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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil

L7E transistor

Catalog Datasheet MFG & Type PDF Document Tags

L7E transistor

Abstract: transistor 1kp transistor N AMER PHILIPS/DISCRETE L7E D Transition frequency at f = 35 MHz lC = 10mA;VcE = 5V Collectctr , ï»¿â  bbS3^31 0D2MS43 4ÃG HAPX N AMER PHILIPS/DISCRETE L.7E D BCV61 ; 61A BCV61B; 61C SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in , the two transistor crystals allows the device to be used as a current mirror and the separated emitter , . QUICK REFERENCE DATA Collector-emitter voltage (open base) regarding transistor T1 vCEO max. 30 V
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BCV62 BCV61A BCV61C L7E transistor transistor 1kp bm1 transistor marking code ES3 7Z85014 0DSHS144 00245M

L7E transistor

Abstract: BZV87 stabilization of transistor base-emitter biasing network and in many other applications where tight tolerances , Respective Manufacturer â  bbSB^ai â¡D5S74CJ bSfl MAPX BZV87 N Af1ER PHILIPS/DISCRETE L7E J> _yv_ , L7E P V BZV87 ip (mA) 1 1 1
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transistor a 1707 DD25750
Abstract: , temperature stabilization of transistor base-emitter biasing network and in many other applications where , BZV87 N Af1ER p H I L I PS/DISCRETE L7E J > _y . v _ RATING S Lim iting , voltage stabistors fo r surface mounting N AMER PHILIPS/ DIS CRET E L7E P V Fig. 2 Forward -
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S3T31
Abstract: S/ DI SCR ETE L.7E J> NPN 5 GHz wideband transistor BFR106 THERMAL RESISTANCE SYMBOL , transistor L7E D Product specification BFR106 UBB773 8 »T (GHz) 6 4 2 â' o 40 , _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23 envelope , NPN 5 GHz wideband transistor November 1992 1122 b?E D Product specification BFR106 -
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D02S20D

MB8789

Abstract: BFG94 Product specification - N ANER PHILIPS/DISCRETE L.7E D NPN 6 GHz wideband transistor BFG94 LIMITING , Product specification - N AMER PHILIPS/DISCRETE L7E J>- NPN 6 GHz wideband transistor BFG94 L1 = L3 = 5 , specification - N AMER PHILIPS/DISCRETE L.7E D ' NPN 6 GHz wideband transistor BFG94 180° lc = 45 mA; VCE = , b7E ]> â'" NPN 6 GHz wideband transistor £ BFG94 FEATURES â'¢ High power gain â'¢ Low noise figure , PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector DESCRIPTION NPN transistor mounted in a
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MB8789 m6879 073 apx transistor 669

diode marking code YF

Abstract: BF992 ï»¿â  bts3T3i oo23bia an â  APX N AUER PHILIPS/DISCRETE b7E D BF992 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f , Copyrighted By Its Respective Manufacturer bti53T31 n023b21 &03 m APX BF992 N AI1ER PHILIPS/DISCRETE L7E D , APX Silicon n-channel dual gate MOS-F ET N AUER PHILIPS/DISCRETE L.7E D BF992 A_ I â'¢-s9fs
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diode marking code YF bf992 m92 200MH S3131

BF570

Abstract: L7E transistor transistor N AMER PHILIPS/DISCRETE L7E D BF570 1500 fT (MHz) 1000 I , â I bbS3T31 DÃEMbST 7ET «APX N AMER PHILIPS/DISCRETE b7E » BF570 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. preamplifiers of TV receivers in combination with surface acoustic wave filters. QUICK REFERENCE DATA Collector-base voltage (open emitter) VCBO max. 40 V Collector-emitter voltage (open base) vCEO
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53T31 50S2//1

transistor npn d 2058

Abstract: K 2058 transistor /DISCRETE t7E NPN general purpose transistor 2PD601 ; 2PD601A FEATURES â'¢ High DC current gain â'¢ Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59 package for general switching , general purpose transistor 2PD601 ; 2PD601A N AMER PHILIPS/DISCRETE b7E D LIMITING VALUES In accordance , Semiconductors â"¢ DD5fc.0S7 2MS â  APX objective specification - N AMER PHILIPS/DISCRETE L7E D- NPN general purpose transistor 2PD601; 2PD601A SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 'CBO collector-base
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2PB709 2PB709A 2PD601Q 2PD601R 2PD601S 2PD601AQ transistor npn d 2058 K 2058 transistor

infrared burglar alarm

Abstract: BFR200 PHILIPS/DISCRETE L7E D- N-channel junction field-effect transistor BFR200 STATIC CHARACTERISTICS Tj = , bbSBTBl 0055B07 HAPX BFR200 N-channel junction field-effect transistor N AP1ER PHILIPS/DISCRETE b7E D FEATURES â'¢ Ultra-low leakage performance Hgss max. 3 pA); important for use in highly , .7E T> N-channel junction field-effect transistor Preliminary specification BFR200 MECHANICAL DATA , /DISCRETE b?E ]>- N-channel junction field-effect transistor BFR200 LIMITING VALUES In accordance with
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infrared burglar alarm FET 1127 fet junction transistor 0D255D 0D2521Q

transistor 1547 b

Abstract: transistor 1548 b ï»¿â  bbSBTBl G025L03 b?E MARX N AUER PHILIPS/DISCRETE b?E D BSS63 HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high voltage general purpose and , transistor N APIER PHILIPS/DISCRETE b7E ]> BSS63 100 hFE 75 50 25 100 fT (MHz) 75 50 25 , _N AMER PHILIPS/DISCRETE L7E BSS63 7 Z 7 766 1 .1 200 Fig. 5 Typical values collector-base
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transistor 1547 b transistor 1548 b transistor 1548 210EC TRANSISTOR b72 7Z59855

