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KTB1368 Datasheet

Part Manufacturer Description PDF Type
KTB1368 Korea Electronics General Purpose Transistor Original
KTB1368 Korea Electronics TRIPLE DIFFUSED PNP TRANSISTOR Scan
KTB1368 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
KTB1368 N/A Shortform Data and Cross References (Misc Datasheets) Scan
KTB1368V N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
KTB1368V N/A Shortform Data and Cross References (Misc Datasheets) Scan

KTB1368

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Good Linearity of hFE. C M N P Q R P S Complementary to KTD2060. G B E ) SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING (Ta=25 VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base , . 21 R:40 80, O:70 Revision No : 2 140, Y:120 240 1/2 KTB1368 h FE - I C -
Original

B1368

Abstract: TO-220IS SEMICONDUCTOR KTB1368 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B1368 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name B1368 KTB1368 3 hFE Grade Y O,Y 4 Lot No. 816 8 Revision No : 00 0 ~ 9 : 1900~1999 16 98.06.23 Year Week 16 : 16th Week 1/1 KEC
KEC
Original
TO-220IS b1368 transistor TO220IS

LM8550

Abstract: KTD2026 2SB566 Hitachi KTB1368 2N3906 Motorola 2N3906 2SA1173 NEC KTA1660 2SA1521 , 2SA1179 Sanyo KTA1504S 2SA1523 Sanyo KRA223M 2SB596 Toshiba KTB1368 2N5550 , KTB1368 2N5551 Motorola 2N5551 2SA1184 Toshiba KTA1659A 2SA1525 Sanyo KRA222M , 2SB703 NEC KTB1368 2SA684 Matsushita KTA1281 2SA1222 NEC KTA1275 2SA1587 , KTA1718L 2SA1597 Sanyo KRA106S 2SB725 Matsushita KTA1266 2SA769 Sanken KTB1368
-
Original
LM8550 KTD2026 2SC2320 equivalent 2sc2240 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A

KTB1368

Abstract: KTD2060 SEMICONDUCTOR KTB1368 TECHNICAL DATA triple diffused pnp transistor GENERAL PURPOSE APPLICATION. FEATURES â'¢ Good Linearity of Ilfe. â'¢ Complementary to KTD2060. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -80 V Collector-Emitter Voltage VcEO -80 V Emitter-Base Voltage Vebo -5 V Collector Current Ic -4 A Base Current Ib -0.4 A Collector Power Dissipation , , 0:70~ 140 , Y:120~240 1995. 2. 24 Revision No : 1 l/Cr 1/2 KTB1368 Ir - V CE O o -4.0 -3.2
-
OCR Scan
220IS

KTB1368

Abstract: KTD2060 SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S M N P Q R P Good Linearity of hFE. Complementary to KTD2060. G B E ) SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING (Ta=25 VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage , : 2 140, Y:120 240 1/2 KTB1368 h FE - I C I C - V CE 300 -140 -160 -180
-
Original

KTB1368

Abstract: KTD2060 _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA KTB1368 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES â'¢ Good Linearity of Iife. â'¢ Complementary to KTD2060. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -80 V Collector-Emitter Voltage VcEO -80 V Emitter-Base Voltage Vebo -5 V Collector Current Ic -4 A Base Current Ib , 1995. 2. 24 Revision No : 1 KEC 1/2 KTB1368 Ir " V CE < H W « O « o H 0 1 o u 4.0
-
OCR Scan

KTB1368

Abstract: KTD2060 SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U Good Linearity of hFE. E S G B Complementary to KTD2060. R T L ) SYMBOL RATING UNIT -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC , 140, Y:120 240 1/2 KTB1368 h FE - I C I C - V CE -140 -160 -180 -120 -80
KEC
Original

transistor W2W

Abstract: ktd2060 SEMICONDUCTOR KTD2060 TECHNICAL DATA triple diffused npn transistor GENERAL PURPOSE APPLICATION. FEATURES â'¢ Good Linearity of Iife. â'¢ Complementary to KTB1368. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 80 V Collector-Emitter Voltage VcEO 80 V Emitter-Base Voltage Vebo 5 V Collector Current Ic 4 A Base Current Ib 0.4 A Collector Power Dissipation (Tc=25°C) Pc 25 W Junction Temperature Tj 150 °c Storage Temperature Range Tstg -55 ~150 °c HP id. r rL
-
OCR Scan
transistor W2W W2W TRANSISTOR
Abstract: SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A Good Linearity of hFE. C M N P Q R P S Complementary to KTB1368. G B E ) SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING (Ta=25 VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 4 IB 0.4 A Collector Power Dissipation (Tc -
Original

ktd2060

Abstract: 522r SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C S M N P Q R P Good Linearity of hFE. Complementary to KTB1368. G B E ) SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING (Ta=25 VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 4 IB 0.4 A Collector Power Dissipation (Tc=25 ) PC
-
Original
522r

KTB1368

Abstract: ktd2060 SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U Good Linearity of hFE. E S G B Complementary to KTB1368. R T L ) SYMBOL RATING UNIT 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 4 A Base Current IB 0.4 A Collector Power Dissipation (Tc=25 ) PC 25 W
KEC
Original

25N20

Abstract: IC105 KEC SEMICONDUCTOR KTD2060 KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES â'¢ Good Linearity of Iife. â'¢ Complementary to KTB1368. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 80 V Collector-Emitter Voltage VcEO 80 V Emitter-Base Voltage Vebo 5 V Collector Current Ic 4 A Base Current Ib 0.4 A Collector Power Dissipation (Tc=25°C) Pc 25 W Junction Temperature Tj 150 °c Storage Temperature Range
-
OCR Scan
25N20 IC105 C251S

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 KTB1124 KTB1151 KTB1234T KTB1241 KTB1260 KTB1366 KTB1367 KTB1368 KTB1369 KTB1370 KTB1423 KTB1424 KTB1772
KEC
Original
alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ROOM3501

KF6N60

Abstract: 2SK3850 equivalent ) TO-126 TO-220IS TO-3P(H)IS TO-3P(N) (6.6X6.1) KTA1274 KTB1241 KTB1368 KTA1572 , 15.5+0.5 2.9Max - 1.5 _ 11.0 +0.3 3.5 -500 KTB1368 KTD2060 -80 -4 - 25 , 25 60 200 5 500 1 2A 200 - 3 5 500 KTD2060 KTB1368 80 4
KEC
Original
KF6N60 2SK3850 equivalent KF7N50 KF9N25 PANASONIC ZENER KIA278R12PI equivalent U10A2CIC U10A3CIC U10A6CDC U10A6CI U10A6CIC U20A3CFC

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 80 4 KTD2060 KTB1368 180 1.5 KTC4370A KTA1659A 80 6 KTC4511 KTA1725
KEC
Original
CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KRC102M KRC112M KTN2369 KTC3194 KTC3197 KTC3198

oz960

Abstract: khb*9D5N20P -3P-5 (6.6X6.1) KTA1274 MPSA56 KTB1241 BD140 KTB1368 KTA1725 KTB1370 MJD117 KTB2234 MJD117L
KEC
Original
oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 KIA7812A KIA78M05 PQ30RV31 KIA378R00PI LM324/N KIA324P/F TA79005

MN1280

Abstract: KGT50N60kda KTB1241 KTB1260 KTB1366 KTB1367 KTB1368 KTB1369 KTB1370 KTB1423 KTB1424 KTB1469 KTB1772 KTB2510
KEC
Original
KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor y4 smd transistor Z02W100V Z02W10V Z02W11V Z02W12V Z02W13V Z02W15V