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LDMOS NONLINEAR

Catalog Datasheet Results Type PDF Document Tags
Abstract: , DS4305 DS4305, LDMOS, Power Amplifier, RF, Bias Sep 16, 2005 APPLICATION NOTE 3617 Using the DS4303 DS4303 to Bias LDMOS RF Power Amps Abstract: LDMOS RF power amps dominate the GSM and CDMA base-station markets , performance with LDMOS amplifiers is compensating the gate bias voltage to maintain a constant quiescent current over temperature. Several solutions currently exist for biasing LDMOS RF power amps, including , amplifier. Figure 1. DS4303 DS4303 functional diagram. DS4303 DS4303 LDMOS Biasing Circuit The circuit in Figure 2 ... Original
datasheet

3 pages,
36.99 Kb

LDMOS digital LDMOS DS4305 DS4303 DS1870 APP3617 AN3617 LDMOS NONLINEAR DS1870 abstract
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Abstract: project How to install stand-alone NXP LDMOS Models and add them to your design project How to insert NXP LDMOS and GaN Models into your design How to correctly use NXP LDMOS and GaN Models with a Thermal Node. , within MWO from now onwards, especially for non-linear devices in large-signal applications. In addition, this library contains from Version V04p0 release onwards, a new basic model for the LDMOS models, which , from the NXP LDMOS Model Library version V03p0 and older, you have to replace the old models with new ... Original
datasheet

7 pages,
516.61 Kb

NONLINEAR MODEL LDMOS microwave office Gan transistor datasheet abstract
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Abstract: LDMOS transistors is a nonlinear model that for the first time examines both electrical and thermal , Electro­Thermal Nonlinear Model for Silicon RF LDMOS FETs," 1999 IEEE MTT­S Digest, June 13­19, 1999, pp. , SG384/D SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS , RF LDMOS technology has become the industry's technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola's RF LDMOS technology is used in making high power, high ... Original
datasheet

20 pages,
182.04 Kb

MRF9180 dragon AR629 uhf microwave fet MRF374A MRF transistor MRF1550T1 AR628 High frequency MRF transistor MHPA21030 motorola MRF Curtice linear amplifier 470-860 mrf284 SG384/D SG384/D abstract
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Abstract: LdMOS, this device allows the compensation of non-linear VGS compared to the change of temperature and , LDU601C LDU601C 600W pep ­27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. · · · · · · · · · 470 - 862 MHz (28 ÷32 Volt) 30 , (See LDMOS Technology Note). (Warning: Do not exceed the specified max Iq value). *Depending of ... Original
datasheet

6 pages,
326.82 Kb

RM2005A000646 300w class ab amplifier LDMOS NONLINEAR 300w amplifier rf amplifier 100w PTF*A043002E LDU60 GR01790 600w power amplifier 300W TRANSISTOR AUDIO AMPLIFIER M2.5 torque settings PTFA043002E 600W TRANSISTOR AUDIO AMPLIFIER LDU601C LDU601C abstract
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Abstract: ® LDMOS Transistors Bias Control in Basestation RF Power Amplifiers Using Intersil's LUT-based , Introduction LDMOS transistors are used for RF Power Amplification in numerous applications from , linearity is the DC biasing of the LDMOS transistor for optimal drain current for a given power output. This , circuit of an LDMOS amplifier bias circuit is shown in Figure 1. The DC Bias on these amplifiers is set by , constant over temperature, but since the Vgs of LDMOS amplifier devices varies with temperature, some type ... Original
datasheet

7 pages,
165.23 Kb

sensor LM35 BB 7358 AN1741 7908 motorola sda 5708 200w power amplifier circuit diagram 200w power AB amplifier circuit diagram 640E6 34 AC LM35 CC AN174 AN174 abstract
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Abstract: LDMOS Transistors Bias Control in Basestation RF Power Amplifiers Using Intersil's LUT-based , Introduction Vdd LDMOS transistors are used for RF Power Amplification in numerous applications from , that linearity is the DC biasing of the LDMOS transistor for optimal drain current for a given power , simplified circuit of an LDMOS amplifier bias circuit is shown in Figure 1. The DC Bias on these amplifiers , , this Idd will be constant over temperature, but since the Vgs of LDMOS amplifier devices varies with ... Original
datasheet

7 pages,
165.45 Kb

lm35 opamp LM6142 12v DC 2A power supply circuit X96010 RF Power Transistor MRF9080 X96011 radar sensor MRF9080 LP2950 200w power amplifier circuit diagram BB 7358 640E6 lm35 sensor interfacing with adc AN174 AN174 abstract
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Abstract: difficult, if not impossible, to obtain for an RF amplifier. One can fully characterize the nonlinear , by a nonlinear transfer function represented by a Taylor expansion: VOUT = K0 + K1VIN + K2VIN² + , order. Therefore, in most cases practical nonlinear amplifiers can be described to a sufficient accuracy , , higher-order products can become important in some cases. The higher K3, K5. become, the more nonlinear is , LDMOS is in the range of microseconds.¹ So if the envelope power of a signal varies very quickly, e.g. ... Original
datasheet

