KSR2001 KSR1001 - Datasheet Archive

 

PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) · Switching circuit, Inverter, Interface

 

KSR2001 KSR2001 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) · Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R1=4.7 , R2=4.7 ) · Complement to KSR1001 KSR1001 Ï TO-92 Ï Î) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol Rating -50 -50 -10 -100 300 150 -55 ~ 150 VCBO VCEO VEBO IC PC TJ T STG Unit V V V mA mW Î Î 1. Emitter 2. Collector 3. Base Î) ELECTRICAL CHARACTERISTICS (TA=25 Characteristic Symbol Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance BVCBO BVCEO ICBO hFE VCE(sat) fT COB Input Off Voltage Input On Voltage Input Resistor Resistor Ratio VI(off) VI(on) R1 R1/R2 Test Conditions À À IC= -10 , IE=0 IC= -100 , IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -10mA IC= -10mA, IB= -0.5mA VCE= -5mA, IC= -10V VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100 VCE= -0.3V, IC= -20mA À Min Collector Base Emitter Max Unit V V -50 -50 -0.1 20 -0.3 200 5.5 -0.5 3.2 0.9 Equivalent Circuit Typ 4.7 1 -3 6.2 1.1 À V MHz pF V V Ï KSR2001 KSR2001 PNP EPITAXIAL SILICON TRANSISTOR