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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

KT 819 transistor

Catalog Datasheet MFG & Type PDF Document Tags

KT 819 transistor

Abstract: 2N2222A 338 D,P 9 BC 109C 9 25 1,2 1,2 2N 2N 2H KT 2 1 Ï KT KT KT SP 3055, KT 819 GM 3055, KT 819 GM 3055, KT 819 GM 819 GM 3055, KT 819 GM 818 GM 818 GM 818 GM 235, SP 137 D 2 1 5 3 3 3 3 3 3 3 3 !9 20 20 , 817 G KT 817 W KT 818 A KT 818 B KT 818 G KT 818 W KT 819 A KT 819 B KT 819 G KT 819 W KT 3107 A KT , 817 W KT 817 G KT 817 W KT 818 W KT 818 W KT 818 G KT 818 W KT 819 W KT 819 W KT 819 G KT 819 W KT , 1-6, siehe Abweichungen gegen über Originaltyp) Abweich ungen gegen über Originaltyp KT 326B KT
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KT 819 transistor

Abstract: KT819W Bestückung der Bndstufentransistören produziert. Variante 1 - LP 3412.00-51.00 Pür V 22o1jV 23o1 - KT 818 W, BDV-Nr. 83 7 332o Pür V 22o2;V 23o2 - KT 819 W, BDV-Nr. 83 2 3328 Variante 2 - LP 5413.00-62.00 Pür V , Einbauhinweise zum Anodenanschluß - Äquivalenzlösung für Transistor P 215 A - Neues Äquivalent für den Hoch , Einbau KT 837 W für P 214 G 6 4- 5 9-11 Bundfunk: tonica BZ 8o - Beparaturhinweise zum Speicher
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TRANSISTOR KT 838

Abstract: KT 819 transistor Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). unit:mm 2018B , , Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12099HA (KT)/41894HO (KOTO) AX-9521 No.4579­1/4 2SC4854 , 90.1 0.136 54.6 0.551 ­43.0 1200 0.257 ­108.4 2.940 81.9 0.153 54.3
SANYO Electric
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TRANSISTOR KT 838 KT 819 transistor

D 1413 transistor

Abstract: KT 819 transistor Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions â'¢Low noise : N F= l.0dB typ (f= IG H z). â'¢High gain : | S21 e 1 =12dB typ (f= l GHz). 2 â'¢High cutoff frequency : fj=7GHz typ , ., 1-10, 1 Chôme, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20599TH (KT)/20696YK/3I395YK (KOTO)TA-OI56 No , -51.2 1000 0.566 -150.7 2.995 81.9 0.125 35.7 0.434 -54.5 1200 0.555
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D 1413 transistor

KT 819 transistor

Abstract: c 4977 transistor Ordering number:EN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. unit:mm 2018B , TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12099HA (KT)/31395YK , 0.832 ­25.0 400 0.522 ­81.9 8.438 115.9 0.070 58.2 0.648 ­35.5 600
SANYO Electric
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c 4977 transistor TRANSISTOR KT 837 specifications ic 7405 50431

KT 819 transistor

Abstract: kt 784 Ordering number:EN5512A NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications Features Package Dimensions · High frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). : S21e2 , TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21599TH (KT)/91296YK , 6.428 81.9 0.089 73.7 0.149 ­72.3 500 0.359 169.3 5.293 77.6 0.110
SANYO Electric
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kt 784 55123 KT 818 09PF8 kt 814

2SC5374

Abstract: KT 819 transistor Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions · High gain : S21e =10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm 2106A [2SC5374] 0.75 0.6 0.4 0.3 , 21599TH (KT)/91296YK (KOTO) TA-0806 No.5535­1/5 2SC5374 No.5535­2/5 2SC5374 S Parameters , 81.9 0.155 29.9 0.361 ­74.3 1000 0.568 ­164.2 2.218 73.4 0.161 30.0
SANYO Electric
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Specification zo 607

2SC5231A

Abstract: 2sc5231 Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions unit:mm 2106A [2SC5231] 0.75 0.6 0.3 0.4 · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High , , TOKYO, 110-8534 JAPAN 20599TH (KT)/20696YK/31395YK (KOTO) TA-0156 No.5036­1/5 2SC5231 Continued , 0.120 35.8 0.475 ­51.2 1000 0.566 ­150.7 2.995 81.9 0.125 35.7 0.434
SANYO Electric
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2SC5231A marking c7

2SC5347

Abstract: ITR08157 2SC5347 Ordering number : EN5512C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features · High-frequency medium output amplification (VCE=5V, IC=50mA) : fT , -00000075 / 21599 TH (KT) / 91296 YK (KOTO) TA-0689 No.5512-1/6 2SC5347 Package Dimensions unit : mm (typ , 174.9 6.428 81.9 0.089 73.7 0.149 -72.3 500 0.359 169.3 5.293 77.6
SANYO Electric
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ITR08157 ITR08158 ITR08159 ITR08160

