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Part : KSA539CYTA Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0216 Price Each : $0.0229
Part : KSA539CYTA Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 12,242 Best Price : $0.05 Price Each : $0.05
Part : KSA539YBU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 9,000 Best Price : $0.04 Price Each : $0.04
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KSA539 Datasheet

Part Manufacturer Description PDF Type
KSA539 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
KSA539 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
KSA539 N/A Shortform Data and Cross References (Misc Datasheets) Scan
KSA539CO Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539CR Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539CY Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539CYBU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539CYTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539O Fairchild Semiconductor Low Frequency Amplifier Original
KSA539OTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539R Fairchild Semiconductor Low Frequency Amplifier Original
KSA539Y Fairchild Semiconductor Low Frequency Amplifier Original
KSA539YBU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539YTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
KSA539YTA_NL Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original

KSA539

Catalog Datasheet MFG & Type PDF Document Tags

KSC815

Abstract: KSA539CYTA KSA539OTA KSA539YBU KSA539CYBU Product status Full Production Full Production Full Production Full , KSA539 KSA539 Low Frequency Amplifier · · · · Complement to KSC815 Collector-Base Voltage , Rev. A1, June 2001 KSA539 Typical Characteristics -200 -180 1000 VCE = -1V IC[mA , Corporation Rev. A1, June 2001 KSA539 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N KSA539
Fairchild Semiconductor
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KSA539

Abstract: KSC815 KSA539 KSA539 Low Frequency Amplifier · · · · Complement to KSC815 Collector-Base Voltage: VCBO = -60V Collector Power Dissipation: PC = 400mW Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon , Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA539 Typical Characteristics 1000 , Semiconductor Corporation Rev. A1, June 2001 KSA539 Package Demensions TO-92 +0.25 4.58 ±0.20
Fairchild Semiconductor
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KSA539

Abstract: KSA539 KSA539 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM: 0.4 1. EMITTER W (Tamb=25) 2. BASE Collector current ICM: -0.2 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=- 100µA , IE
WEJ Electronic
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7d471

Abstract: 1N4148 chip LDODRV LDO driving output. This is connected to the base of external TR (KSA539) 9 ERROR LDO , the FAN7563: Tlow = -25°C, Thigh=85°C 2. Tested with KSA539 1 3. S = -R 4 mA mV FAN7563 , temperature range for the FAN7563: Tlow = -25°C, Thigh=85°C 2. Tested with KSA539 1 3. S = -R 6 , =100mA, with KSA539) 9 FAN7563/FAN7564 Mechanical Dimensions Package Dimensions in millimeters 8
Fairchild Semiconductor
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FAN7564 7d471 1N4148 chip 250VAC CAP FAN REGULATOR 1N5822 KA5H0165RN 14-SOP 14SOP FAN7563D FAN7564D

KSA539

Abstract: KSA539 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER â'¢ Complement to KSC81S â'¢ Collector-Base Voltage VCeo = -60V â'¢ Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -60 V Collector-Emitter Voltage VcEO -45 V Emitter-Base Voltage Vebo -5 V Collector Current lc -200 mA Collector Dissipation Pc 400 mW Junction , Classification H 0 Y hFE 40-80 70-140 120-240 61 ELECTRONICS m 7^^4142 QQ24bHQ tiBO KSA539 PNP EPITAXIAL
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OCR Scan

KSA539

Abstract: KSA539 LOW FREQUENCY AMPLIFIER · Complement to KSC8I5 · Collector-Base Voltage Vcao - -60V · Collector Dissipation Pc « 400mW PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TWaSTC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol Vcso Rating Unit V V VcEO Veso le Pc Tj T , KSA539 STATIC CHARACTERISTIC PNP EPITAXIAL SILICON TRANSISTOR BA ftM M TTBR ON VOLTAME v w (V t c
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OCR Scan

1N4148 chip

Abstract: 7d471 connected to the base of external TR (KSA539) 9 ERROR LDO dropout error flag. This keeps the error , KSA539 330k Vo 60.45k 20k 6 Ra Rb Co 10uF FAN7563/FAN7564 Typical , 14 16 Vcc[V] Figure 12. Start-up Characteristic (IO=100mA, with KSA539) 9 FAN7563
Fairchild Semiconductor
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battery charger 48v 10A KA5H0165R UF4007 N7564

KSC815Y

Abstract: KSC815 KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator · Collector-Base Voltage : VCBO=60V · Complement to KSA539 · Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base , Optoelectronics [EMarkets and mail] q Collector-Base Voltage : V CBO =60V applications q Complement to KSA539 This
Fairchild Semiconductor
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KSC815YTA KSC815Y KSC815COBU KSC815CYBU KSC815YBU KSC815OTA KSC815OBU

ksa539

Abstract: KSA539 -0.2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free FEATURE TO-92 Low Saturation Medium Current Application. Complementary to KSC815 CLASSIFICATION OF hFE Product-Rank KSA539-R KSA539-O KSA539-Y Range 40~80 70~140 120~240 1 Emitter 2 Base 3 Collector Base 2 3 REF. Collector A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30
SeCoS
Original

