NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| MAX6479BL24BD3-T | Maxim Integrated Products | IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, PBGA9, UCSP-9, Fixed/Adjustable Positive Single Output LDO Regulator | 
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| MAX6481BL24BD3-T | Maxim Integrated Products | IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, PBGA9, UCSP-9, Fixed/Adjustable Positive Single Output LDO Regulator |
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| MAX6478BL24BD4-T | Maxim Integrated Products | IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, PBGA9, UCSP-9, Fixed/Adjustable Positive Single Output LDO Regulator |
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| MAX6479BL24BD4-T | Maxim Integrated Products | IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, PBGA9, UCSP-9, Fixed/Adjustable Positive Single Output LDO Regulator |
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| MAX6480BL24BD1-T | Maxim Integrated Products | IC VREG FIXED/ADJUSTABLE POSITIVE LDO REGULATOR, PBGA9, UCSP-9, Fixed/Adjustable Positive Single Output LDO Regulator |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 3.5 14 10 320 L24B THKMET 3.5 12 10 280 L24C THKMET 2.5 16 , 15 25 6 L09C: Q 15 L09A: Q L09A: L 4 10 5 L24C: Q 10 L24A: Q L24B: L 7,5 4 L24B: Q L24A: L 3 L24C: L 5 2 Inductance L in nH 6 Quality , characteristic vs. frequency of a typical wafer Figure 7: L24A, L24B, L24C measured inductance characteristic ... | Original |
12 pages, |
QS 100 NPN Transistor analog devices transistor tutorials bsim3 depletion bsim3 model cmos nand four open collector MOS RM3 NMOS depletion pspice model l24c -L24C XHB06 XHB06 abstract |
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| Abstract: MA 2,5/5.CPE.1-L24B 0400 113.27 MA 2,5/5.2CPE.1-L24B 0400 115.21 MA2,5/5D2.2CPE.1-L24B , independent levels. MA 2,5/5D2-2CPE.1-L24BD : double deck blocks with 24 V - 4,8 mA green bidirectional LED , /5-2CPE.1-L24BD. : block equipped with 24 V - 4,8 mA green bidirectional LED. 0399 903.02 0103 002.26 0199 , 3 4 0400 118.04 1 15 4 2 1 P/N Type MA 2,5/5-2CPE1-L24BD Standard ... | Original |
10 pages, |
T24V-1 fuse F250mA C0202 abb automotive relay abb automotive level sensor N5V1 abb automotive push bottom datasheet abstract |
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| Abstract: of 0C308 0C308 73# 74# 75 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 0C318 Pt 1 , min. 76 77 78 3N97* 4JD12X043 4JD12X043 4JD12X047 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max ... | OCR Scan |
2 pages, |
transistor ad140 2N5509 AD140 BVGSS-50V VCB0-100V 2BC222 OC74 BC222 TRANSISTOR X1004 2N5505 AT128 2N3942 2N5508 transistor bc138 datasheet abstract |
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| Abstract: * L 20 21 22 23 24 DIM. A (15.85*. 13) 624±.005 (3l.73t.25) l.24B*.010 (35.66t.25) (47.55t.30) 1.872*. ... | OCR Scan |
3 pages, |
UCP2003-2690 R17E 6442N datasheet abstract |
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| Abstract: Operating Instructions 42/68-167-EN 42/68-167-EN Electrical Part Turn Actuator RHDE250 RHDE250 . 4000 (Contrac) Pos: 1 /Titelblätter / (Contrac) @ 9\mod_1181413072187_3101.doc @ 102665 Rated torque 250 . 4000 Nm (185 . 2950 lbf-ft) In Explosion Proof design P R O F I PROCESS FIELD BUS B U S ® Blinder Text Pos: 2 /Titelblätter / Copyright/Copyright-Seite @ 0\mod_1138781938968_3101.doc @ 3122 Electrical Part Turn Actuator RHDE2 ... | Original |
54 pages, |
RHDE1250 EBS862 RHDE2500 RHDE800 RHDE500 RHDE4000 motor operated ball valve iec 60068-2-6 lbf 3205 ltg 551 MOBIL GEAR OIL 626 PTB 01 ATEX 3205 PTB 01 ATEX 3218 RHDE250 42/68-167-EN RHDE250 42/68-167-EN abstract |
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| Abstract: unit for PTC thermistor detectors BD 100 L2-4B BD 90 L2-4B Position and temperature sensor always ... | Original |
16 pages, |
THERMAL Fuse m20 EBN861 EBS862 en 10204 EN 10204 3.1 control Valve M00251 ptc temperature sensor motor winding RHDE4000-40 CA14 c&k Neozed RHDE4000 EN 10204 3.1 94-EN 94-EN RHDE4000 94-EN abstract |
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| Abstract: of 0C308 0C308 73# 74# 75 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 0C318 Pt 1 , min. 76 77 78 3N97* 4JD12X043 4JD12X043 4JD12X047 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max ... | OCR Scan |
