KV1450 KV1450TL 4279AOSC 4291B

FM KV1450 FEATURES Included Twin Element Very Small Tolerance of Element Being Next Device To Each Other Excellent Linearity of

Variable capacitance diode for FM tuning FM KV1450 KV1450 FEATURES Included Twin Element Very Small Tolerance of Element Being Next Device To Each Other Excellent Linearity of The CV Curve Extra Large Capacitance Ratio: A=4.6 to CLASSIFICATION Rank C C1 1 2 1 CV : A=4.6~ PACKAGE OUTLINE 3 4 5 MIN 59.15 60.30 61.50 62.75 64.00 MAX 60.90 62.10 62.75 64.65 65.90 Part name KV1450 KV1450 Package SOT23-3 Marking Pin configulation F5 ORDERING INFORMATION KV1450TL KV1450TL.Storage direction: TL(Left type) * Part name + Storage direction ABSOLUTE MAXIMUM RATINGS Parameter Reverse Voltage Forward Current Power Dissipation Storage Temperature Range Operating Temperature Range Symbol VR IF PD TSTG TOP Rating 18 50 100 -55 to 150 -55 to +85 Unit Remarks V mA mW °C °C ELECTRICAL CHARCTERISTICS TA=25°C Parameter Symbol Units Conditions Value MIN TYP MAX VR 16 V Reverse Voltage IR=10µA IR 100 nA VR=10V Reverse Current C1 59.15 62.5 65.9 pF VR=1V, f=1MHz C6 17.67 23.54 pF VR=6V, f=1MHz Diode Capacitance C9 10.77 13.26 pF VR=9V, f=1MHz Q Q 60 VR=3.0V, f=100MHz A 4.6 C1/C9 Capacitance Ratio * Capacitance measured in parallel connections. Back to Back Type2 * Diode Capactance measured with Agilent 4279A or equivalent instruments ( at OSC level 20±5mVrms ) Agilent 4279AOSC 4279AOSC 20±5mVrms * Resistance meter is Agilent 4291B 4291B or equivalent instruments. Agilent 4291B 4291B 2003 FALL KV1450 KV1450 SEMICONDUCTOR SELECTION GUIDE DISCRETE DEVICES TYPICAL PREFORAMNCE CHARACTERISTICS Capacitance versus Reverse Voltage f=1MHz, TA=25°C Reverse Current versus Reverse Voltage TA=+25 / +55 / +85°C 100 10n TA=+85°C C, Capacitance(pF) IR, Reverse Current(A) 1n TA=+55°C 100p 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VR, Reverse Voltage(V) Q versus Reverse Voltage Q 400 TA=25°C TA=+25°C 10p 1p 100f 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VR, Reverse Voltage(V) Series Resistance versus Frequency VR=1.5V, TA=25°C f=50MHz 0.8 f=70MHz Q VR, Reverse Voltage(V) f=100MHz 0.4 50M 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VR, Reverse Voltage(V) C(TA)/C(25°C) versus Reverse Voltage C(TA)/C(25°C) f=1MHz TA=-55 to +85°C 1000 1.04 1.03 C(TA)/C(25°C) 1.02 1.01 TA=+85°C TA=+55°C 1.00 TA=+25°C 0.99 0.98 500M Capacitance Temperature Coefficient versus Reverse Voltage f=1MHz, TA=25°C TA=-15°C TA=-55°C 0.97 0.96 0.95 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VR, Reverse Voltage(V) C/TA, Temperature Coefficient(ppm/°C) 1.05 f, Frequency(Hz) 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VR, Reverse Voltage(V) 2003 FALL