500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : KSC2331YTA Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0429 Price Each : $0.0499
Part : KSC2331YBU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 236,000 Best Price : $0.04 Price Each : $0.05
Part : KSC2331YTA Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 367,500 Best Price : $0.06 Price Each : $0.07
Part : KSC2331YTA Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 2,000 Best Price : $0.0683 Price Each : $0.0683
Part : KSC2331YTA Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 1,775 Best Price : $0.0717 Price Each : $0.1122
Shipping cost not included. Currency conversions are estimated. 

KSC2331 Datasheet

Part Manufacturer Description PDF Type
KSC2331 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
KSC2331 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original
KSC2331 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
KSC2331 N/A Shortform Data and Cross References (Misc Datasheets) Scan
KSC2331 Samsung Electronics NPN LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING) Scan
KSC2331O Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331OBU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331OBU Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 700MA TO-92L Original
KSC2331OTA Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331OTA Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 700MA TO-92L Original
KSC2331R Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331-TO-92L Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original
KSC2331Y Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331YBU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331YBU Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 700MA TO-92L Original
KSC2331YSHTA Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331YSHTA Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 700MA TO-92L Original
KSC2331YTA Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
KSC2331YTA Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 700MA TO-92L Original
Showing first 20 results.

KSC2331

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: KSC2331OTA KSC2331YTA KSC2331YSHTA KSC2331YBU KSC2331OBU Product status Full Production Full Production Full , KSC2331 KSC2331 Low Frequency Amplifier & Medium Speed Switching · · · · Complement to KSA931 , 2001 KSC2331 Typical Characteristics 200 180 240 VCE = 2V 200 IC[mA], COLLECTOR , KSC2331 Package Demensions TO-92L 4.90 ±0.20 8.00 ±0.20 1.70 ±0.20 1.00 ±0.10 0.70MAX , Rev. H3 Product Folder - Fairchild P/N KSC2331 - NPN Epitaxial Silicon Transistor SEARCH Fairchild Semiconductor
Original
Abstract: KSC2331 - NPN Epitaxial Silicon Transistor December 2011 KSC2331 NPN Epitaxial Silicon Transistor Features · · · · · Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High , Y 120 ~ 240 © 2011 Fairchild Semiconductor Corporation KSC2331 Rev. B0 1 www.fairchildsemi.com KSC2331 - NPN Epitaxial Silicon Transistor Typical Performance Characteristics 200 180 240 , KSC2331 Rev. B0 2 www.fairchildsemi.com TRADEMARKS The following includes registered and Fairchild Semiconductor
Original
Abstract: KSC2331 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING · Complement to KSA931 · High Collector-Base Voltage V c b o = 8 0 V · Collector Currant lc=700mA · Collector Dissipation Pc=1W NPN EPITAXIAL SILICON TRAN SISTO R TO-92L ABSOLUTE MAXIMUM RATINGS (TA =25t) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation , 120-240 2 15 ELECTRONICS KSC2331 STATIC CHARACTERISTIC NPN EPITAXIAL SILICON TRANSISTOR -
OCR Scan
Abstract: KSC2331 NPN Epitaxial Silicon Transistor Features â'¢ â'¢ â'¢ â'¢ â'¢ Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High Collector-Base Voltage : V =80V CBO Collector Current : C=700mA I Collector Dissipation : P =1W C TO-92L 1 1. Emitter 2. Collector 3 , © 2011 Fairchild Semiconductor Corporation KSC2331 Rev. B0 www.fairchildsemi.com 1 KSC2331 , KSC2331 Rev. B0 25 www.fairchildsemi.com 2 KSC2331 â'" NPN Epitaxial Silicon Transistor Fairchild Semiconductor
Original
Abstract: KSC2331 KSC2331 Low Frequency Amplifier & Medium Speed Switching · · · · Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum , Corporation Rev. A1, June 2001 KSC2331 Typical Characteristics 200 240 VCE = 2V 200 160 , Derating Rev. A1, June 2001 KSC2331 Package Demensions TO-92L 0.70MAX. 1.00 ±0.10 Fairchild Semiconductor
Original
Abstract: KSC2331 KSC2331 Low Frequency Amplifier & Medium Speed Switching · · · · Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum , Corporation Rev. A2, September 2002 KSC2331 Typical Characteristics 200 240 VCE = 2V 200 , Derating Rev. A2, September 2002 KSC2331 Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 Fairchild Semiconductor
Original
Abstract: KSC2331 TO-92L Transistor (NPN) TO-92L 1.EMITTER 4.700 5.100 2.COLLECTOR 7.800 8.200 Features 1 2 3 3.BASE 0.600 0.800 Complement to KSA931 High collector-Base Voltage: VCBO=80V Collector current: IC=700mA Collector dissipation: PC=1W 0.350 0.550 13.800 14.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter , =50mA CLASSIFICATION OF hFE Rank Range R 40-80 O 70-140 Y 120-240 KSC2331 TO-92L Transistor (NPN) - -
Original
Ic-700mA TO 92L NPN Transistor TO-92L