ITR08169

Abstract: 2SC5374 Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB · High gain : typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. unit:mm 2106A [2SC5374] 0.75 0.6 0.3 0.4 3 , JAPAN 30105TN (PC)/21599TH (KT)/91296YK (KOTO) TA-0806 No.5535­1/5 2SC5374 IC - VCE 35 IC , 2.716 81.9 0.155 29.9 0.361 ­74.3 1000 0.568 ­164.2 2.218 73.4 0.161
SANYO Electric
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ITR08169 ITR08168 ITR08170 ITR08171 ITR08172

2SC5231

Abstract: ITR07963 Ordering number:ENN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Ultrasmall , JAPAN 30105TN (PC)/20599TH (KT)/20696YK/31395YK (KOTO) TA-0156 No.5036­1/5 2SC5231 Continued from , 0.120 35.8 0.475 ­51.2 1000 0.566 ­150.7 2.995 81.9 0.125 35.7 0.434
SANYO Electric
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ITR07963 ITR07964 ITR07965 ITR07966 ITR07967
Abstract: Ordering number:ENN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Ultrasmall package permiting applied , TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30105TN (PC)/20599TH (KT , 116.7 101.4 90.4 81.9 74.2 67.5 62.0 55.9 50.9 | S12 | 0.038 0.067 0.098 0.112 0.120 0.125 0.131 0.137 SANYO Electric
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TRANSISTOR KT 837

Abstract: a1046 Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB · High gain : typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. unit:mm 2106A [2SC5374] 0.75 0.6 0.3 , , TOKYO, 110-8534 JAPAN 30105TN (PC)/21599TH (KT)/91296YK (KOTO) TA-0806 No.5535â'"1/5 2SC5374 IC - , '"65.6 800 0.581 â'"153.9 2.716 81.9 0.155 29.9 0.361 â'"74.3 1000 0.568 â
SANYO Electric
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a1046 A1684 transistor A1046

KT 819 transistor

Abstract: 2SC4868 Ordering number:ENN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. unit:mm 2018B 0.4 , , Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA (KT)/31395YK (KOTO) TA-0245 No.5043­1/4 , ­81.9 8.438 115.9 0.070 58.2 0.648 ­35.5 600 0.411 ­104.5 6.284 101.5
SANYO Electric
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ITR07675 ITR07676 ITR07677 ITR07678

KT 819 transistor

Abstract: TRANSISTOR KT 838 Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Package Dimensions unit , ., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA (KT)/41894HO (KOTO) AX , | 7.561 5.976 4.789 3.976 3.365 2.940 2.600 2.340 2.135 1.989 S21 147.5 125.9 111.3 99.3 90.1 81.9 75.1
SANYO Electric
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Abstract: Ordering number : EN5512B 2SC5347 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347 Features · High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications High-frequency medium output amplification (VCE=5V, IC=50mA) : fT , , TOKYO, 110-8534 JAPAN 72006AB MS IM TC-00000075 / 21599 TH (KT) / 91296 YK (KOTO) TA-0689 No.5512-1/6 , 81.9 77.6 73.5 69.9 66.4 62.9 59.4 56.5 53.0 S12 0.027 0.047 0.068 0.089 0.110 0.130 0.151 0.171 0.191 SANYO Electric
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CE1M

Abstract: TRANSISTOR KT 838 Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). , Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA (KT)/41894HO , ­95.4 3.365 90.1 0.136 54.6 0.551 ­43.0 1200 0.257 ­108.4 2.940 81.9
SANYO Electric
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CE1M ITR07592 ITR07593 ITR07594 ITR07595

Philips ECG 812

Abstract: ECG1110 17E 0 hbSBTSfl 000403a b T-74-05-01 let Top* Titg Kt mWi C MVIEI IEIATIHC , limit of Instantaneous value, while the power transistor Is cut-off. ECG1110 816 P H IL IP S E , i n n i 819 ECG1110
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Philips ECG 812 transistor KT 816 ODO4034 T-74- 000403S T-74-05-

specifications ic 7405

Abstract: KT 819 transistor Ordering number:ENN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2018B [2SC4868 , , TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA (KT)/31395YK (KOTO) TA-0245 No.5043­1/4 2SC4868 5 3 2 , 0.522 0.411 0.342 0.304 0.278 0.263 0.254 0.252 0.253 S11 ­49.0 ­81.9 ­104.5 ­122.0 ­136.2 ­150.8
SANYO Electric
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Abstract: Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347 Features · High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications High-frequency medium output amplification (VCE=5V, IC=50mA) : fT , (KT) / 91296 YK (KOTO) TA-0689 No.5512-1/6 2SC5347 Package Dimensions unit : mm (typ) 7007A-004 , 3.774 3.334 2.995 2.725 2.494 2.307 S21 105.9 93.3 86.8 81.9 77.6 73.5 69.9 66.4 62.9 59.4 56.5 53.0 S12 SANYO Electric
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