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Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

L7E transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: transistor N AMER PHILIPS/DISCRETE L7E D Transition frequency at f = 35 MHz lC = 10mA;VcE = 5V Collectctr , ï»¿â  bbS3^31 0D2MS43 4ÃG HAPX N AMER PHILIPS/DISCRETE L.7E D BCV61 ; 61A BCV61B; 61C SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in , the two transistor crystals allows the device to be used as a current mirror and the separated emitter , . QUICK REFERENCE DATA Collector-emitter voltage (open base) regarding transistor T1 vCEO max. 30 V -
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BCV62 BCV61A BCV61C transistor 1kp bm1 transistor marking code ES3 1Kp SOT143 7Z85014 0DSHS144 00245M
Abstract: stabilization of transistor base-emitter biasing network and in many other applications where tight tolerances , Respective Manufacturer â  bbSB^ai â¡D5S74CJ bSfl MAPX BZV87 N Af1ER PHILIPS/DISCRETE L7E J> _yv_ , L7E P V BZV87 ip (mA) 1 1 1 -
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transistor a 1707 DD25750
Abstract: , temperature stabilization of transistor base-emitter biasing network and in many other applications where , BZV87 N Af1ER p H I L I PS/DISCRETE L7E J > _y . v _ RATING S Lim iting , voltage stabistors fo r surface mounting N AMER PHILIPS/ DIS CRET E L7E P V Fig. 2 Forward -
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S3T31
Abstract: S/ DI SCR ETE L.7E J> NPN 5 GHz wideband transistor BFR106 THERMAL RESISTANCE SYMBOL , transistor L7E D Product specification BFR106 UBB773 8 »T (GHz) 6 4 2 â' o 40 , _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23 envelope , NPN 5 GHz wideband transistor November 1992 1122 b?E D Product specification BFR106 -
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D02S20D
Abstract: Product specification - N ANER PHILIPS/DISCRETE L.7E D NPN 6 GHz wideband transistor BFG94 LIMITING , Product specification - N AMER PHILIPS/DISCRETE L7E J>- NPN 6 GHz wideband transistor BFG94 L1 = L3 = 5 , specification - N AMER PHILIPS/DISCRETE L.7E D ' NPN 6 GHz wideband transistor BFG94 180° lc = 45 mA; VCE = , b7E ]> â'" NPN 6 GHz wideband transistor £ BFG94 FEATURES â'¢ High power gain â'¢ Low noise figure , PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector DESCRIPTION NPN transistor mounted in a -
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MB8789 073 apx m6879 transistor 669
Abstract: ï»¿â  bts3T3i oo23bia an â  APX N AUER PHILIPS/DISCRETE b7E D BF992 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f , Copyrighted By Its Respective Manufacturer bti53T31 n023b21 &03 m APX BF992 N AI1ER PHILIPS/DISCRETE L7E D , APX Silicon n-channel dual gate MOS-F ET N AUER PHILIPS/DISCRETE L.7E D BF992 A_ I â'¢-s9fs -
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bf992 m92 diode marking code YF 200MH S3131
Abstract: transistor N AMER PHILIPS/DISCRETE L7E D BF570 1500 fT (MHz) 1000 I , â I bbS3T31 DÃEMbST 7ET «APX N AMER PHILIPS/DISCRETE b7E » BF570 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. preamplifiers of TV receivers in combination with surface acoustic wave filters. QUICK REFERENCE DATA Collector-base voltage (open emitter) VCBO max. 40 V Collector-emitter voltage (open base) vCEO -
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53T31 50S2//1
Abstract: /DISCRETE t7E NPN general purpose transistor 2PD601 ; 2PD601A FEATURES â'¢ High DC current gain â'¢ Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59 package for general switching , general purpose transistor 2PD601 ; 2PD601A N AMER PHILIPS/DISCRETE b7E D LIMITING VALUES In accordance , Semiconductors â"¢ DD5fc.0S7 2MS â  APX objective specification - N AMER PHILIPS/DISCRETE L7E D- NPN general purpose transistor 2PD601; 2PD601A SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 'CBO collector-base -
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2PB709 2PB709A 2PD601Q 2PD601R 2PD601S 2PD601AQ transistor npn d 2058 K 2058 transistor SC59
Abstract: PHILIPS/DISCRETE L7E D- N-channel junction field-effect transistor BFR200 STATIC CHARACTERISTICS Tj = , bbSBTBl 0055B07 HAPX BFR200 N-channel junction field-effect transistor N AP1ER PHILIPS/DISCRETE b7E D FEATURES â'¢ Ultra-low leakage performance Hgss max. 3 pA); important for use in highly , .7E T> N-channel junction field-effect transistor Preliminary specification BFR200 MECHANICAL DATA , /DISCRETE b?E ]>- N-channel junction field-effect transistor BFR200 LIMITING VALUES In accordance with -
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infrared burglar alarm FET 1127 fet junction transistor 0D255D 0D2521Q
Abstract: ï»¿â  bbSBTBl G025L03 b?E MARX N AUER PHILIPS/DISCRETE b?E D BSS63 HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high voltage general purpose and , transistor N APIER PHILIPS/DISCRETE b7E ]> BSS63 100 hFE 75 50 25 100 fT (MHz) 75 50 25 , _N AMER PHILIPS/DISCRETE L7E BSS63 7 Z 7 766 1 .1 200 Fig. 5 Typical values collector-base -
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transistor 1547 b transistor 1548 b transistor 1548 210EC TRANSISTOR b72 7Z59855
