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LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

L7E transistor

Catalog Datasheet Results Type PDF Document Tags
Abstract: - bbS3^31 0D2MS43 0D2MS43 4-G HAPX N AMER PHILIPS/DISCRETE L.7E D BCV61 BCV61 ; 61A BCV61B BCV61B; 61C SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in applications , the two transistor crystals allows the device to be used as a current mirror and the separated emitter , QUICK REFERENCE DATA Collector-emitter voltage (open base) regarding transistor T1 vCEO max. 30 V Collector-base voltage (open emitter) regarding transistor T1 vCBO max. 30 V Collector current d.c. ic ... OCR Scan
datasheet

4 pages,
84.92 Kb

two transistor forward BCV62 BCV61C BCV61B BCV61A BCV61 bm1 transistor transistor 1kp L7E transistor 0D2MS43 0D2MS43 abstract
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Abstract: transistor base-emitter biasing network and in many other applications where tight tolerances and low voltage , bbSB^ai -D5S74CJ D5S74CJ bSfl MAPX BZV87 BZV87 N Af1ER PHILIPS/DISCRETE L7E J> _yv_ RATINGS Limiting values in , bbi^Bl DD25750 DD25750 37T HAPX Low voltage stabistors for surface mounting _N AHER PHILIPS/DISCRETE L7E P V ... OCR Scan
datasheet

3 pages,
60.24 Kb

transistor a 1707 L7E transistor BZV87 BZV87 abstract
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Abstract: b7E D - t, 1,53^31 D0E3R3S DMD N AflER PHILIPS/DISCRETE IAPX BST70A BST70A N-CHANNEL VERTICAL Û-MOS TRANSISTOR IM-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for , and 3) max. lD = 500 mA;VDS = 50V;VGS = 0to 10 V ton toff max. max. Note 1. Transistor mounted , N-channel vertical D-MOS transistor N AMER PHILIPS/DISCRETE fc>7E D BST70A BST70A 90% :tl 50ÎÏ m Fig. 2 , DDESTSfl AST - APX . BST70A BST70A 11 N AMER PHILIPS/DISCRETE L7E T> 150 p; q t- _ RDS on at Tj Fig. 8 k =-i- ... OCR Scan
datasheet

4 pages,
84.41 Kb

BST70A datasheet abstract
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Abstract: L7E D- N-channel junction field-effect transistor BFR200 BFR200 STATIC CHARACTERISTICS Tj = 25 °C unless , bbSBTBl 0055B07 0055B07 HAPX BFR200 BFR200 N-channel junction field-effect transistor N AP1ER PHILIPS/DISCRETE b7E D FEATURES • Ultra-low leakage performance Hgss max. 3 pA); important for use in highly , > N-channel junction field-effect transistor Preliminary specification BFR200 BFR200 MECHANICAL DATA Dimensions , /DISCRETE b?E ]>- N-channel junction field-effect transistor BFR200 BFR200 LIMITING VALUES In accordance with ... OCR Scan
datasheet

4 pages,
76.21 Kb

L7E transistor fet junction transistor FET 1127 BFR200 infrared burglar alarm 0055B07 0055B07 abstract
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Abstract: PHILIPS/DISCRETE L7E D- NPN general purpose transistor 2PD601 2PD601; 2PD601A 2PD601A SYMBOL PARAMETER CONDITIONS MIN. , Philips Semiconductor» - bbSBTBl ODBbOSS H7E MAPX objective specification N AMER PHILIPS/DISCRETE t7E NPN general purpose transistor 2PD601 2PD601 ; 2PD601A 2PD601A FEATURES • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59 package for general switching , transistor 2PD601 2PD601 ; 2PD601A 2PD601A N AMER PHILIPS/DISCRETE b7E D LIMITING VALUES In accordance with the Absolute ... OCR Scan
datasheet