Abstract: KSC2331 KSC2331 TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25) 3. BASE Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100uA, IE=0 80 V WEJ Electronic
Original
TO-92MOD
Abstract: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L · Complement to KSA931 · High Collector-Base Voltage VCBO=80V · Collector Current IC=700mA · Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating 80 60 8 700 1 150 -55 ~ +150 VCBO VCEO VEBO IC PC TJ T STG Collector-Base , } } V V MHz pF KSC2331 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronics Samsung Electronics
Original
Abstract: KSC2331 TO-92MOD Transistor (NPN) 1.EMITTER 1 2 3 2.COLLECTOR 3.BASE TO-92MOD 5.800 6.200 8.400 8.800 0.900 1.100 Features 0.400 0.600 13.800 14.200 Complement to KSA931 High collector-Base Voltage: VCBO=80V Collector current: IC=700mA Collector dissipation: P =1W C 0.000 0.380 1.500 TYP 2.900 3.100 1.600 0.400 4.700 0.500 5.100 MAXIMUM RATINGS (TA=25 unless otherwise noted , 40-80 O 70-140 Y 120-240 KSC2331 TO-92MOD Transistor (NPN) - -
Original
Abstract: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING â'¢ Complement to KSA931 â'¢ High Collector-Base Voltage Vcao=80V â'¢ Collector Current le=700mA â'¢ Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic Symbol Rating Unit VcBO Vceo V ebo ic Pc 80 60 8 700 1 150 -5 5 -+ 1 5 0 V V V mA W Collector-Base \A , QQ2 4 7 7 Q KSC2331 NPN EPITAXIAL SILICON TRANSISTOR BASE-EMITTER ON VOLTAGE STATIC -
OCR Scan
Abstract: SAMSUNG SEMICONDUCTOR INC mE 0 | 7^4142 OOObISM 3 | KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING â'¢ Complement to KSA931 â'¢ High Collector-Base Voltage Vc»o=80V â'¢ Collector Current lc =700mA â'¢ Collector Dissipation Pc=1W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Ullage Vcao 80 V Collector-Emitter , 120-240 SAMSUNG SEMICONDUCTOR 194 SAMSUNG SEMICONDUCTOR INC me D | 711,4142 000^25 S KSC2331 NPN -
OCR Scan
160i T-29-23
Abstract: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching · Complement to KSC2331 · Collector-Base Voltage : VCBO= -80V · Collector Power Dissipation : PC=1W 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage , Switching applications New products q Complement to KSC2331 Product selection and q Collector-Base Voltage Fairchild Semiconductor
Original
transistor HFE 400 1w PW350 KSA931YBU KSA931YTA KSA931OBU KSA931OTA
Abstract: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L · Complement to KSA931 · High Collector-Base Voltage VCBO=80V · Collector Current IC=700mA · Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol Rating 80 60 8 700 1 150 -55 ~ +150 VCBO VCEO VEBO IC PC TJ TSTG Collector-Base , 120-240 Rev. B ©1999 Fairchild Semiconductor Corporation KSC2331 NPN EPITAXIAL SILICON Fairchild Semiconductor
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2331 TOï¼ï¼™ï¼'MODã'' ã'' TRANSISTORï¼ NPN ) 1.EMITTER FEATURE Power dissipation PCM : 1 Wï¼Tamb=25â"ƒï¼‰ Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range T J ,T stg: -55â"ƒ to +150â"ƒ ELECTRICAL CHARACTERISTICSï¼Tamb=25â"ƒ Parameter Symbol 2.COLLECTOR 3.BASE ã'' ã'' ï¼'ï¼'ï¼"ã'' unless Test Jiangsu Changjiang Electronics Technology
Original
500TYP 059TYP
Abstract: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING · · · · C om plem ent to KSA931 High Col lector-Base Voltage V Cbo = 8 0 V C ollector C urrent lc=700m A C ollector Dissipation Pc=1 W TO -92L ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent C , iconductor Corporatio n tm KSC2331 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC -
OCR Scan
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR (NPN) 1.EMITTER FEATURE Complement to KSA931 High Collector-Base Voltage: VCBO=80V Collector Current: IC=700mA Collector Dissipation: PC=1W 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage Jiangsu Changjiang Electronics Technology
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR NPN 1.EMITTER FEATURE Power dissipation PCM : 1 W Tamb=25 Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Tamb=25 Symbol 2.COLLECTOR 3.BASE unless Test otherwise specified conditions MIN TYP MAX UNIT A Jiangsu Changjiang Electronics Technology
Original
Abstract: KSA931 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L · Complement to KSC2331 · Collector-Base Voltage VCBO= -80V · Collector Dissipation PC=1W ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Rating -80 -60 -8 -700 1 150 -55 ~ +150 VCBO VCEO VEBO IC PC TJ T STG Unit Samsung Electronics
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2331 TO-92MOD TRANSISTOR (NPN) 1.EMITTER FEATURE Complement to KSA931 High collector-Base Voltage: VCBO=80V Collector current: IC=700mA Collector dissipation: PC=1W 2.COLLECTOR 3.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 123 Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage Jiangsu Changjiang Electronics Technology
Original
Abstract: NPN PNP KSC2328A KSC2331 KSC2500 KSA928A KSA931 1.1.5 TYP 2 6 1 600 1.1.4 -
OCR Scan
ksd999 KSP66 2N4401 KSP2222A 2N4400 2N3903 2N3904
Abstract: KSA931 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING · Complement to KSC2331 · Collector-Base Voltage: VCBO= -80V · Collector Dissipation: PC=1W TO-92L ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ T STG Rating -80 -60 -8 -700 1 150 -55 ~ +150 Unit V V V mA W °C °C 1 Fairchild Semiconductor
Original
Showing first 20 results.