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FJPF13007H1TTU Fairchild Semiconductor Corporation POWER TRANSISTOR ri Buy
FJPF2145TU Fairchild Semiconductor Corporation POWER TRANSISTOR ri Buy
KSH210TM Fairchild Semiconductor Corporation POWER TRANSISTOR ri Buy

L7E transistor

Catalog Datasheet Type PDF Document Tags
Abstract: - bbS3^31 0D2MS43 0D2MS43 4-G HAPX N AMER PHILIPS/DISCRETE L.7E D BCV61 BCV61 ; 61A BCV61B BCV61B; 61C SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in applications , the two transistor crystals allows the device to be used as a current mirror and the separated emitter , QUICK REFERENCE DATA Collector-emitter voltage (open base) regarding transistor T1 vCEO max. 30 V Collector-base voltage (open emitter) regarding transistor T1 vCBO max. 30 V Collector current d.c. ic ... OCR Scan
datasheet

4 pages,
84.92 Kb

two transistor forward BCV61 BCV61A BCV61B BCV61C BCV62 1Kp SOT143 bm1 transistor marking code ES3 transistor 1kp L7E transistor 0D2MS43 0D2MS43 abstract
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Abstract: transistor base-emitter biasing network and in many other applications where tight tolerances and low voltage , bbSB^ai -D5S74CJ D5S74CJ bSfl MAPX BZV87 BZV87 N Af1ER PHILIPS/DISCRETE L7E J> _yv_ RATINGS Limiting values in , bbi^Bl DD25750 DD25750 37T HAPX Low voltage stabistors for surface mounting _N AHER PHILIPS/DISCRETE L7E P V ... OCR Scan
datasheet

3 pages,
60.24 Kb

transistor a 1707 L7E transistor BZV87 BZV87 abstract
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Abstract: b7E D - t, 1,53^31 D0E3R3S DMD N AflER PHILIPS/DISCRETE IAPX BST70A BST70A N-CHANNEL VERTICAL Û-MOS TRANSISTOR IM-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for , and 3) max. lD = 500 mA;VDS = 50V;VGS = 0to 10 V ton toff max. max. Note 1. Transistor mounted , N-channel vertical D-MOS transistor N AMER PHILIPS/DISCRETE fc>7E D BST70A BST70A 90% :tl 50ÎÏ m Fig. 2 , DDESTSfl AST - APX . BST70A BST70A 11 N AMER PHILIPS/DISCRETE L7E T> 150 p; q t- _ RDS on at Tj Fig. 8 k =-i- ... OCR Scan
datasheet

4 pages,
84.41 Kb

BST70A datasheet abstract
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Abstract: L7E D- N-channel junction field-effect transistor BFR200 BFR200 STATIC CHARACTERISTICS Tj = 25 °C unless , bbSBTBl 0055B07 0055B07 HAPX BFR200 BFR200 N-channel junction field-effect transistor N AP1ER PHILIPS/DISCRETE b7E D FEATURES • Ultra-low leakage performance Hgss max. 3 pA); important for use in highly , > N-channel junction field-effect transistor Preliminary specification BFR200 BFR200 MECHANICAL DATA Dimensions , /DISCRETE b?E ]>- N-channel junction field-effect transistor BFR200 BFR200 LIMITING VALUES In accordance with ... OCR Scan
datasheet

4 pages,
76.21 Kb

L7E transistor fet junction transistor FET 1127 BFR200 infrared burglar alarm 0055B07 0055B07 abstract
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Abstract: PHILIPS/DISCRETE L7E D- NPN general purpose transistor 2PD601 2PD601; 2PD601A 2PD601A SYMBOL PARAMETER CONDITIONS MIN. , Philips Semiconductor» - bbSBTBl ODBbOSS H7E MAPX objective specification N AMER PHILIPS/DISCRETE t7E NPN general purpose transistor 2PD601 2PD601 ; 2PD601A 2PD601A FEATURES • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59 package for general switching , transistor 2PD601 2PD601 ; 2PD601A 2PD601A N AMER PHILIPS/DISCRETE b7E D LIMITING VALUES In accordance with the Absolute ... OCR Scan
datasheet

