NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| KTA2015 | Korea Electronics | General Purpose Transistor |
2 pages, |
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| KTA2015 | Korea Electronics | General Purpose Transistor |
2 pages, |
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| KTA2015 | Korea Electronics | EPITAXIAL PLANAR PNP TRANSISTOR |
2 pages, |
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| KTA2015W | Galaxy Semi-Conductor Holdings Limited | PNP Silicon Epitaxial Planar Transistor |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SEMICONDUCTOR KTA2015 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 Z4 1 2 Item Marking Description Device Mark Z KTA2015 hFE Grade 4 2, 4 * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B ... | Original |
1 pages, |
MARK Z KTA2015 transistor z4 51 marking Z4 KTA2015 abstract |
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| Abstract: KTA2015 SOT-323 KTA2015 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25) Collector current ICM: -0.5 A Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100uA, IE=0 -35 ... | Original |
1 pages, |
KTA2015 transistor ZY- KTA2015 abstract |
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| Abstract: KTA2015 PNP General Purpose Transistors P b Lead(Pb)-Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -500 mA Total Device Dissipation TA=25°C PD 100 mW Junction , 0.25 07-Apr-10 KTA2015 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ ... | Original |
2 pages, |
KTA2015 KTA2015 abstract |
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| Abstract: SEMICONDUCTOR TECHNICAL DATA KTA2015 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ilfe Linearity : hFE(2)=25(Min.) at Vce=-6V, Ic=-400mA. • Complementary to KTC4076 KTC4076. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -35 V Collector-Emitter Voltage VcEO -30 V Emitter-Base Voltage Vebo -5 V , ) Classification 0(2) :70 -140 Y(4) : 120 - 240 0:25Min. Y:40Min. 1998. 12. 4 Revision No : 1 KEC 1/2 KTA2015 ... | OCR Scan |
2 pages, |
KTC4076 KTA2015 KTA2015 abstract |
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| Abstract: _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA KTA2015 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE(2)=25(Min.) at Vce=-6V, Ic=-400mA. • Complementary to KTC4076 KTC4076. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -35 V Collector-Emitter Voltage VcEO -30 V Emitter-Base Voltage , ~140 Y(4):120~240 0:25Min. Y:40Min. 1998. 12. 4 Revision No : 1 KEC 1/2 KTA2015 le - VCE (LOW VOLTAGE ... | OCR Scan |
2 pages, |
KTA2015 KTC4076 KTA2015 abstract |
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| Abstract: _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA KTA2015 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE(2)=25(Min.) at Vce=-6V, Ic=-400mA. • Complementary to KTC4076 KTC4076. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -35 V Collector-Emitter Voltage VcEO -30 V , 1/2 KTA2015 le - VCE (LOW VOLTAGE REGION) H « O eh O O u 0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER ... | OCR Scan |
2 pages, |
KTC4076 KTA2015 KTA2015 abstract |
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| Abstract: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Excellent hFE Linearity DIM A B C J A 3 1 G Complementary to KTC4076 KTC4076. 0.3+0.10/-0.05 _ 2.10 + 0.20 G H 2 : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 , ) Classification 2008. 8. 29 O(2):70140 Y(4):120240 O:25Min. Y:40Min. Revision No : 2 1/2 KTA2015 ... | Original |
2 pages, |
KTC4076 KTA2015 datasheet abstract |
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| Abstract: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Excellent hFE Linearity DIM A B C D E D 3 1 G Complementary to KTC4076 KTC4076. J A 2 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 G H : hFE(2)=25(Min.) at VCE=-6V , 12. 4 O(2):70 140 Y(4):120 O:25Min. Y:40Min. Revision No : 1 240 1/2 KTA2015 h FE ... | Original |
2 pages, |
KTC4076 KTA2015 datasheet abstract |
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| Abstract: SEMICONDUCTOR TECHNICAL DATA KTC4076 KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Ilfe Linearity : hfe(2)=25(Min.) at Vce=6V, Ic=400mA. • Complementary to KTA2015. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 35 V Collector-Emitter Voltage VcEO 30 V Emitter-Base Voltage Vebo 5 V Collector Current Ic 500 mA Base Current Ib 50 mA Collector Power Dissipation Pc 100 mW Junction Temperature Tj ... | OCR Scan |
1 pages, |
npn power transistor ic 400ma KTC4076 KTA2015 KTC4076 abstract |
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| Abstract: KEC SEMICONDUCTOR KTC4076 KTC4076 KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iife Linearity : hfe(2)=25(Min.) at Vce=6V, Ic=400mA. • Complementary to KTA2015. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 35 V Collector-Emitter Voltage VcEO 30 V Emitter-Base Voltage Vebo 5 V Collector Current Ic 500 mA Base Current Ib 50 mA Collector Power Dissipation ... | OCR Scan |
1 pages, |
KTC4076 KTA2015 KTC4076 abstract |
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| Abstract: KEC SEMICONDUCTOR KTC4076 KTC4076 KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iife Linearity : hFE(2)=25(Min.) at Vce=6V, Ic=400mA. • Complementary to KTA2015. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 35 V Collector-Emitter Voltage VcEO 30 V Emitter-Base Voltage Vebo 5 V Collecter Current Ic 500 mA Base Current Iß 50 mA Collecter Power Dissipation Pc 100 mW ... | OCR Scan |
1 pages, |
KTC4076 KTA2015 KTC4076 abstract |
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| Abstract: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC4076W KTC4076W Pb Excellent HFE Linearity. Lead-free Complementary to KTA2015 Power dissipation.(PC=100mW) APPLICATIONS General purpose and switching application. SOT-323 ORDERING INFORMATION Type No. Marking KTC4076W KTC4076W Package Code WO/WY SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 35 ... | Original |
3 pages, |
Y MARKING transistor marking WY KTC4076W KTA2015 WY transistor KTA2015 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| KTA2015 | N/A | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FJX1182 | FJX1182YTF Buy | KTA2015O Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Direct | Small Signal | PNP Epitaxial Silicon Transistor |
| FJX1182 | FJX1182 Buy | KTA2015Y Buy | Jiangsu Changjiang Electronics Technology Co Ltd | Direct | Small Signal | PNP Epitaxial Silicon Transistor |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| KTA2015 Buy | 2SA1577 Buy | Rohm | BJT | General Purpose Transistor |
| KTA2015 Buy | 2SA1588 Buy | Toshiba | BJT | General Purpose Transistor |
| KTA2015 Buy | 2SA1608 Buy | NEC | BJT | General Purpose Transistor |
| KTA2015 Buy | 2SA1745 Buy | Sanyo | BJT | General Purpose Transistor |
| KTA2015 Buy | 2SB1219 Buy | Panasonic | BJT | General Purpose Transistor |
| KTA2015 Buy | 2SB1475 Buy | NEC | BJT | General Purpose Transistor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MMBT4403WT1G Buy | KTA2015O Buy | Jiangsu Changjiang Electronics Technology | Close |
| MMBT4403WT1G Buy | KTA2015Y Buy | Jiangsu Changjiang Electronics Technology | Close |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SA1586 Buy | KTA2015 Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification - USM - SOT-323 | Transistors |
| Part | Similar Part | Notes |