L7E transistor

Abstract: â I bbS3^31 33T H A P X N AUER PHILIPS/DISCRETE PMBT5401 L7E ] > y v SILICON P-N-P HIGH-VOLTAGE TRANSISTOR P-N-P high-voltage small-signal transistor for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope. QUICK REFERENCE DATA Collector-base voltage (open emitter) -VC BO max. 160 V Collector-emitter voltage (open base) -VC EO max. 150 V Collector current - 'c max. 500 mA Total power dissipation up to
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PHILIPS MOSFET MARKING

Abstract: BF998 ï»¿â  ^53^31 4L1 â  APX N AMER PHILIPS/DISCRETE b?E D BF998 Silicon n-channel dual gate MOS-FET FEATURES â'¢ Short channel transistor with high ratio |YfS 1/Cis â'¢ Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature , AP1ER PHILIPS/DISCRETE L7E D Silicon n-channel dual gate MOS-FET BF998 lyfsl (mS) MCB351 nâ'"r VG2-S , Semiconductors Product specification - N AflER PHILIPS/DISCRETE L.7E D - Silicon n-channel dual gate MOS-FET
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PHILIPS MOSFET MARKING TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate

MAX4080

Abstract: BCV26 ï»¿â  ^53131 00BM535 3G4 HAPX N AUER PHILIPS/DISCRETE L7E T> BCV26 BCV46 SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic SOT23 envelope N-P-N complement is BCV27/47. QUICK REFERENCE DATA Collector-emitter voltage (open base) Collector-base voltage (open emitter) Collector current DC current gain -IC= 1 mA;-VCF = 5 V -IC = 10 mA;-VCE = 5 V -IQ = 100 mA;-VCE = 5 V Junction temperature Total power dissipation up to Tamb = 25 Collector-emitter
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MAX4080 7Z963SS

5B smd transistor data

Abstract: TRANSISTOR SMD MARKING CODE 5b â  bbS3T31 0025675 L20 H A P X N AUER PHILIPS/DISCRETE PMBT5088 L7E D 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic SOT-23 envelope intended for low-noise input stages in audio equipment, when using SMD technology. QUICK REFERENCE DATA Collector-emitter voltage (open base) VCEO max. 30 V Collector-base voltage (open emitter) VCBO , transistor PMBT5088 b7E J > N AUER PHILIPS/DISCRETE CHARACTERISTICS Tj = 25 °C unless
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5B smd transistor data TRANSISTOR SMD MARKING CODE 5b 5B SMD TRANSISTOR TRANSISTOR D 1853 MBB012

BSP124

Abstract: MRC229 transistor BSP124 N AflER PHILIPS/DISCRETE L.7E D T, = 25 °C. Fig.6 Typical output characteristics , mode vertical D-MOS transistor BSP124 FEATURES â'¢ High-speed switching â'¢ No secondary breakdown. DESCRIPTION N-channel depletion mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a , transistor BSP124 N AUER PHILIPS/DISCRETE b7E D LIMITING VALUES In accordance with the Absolute Maximum , â  APX Product specification N-channel depletion mode vertical D-MOS transistor BSP124 N AUER
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MRC230 MRC229 MRC224 MRC233

transistor d 1556

Abstract: d 1556 transistor ï»¿â  D025fci0ô ISM «APX N AUER PHILIPS/DISCRETE b?E D BSS64 HIGH VOLTAGE N-P-N TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high-voltage general purpose and switching applications. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. 120 V Collector-emitter , /DISCRETE L7E D V_ RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134
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transistor d 1556 d 1556 transistor 7Z77661
Abstract: depletion mode vertical D-MOS transistor N AUER PHILIPS/DISCRETE L7E D LIMITING VALUES In accordance , ! depletion mode vertical D-MOS transistor BSP124 N AMER PHILIPS/DISCRETE b7E D QUICK REFERENCE DATA , gate-source voltage open drain N-channel depletion mode vertical D-MOS transistor in a SOT223 envelope , D-MOS transistor BSP124 - N AUER PHILIPS/DISCRETE b7E D Fig , T â  APX Product specification N-channel depletion mode vertical D-MOS transistor -
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Marking G1s

Abstract: I bbS3131 [][]P3bP3 bat. â  APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF television tuners, FM tuners with a 12 volt supply voltage. The device is also suitable for use in profess­ ional communication equipment. The device is protected against excessive
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Marking G1s
Abstract: epitaxial transistor N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B; 61C L7E D* Transition frequency , SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for , matching. Special interconnection o f the tw o transistor crystals allows the device to be used as a , (open base) regarding transistor T1 v CEO max. 30 V Collector-base voltage (open emitter) regarding transistor T1 v CBO max. 30 V Collector current d.c. 'c max. 100 m A 200 m -
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00E4S43 7Z87629

Thyristor mw 134

Abstract: transistor KIA-70 ï»¿â  â¡ â¡25l444 323 «APX N AMER PHILIPS/DISCRETE L7E ]> BRY62 SILICON P-N-P-N PLANAR , ) Transistor 1 (T1) Collector-base voltage (open emitter) vCBO max. 70 V Collector-emitter voltage (Rgg = 10 , ) max. 175 mA Emitter current (peak value) tp= 10 jus; 5 = 1% 'em max. 2,5 A Transistor 2 (T2 , when the transistor Is in cut-off condition, with a collector supply voltage of 160 V and a series , Circuit diagram. CHARACTERISTICS Tj = 25 °C unless otherwise specified. Transistor 1 (TR1
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Thyristor mw 134 transistor KIA-70 Emitter Turn-Off thyristor scs thyristor TRANSISTOR 1383 LT99 0D25MM7
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