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Part : BS2316L-24-B Supplier : International Components Manufacturer : Future Electronics Stock : - Best Price : $1.79 Price Each : $1.90
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Part : G8032L24B-RSR Supplier : Mechatronics Manufacturer : PUI Stock : 40 Best Price : $8.69 Price Each : $10.39
Part : SL24B Supplier : Good-Ark Manufacturer : Chip1Stop Stock : 6,000 Best Price : $0.1484 Price Each : $0.1706
Part : DRTL24B06R Supplier : Crydom Manufacturer : element14 Asia-Pacific Stock : 3 Best Price : $65.80 Price Each : $69.1120
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L24b

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 127.25 MA 2,5/5D2.2CPE 0400 106.01 MA 2,5/5.SNB-CPE MA 2,5/5.CPE.1-L24B 0400 113.27 MA 2,5/5.2CPE.1-L24B 0400 115.21 MA2,5/5D2.2CPE.1-L24B 0400 121.27 MA2,5/5 , blocks with 2 independent levels. MA 2,5/5D2-2CPE.1-L24BD : double deck blocks with 24 V - 4,8 mA , 2,5/5-2CPE.1-L24BD. : block equipped with 24 V - 4,8 mA green bidirectional LED. 0399 ABB Control
Original
5/5-CPE-L24BD C0202 COCF32 RC510
Abstract: 3.5 14 10 320 L24B THKMET 3.5 12 10 280 L24C THKMET 2.5 16 , 15 25 6 L09C: Q 15 L09A: Q L09A: L 4 10 5 L24C: Q 10 L24A: Q L24B: L 7,5 4 L24B: Q L24A: L 3 L24C: L 5 2 Inductance L in nH 6 Quality , characteristic vs. frequency of a typical wafer Figure 7: L24A, L24B, L24C measured inductance characteristic X-FAB Semiconductor Foundries
Original
nmos transistor 0.35 um l24c using a zener diode as a varicap NMOS depletion pspice model cmos nand four open collector XHB06
Abstract: P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193 -
OCR Scan
12J901 BC138 TRANSISTOR 2N4241 BD117 2N4042 BC138 transistor bc138 VCB0-30V ICBO-10 12H303 12H901 12H902 VCBO-25V
Abstract: CKT'S. * L 20 21 22 23 24 DIM. A (15.85*. 13) 624±.005 (3l.73t.25) l.24B*.010 (35.66t.25) (47.55t.30 -
OCR Scan
UCP2003-2690 6442-R7-Z 6442N R17E b17z 4755T 6442-R3-Z U8-22 6442-R12-C 6442-R7-F 6442-R 6442-R14-C
Abstract: .SNB-CPE MA 2,5/5.CPE.1-L24B 0400 113.27 MA 2,5/5.2CPE.1-L24B 0400 115.21 MA2,5/5D2.2CPE.1-L24B , independent levels. MA 2,5/5D2-2CPE.1-L24BD : double deck blocks with 24 V - 4,8 mA green bidirectional LED , level allow polarity distribution. Solid wire Stranded wire Accessories MA 2,5/5-2CPE.1-L24BD , 0400 118.04 1 15 4 2 1 P/N Type MA 2,5/5-2CPE1-L24BD Standard block equipped ABB Control
Original
BFMS-20 N5V1 T24V abb automotive push bottom fuse F250mA 113 542.10 BFMS-12
Abstract: 5 L24C: Q 10 L24A: Q L24B: L 7,5 4 L24B: Q L24A: L 3 L24C: L 5 2 , characteristic and quality factor characteristic vs. frequency of a typical wafer Figure 5: L24A, L24B, L24C X-FAB Semiconductor Foundries
Original
Abstract: P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193 -
OCR Scan
OC74 CM601 BSV39 bc143 BC222 TRANSISTOR ft06 NPN110 VCBO-30V 12J301 12J302 12J303 VCBO-40V
Abstract: 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C -
OCR Scan
2N5508 2N1019 l53b 5 2SJ11 Transistors 2n551 2N550 12J902 12J905 VCBO-40VK 12X084B 12X165 VCEO-15V
Abstract: unit for PTC thermistor detectors BD 100 L2-4B BD 90 L2-4B Position and temperature sensor always ABB Automation
Original
RHDE4000 EN 10204 3.1 Neozed IMB6 ABB MOD BOARD T FAULT CODE RHDE4000-40 94-EN 3KXE111011R1001
Abstract: 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C -
OCR Scan
BSW12 2N3523 2sc912 OC83 20C74 fet bsw10 FE-30 ICBO-200 PA-300 VCEO-55V FE-100 VCB0-50V
Abstract: 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C -
OCR Scan
2N3520 2CY38 ST8014 T046 UC1100 2n5509 VCB0-80V FE-40 VCBO-80V BVCB0-50V IC-50 ICB0-10
Abstract: P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193 -
OCR Scan
st610 transistor A520 2N3942 AD140 NPN Transistor 6A 70V 1G 2sc180
Abstract: _4A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_53 L2_54 L2_55 L2_56 L2_57 L2_58 L2 ABB Automation
Original
RHDE250 BD80K-4B PTB 99 ATEX 3122 HK-So-Li12YC11Y-OB-8 PTB 01 ATEX 3260 iec 61173 PTB 01 ATEX 3218 42/68-167-EN 3KXE111001R4201
Abstract: L2_4 A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_5 3 L2_54 L2_5 5 L2_56 L2_57 L2_58 L2 Freescale Semiconductor
Original
a798 AL207 AL205 74242 AL233 0647d DSP56004 DSP56004ROM BE31E2 C3A946 C67323 C945E0
Abstract: _46 L2_47 L2_48 L2_49 L2_4A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_53 L2_54 L2 -
OCR Scan
L23C AL212 4166C3 L25D l22f l22D L2-08 L2-09 816FE5 82DCF3 85AEB5 87137F
Abstract: _45 L2_46 L2_47 L2_48 L2_49 L2_4A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_53 L2 Motorola
Original
s46 hall s05 hall hall s41 s41 hall XCB56007 IDT74FCT821A DSP56004/007 DSP56007 DSP56L007 DSP56004FJ66 XCB56007FJ40 XCB56007FJ50
Abstract: LT19 to LT24 1 L19A to L24A 0 L19B to L24B 0 L19C to L24C 1 W40 1 W41 1 W42 1 W43 Motorola
Original
al237 al229 l22c AL254 AL241 AL20-5 68C270 69540F 69E678 6A79AD 6BA27E 6C381D
Abstract: unit for PTC thermistor detectors BD 100 L2-4B BD 90 L2-4B Position and temperature sensor always ON Semiconductor
Original
marking W36 l48b l48c LP2875AIMM-5.0L46A lt33 LT48 ENA2119A LC75805PE A2119-34/34
Abstract: 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C ON Semiconductor
Original
L37C L46B ENA2119
Abstract: P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193 ON Semiconductor
Original
Abstract: 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C Vishay Siliconix
Original
82111 S-82111-R 5M-1994
Abstract: 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C -
OCR Scan
MPS-A05 MPS-A06 a06 amplifier a06 transistor a06 transistor 165 300/U
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