10 pages,
156.37 Kb

MW41C2230 MRF5P21180 MRF21085 MAX2010 MAX2009 APP4611 predistorter digital predistortion dpd 4-611 motorola datasheet abstract
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Abstract: can account for the dynamic self­heating effects inherent in high power RF LDMOS transistors. The LDMOS MET model is an empirical large­signal, nonlinear model. The MET model can accurately represent , MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1941/D AN1941/D AN1941 AN1941 Modeling Thermal Effects in RF LDMOS Transistors Prepared by: Darin Wagner , notes. To access all Motorola RF LDMOS Model libraries, go to: http://www.motorola.com/rf/models ... Original
datasheet

14 pages,
1854.66 Kb

NONLINEAR MODEL LDMOS FET model AN1941 sweep generator MOTOROLA MRF19125 motorola amplifiers examples AN1941/D AN1941/D abstract
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Abstract: AN2657 AN2657 Application note An innovative verilog model for predicting LDMOS DC, small and large , transistors. Recently, STMicroelectronics has been strongly focused on developing new models for RF LDMOS , how to extract the model parameters for the PD54003L-E PD54003L-E device, which is a 3 W - 7.2 V - 500 MHz LDMOS , effectiveness and high performance, LDMOS devices are widely used in radio frequency applications, ranging from , following elements can be noted: Parasitic elements associated with the device Nonlinear ... Original
datasheet

18 pages,
252.78 Kb

T200 PD54003L-E PD54003L military mobility DB-54003L-175 walkie-talkie AN2657 AN2657 abstract
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Abstract: Lateral DMOS (LDMOS) transistor dies LDMOS technology is a relatively recent development. Unlike VDMOS which can be used up to about 1 GHz, LDMOS, like bipolar, is suitable for use at higher frequencies , particular performance and cost requirements, VDMOS, LDMOS or bipolar can provide the best solution. 1.1.3.1 1.1.3.3 As with VDMOS, a key parameter of an LDMOS transistor is the length of the channel , ). THE SOURCE (SUBSTRATE MATERIAL) Philips LDMOS transistors are all silicon n-channel ... Original
datasheet

13 pages,
121.91 Kb

uhf amplifier design Transistor bc 107 npn transistor Bipolar Junction Transistor npn HIGH POWER TRANSISTOR All similar transistor philips rf power RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF TRANSISTOR RF POWER TRANSISTOR Transistors high frequency Bipolar NPN transistor RF datasheet abstract
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www.datasheetarchive.com/download/61813360-596980ZC/71691.zip (NXP_RFpower_Library_Manual_MWO_20120420.pdf)
NXP 23/10/2012 57734.64 Kb ZIP 71691.zip
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www.datasheetarchive.com/download/22204674-596971ZC/50961.zip (NXP_RFpower_Library_Manual_MWO_20120420.pdf)
NXP 23/10/2012 56632.22 Kb ZIP 50961.zip
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www.datasheetarchive.com/download/15355188-596976ZC/71129.zip (NXP_RFpower_Library_Manual_MWO_20120420.pdf)
NXP 23/10/2012 56130.47 Kb ZIP 71129.zip
S-parameters and Spice Model files here. Download LDMOS L Series S-parameters and Spice Poly_Ads_non-linear for non-linear spice model library kit. Includes package layouts. C. non-linear element library. Download ziolp721b.emp to extract Zin Zout impedance of Ldmos transistor and ziogx242.emp for GaN transistor from Spice Models. These files contains
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Polyfet 23/10/2012 6.68 Kb HTM info.htm
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Polyfet 23/10/2012 4349.49 Kb ZIP polyfet_ads_nonlinear_ads2011.zip
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www.datasheetarchive.com/download/51071000-688985ZC/ganads.zip (info.htm)
Polyfet 23/10/2012 34.26 Kb ZIP ganads.zip
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Polyfet 23/10/2012 1427.45 Kb ZIP adsmodels.zip
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Polyfet 23/10/2012 1140.99 Kb ZIP misc.zip
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Polyfet 23/10/2012 56.44 Kb ZIP gan_s2p_spu.zip
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www.datasheetarchive.com/download/75248909-688981ZC/ads2005-workaround.zip (info.htm)
Polyfet 23/10/2012 328.19 Kb ZIP ads2005-workaround.zip