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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

L05 diode

Catalog Datasheet MFG & Type PDF Document Tags

k0304

Abstract: K0204 pins D0 and D1 uses the subcircuit model ESDIN. In the ESDIN model, a diode (CBVCC) goes to VCC with a parallel resistor of high value (75 kW) and a diode pair (CBSUB devices) go to VEE. The input has a series , output pins (Q0, Q0bar, Q1, Q1bar) use subcircuit model ESDOUT. The ESDOUT is modeled as diode (CBVCC) to VCC and a diode pair (CBSUB devices) to VEE. .SUBCKT ESDOUT 100 200 1 D1 1 100 CBVCC D2 1 200 , 1.367E­09 L04 N04M N04O 7.723E­10 C04 N04M 0 2.443E­13 L05WB N05I N05M 1.367E­09 L05 N05M
ON Semiconductor
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MC100LVELT22 k0304 K0204 N03m DIODE C06 15 k0203 26M transistor AND8010/D LVELT22

W02F

Abstract: W04F Dimensions: (mm) ROUND Long leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0 , (%) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward , Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 10 , Voltage (V) Reverse Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6
Fagor
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W02F W04F W06F Diode bridge W06F W10F L05 diode W005F 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102

WL02F

Abstract: WL08F leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 5 ±0.5 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting code Marking code , ) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge , Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 10 , Voltage (V) Reverse Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6
Fagor
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WL005F WL02F WL08F WL06FA WL10F WL01F WL04F WL06F

B250-C1000

Abstract: B40C1000A Long leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting code Marking , Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge Current (A) 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 Figure 4. Typical Reverse Characteristics Per Diode 100 , Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6. Typical Junction
Fagor
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B80C1000 B250C1000 B250-C1000 B40C1000A fagor B 80 bridge rectifier b125c1000 fagor bridge rectifier B40C1000 B380C1000 B125C1000

Bridge Rectifier C800

Abstract: b80c800 leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting code Marking code Marking code Year code , ) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Instantaneous Forward Surge , Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 10 , Voltage (V) Reverse Voltage (V) Figure 5. Typical Forward Characteristics Per Diode Figure 6
Fagor
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B250C800 Bridge Rectifier C800 b80c800 B250C800 DIP B250C800B B380-C800 B40C800 B380C800 B80C800 B125C800

C1013 transistor

Abstract: K0107 Diode Models for GigaComm * .MODEL TNSGB NPN (IS=2.18e­17 BF=179 NF=1 VAF=96.5 IKF , L05 N05C N05O 4.274e­10 R06 N06I N06C 8.600e­02 C06 N06C BD_GND 5.457e­14 L06 N06C N06O , L04 L04 L05 N05C L05 L05 N08C BD_GND N08O N09C BD_GND N09O N10C BD_GND N10O N11C , BD_GND N16O L02 N02C L03 L05 N05C L06 N06C L07 L09 L16 L03 N03C L04 L05 L06 N06C L07 L04 N04C L05 L06 L07 N07C L08 L06 L07 N07C L08 N08C L12 L13 L06 N06C L07 L09
ON Semiconductor
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C1013 transistor K0107 transistor c1013 transistor k0307 it 8500e n15c AND8077/D

fagor B 80 bridge rectifier

Abstract: b250c1500r ) ROUND Long leads 5±0.5 9.5 ±0.5 Short leads 8.5±0.5 Suffix "A" L±0.5 4 3 5 ±0.5 "B" 4.1±0.5 30±1 4.1±0.5 ø0.8±0.05 C Serie W Serie L±0.5 ø0.8±0.05 Test sorting , Diode Instantaneous Forward Surge Current (A) 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 10 Figure 4. Typical Reverse Characteristics Per Diode 100 Junction Capacitance (pF) TJ = 25 °C f = , Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode www.fagorelectronica.com Document
Fagor
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B80C1500R b250c1500r B250-C1500R B40C1500R B380C1500R B125C1500R B250C1500R