3 pages,
76.07 Kb

2PB709 2PB709A 2PD601 2PD601A 2PD601AQ 2PD601AR 2PD601Q 2PD601S SC59 2PD601R L7E transistor K 2058 transistor transistor npn d 2058 datasheet abstract
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Abstract: - bbS3131 D0S44fi7 ASI - APX N AMER PHILIPS/DISCRETE b7E D BC868 BC868 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. , Silicon planar epitaxial transistor N AMER PHILIPS/DISCRETE b?E D BC868 BC868 200 'FE 150 100 50 10-B , 103 IC (mA) 104 1 April 1991 365 - tibSa^l 005MMT0 005MMT0 31b - APX BC868 BC868 N AI1ER PHILIPS/DISCRETE L7E D , base current. April 1991 - 1^53^31 OQEHMTl 252 «APX Silicon planar epitaxial transistor N AMER ... OCR Scan
datasheet

5 pages,
166.56 Kb

transistor marking HB sot-89 L7E transistor IEC134 BC868-25 BC868-16 BC868-10 BC868 DD24M DD24M abstract
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Abstract: - bbâB^Bl GGEMMfl? -B1 HAPX N AMER PHILIPS/DISCRETE b7E D BC868 BC868 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. , Copyrighted By Its Respective Manufacturer - bbSB'ìBl tm BAPX Silicon planar epitaxial transistor N AMER , Copyrighted By Its Respective Manufacturer - ^53^31 0024^0 31b «APX BC868 BC868 N AMER PHILIPS/DISCRETE L7E » A_ , Respective Manufacturer - bL53T31 OOEMMTl 252 BIAPX Silicon planar epitaxial transistor N AMER PHILIPS ... OCR Scan
datasheet

5 pages,
166.72 Kb

marking JY BC868-25 BC868-16 BC868-10 BC868 transistor BU 102 transistor d 364-y BC868 abstract
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Abstract: /DISCRETE L.7E D NPN 6 GHz wideband transistor BFG94 BFG94 LIMITING VALUES In accordance with the Absolute , L7E J>- NPN 6 GHz wideband transistor BFG94 BFG94 L1 = L3 = 5 |iH micro-choke. L2 = 1 turn copper wire , specification - N AMER PHILIPS/DISCRETE L.7E D ' NPN 6 GHz wideband transistor BFG94 BFG94 180° lc = 45 mA; VCE = , ]> - NPN 6 GHz wideband transistor £ BFG94 BFG94 FEATURES • High power gain • Low noise figure • Low , emitter 2 base 3 emitter 4 collector DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. ... OCR Scan
datasheet

13 pages,
350.75 Kb

transistor 669 m6879 L7E transistor BFG94 MB8789 datasheet abstract
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Abstract: /DISCRETE L7E D- NPN 5 GHz wideband transistor BFR93 BFR93 lc = 30 mA; V0E = 5 V; Tamb = 25 °C. Fig.11 Common , NPN 5 GHz wideband transistor ^ BFR93 BFR93 DESCRIPTION PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low , b?E ]>- NPN 5 GHz wideband transistor BFR93 BFR93 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL , NPN 5 GHz wideband transistor BFR93 BFR93 l_2 = L3 = 5 nH Ferroxcube choke, catalogue number 3122 108 ... OCR Scan
datasheet

7 pages,
186.11 Kb

BFT93 BFR91 NPN 6 GHz Wideband Transistor BFR91 BFR93 L7E transistor transistor BFR93 QS 100 NPN Transistor datasheet abstract
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Abstract: - bbSBTBl G025L03 G025L03 b?E MARX N AUER PHILIPS/DISCRETE b?E D BSS63 BSS63 HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high voltage general purpose and switching , transistor N APIER PHILIPS/DISCRETE b7E ]> BSS63 BSS63 100 hFE 75 50 25 100 fT (MHz) 75 50 25 , AMER PHILIPS/DISCRETE L7E BSS63 BSS63 7 Z 7 766 1 .1 200 Fig. 5 Typical values collector-base currents as ... OCR Scan
datasheet

5 pages,
98.83 Kb

TRANSISTOR b72 L7E transistor BSS63 transistor 1548 transistor 1548 b transistor 1547 b G025L03 G025L03 abstract
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