4 pages, |
100S bc143 BC222 BD117 2N2943 2N1675 transistor 2N4340 2sc113 2N3523 2N4241 transistor bc138 BSW12 OC74 BC138 BC222 TRANSISTOR datasheet abstract |
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| Abstract: ; Matched Pair 2T3033 2T3033 Pair of 0C308 0C308 73# 74# 75 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 , /dea.C;Yfs1/2-.95 min. 76 77 78 3N97* 4JD12X043 4JD12X043 4JD12X047 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS ... | OCR Scan |
4 pages, |
175C bc143 germanium transistor ac 128 ST615 ST66 transistor bc138 ST610 2N3519 2N5514 NPN Transistor 6A 70V 1G GT123 BC222 TRANSISTOR A520 2N3942 datasheet abstract |
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| Abstract: 74# 75 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 0C318 Pt 1 17W;hFE1/2 1.6 , 3N97* 4JD12X043 4JD12X043 4JD12X047 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2 ... | OCR Scan |
4 pages, |
UC1100 2N3523 2N4042 2N4241 2n5509 BC138 TRANSISTOR bc143 BC221 BC222 TRANSISTOR NS1862 T046 QD404-78 QD403-78 QD402-78 2N3520 datasheet abstract |
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| Abstract: 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA , 4JD12X047 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 ... | OCR Scan |
4 pages, |
2N5508 2N551 BC-138 BC138 BC138 TRANSISTOR bc143 2N3523 BFX82 BVCBO-30V ML111B ML131B ML132A ML132B MT131B MT132A NPN110 NPN110 abstract |
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| Abstract: Package Information Vishay Siliconix TO-251AA (HIGH VOLTAGE) 4 E1 Thermal PAD E b4 2 D1 4 3 4 A A 0.010 0.25 M C A B L2 4 B D 3 5 (Datum A) L1 L3 C C c2 A 1 C Seating plane L B B A 3 x b2 View A - A 2xe 3xb 0.010 0.25 M C A B Base metal A1 c Plating Lead tip (c) 5 b1, b3 c1 5 (b, b2) Section B - B and C - C MILLIMETERS DIM. A A1 b b1 b2 b3 b4 c c1 c2 D MIN. 2.18 0.89 0.64 0.65 0.76 0.76 4.95 0.46 0.41 0.46 5.97 MAX. 2.39 1.14 0.89 0.79 1.14 1.04 5.46 0.61 0.56 0.86 ... | Original |
1 pages, |
82111 datasheet abstract |
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| Abstract: Silicon Transistors r-^j MPS-A05 MPS-A05 MPS-A06 MPS-A06 The MPS-A05 MPS-A05 and MPS-A06 MPS-A06 are silicon planar epitaxial passivated NPN tran- sistors designed for general purpose audio amplifier applications. absolute maximum ratings: (TA = 25°C unless otherwise specified) Voltages MPS-A05 MPS-A05 MPS-A06 MPS-A06 Collector to Emitter VCEO 60 80 Volts Collector to Base VCBO 60 80 Volts Emitter to Base VEBO 4 4 Volts Current Collector Ic 500 500 mA Dissipation Total Power TA < 25° C PT 625 625 m Watts Total ... | OCR Scan |
2 pages, |
MPS-A06 MPS-A05 a06 transistor 165 a06 transistor a06 amplifier MPS-A05 abstract |
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| Abstract: Silicon Darlington Transistor The General Electric MPS-A12 MPS-A12 is a Silicon Planar Epitaxial Passivated NPN Darlington Transistor is designed for preamplifier input applications where high impedance is a requirement. absolute maximum ratings: (TA = 25°C unless otherwise specified) Voltages Collector to Emitter Collector to Base Emitter to Base Current Collector Dissipation Total Power TA < 25°C Derating Factor TA > 25° C Temperature Storage Operating Lead (1/16" ± 1/32" from case for 10 sec. ... | OCR Scan |
2 pages, |
MPS-A12 1348 transistor MPS-A12 abstract |
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| Abstract: Silicon Darlington Transistor r-xj MPS-A65 MPS-A65 MPS-A66 MPS-A66 The General Electric MPS-A65 MPS-A65, A66 are Silicon Planar Epitaxial Passivated PNP Darlington Transistors designed for preamplifier input applications where high impedance is a requirement. absolute maximum ratings: (TA = 25°C unless otherwise specified) Voltages Collector to Emitter Vces 30 Volts Collector to Base VcB 30 Volts Emitter to Base Veb 8 Volts Current Collector Ic 300 mA Dissipation Total Power TA < 25°C PT 625 mWat ... | OCR Scan |
2 pages, |
MPS-A66 MPS-A65 MPS-A65 abstract |
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| Abstract: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo @ 10mA (V) hFE VCE sat) h Typical (MHz) Ccb@10V 1 MHz Typical (PF> â- c Continuous (mA) Pr @ 25° C (mW) Min. Max. ... | OCR Scan |
3 pages, |
2N4402 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N3903 2N3903 abstract |
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