100 krad: ESCC LDR - STMicroelectronics
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JANSR2N5401UB MIL-PRF-19500/766 JANS2N5401UB 2N5401RUB 2N5401UB SOC5401RHR
Abstract: 100krad(Si) downpoint. Reference Documents â'¢ MIL-STD-883 test method 1019 â'¢ ISL71840SEH datasheet , ISL71840 (HDR/LDR) Mask # 54252A01 V1 R1 1 (Vdd) 2 N/C 3 N/C (Out) 28 (Vss) 27 (S8) 26 (S7) 25 , Data Plots 400 SPEC LIMIT POSITIVE SUPPLY CURRENT (µA) 350 300 250 LDR BIASED LDR , ) NEGATIVE SUPPLY CURRENT (µA) -200 -250 -300 SPEC LIMIT -350 LDR BIASED LDR GND -400 , CURRENT (µA) 400 SPEC LIMIT 350 300 250 LDR BIASED LDR GND HDR BIASED 200 0 50 Intersil
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TR010
Showing first 20 results.