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KSD201 Datasheet

Part Manufacturer Description PDF Type
KSD2012 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSD2012 Samsung Electronics Transistor Function Guide Scan
KSD2012G Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSD2012GTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSD2012Y Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSD2012YTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSD2012YYDTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original

KSD201

Catalog Datasheet MFG & Type PDF Document Tags

KSD201

Abstract: ksb1366 KSB1366 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER · Complement to KSD2012 TO-220F ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol V cB O Rating Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature - 60 - 60 -7 -3 V V V A A W W VcEQ V ebo lc Ib Pc Pc -0 .5 2 25 150 - 55 ~ 150
-
OCR Scan
KSD201

D880 voltage regulator

Abstract: B0244C lc (A) 1 MIN 60 MAX 200 hre KSD1406 KSD2012 KSD2058 KSD1273 KSD1944 KSD1408 KSD1362 KSD1588 KSC158 , KSD1046 KSB13Ô6 KSD2012 KSD1273 KSD1044 4A 5A KSD1362 KSB1017 KSD1406 KSB1068 KSD1589 KSB1022 KSD1417
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OCR Scan
KSD601 B0244C BD64C D880 voltage regulator TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR KST06 KST05 BCW71 BCX70G BCX70H BCX70J
Abstract: KSD2012 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POW ER AMPLIFIER · Complément to KSB1366 ABSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation {Tc=25'C) Junction Temperature Storage Temperature Symbol Vcao V ceo V ebo Rating 60 60 7 3 0.3 25 150 -5 5 -1 5 0 Unit V , 0 -3 2 0 363 ELECTRONICS KSD2012 STATIC CHARACTERISTIC NPN EPITAXIAL SILICON TRANSISTOR -
OCR Scan

KSC1330

Abstract: KSC945 KSB1023 KSD1413 KSA1614 KSB1015 KSD1046 KSB1366 KSD2012 KSD1273 KSD1944 KSC5027F KSC5367F 4A
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OCR Scan
KSC838 EDX53 BD53A KSE13009F KSC1330 KSC945 KSA733 KSE 13007 L BD139 KSC2223 KSC2715 KSC1623 KSC1674 KSC1674/KSC1675 KSC838/KSC1676

2SC3133 cross reference

Abstract: Hitachi 2sc281 Min. KSD-2016-000 1 2 PIN Connections 1. Anode 2. NC 3. Cathode 1 SDZ11V , - 600 VR=8.4V - - 0.1 µA Reverse current IR KSD-2016-000 2 SDZ11V Electrical Characteristic Curves Fig. 1 PD-Ta Fig. 2 IZ-VZ KSD-2016-000 3 AUK
-
OCR Scan
2SA1026 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model KSD2012 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER â'¢ Complement to KSB1366 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VcbO 60 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage Vebo 7 V Collector Current lc 3 A Base Current Ib 0.3 A Collector Power Dissipation (Tc=25"C) Pc 25 W Junction Temperature Tj 150 "C Storage , l"lFE1 100 ~200 150 ~320 KSD2012 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC DC CURRENT
Fairchild Semiconductor
Original
FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model TN3440A TN4033A TN5415A TN6705A TN6707A TN6714A

Y1 SOT-23

Abstract: KSD201 KSD2012 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Symbol VcBO VCEO V ebo lc Ib Pc T, T stg Rating 60 60 7 3 0.3 25 150 -5 5 ^1 5 0 Unit V V V A A W °C CC ELECTRICAL CHARACTERISTICS , Classification hFE1 363 ELECTRONICS KSD2012 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC DC
AUK
Original
Y1 SOT-23 ksd2016

