NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| KSC2331 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
4 pages, |
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| KSC2331 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
3 pages, |
Original | |
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| KSC2331 | Jiangsu Changjiang Electronics Technology Co., Ltd. | TRANSISTOR NPN |
1 pages, |
Original | |
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| KSC2331 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
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| KSC2331 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| KSC2331 | Samsung Electronics | NPN LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING) |
2 pages, |
Scan | |
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| KSC2331O | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
4 pages, |
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| KSC2331OBU | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
4 pages, |
Original | |
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| KSC2331OTA | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
4 pages, |
Original | |
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| KSC2331R | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
4 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: KSC2331 KSC2331 TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25) 3. BASE Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100uA, IE=0 80 V ... | Original |
1 pages, |
TO-92MOD ksC2331 KSC2331 KSC2331 abstract |
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| Abstract: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L · Complement to KSA931 KSA931 · High Collector-Base Voltage VCBO=80V · Collector Current IC=700mA · Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating 80 60 8 700 1 150 -55 ~ +150 VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage , 30 Unit 0.2 0.86 50 8 0.1 0.1 240 0.7 1.20 } } V V MHz pF KSC2331 NPN ... | Original |
2 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: KSC2331 - NPN Epitaxial Silicon Transistor December 2011 KSC2331 NPN Epitaxial Silicon Transistor Features · · · · · Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 KSA931 High , ~ 140 Y 120 ~ 240 © 2011 Fairchild Semiconductor Corporation KSC2331 Rev. B0 1 www.fairchildsemi.com KSC2331 - NPN Epitaxial Silicon Transistor Typical Performance Characteristics 200 180 , KSC2331 Rev. B0 2 www.fairchildsemi.com TRADEMARKS The following includes registered and ... | Original |
3 pages, |
KSC2331 KSC2331 abstract |
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| Abstract: SAMSUNG SEMICONDUCTOR INC mE 0 | 7^4142 OOObISM 3 | KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • Complement to KSA931 KSA931 • High Collector-Base Voltage Vc»o=80V • Collector Current lc =700mA • Collector Dissipation Pc=1W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Ullage Vcao 80 V Collector-Emitter Voltage Vceo 60 V , SAMSUNG SEMICONDUCTOR 194 SAMSUNG SEMICONDUCTOR INC me D | 711,4142 000^25 S KSC2331 NPN EPITAXIAL ... | OCR Scan |
2 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: SAMSUNG SEMICONDUCTOR INC mE 0 | 7^4142 OOüblSM 3 | KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • Complément to KSA931 KSA931 • High Collector-Base Voltage Vc»o = 80V • Collector Current lc =700mA • Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characterlstlc Symbol Rating Unit Collector-Base Mittage Vcao 80 V Collector-Emltter Voltage Vceo 60 V Emitter-Base , 1711,4142 OOObiaS S KSC2331 NPN EPITAXIAL SILICON TRANSISTOR T-29-23 T-29-23 STATIC CHARACTERISTIC BASE-EMITTER ... | OCR Scan |
2 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: KSC2331 KSC2331 Low Frequency Amplifier & Medium Speed Switching · · · · Complement to KSA931 KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute , Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2331 Typical Characteristics 200 , ], AMIBIENT TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSC2331 Package ... | Original |
4 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: KSC2331 KSC2331 Low Frequency Amplifier & Medium Speed Switching · · · · Complement to KSA931 KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute , Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC2331 Typical Characteristics 200 , ], AMIBIENT TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 KSC2331 Package Demensions ... | Original |
4 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: KSC2331 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L · Complement to KSA931 KSA931 · High Collector-Base Voltage VCBO=80V · Collector Current IC=700mA · Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol Rating 80 60 8 700 1 150 -55 ~ +150 VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage , 120-240 Rev. B ©1999 Fairchild Semiconductor Corporation KSC2331 NPN EPITAXIAL SILICON ... | Original |
3 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR NPN 1.EMITTER FEATURE Power dissipation PCM : 1 W Tamb=25 Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Tamb=25 Symbol 2.COLLECTOR 3.BASE unless Test otherwise specified conditions MIN TYP MAX UNIT A ... | Original |
1 pages, |
KSC2331 KSC2331 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR (NPN) 1.EMITTER FEATURE Complement to KSA931 KSA931 High collector-Base Voltage: VCBO=80V Collector current: IC=700mA Collector dissipation: PC=1W 2.COLLECTOR 3.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 123 Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage ... | Original |
2 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2331 TO-92MOD TRANSISTOR (NPN) 1.EMITTER FEATURE Complement to KSA931 KSA931 High collector-Base Voltage: VCBO=80V Collector current: IC=700mA Collector dissipation: PC=1W 2.COLLECTOR 3.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 123 Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage ... | Original |
2 pages, |
KSC2331 KSA931 KSC2331 abstract |
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| Abstract: KSA931 KSA931 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92L · Complement to KSC2331 · Collector-Base Voltage VCBO= -80V · Collector Dissipation PC=1W ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Rating -80 -60 -8 -700 1 150 -55 ~ +150 VCBO VCEO VEBO IC PC TJ T STG Unit ... | Original |
2 pages, |
PW350 KSC2331 KSA931 KSA931 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| KSC2331 | N/A | Silicon NPN | |
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| KSC2331 | N/A | Low Power, General Purpose | |
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| KSC2331-O | N/A | Low Power, General Purpose | |
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| KSC2331-R | N/A | Low Power, General Purpose | |
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| KSC2331-Y | N/A | Low Power, General Purpose | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| KSC1008 | KSC1008CYBU Buy | KSC2331 Buy | Fairchild | Direct | Small Signal | NPN Epitaxial Silicon Transistor |
| KSC1008 | KSC1008YBU Buy | KSC2331O Buy | Fairchild | Direct | Small Signal | NPN Epitaxial Silicon Transistor |
| NTE Electronics Part | Industry Part |
| NTE24 Buy | KSC2331 Buy |
| NTE24 Buy | KSC23310 Buy |
| NTE24 Buy | KSC2331-0 Buy |
| NTE24 Buy | KSC2331-O Buy |
| NTE24 Buy | KSC2331Y Buy |
| NTE24 Buy | KSC2331-Y Buy |
| NTE24 Buy | KSC2331YT Buy |
| Part | Similar Part | Notes |