KV1720R/S KV1720R KV1720S KV1720RTL KV1720STL 4279AOSC 4291B C2C5C83

FM KV1720R/S FEATURES Included Twin Element Very Small Tolerance of Element Being Next Device To Each Other Excellent Linearity

Variable capacitance diode for FM tuning FM KV1720R/S KV1720R/S FEATURES Included Twin Element Very Small Tolerance of Element Being Next Device To Each Other Excellent Linearity of The CV Curve Extra Large Capacitance Ratio: A=2.00 to Very Small Series Resistance: RS=to 0.3 CLASSIFICATION Rank C C2 MIN MAX 1 CV : A=2.00~ : RS=~0.3 PACKAGE OUTLINE 1 2 3 4 41.17 42.76 42.33 43.96 43.52 45.20 44.75 46.48 Part name KV1720R KV1720R KV1720S KV1720S ORDERING INFORMATION Package SOT23C-3 SOT23-3 Marking Pin configulation C2 C2 KV1720RTL KV1720RTL.Storage direction: TL(Left type) KV1720STL KV1720STL.Storage direction: TL(Left type) * Part name + Storage direction ABSOLUTE MAXIMUM RATINGS Parameter Reverse Voltage Forward Current Power Dissipation Storage Temperature Range Operating Temperature Range Symbol VR IF PD TSTG TOP Rating 18 50 100 -55 to 150 -55 to +85 Unit Remarks V mA mW °C °C ELECTRICAL CHARCTERISTICS TA=25°C Parameter Symbol Units Conditions Value MIN TYP MAX VR 12 V Reverse Voltage IR=10µA IR 10.0 nA VR=10V Reverse Current C2 41.17 46.48 pF VR=2.0V, f=1MHz Diode Capacitance C8 16.00 21.34 pF VR=8.0V, f=1MHz RS 0.30 VR=1.0V, f=100MHz Series Resistance A 2.00 2.60 C2/C8 Capacitance Ratio * Capacitance measured in parallel connections. Back to Back Type2 * Diode Capactance measured with Agilent 4279A or equivalent instruments ( at OSC level 20±5mVrms ) Agilent 4279AOSC 4279AOSC 20±5mVrms * Resistance meter is Agilent 4291B 4291B or equivalent instruments. Agilent 4291B 4291B * The tolerance of element that is next to each other in same reel is wihthin 3% at C2, C5 and C8. C2C5C83 C2C5C83.0% 2003 FALL KV1720R/S KV1720R/S SEMICONDUCTOR SELECTION GUIDE DISCRETE DEVICES TYPICAL PREFORAMNCE CHARACTERISTICS Capacitance versus Reverse Voltage f=1MHz, TA=25°C Reverse Current versus Reverse Voltage TA=+25 / +55 / +85°C 100 1n TA=+85°C C, Capacitance(pF) IR, Reverse Current(A) 100p 2.0 3.0 4.0 5.0 6.0 VR, Reverse Voltage(V) 7.0 Q versus Reverse Voltage Q TA=25°C f=70MHz 1000 8.0 Q 100 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VR, Reverse Voltage(V) 7.0 1.06 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VR, Reverse Voltage(V) 0.3 0.1 50M 500M f, Frequency(Hz) Capacitance Temperature Coefficient versus Reverse Voltage f=1MHz, TA=25°C 1000 1.04 C(TA)/C(25°C) 1.02 TA=+85°C TA=+55°C TA=+25°C TA=-15°C TA=-55°C 1.00 0.98 0.96 0.94 0.0 2.0 Series Resistance versus Frequency VR=1.5V, TA=25°C 8.0 C(TA)/C(25°C) versus Reverse Voltage C(TA)/C(25°C) f=1MHz TA=-55 to +85°C TA=+25°C 1p 100f 0.0 f=100MHz f=200MHz 10p VR, Reverse Voltage(V) 1.0 1.0 2.0 3.0 4.0 5.0 6.0 VR, Reverse Voltage(V) 7.0 8.0 C/TA, Temperature Coefficient(ppm/°C) 10 0.0 TA=+55°C 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VR, Reverse Voltage(V) 7.0 8.0 2003 FALL