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Part : AMC1304L05DW Supplier : Texas Instruments Manufacturer : Avnet Stock : - Best Price : €6.3135 Price Each : €9.43
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Part : MC100EL05DR2G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 4,020 Best Price : $3.68 Price Each : $4.53
Part : MC100EL05DT Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 4,995 Best Price : $1.84 Price Each : $2.26
Part : MC100EL05DTG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 11,342 Best Price : $3.68 Price Each : $4.53
Part : MC100EL05DTR2G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,170 Best Price : $3.68 Price Each : $4.53
Part : MC100LVEL05D Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 23,206 Best Price : $2.21 Price Each : $2.72
Part : MC100LVEL05DG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 314 Best Price : $4.09 Price Each : $5.03
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Part : MC10EL05D Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 8,957 Best Price : $1.84 Price Each : $2.26
Part : MC10EL05DG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 7,603 Best Price : $3.68 Price Each : $4.53
Part : MC10EL05DR2G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 3,972 Best Price : $3.68 Price Each : $4.53
Part : MC10EL05DT Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 5,423 Best Price : $1.84 Price Each : $2.26
Part : MC10EL05DTG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 19,507 Best Price : $3.68 Price Each : $4.53
Part : MC10EL05DTR2G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 10,100 Best Price : $3.68 Price Each : $4.53
Part : MC100LVEL05DT Supplier : ON Semiconductor Manufacturer : America II Electronics Stock : 1,390 Best Price : - Price Each : -
Part : MC100EL05DG Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 10 Best Price : - Price Each : -
Part : AMC1304L05DW Supplier : Texas Instruments Manufacturer : RS Components Stock : 40 Best Price : £5.86 Price Each : £9.11
Part : MC100LVEL05DG Supplier : ON Semiconductor Manufacturer : RS Components Stock : 50 Best Price : £3.59 Price Each : £4.31
Part : CGWL05D Supplier : - Manufacturer : basicEparts Stock : 337 Best Price : - Price Each : -
Part : AMC1304L05DW Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 80 Best Price : $8.6250 Price Each : $9.8910
Part : AMC1304L05DW Supplier : Texas Instruments Manufacturer : Chip1Stop Stock : 80 Best Price : $10.00 Price Each : $10.00
Part : DCXL05DS Supplier : Honeywell Manufacturer : Chip1Stop Stock : 20 Best Price : $117.3600 Price Each : $117.6500
Part : MC100EL05DG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 131 Best Price : $3.13 Price Each : $4.4820
Part : MC100LVEL05DTG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 3 Best Price : $6.2570 Price Each : $6.2570
Part : AMC1304L05DW Supplier : Texas Instruments Manufacturer : element14 Asia-Pacific Stock : 80 Best Price : $6.64 Price Each : $12.6320
Part : MC100EL05DG Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 89 Best Price : $3.74 Price Each : $7.7040
Part : MC100EL05DG. Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 16 Best Price : $3.74 Price Each : $7.7040
Part : MC100LVEL05DG Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 82 Best Price : $3.99 Price Each : $7.6880
Part : AMC1304L05DW Supplier : Texas Instruments Manufacturer : Farnell element14 Stock : 80 Best Price : £4.97 Price Each : £8.20
Part : MC100EL05DG Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 89 Best Price : £2.94 Price Each : £5.21
Part : MC100EL05DG. Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 16 Best Price : £3.28 Price Each : £4.84