transistor c1013

Abstract: K0107 ) * Transistor and Diode Models for GigaComm * .MODEL TNSGB NPN (IS=2.18e­17 BF=179 NF=1 VAF , BD_GND 6.660e­14 L04 N04C N04O 8.264e­10 R05 N05I N05C 8.600e­02 C05 N05C BD_GND 5.632e­14 L05 N05C N05O , L02 L03 N03C L03 L03 L03 N03C L03 L04 L04 N04C L04 N04C L04 L04 L05 N05C L05 L05 N08C BD_GND N08O N09C , BD_GND N15O N16C BD_GND N16O L02 N02C L03 L05 N05C L06 N06C L07 L09 L16 L03 N03C L04 L05 L06 N06C L07 L04 N04C L05 L06 L07 N07C L08 L06 L07 N07C L08 N08C L12 L13 L06 N06C L07 L09 8.600e­02 6.380e­14 4.280e­10
ON Semiconductor
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transistor c1014 k0207 K0915 transistor K0816 8600E k0307 transistor

L05 SOT23

Abstract: K1 SOT23 ZLLS500 SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary · · · VR = 40V IF = 0.7A IR = 10A Features and Benefits · · · · · · Extremely low leakage (10A @30V) High current capability (IF = 0.7A) Low , This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising , website at http://www.diodes.com. Marking Information L05 L05 = Product Type Marking Code , / ns. Rsource = 6; Rload= 10 Forward Voltage (Note 4) VF mV Reverse Current Diode
Diodes
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L05 SOT23 K1 SOT23 SOT23 marking L05 ZHCS500 AEC-Q101 J-STD-020 MIL-STD-202 ZLLS500TA ZLLS500TC
Abstract: ZLLS500 SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary Features and Benefits â'¢ â , Applications This compact SOT23 packaged Schottky diode offers users an excellent performance combination , Packaging Details, go to our website at http://www.diodes.com. Marking Information L05 ZLLS500 Document number: DS33227 Rev. 6 - 2 L05 = Product Type Marking Code 1 of 6 www.diodes.com January , Current IR Diode Capacitance CD Min 40 - Reverse Recovery Time trr - 3 - Diodes
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3000/T

L05 SOT23

Abstract: ZLLS500 ZLLS500 SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary · · · VR = 40V IF = 0.7A IR = 10A Features and Benefits · · · · · · Extremely low leakage (10A @30V) High current capability (IF = 0.7A) Low , This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising , ://www.diodes.com. Marking Information L05 L05 = Product Type Marking Code ZLLS500 Document number , Forward Voltage (Note 4) VF mV Reverse Current Diode Capacitance Reverse Recovery Time Reverse
Diodes
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DS-332

RD-19230FX

Abstract: RD19230 +S COS -C +C VDDP PCAP NCAP VSSP AGND VDD GND VSS 2 RD-19230 L-05/03-300 SYNTHESIZED REFERENCE , minute + 1 LSB up to 5 kHz max. Data Device Corporation www.ddc-web.com 3 RD-19230 L-05/03-300 , Device Corporation www.ddc-web.com 4 RD-19230 L-05/03-300 THEORY OF OPERATION The RD-19230 is , sine and cosine input amplifiers which are protected up to ±25 V with 2 kW resistors and diode clamps , PLOTS RD-19230 L-05/03-300 GENERAL SETUP CONDITIONS DDC has external component selection software
Data Device
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RD-19230FX RD19230 rdc 19230 16-BIT DDC-55688-1 RD19230EX-300 L-05/03-300 1-800-DDC-5757 A5976

N03m

Abstract: 794e inputs pins D0 and D1 uses the subcircuit model ESDIN. In the ESDIN model, a diode (CBVCC) goes to VCC with a parallel resistor of high value (75 kW) and a diode pair (CBSUB devices) go to VEE. The input , as diode (CBVCC) to VCC and a diode pair (CBSUB devices) to VEE. .SUBCKT ESDOUT 100 200 1 D1 1 100 , 1.367E­09 L04 N04M N04O 7.723E­10 C04 N04M 0 2.443E­13 L05WB N05I N05M 1.367E­09 L05 N05M , K0405WB L04WB K0406WB L04WB K0506 L05 K0506WB L05WB C0506 N05O K0507 L05 K0507WB L05WB K0607
ON Semiconductor
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794e NE 544 spice model N04m k0305 motorola LOGIC

