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L7E transistor

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Abstract: transistor N AMER PHILIPS/DISCRETE L7E D Transition frequency at f = 35 MHz lC = 10mA;VcE = 5V Collectctr , ■ bbS3^31 0D2MS43 0D2MS43 4ÖG HAPX N AMER PHILIPS/DISCRETE L.7E D BCV61 BCV61 ; 61A BCV61B BCV61B; 61C SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in , the two transistor crystals allows the device to be used as a current mirror and the separated emitter , . QUICK REFERENCE DATA Collector-emitter voltage (open base) regarding transistor T1 vCEO max. 30 V ... OCR Scan
datasheet

4 pages,
84.92 Kb

two transistor forward BCV61 BCV61A BCV61B BCV61C BCV62 1Kp SOT143 marking code ES3 bm1 transistor transistor 1kp L7E transistor 0D2MS43 TEXT
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Abstract: stabilization of transistor base-emitter biasing network and in many other applications where tight tolerances , Respective Manufacturer ■ bbSB^ai □D5S74CJ D5S74CJ bSfl MAPX BZV87 BZV87 N Af1ER PHILIPS/DISCRETE L7E J> _yv_ , L7E P V BZV87 BZV87 ip (mA) 1 1 1 ... OCR Scan
datasheet

3 pages,
60.24 Kb

transistor a 1707 L7E transistor BZV87 TEXT
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Abstract: , temperature stabilization of transistor base-emitter biasing network and in many other applications where , BZV87 BZV87 N Af1ER p H I L I PS/DISCRETE L7E J > _y . v _ RATING S Lim iting , voltage stabistors fo r surface mounting N AMER PHILIPS/ DIS CRET E L7E P V Fig. 2 Forward ... OCR Scan
datasheet

3 pages,
74.18 Kb

BZV87 TEXT
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Abstract: S/ DI SCR ETE L.7E J> NPN 5 GHz wideband transistor BFR106 BFR106 THERMAL RESISTANCE SYMBOL , transistor L7E D Product specification BFR106 BFR106 UBB773 UBB773 8 »T (GHz) 6 4 2 ” o 40 , _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23 envelope , NPN 5 GHz wideband transistor November 1992 1122 b?E D Product specification BFR106 BFR106 ... OCR Scan
datasheet

7 pages,
285.76 Kb

D02S20D TEXT
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Abstract: Product specification - N ANER PHILIPS/DISCRETE L.7E D NPN 6 GHz wideband transistor BFG94 BFG94 LIMITING , Product specification - N AMER PHILIPS/DISCRETE L7E J>- NPN 6 GHz wideband transistor BFG94 BFG94 L1 = L3 = 5 , specification - N AMER PHILIPS/DISCRETE L.7E D ' NPN 6 GHz wideband transistor BFG94 BFG94 180° lc = 45 mA; VCE = , b7E ]> — NPN 6 GHz wideband transistor £ BFG94 BFG94 FEATURES • High power gain • Low noise figure , PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector DESCRIPTION NPN transistor mounted in a ... OCR Scan
datasheet

13 pages,
350.75 Kb

transistor 669 m6879 L7E transistor BFG94 MB8789 TEXT
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Abstract: ■ bts3T3i oo23bia an ■ APX N AUER PHILIPS/DISCRETE b7E D BF992 BF992 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f , Copyrighted By Its Respective Manufacturer bti53T31 n023b21 &03 m APX BF992 BF992 N AI1ER PHILIPS/DISCRETE L7E D , APX Silicon n-channel dual gate MOS-F ET N AUER PHILIPS/DISCRETE L.7E D BF992 BF992 A_ I •-s9fs ... OCR Scan
datasheet

5 pages,
116.8 Kb

diode marking code YF BF992 TEXT
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Abstract: transistor N AMER PHILIPS/DISCRETE L7E D BF570 BF570 1500 fT (MHz) 1000 I , ■I bbS3T31 DÜEMbST 7ET «APX N AMER PHILIPS/DISCRETE b7E » BF570 BF570 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. preamplifiers of TV receivers in combination with surface acoustic wave filters. QUICK REFERENCE DATA Collector-base voltage (open emitter) VCBO max. 40 V Collector-emitter voltage (open base) vCEO ... OCR Scan
datasheet

4 pages,
75.35 Kb

L7E transistor BF570 TEXT
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Abstract: /DISCRETE t7E NPN general purpose transistor 2PD601 2PD601 ; 2PD601A 2PD601A FEATURES • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59 package for general switching , general purpose transistor 2PD601 2PD601 ; 2PD601A 2PD601A N AMER PHILIPS/DISCRETE b7E D LIMITING VALUES In accordance , Semiconductors ™ DD5fc.0S7 2MS ■ APX objective specification - N AMER PHILIPS/DISCRETE L7E D- NPN general purpose transistor 2PD601 2PD601; 2PD601A 2PD601A SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 'CBO collector-base ... OCR Scan
datasheet

3 pages,
76.07 Kb

2PB709 2PB709A 2PD601 2PD601A 2PD601AQ 2PD601AR 2PD601Q 2PD601S SC59 L7E transistor 2PD601R K 2058 transistor transistor npn d 2058 TEXT
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Abstract: PHILIPS/DISCRETE L7E D- N-channel junction field-effect transistor BFR200 BFR200 STATIC CHARACTERISTICS Tj = , bbSBTBl 0055B07 0055B07 HAPX BFR200 BFR200 N-channel junction field-effect transistor N AP1ER PHILIPS/DISCRETE b7E D FEATURES • Ultra-low leakage performance Hgss max. 3 pA); important for use in highly , .7E T> N-channel junction field-effect transistor Preliminary specification BFR200 BFR200 MECHANICAL DATA , /DISCRETE b?E ]>- N-channel junction field-effect transistor BFR200 BFR200 LIMITING VALUES In accordance with ... OCR Scan
datasheet

4 pages,
76.21 Kb

L7E transistor fet junction transistor FET 1127 BFR200 infrared burglar alarm 0055B07 TEXT
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Abstract: ■ bbSBTBl G025L03 G025L03 b?E MARX N AUER PHILIPS/DISCRETE b?E D BSS63 BSS63 HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a microminiature plastic envelope intended for application in thick and thin-film circuits. This transistor is intended for high voltage general purpose and , transistor N APIER PHILIPS/DISCRETE b7E ]> BSS63 BSS63 100 hFE 75 50 25 100 fT (MHz) 75 50 25 , _N AMER PHILIPS/DISCRETE L7E BSS63 BSS63 7 Z 7 766 1 .1 200 Fig. 5 Typical values collector-base ... OCR Scan
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5 pages,
98.83 Kb

TRANSISTOR b72 L7E transistor BSS63 transistor 1548 transistor 1548 b transistor 1547 b G025L03 TEXT
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Archived Files

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KyteLabs 11/06/2002 444.92 Kb ZIP an1858sw.zip