Part : MC100LVEL05DG Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 82 Best Price : £3.03 Price Each : £5.13
Part : ASDXL05D44D Supplier : Honeywell Manufacturer : Master Electronics Stock : 2 Best Price : $32.21 Price Each : $73.63
Part : DCXL05DN Supplier : Honeywell Manufacturer : Master Electronics Stock : 32 Best Price : $77.53 Price Each : $119.27
Part : DCXL05DS Supplier : Honeywell Manufacturer : Master Electronics Stock : 14 Best Price : $41.29 Price Each : $94.39
Part : DUXL05D Supplier : Honeywell Manufacturer : Master Electronics Stock : 15 Best Price : $93.18 Price Each : $124.08
Part : SCDA144DCXL05DS Supplier : Honeywell Manufacturer : Sager Stock : - Best Price : - Price Each : -
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L05 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: pins D0 and D1 uses the subcircuit model ESDIN. In the ESDIN model, a diode (CBVCC) goes to VCC with a parallel resistor of high value (75 kW) and a diode pair (CBSUB devices) go to VEE. The input has a series , output pins (Q0, Q0bar, Q1, Q1bar) use subcircuit model ESDOUT. The ESDOUT is modeled as diode (CBVCC) to VCC and a diode pair (CBSUB devices) to VEE. .SUBCKT ESDOUT 100 200 1 D1 1 100 CBVCC D2 1 200 , 1.367E­09 L04 N04M N04O 7.723E­10 C04 N04M 0 2.443E­13 L05WB N05I N05M 1.367E­09 L05 N05M ON Semiconductor
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MC100LVELT22 k0304 K0204 N03m DIODE C06 15 k0203 26M transistor AND8010/D LVELT22
Abstract: Dimensions: (mm) ROUND Long leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0 , (%) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward , Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 10 , Voltage (V) Reverse Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6 Fagor
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W02F W04F Diode bridge W06F W06F W005F-W10F W06FA W005F 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102
Abstract: leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 5 ±0.5 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting code Marking code , ) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge , Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 10 , Voltage (V) Reverse Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6 Fagor
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WL005F WL02F WL08F WL06FA WL10F WL01F WL04F WL06F
Abstract: Long leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting code Marking , Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge Current (A) 100 TJ = 25 °C Pulse Width = 300 us 1 % Duty Cycle 10 Figure 4. Typical Reverse Characteristics Per Diode 100 , Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6. Typical Junction Fagor
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B80C1000 B250C1000 B250-C1000 B40C1000A b125c1000 b40c1000 B40C1000B B40C1000 B380C1000 B125C1000
Abstract: leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting code Marking code Marking code Year code , ) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge , Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 10 , Voltage (V) Reverse Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6 Fagor
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B250C800 Bridge Rectifier C800 b80c800 B250C800 DIP fagor B 80 bridge rectifier B250C800B B40C800 B380C800 B80C800 B125C800
Abstract: Diode Models for GigaComm * .MODEL TNSGB NPN (IS=2.18e­17 BF=179 NF=1 VAF=96.5 IKF , L05 N05C N05O 4.274e­10 R06 N06I N06C 8.600e­02 C06 N06C BD_GND 5.457e­14 L06 N06C N06O , L04 L04 L05 N05C L05 L05 N08C BD_GND N08O N09C BD_GND N09O N10C BD_GND N10O N11C , BD_GND N16O L02 N02C L03 L05 N05C L06 N06C L07 L09 L16 L03 N03C L04 L05 L06 N06C L07 L04 N04C L05 L06 L07 N07C L08 L06 L07 N07C L08 N08C L12 L13 L06 N06C L07 L09 ON Semiconductor
