NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SEMICONDUCTOR KTC3227 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name C3227 C3227 KTC3227 2 Lot No. 816 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 K KEC CORP. 4 98.06.23 KEC hFE Grade Y O,Y Revision No : 00 1/1 ... | Original |
1 pages, |
KTC3227 c3227 data C3227* transistor C3227 transistor c3227 KTC3227 abstract |
| Abstract: KTC3227 KTC3227 TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 3. BASE W (Tamb=25) Collector current ICM: 400 mA Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA, IE=0 ... | Original |
1 pages, |
KTC3227 KTC3227 abstract |
| Abstract: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3227 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KTA1274 KTA1274. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 80 V Collector-Emitter Voltage VcEO 80 V Emitter Base Voltage Vebo 5 V Collector Current Ic 400 mA Emitter Current Ie -400 mA Collector Power , KEC 1/2 KTC3227 le " Vce 1 320 H 280 O HH 240 H fc 200 W S 160 P O 120 « o 80 ... | OCR Scan |
2 pages, |
KTA1274 KTC3227 KTC3227 abstract |
| Abstract: SEMICONDUCTOR TECHNICAL DATA KTC3227 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KT Al274. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 80 V Collector-Emitter Voltage VcEO 80 V Emitter Base Voltage Vebo 5 V Collector Current Ic 400 mA Emitter Current Ie -400 mA Collector Power Dissipation Pc 1 W , ) Classification 0:70~140, Y:120~240 1994. 5. 11 Revision No : 0 KEC 1/2 KTC3227 Ic ~ Vce o 0 3. °2.5 ... | OCR Scan |
2 pages, |
KTC3227 Al274 a1274 transistor A1274 KTC3227 abstract |
| Abstract: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3227 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KTA1274 KTA1274. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 80 V Collector-Emitter Voltage VcEO 80 V Emitter Base Voltage Vebo 5 V Collector Current Ic 400 mA Emitter Current Ie -400 mA Collector Power Dissipation Pc 1 W , ) Classification 0:70~140, Y:120~240 1994. 5. 11 Revision No : 0 KEC 1/2 KTC3227 le " Vce 1 320 H 280 O HH 240 H ... | OCR Scan |
2 pages, |
KTA1274 KTC3227 KTC3227 abstract |
| Abstract: SEMICONDUCTOR KTC3227 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. B FEATURES D A Complementary to KTA1274 KTA1274. DIM A B C D C ) Q RATING Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 400 mA Emitter Current IE -400 mA , Revision No : 0 1/2 KTC3227 h FE - I C I C - V CE 3.0 280 1k COMMON EMITTER Ta=25 C ... | Original |
2 pages, |
KTC3227 KTA1274 KTA1274 abstract |
| Abstract: SEMICONDUCTOR TECHNICAL DATA KTA1274 KTA1274 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KTC3227. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -80 V Collector-Emitter Voltage VcEO -80 V Emitter Base Voltage Vebo -5 V Collector Current Ic -400 mA Emitter Current Ie 400 mA Collector Power Dissipation Pc 1 W Junction Temperature Tj 150 °c Storage Temperature Range Tstg -55 ~150 °c P DEPTH:0.2 ! H »I n K t' ... | OCR Scan |
1 pages, |
KTC3227 KTA1274 KTA1274 abstract |
| Abstract: SEMICONDUCTOR KTA1274 KTA1274 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B FEATURES D A Complementary to KTC3227. DIM A B C D C ) Q RATING Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -400 mA Emitter Current IE 400 mA Collector Power Dissipation PC 1 W Junction Temperature Tj K UNIT 150 R SYMBOL ... | Original |
1 pages, |
KTC3227 KTA1274 KTC3227 abstract |
| Abstract: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1274 KTA1274 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KTC3227. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -80 V Collector-Emitter Voltage VcEO -80 V Emitter Base Voltage Vebo -5 V Collector Current Ic -400 mA Emitter Current Ie 400 mA Collector Power Dissipation Pc 1 W Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55 ~150 °c g 1 K r ... | OCR Scan |
1 pages, |
KTC3227 KTA1274 KTA1274 abstract |
| Abstract: mps8550 KEC 2N2904E 2N2904E Transistor KEC BC859 BC859 Transistor KEC F1B2CCI FRD KEC KDS135S KDS135S Diode 2N2906E 2N2906E Transistor KEC BC860 BC860 Transistor KEC KAC3301QN KAC3301QN Intergrated Circuit KEC KDS160 KDS160 Diode KEC KEC 2N3904 2N3904 Transistor KEC BCV71 BCV71 Transistor KEC KDB2151E KDB2151E Diode KEC KDS160E KDS160E Diode KEC 2N3904C 2N3904C Transistor KEC BCV72 BCV72 Transistor KEC KDB2151V KDB2151V Diode KEC KDS181 KDS181 Diode KEC 2N3904E 2N3904E Transisto ... | Original |
9 pages, |
KIA78R12PI KIA324P kia*278R33PI KIA78*pI KIA378R033 TIP35C transistor KIA78R05 ktd998 transistor TRANSISTOR mosfet 3V Zener diode KIA7906PI KHB9D0N90N circuit BC557 transistor alternator diode 2N2904E 2N2906E 2N2904E abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| KTC3227 Buy | 2SC3939 Buy | |
| KTC3227 Buy | 2SD1292 Buy | |
| KTC3227 Buy | 2SD1937 Buy | |
| KTC3227 Buy | 2SD2181 Buy | |
| KTC3227 Buy | 2SD667 Buy | |
| KTC3227 Buy | BC639 Buy |