y51 h 120c

Abstract: ac128 150MWF 300MWF 75WH BOWH BOWH 60M 100M 200K 200K 200K L05 L05 L05 L05 L05 80V 40V 60V 40V 40V 80V 40V , 80WH 80WH T03 T03 T03 T03 T03 L05 L05 L05 L05 L05 60V 80V 40V 60V 80V 60V 80V 40V 60V 80V 30V 30V , TOIA L05 LOl LOl LOl LOl 80V 20V 20V 30V 30V 80V 20V 20V 30V 30V IV 10V 10V 10V 10V 3A 300MA 300MA , 2G220 2G221 PG PG PG PG PG TOIB T05 T03 T03 T03 LOl L04 L05 L05 L05 2G222 2G223 2G224 2G225 2G226 , 20MA 5MA T036 T036 T036 XOl T03 L13 L13 L13 L03 L05 6DV 80V 45V 55V 40V 2N175 2N176 PG PG PG PG
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OCR Scan
y51 h 120c ac128 MM1711 Silec Semiconductors BFQ59 bd192 500MA 240MWF 100MWF 100MA 2G306 2G308

IRFR9120

Abstract: p-channel pspice model r bja 100 °C/W Source-Drain Diode Specifications PARAMETERS Forward Voltage Reverse , RES (TC1=-3.46e-3 TC2=3 330-7) S1AMOD VSW ITCH (R O N =l0-5 ROFF=0.1 VON=6.3 VOFF=4.3) S1BMOD VSW ITCH (R O N =l0-5 ROFF=0.1 VON=4.3 VOFF=6.3) S2AMOD VSW ITCH (R O N =l0-5 ROFF=0.1 V O N *1.0 VOFF
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OCR Scan
IRFR9120 IF9120 TA17501 p-channel pspice model 123E5 IRFU9120 IF912G IRFR91209A

L05 diode

Abstract: 100-C anode configuration also available. ABSOLUTE MAXIMUM RATINGS (Per Diode) Working Peak Reverse Voltage , Forward Current, A Non-Repetitive Peak Surge Current (8.3 mS , Diode) ohnirel corpT-o3-/7 Symbol Characteristic Conditions Max. Units VF Maximum Instantaneous
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OCR Scan
OM4212SM 100-C

2SC1020

Abstract: L05 diode anode configuration also available. ABSOLUTE MAXIMUM RATINGS (Per Diode) Working Peak Reverse Voltage , Forward Current, A Non-Repetitive Peak Surge Current (8.3 mS , â OMNI ELECTRICAL CHARACTERISTICS (Per Diode) ohnirel corpT-o3-/7 Symbol Characteristic Conditions Max
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OCR Scan
2SC1020 rsy diode 150-C-

L05 diode

Abstract: 8p055 Kingbright Features l0.5 ® 12.7mm (0.5 INCH) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAYS , Arsenide Phosphide Red Light Emitting Diode. The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Yellow source color devices are made with
Kingbright
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8p055 PSA05-11 PSA05-12 PSC05-11 PSC05-12 8-P05-1 PSA05-11RWA

SA05-11HWA

Abstract: SC05-11HWA Kingbright Features l0.5 ® 12.7mm (0.5INCH) SINGLE DIGIT NUMERIC DISPLAYS SA05-11 SC05-11 Description The Red source color device are made with Gallium Arsendide Phosphide Red Light Emitting Diode. The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High , Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on
Kingbright
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SA05-11HWA SC05-11HWA SA05 kingbright sa05 S05-3 7-S05-1 SA05-11RWA SC05-11RWA SA05-11EWA
Abstract: 0.23 100 l0.5 Part Number (nm) Package Bandwidth 5.0 Peak Wave length (nm , photo diode varies by two orders of magnitude when the load resistor value changes from 50 Ω to 10 kΩ. The lower the value of the load resistor, the faster the diode becomes. Also, the higher the , 430 to 1100(4) 35 65 4.4 100 Gullwing 430 to 1100 l0.5 Bandwidth Part , Number Package Peak Wavelength (nm) Bandwidth l0.5 (nm) Collector Light Current, Ica Vishay Intertechnology
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VMN-SG2123-1404 VCNL4010 VCNL4020 VCNL3020
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