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C1013 transistor K0107 transistor c1013 transistor k0307 n15c it 8500e AND8077/D
Abstract: ) ROUND Long leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting , Diode Instantaneous Forward Surge Current (A) 100 TJ = 25 °C Pulse Width = 300 us 1 % Duty Cycle 10 Figure 4. Typical Reverse Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = , Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode www.fagorelectronica.com Document Fagor
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B250-C1500R b250c1500r B40C1500R B380C1500R B80C1500R B125C1500R B250C1500R
Abstract: ) * Transistor and Diode Models for GigaComm * .MODEL TNSGB NPN (IS=2.18e­17 BF=179 NF=1 VAF , BD_GND 6.660e­14 L04 N04C N04O 8.264e­10 R05 N05I N05C 8.600e­02 C05 N05C BD_GND 5.632e­14 L05 N05C N05O , L02 L03 N03C L03 L03 L03 N03C L03 L04 L04 N04C L04 N04C L04 L04 L05 N05C L05 L05 N08C BD_GND N08O N09C , BD_GND N15O N16C BD_GND N16O L02 N02C L03 L05 N05C L06 N06C L07 L09 L16 L03 N03C L04 L05 L06 N06C L07 L04 N04C L05 L06 L07 N07C L08 L06 L07 N07C L08 N08C L12 L13 L06 N06C L07 L09 8.600e­02 6.380e­14 4.280e­10 ON Semiconductor
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transistor c1014 k0207 K0816 K0915 transistor k0308 k0307 transistor
Abstract: ZLLS500 SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary · · · VR = 40V IF = 0.7A IR = 10A Features and Benefits · · · · · · Extremely low leakage (10A @30V) High current capability (IF = 0.7A) Low , This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising , website at http://www.diodes.com. Marking Information L05 L05 = Product Type Marking Code , / ns. Rsource = 6; Rload= 10 Forward Voltage (Note 4) VF mV Reverse Current Diode Diodes
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L05 SOT23 K1 SOT23 SOT23 marking L05 ZHCS500 AEC-Q101 J-STD-020 MIL-STD-202 ZLLS500TA ZLLS500TC
Abstract: ZLLS500 SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary Features and Benefits â'¢ â , Applications This compact SOT23 packaged Schottky diode offers users an excellent performance combination , Packaging Details, go to our website at http://www.diodes.com. Marking Information L05 ZLLS500 Document number: DS33227 Rev. 6 - 2 L05 = Product Type Marking Code 1 of 6 www.diodes.com January , Current IR Diode Capacitance CD Min 40 - Reverse Recovery Time trr - 3 - Diodes
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3000/T
Abstract: ZLLS500 SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary · · · VR = 40V IF = 0.7A IR = 10A Features and Benefits · · · · · · Extremely low leakage (10A @30V) High current capability (IF = 0.7A) Low , This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising , ://www.diodes.com. Marking Information L05 L05 = Product Type Marking Code ZLLS500 Document number , Forward Voltage (Note 4) VF mV Reverse Current Diode Capacitance Reverse Recovery Time Reverse Diodes
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DS-332
Abstract: +S COS -C +C VDDP PCAP NCAP VSSP AGND VDD GND VSS 2 RD-19230 L-05/03-300 SYNTHESIZED REFERENCE , minute + 1 LSB up to 5 kHz max. Data Device Corporation www.ddc-web.com 3 RD-19230 L-05/03-300 , Device Corporation www.ddc-web.com 4 RD-19230 L-05/03-300 THEORY OF OPERATION The RD-19230 is , sine and cosine input amplifiers which are protected up to ±25 V with 2 kW resistors and diode clamps , PLOTS RD-19230 L-05/03-300 GENERAL SETUP CONDITIONS DDC has external component selection software Data Device
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RD-19230FX RD19230 rdc 19230 16-BIT DDC-55688-1 RD19230EX-300 L-05/03-300 1-800-DDC-5757 A5976