3 pages,
76.07 Kb

2PB709 2PB709A 2PD601 2PD601A 2PD601AQ 2PD601AR 2PD601Q 2PD601S SC59 2PD601R L7E transistor K 2058 transistor transistor npn d 2058 datasheet abstract
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Abstract: - bbS3131 D0S44fi7 ASI - APX N AMER PHILIPS/DISCRETE b7E D BC868 BC868 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. , Silicon planar epitaxial transistor N AMER PHILIPS/DISCRETE b?E D BC868 BC868 200 'FE 150 100 50 10-B , 103 IC (mA) 104 1 April 1991 365 - tibSa^l 005MMT0 005MMT0 31b - APX BC868 BC868 N AI1ER PHILIPS/DISCRETE L7E D , base current. April 1991 - 1^53^31 OQEHMTl 252 «APX Silicon planar epitaxial transistor N AMER ... OCR Scan
datasheet

5 pages,
166.56 Kb

transistor marking HB sot-89 L7E transistor IEC134 BC868-25 BC868-16 BC868-10 BC868 DD24M DD24M abstract
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Abstract: - bbâB^Bl GGEMMfl? -B1 HAPX N AMER PHILIPS/DISCRETE b7E D BC868 BC868 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. , Copyrighted By Its Respective Manufacturer - bbSB'ìBl tm BAPX Silicon planar epitaxial transistor N AMER , Copyrighted By Its Respective Manufacturer - ^53^31 0024^0 31b «APX BC868 BC868 N AMER PHILIPS/DISCRETE L7E » A_ , Respective Manufacturer - bL53T31 OOEMMTl 252 BIAPX Silicon planar epitaxial transistor N AMER PHILIPS ... OCR Scan
datasheet

5 pages,
166.72 Kb

marking JY BC868-25 BC868-16 BC868-10 BC868 transistor d 364-y transistor BU 102 BC868 abstract
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Abstract: /DISCRETE L.7E D NPN 6 GHz wideband transistor BFG94 BFG94 LIMITING VALUES In accordance with the Absolute , L7E J>- NPN 6 GHz wideband transistor BFG94 BFG94 L1 = L3 = 5 |iH micro-choke. L2 = 1 turn copper wire , specification - N AMER PHILIPS/DISCRETE L.7E D ' NPN 6 GHz wideband transistor BFG94 BFG94 180° lc = 45 mA; VCE = , ]> - NPN 6 GHz wideband transistor £ BFG94 BFG94 FEATURES • High power gain • Low noise figure • Low , emitter 2 base 3 emitter 4 collector DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. ... OCR Scan
datasheet

13 pages,
350.75 Kb

transistor 669 m6879 L7E transistor BFG94 MB8789 datasheet abstract
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Abstract: /DISCRETE L7E D- NPN 5 GHz wideband transistor BFR93 BFR93 lc = 30 mA; V0E = 5 V; Tamb = 25 °C. Fig.11 Common , NPN 5 GHz wideband transistor ^ BFR93 BFR93 DESCRIPTION PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low , b?E ]>- NPN 5 GHz wideband transistor BFR93 BFR93 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL , NPN 5 GHz wideband transistor BFR93 BFR93 l_2 = L3 = 5 nH Ferroxcube choke, catalogue number 3122 108 ... OCR Scan
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7 pages,
186.11 Kb

BFT93 BFR91 BFR93 L7E transistor transistor BFR93 QS 100 NPN Transistor datasheet abstract
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Abstract: - bbSBTBl G025L03 G025L03 b?E MARX N AUER PHILIPS/DISCRETE b?E D BSS63 BSS63 HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high voltage general purpose and switching , transistor N APIER PHILIPS/DISCRETE b7E ]> BSS63 BSS63 100 hFE 75 50 25 100 fT (MHz) 75 50 25 , AMER PHILIPS/DISCRETE L7E BSS63 BSS63 7 Z 7 766 1 .1 200 Fig. 5 Typical values collector-base currents as ... OCR Scan
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5 pages,
98.83 Kb

TRANSISTOR b72 L7E transistor BSS63 transistor 1548 transistor 1548 b transistor 1547 b G025L03 G025L03 abstract
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