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L24b

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 127.25 MA 2,5/5D2.2CPE 0400 106.01 MA 2,5/5.SNB-CPE MA 2,5/5.CPE.1-L24B 0400 113.27 MA 2,5/5.2CPE.1-L24B 0400 115.21 MA2,5/5D2.2CPE.1-L24B 0400 121.27 MA2,5/5 , blocks with 2 independent levels. MA 2,5/5D2-2CPE.1-L24BD : double deck blocks with 24 V - 4,8 mA , 2,5/5-2CPE.1-L24BD. : block equipped with 24 V - 4,8 mA green bidirectional LED. 0399 ABB Control
Original
5/5-CPE-L24BD C0202 COCF32 RC510

nmos transistor 0.35 um

Abstract: npn pnp rf transistor bipolar cross reference 3.5 14 10 320 L24B THKMET 3.5 12 10 280 L24C THKMET 2.5 16 , 15 25 6 L09C: Q 15 L09A: Q L09A: L 4 10 5 L24C: Q 10 L24A: Q L24B: L 7,5 4 L24B: Q L24A: L 3 L24C: L 5 2 Inductance L in nH 6 Quality , characteristic vs. frequency of a typical wafer Figure 7: L24A, L24B, L24C measured inductance characteristic
X-FAB Semiconductor Foundries
Original
nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice XHB06

BC138 TRANSISTOR

Abstract: 2N4241 P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193
-
OCR Scan
12J901 BC138 TRANSISTOR 2N4241 BD117 2N4042 BC138 transistor bc138 VCB0-30V ICBO-10 12H303 12H901 12H902 VCBO-25V

6442-R7-Z

Abstract: 6442N CKT'S. * L 20 21 22 23 24 DIM. A (15.85*. 13) 624±.005 (3l.73t.25) l.24B*.010 (35.66t.25) (47.55t.30
-
OCR Scan
UCP2003-2690 6442-R7-Z 6442N b17z R17E 6442-R3-Z U8-22 6442-R12-C 6442-R7-F 6442-R 6442-R14-C

N5V1

Abstract: fuse F250mA .SNB-CPE MA 2,5/5.CPE.1-L24B 0400 113.27 MA 2,5/5.2CPE.1-L24B 0400 115.21 MA2,5/5D2.2CPE.1-L24B , independent levels. MA 2,5/5D2-2CPE.1-L24BD : double deck blocks with 24 V - 4,8 mA green bidirectional LED , level allow polarity distribution. Solid wire Stranded wire Accessories MA 2,5/5-2CPE.1-L24BD , 0400 118.04 1 15 4 2 1 P/N Type MA 2,5/5-2CPE1-L24BD Standard block equipped
ABB Control
Original
BFMS-20 N5V1 fuse F250mA T24V abb automotive push bottom abb automotive level sensor BFMS-12
Abstract: 5 L24C: Q 10 L24A: Q L24B: L 7,5 4 L24B: Q L24A: L 3 L24C: L 5 2 , characteristic and quality factor characteristic vs. frequency of a typical wafer Figure 5: L24A, L24B, L24C X-FAB Semiconductor Foundries
Original

CM601

Abstract: 2N4241 P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193
-
OCR Scan
CM601 OC74 BSV39 2N4241MP OC83 30T2 NPN110 VCBO-30V 12J301 12J302 12J303 VCBO-40V

2N5508

Abstract: 2SJ11 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C
-
OCR Scan
2N5508 2SJ11 2N1019 Transistors 2n551 l53b 5 BC222 12J902 12J905 VCBO-40VK 12X084B 12X165 VCEO-15V

EN 10204 3.1

Abstract: Neozed unit for PTC thermistor detectors BD 100 L2-4B BD 90 L2-4B Position and temperature sensor always
ABB Automation
Original
RHDE4000 EN 10204 3.1 Neozed IMB6 M00251 CA14 c&k 94-EN 3KXE111011R1001

BC138

Abstract: 2N4042 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C
-
OCR Scan
BC222 TRANSISTOR 2N3523 BSW12 2sc113 bc143 transistor 2N4340 FE-30 ICBO-200 PA-300 VCEO-55V FE-100 VCB0-50V

BC138

Abstract: 2N3520 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C
-
OCR Scan
2N3520 2CY38 ST8014 NS1862 QD400-78 QD401-78 VCB0-80V FE-40 VCBO-80V BVCB0-50V IC-50 ICB0-10

BD117

Abstract: 2N3523 P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193
-
OCR Scan
st610 transistor 2N3942 A520 2N3519 2N5514 GT123

PTB 99 ATEX 3122

Abstract: BD80K-4B _4A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_53 L2_54 L2_55 L2_56 L2_57 L2_58 L2
ABB Automation
Original
RHDE250 PTB 99 ATEX 3122 BD80K-4B HK-So-Li12YC11Y-OB-8 PTB 01 ATEX 3260 iec 61173 PTB 01 ATEX 3218 42/68-167-EN 3KXE111001R4201

a798

Abstract: AL207 L2_4 A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_5 3 L2_54 L2_5 5 L2_56 L2_57 L2_58 L2
Freescale Semiconductor
Original
a798 AL207 AL205 74242 AL233 0647d DSP56004 DSP56004ROM BE31E2 C3A946 C67323 C945E0

AL205

Abstract: AL207 _46 L2_47 L2_48 L2_49 L2_4A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_53 L2_54 L2
-
OCR Scan
L23C AL212 68319A l22D AL262 L25D L2-08 L2-09 816FE5 82DCF3 85AEB5 87137F

s46 hall

Abstract: AL233 _45 L2_46 L2_47 L2_48 L2_49 L2_4A L2_4B L2_4C L2_4D L2_4E L2_4F L2_50 L2_51 L2_52 L2_53 L2
Motorola
Original
s46 hall s05 hall hall s41 XCB56007 s41 hall 5b s93 DSP56004/007 DSP56007 DSP56L007 DSP56004FJ66 XCB56007FJ40 XCB56007FJ50

AL205

Abstract: al237 LT19 to LT24 1 L19A to L24A 0 L19B to L24B 0 L19C to L24C 1 W40 1 W41 1 W42 1 W43
Motorola
Original
al237 al229 AL20-5 l22c AL241 AL254 68C270 69540F 69E678 6A79AD 6BA27E 6C381D

marking W36

Abstract: l48b unit for PTC thermistor detectors BD 100 L2-4B BD 90 L2-4B Position and temperature sensor always
ON Semiconductor
Original
marking W36 l48b w50 MARKING CODE marking L46B marking w53 lt33 ENA2119A LC75805PE A2119-34/34

l47c

Abstract: L37C 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C
ON Semiconductor
Original
l47c L37C L46B ENA2119
Abstract: P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V;IC 400mA;ft 1.0MHz. VGS , Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C;Yfs1/2-.95 min. Pt-800mW; Two 2N2193 ON Semiconductor
Original

82111

Abstract: 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C
Vishay Siliconix
Original
82111 S-82111-R 5M-1994

a06 amplifier

Abstract: a06 transistor 2xOC318 2X2N3055t 3N96* 6 6 6 P N-D P 0 Ge Si Si T03 L24b C0 Pair of 0C318 Pt 1 17W;hFE1/2 1.6 at VCE 4.0V , * 4JD12X043 4JD12X047 6 6 6 P 0 N-PE N-PE Si Si Si L24b L2b L2b VGS(1-2)-200mV max;AVGS(1-2)/AT-8mV/deg.C
-
OCR Scan
MPS-A05 MPS-A06 a06 amplifier a06 transistor a06 transistor 165 300/U
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