Abstract: inputs pins D0 and D1 uses the subcircuit model ESDIN. In the ESDIN model, a diode (CBVCC) goes to VCC with a parallel resistor of high value (75 kW) and a diode pair (CBSUB devices) go to VEE. The input , as diode (CBVCC) to VCC and a diode pair (CBSUB devices) to VEE. .SUBCKT ESDOUT 100 200 1 D1 1 100 , 1.367E­09 L04 N04M N04O 7.723E­10 C04 N04M 0 2.443E­13 L05WB N05I N05M 1.367E­09 L05 N05M , K0405WB L04WB K0406WB L04WB K0506 L05 K0506WB L05WB C0506 N05O K0507 L05 K0507WB L05WB K0607 ON Semiconductor
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794e k0305 motorola LOGIC N04m NE 544 spice model
Abstract: 150MWF 300MWF 75WH BOWH BOWH 60M 100M 200K 200K 200K L05 L05 L05 L05 L05 80V 40V 60V 40V 40V 80V 40V , 80WH 80WH T03 T03 T03 T03 T03 L05 L05 L05 L05 L05 60V 80V 40V 60V 80V 60V 80V 40V 60V 80V 30V 30V , TOIA L05 LOl LOl LOl LOl 80V 20V 20V 30V 30V 80V 20V 20V 30V 30V IV 10V 10V 10V 10V 3A 300MA 300MA , 2G220 2G221 PG PG PG PG PG TOIB T05 T03 T03 T03 LOl L04 L05 L05 L05 2G222 2G223 2G224 2G225 2G226 , 20MA 5MA T036 T036 T036 XOl T03 L13 L13 L13 L03 L05 6DV 80V 45V 55V 40V 2N175 2N176 PG PG PG PG -
OCR Scan
y51 h 120c BFQ59 al103 bd192 ac128 Silec Semiconductors 500MA 240MWF 100MWF 100MA 2G306 2G308
Abstract: r bja 100 °C/W Source-Drain Diode Specifications PARAMETERS Forward Voltage Reverse , RES (TC1=-3.46e-3 TC2=3 330-7) S1AMOD VSW ITCH (R O N =l0-5 ROFF=0.1 VON=6.3 VOFF=4.3) S1BMOD VSW ITCH (R O N =l0-5 ROFF=0.1 VON=4.3 VOFF=6.3) S2AMOD VSW ITCH (R O N =l0-5 ROFF=0.1 V O N *1.0 VOFF -
OCR Scan
IRFR9120 IF9120 TA17501 123E5 p-channel pspice model IRFU9120 IF912G IRFR91209A
Abstract: anode configuration also available. ABSOLUTE MAXIMUM RATINGS (Per Diode) Working Peak Reverse Voltage , Forward Current, A Non-Repetitive Peak Surge Current (8.3 mS , Diode) ohnirel corpT-o3-/7 Symbol Characteristic Conditions Max. Units VF Maximum Instantaneous -
OCR Scan
OM4212SM 100-C
Abstract: anode configuration also available. ABSOLUTE MAXIMUM RATINGS (Per Diode) Working Peak Reverse Voltage , Forward Current, A Non-Repetitive Peak Surge Current (8.3 mS , â OMNI ELECTRICAL CHARACTERISTICS (Per Diode) ohnirel corpT-o3-/7 Symbol Characteristic Conditions Max -
OCR Scan
2SC1020 rsy diode 150-C-
Abstract: Kingbright Features l0.5 ® 12.7mm (0.5 INCH) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAYS , Arsenide Phosphide Red Light Emitting Diode. The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Yellow source color devices are made with Kingbright
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8p055 PSA05-11 PSA05-12 PSC05-11 PSC05-12 8-P05-1 PSA05-11RWA
Abstract: Kingbright Features l0.5 ® 12.7mm (0.5INCH) SINGLE DIGIT NUMERIC DISPLAYS SA05-11 SC05-11 Description The Red source color device are made with Gallium Arsendide Phosphide Red Light Emitting Diode. The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High , Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Kingbright
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SA05-11HWA SC05-11HWA SA05 kingbright sa05 S05-3 7-S05-1 SA05-11RWA SC05-11RWA SA05-11EWA
Abstract: 0.23 100 l0.5 Part Number (nm) Package Bandwidth 5.0 Peak Wave length (nm , photo diode varies by two orders of magnitude when the load resistor value changes from 50 Ω to 10 kΩ. The lower the value of the load resistor, the faster the diode becomes. Also, the higher the , 430 to 1100(4) 35 65 4.4 100 Gullwing 430 to 1100 l0.5 Bandwidth Part , Number Package Peak Wavelength (nm) Bandwidth l0.5 (nm) Collector Light Current, Ica Vishay Intertechnology
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VMN-SG2123-1404 VCNL4010 VCNL4020 VCNL3020
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