KSR1009 KSR2009 27TYP 86MAX - Datasheet Archive

 

KSR1009 Switching Application (Bias Resistor Built In) · Switching circuit, Inverter, Interface circuit, Driver Circuit

 

KSR1009 KSR1009 KSR1009 KSR1009 Switching Application (Bias Resistor Built In) · Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R=4.7K) · Complement to KSR2009 KSR2009 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 40 Units V VCEO VEBO Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 IC V Collector Current 100 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IE=1mA, IB=0 ICBO Collector Cut-off Current VCB=30V, IE=0 hFE DC Current Gain VCE=5V, IC=1mA VCE (sat) Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor ©2001 Fairchild Semiconductor Corporation Units V 0.1 VCE=10V, IC=5mA R Max. µA 40 VCB=10V, IE=0 f=1MHz fT Typ. V IC=10mA, IB=1mA Cob Min. 40 100 600 0.3 3.70 250 3.2 4.7 V pF MHz 6.2 K Rev. A2, July 2001 KSR1009 KSR1009 Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 5V R = 4.7K 1000 100 VCE(sat)[mV], SATURATION VOLTAGE 10000 IC = 10IB R = 4.7K 100 10 1 10 0.1 1 10 100 Ic[mA], COLLECTOR CURRENT 1 10 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 PC[mW], POWER DISSIPATION 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 o T a[ C], AMBIENT TEMPERATURE Figure 3. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, July 2001 KSR1009 KSR1009 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP 27TYP [1.27 ±0.20] 1.27TYP 27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 ­0.05 1.02 ±0.10 3.86MAX 86MAX 3.60 +0.10 0.38 ­0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST® OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER® SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET® VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3