KST63/64 KST63 KST64 PW300 97REF 508REF

KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum

KST63/64 KST63/64 KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage -30 V Emitter-Base Voltage -10 IC V Collector Current -500 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES Parameter Collector-Emitter Breakdown Voltage Test Condition IC= -100, VBE=0 Min. -30 Max. Units V ICBO Collector Cut-off Current VCE= -30V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -10V, IC=0 -100 nA hFE * DC Current Gain V VCE= -5V, IC= -10mA : KST63 KST63 : KST64 KST64 : KST63 KST63 : K ST64 VCE= -5V, IC= -100mA 5K 10K 10K 20K VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -0.1mA -1.5 VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -100mA -2.0 fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA f=100MHz 125 V MHz * Pulse test: PW300 PW300µs, Duty Cycle2% Marking Code Type KST63 KST63 KST64 KST64 Mark 2U 2V Marking 2U ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KST63/64 KST63/64 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000k hFE, DC CURRENT GAIN VCE = -5V 100k 10k 1k -1 -10 -100 -1000 -10 IC = 1000 IB V BE(sat) -1 VCE(sat) -0.1 -0.01 -1 IC[mA], COLLECTOR CURRENT -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IC [mA], COLLECTOR CURRENT VCE = -5V 100 10 1 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation -2.8 VCE = -5V 100 10 1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A1, July 2001 KST63/64 KST63/64 Package Demensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 0.023 0.96~1.14 0.97REF 97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 508REF Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3