KSD2012

Abstract: KSB1366 KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER â'¢ Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage - 60 -7 V V IC Collector Current(DC) -3 A IB Base Current PC Collector Dissipation (Ta=25°C) - 0.5
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OCR Scan

ksd2012

Abstract: -220(F) Type VcEO lc 1.5A 3A KSB1023 KSD1413 KSA 1614 KSB 1015 KSD1406 KSB1366 KSD2012 KSD1273 KSD1944
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OCR Scan
Abstract: KSD1616 KSD1621 KSD1691 KSD1692 KSD1943 KSD1944 KSD2012 KSD2058 KSD5018 KSD5041 KSD5060 KSD5061 KSD5062 Fairchild Semiconductor
Original

ksd 250v 10a

Abstract: B0X34C Fairchild company Product status/pricing/packaging Product KSD2012Y KSD2012YTU Product status Full , KSD2012 KSD2012 Low Frequency Power Amplifier · Complement to KSB1366 1 TO-220F 2 , Semiconductor International Rev. A, February 2000 KSD2012 Typical Characteristics 4 Ic[A , KSD2012 Package Demensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 , Rev. E Product Folder - Fairchild P/N KSD2012 - NPN Epitaxial Silicon Transistor SEARCH
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OCR Scan
ksd 250v 10a B0X34C ksd 202 ksa 3.3 IR 733 sa992 812/KSC SA812/KSC KSA812/KSC1623 KSC945/KSC815 KSC1675/KSC945 KSA733/KSC945

KSD 166

Abstract: KSD 168 Min. KSD-2010-000 1 2 PIN Connections 1. Anode 2. NC 3. Cathode 1 SDZ6V2 , 1300 VR=4V - - 1 µA Reverse current IR KSD-2010-000 2 SDZ6V2 Electrical Characteristic Curves Fig. 2 IZ-VZ Fig. 1 PD-Ta KSD-2010-000 3 AUK
-
OCR Scan
KSC1845 KSD 166 KSD 168 kst 232 ksc2328 KST1623 KSA473 KSA539 KSA542 KSA614 KSA642 KSA643

KSD2012Y

Abstract: ksd2012 KSB1366 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER â'¢ C om plem ent to KSD2012 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO Sym bol - 60 V C ollecto r E m itter Voltage VcEO - 60 V Em itter Base Voltage V ebo -7 V C ollecto r C urrent lc - 3 A Base C urrent Ib C ollecto r D issipation (T a=25°C) Pc - 0.5 A 2 W C ollecto r D issipation (Tc=25°C) Pc 25 W
Fairchild Semiconductor
Original

Z4 SOT23

Abstract: code z4 KSD1406 KSD2012 KSD2058 KSD1273 KSD1944 KSD1408 KSD1362 KSD1588 KSC3158 KSB1097 KSB1017 NPN KSC3296 Device
AUK
Original
Z4 SOT23 code z4 marking Z4 ksd2010 diode ZENER Z4
Abstract: Vce (V) 5 lc (A) 1 MIN 60 MAX 200 hFE KSD1406 KSD2012 KSD2058 KSD1273 KSD1944 KSD1408 KSD1362 KSD1588 -
OCR Scan

ksd 180/60

Abstract: ksd 180 Min. KSD-2012-000 1 2 PIN Connections 1. Anode 2. NC 3. Cathode 1 SDZ7V5 , VR=6V - - 0.5 µA Reverse current IR KSD-2012-000 2 SDZ7V5 Electrical Characteristic Curves Fig. 2 IZ-VZ Fig. 1 PD-Ta KSD-2012-000 3 AUK
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OCR Scan
ksd 180/60 ksd 180 tip142 se130 ksd 250 KSC2682 KSC3502 KSC3503 KSC3953 KSC2258 KSC2258A

transistor 13003 AD

Abstract: ksd-180 ~0.60 -0.03 +0.05 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. KSD-2014-000 1 2 , KSD-2014-000 2 SDZ9V1 Electrical Characteristic Curves Fig. 1 PD-Ta Fig. 2 IZ-VZ The , publication are subject to change without notice. KSD-2014-000 3 AUK
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OCR Scan
transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 BCX70K BCX71G BCX71H BCX71J BCX71K KST1623L3
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