Abstract: â I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ] > y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA Collector-base voltage (open emitter) -VC BO max. 160 V Collector-emitter voltage (open base) -VC EO max. 150 V Collector current - 'c max. 500 mA Total power dissipation up to -
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Abstract: ï»¿â  ^53^31 4L1 â  APX N AMER PHILIPS/DISCRETE b?E D BF998 Silicon n-channel dual gate MOS-FET FEATURES â'¢ Short channel transistor with high ratio |YfS 1/Cis â'¢ Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature , AP1ER PHILIPS/DISCRETE L7E D Silicon n-channel dual gate MOS-FET BF998 lyfsl (mS) MCB351 nâ'"r VG2-S , Semiconductors Product specification - N AflER PHILIPS/DISCRETE L.7E D - Silicon n-channel dual gate MOS-FET -
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PHILIPS MOSFET MARKING TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate
Abstract: ï»¿â  ^53131 00BM535 3G4 HAPX N AUER PHILIPS/DISCRETE L7E T> BCV26 BCV46 SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic SOT23 envelope N-P-N complement is BCV27/47. QUICK REFERENCE DATA Collector-emitter voltage (open base) Collector-base voltage (open emitter) Collector current DC current gain -IC= 1 mA;-VCF = 5 V -IC = 10 mA;-VCE = 5 V -IQ = 100 mA;-VCE = 5 V Junction temperature Total power dissipation up to Tamb = 25 Collector-emitter -
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MAX4080 7Z963SS
Abstract: â  bbS3T31 0025675 L20 H A P X N AUER PHILIPS/DISCRETE PMBT5088 L7E D 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic SOT-23 envelope intended for low-noise input stages in audio equipment, when using SMD technology. QUICK REFERENCE DATA Collector-emitter voltage (open base) VCEO max. 30 V Collector-base voltage (open emitter) VCBO , transistor PMBT5088 b7E J > N AUER PHILIPS/DISCRETE CHARACTERISTICS Tj = 25 °C unless -
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5B smd transistor data TRANSISTOR SMD MARKING CODE 5b 5B SMD TRANSISTOR TRANSISTOR D 1853 MBB012
Abstract: transistor BSP124 N AflER PHILIPS/DISCRETE L.7E D T, = 25 °C. Fig.6 Typical output characteristics , mode vertical D-MOS transistor BSP124 FEATURES â'¢ High-speed switching â'¢ No secondary breakdown. DESCRIPTION N-channel depletion mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a , transistor BSP124 N AUER PHILIPS/DISCRETE b7E D LIMITING VALUES In accordance with the Absolute Maximum , â  APX Product specification N-channel depletion mode vertical D-MOS transistor BSP124 N AUER -
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MRC230 MRC229 MRC224 MRC233
Abstract: ï»¿â  D025fci0ô ISM «APX N AUER PHILIPS/DISCRETE b?E D BSS64 HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high-voltage general purpose and switching applications. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. 120 V Collector-emitter , /DISCRETE L7E D V_ RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 -
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transistor d 1556 d 1556 transistor 7Z77661
Abstract: depletion mode vertical D-MOS transistor N AUER PHILIPS/DISCRETE L7E D LIMITING VALUES In accordance , ! depletion mode vertical D-MOS transistor BSP124 N AMER PHILIPS/DISCRETE b7E D QUICK REFERENCE DATA , gate-source voltage open drain N-channel depletion mode vertical D-MOS transistor in a SOT223 envelope , D-MOS transistor BSP124 - N AUER PHILIPS/DISCRETE b7E D Fig , T â  APX Product specification N-channel depletion mode vertical D-MOS transistor -
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Abstract: I bbS3131 [][]P3bP3 bat. â  APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF television tuners, FM tuners with a 12 volt supply voltage. The device is also suitable for use in profess­ ional communication equipment. The device is protected against excessive -
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Marking G1s
Abstract: epitaxial transistor N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B; 61C L7E D* Transition frequency , SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for , matching. Special interconnection o f the tw o transistor crystals allows the device to be used as a , (open base) regarding transistor T1 v CEO max. 30 V Collector-base voltage (open emitter) regarding transistor T1 v CBO max. 30 V Collector current d.c. 'c max. 100 m A 200 m -
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00E4S43 7Z87629
Abstract: ï»¿â  â¡ â¡25l444 323 «APX N AMER PHILIPS/DISCRETE L7E ]> BRY62 SILICON P-N-P-N PLANAR , ) Transistor 1 (T1) Collector-base voltage (open emitter) vCBO max. 70 V Collector-emitter voltage (Rgg = 10 , ) max. 175 mA Emitter current (peak value) tp= 10 jus; 5 = 1% 'em max. 2,5 A Transistor 2 (T2 , when the transistor Is in cut-off condition, with a collector supply voltage of 160 V and a series , Circuit diagram. CHARACTERISTICS Tj = 25 °C unless otherwise specified. Transistor 1 (TR1 -
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Thyristor mw 134 transistor KIA-70 Emitter Turn-Off thyristor scs thyristor TRANSISTOR 1383 LT99 0D25MM7
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