KSC815

Abstract: KSC815 LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR · Complement to KSA539 · Collector-Base Voltage V c b o =60V NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25'C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol V cbo V ceo V ebo lc Rating 60 45 5 Unit V V V mA mW r Pc Tj T sto 200 400 150 -5 5 -1 5 0 V ELECTRICAL CHARACTERISTICS (TA
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OCR Scan
TA-25

transistor 2N3563

Abstract: 2SK30 KSA539-O KSA539-R KSA539-Y KSA542-G KSA542-O KSA542-R KSA542-Y KSA642-O KSA642-R KSA642-Y KSA643-G KSA643-O , Fairchild Device KSR1209 KSR1109 KSR1210 KSR1110 KSR1211 KSR1111 KSR1212 KSR1112 KSR1205 KSR1105 KSA539-O KSA539-R KSA539-Y KSA542-G KSA542-O KSA542-R KSA542-Y KSA642-O KSA642-R KSA642-Y KSA643-G KSA643-O KSA643-R , 2N7053 KSA733 KSA733 KSA733 KSA643 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA539 KSA733 KSA733 KSA733 KSA539 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA539 KSA643 KSA954 KSA733 KSA733 KSA643
Fairchild Semiconductor
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transistor 2N3563 2SK30 2n3819 cross reference 2SA726 2sk41e transistor 2sc1417 2N669B 2N696 2N697 2N699 2N699A 2N706

LB 122 transistor To-92

Abstract: LB 122 NPN TRANSISTOR SAMSUNG SEMICONDUCTOR INC 14E D | 71b4142 OOObflSl 2 | KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR â'¢ Complement to KSA539 â'¢ Collector-Base Voltage Vcao=i60V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage Vceo 60 V Collector-Emitter Voltage Vera 45 V Emitter-Base Voltage Vebo 5 V Collector Current lc 200 mA Collector Dissipation Pc 400 mW Junction Temperature Ti 150 °C Storage Temperature Tstg
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OCR Scan
LB 122 transistor To-92 LB 122 NPN TRANSISTOR LB 122 transistor samsung l300 L300 TRANSISTOR A52

ksa539

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO â'" 92 KSC815 TRANSISTOR (NPN) 1.EMITTER FEATURES Low Collector Current Complement To KSA539 Low Frequency Amplifier & High Frequency Oscillator 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC
Jiangsu Changjiang Electronics Technology
Original
Abstract: KSA539 LOW FREQUENCY AMPLIFIER · Complement to KSC8l5 · Collector-Base Voltage VCBO = -60V · Collector Dissipation PC = 400mW PNP EPITAXIAL SILICON TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ T STG ) Unit V V V mA mW Rating -60 -45 -5 -200 400 150 -55 ~ 150 1. Emitter 2. Base 3 Fairchild Semiconductor
Original
KSA542
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO â'" 92 KSA539 TRANSISTOR (PNP) 1.EMITTER FEATURES Low Saturation Medium Current Application Complement to KSC815 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.2 A Jiangsu Changjiang Electronics Technology
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2SC815

Abstract: KSA539 Transistors 2SC815 LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR â'¢ Complement to KSA539 â'¢ Collector-Base Voltage VCBo =60V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 60 V Collector-Emitter Voltage VcEO 45 V Emitter-Base Voltage Vebo 5 V Collector Current lc 200 mA Collector Dissipation Pc 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55-150 °C USHA (INDIA) LTD 1. Emitter 2. Base 3. Collector STATIC
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OCR Scan
1FT2 VCBO-60V 2sc815

KSC815

Abstract: ksa539 KSC815 0.2A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of â'-Câ' specifies halogen & lead-free TO-92 FEATURES Low Collector Current Complementary To KSA539 Low Frequency Amplifier & High Frequency Oscillator CLASSIFICATION OF hFE Product-Rank KSC815-R KSC815-O KSC815-Y KSC815-G Range 40~80 70~140 120~240 200~400 1Emitter 2Base 3Collector Collector 3 2 REF. Base A B C D E
SeCoS
Original
Abstract: KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR â'¢ Com plement to KSA539 â'¢C o llecto r-B ase Voltage Vcso=60V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO 60 45 5 200 400 150 -5 5 -1 5 0 V V V mA mW °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VcEO V ebo lc Pc Tj Tstg °c -
OCR Scan
DG24714

KSC815

Abstract: KSA539 KSC815 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 · Complement to KSA539 · Collector-Base Voltage VCBO=60V ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Rating Unit 60 45 5 200 400 150 -55 ~ 150 V V V mA mW °C °C
Fairchild Semiconductor
Original

KSA539

Abstract: KSA542 KSA539 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER â'¢ Complement to KSC8I5 â'¢ Collector-Base Voltage Vcbo = -60V â'¢ Collector Dissipation Pc = 400mW ABSOLUTE MAXIMUM RATINGS (TA=25TC) Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage VcEO -45 V Emitter-Base Voltage Vebo -5 V Collector Current lc -200 mA Collector Dissipation Pc 400 mW Junction Temperature Tj 150 r Storage Temperature Tstg -55 - 150 x: ELECTRICAL CHARACTERISTICS (Ta
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OCR Scan
Abstract: the base of external TR (KSA539) LDO dropout error flag. This keeps the error signal off until the , IREF MONIT 100nF GND CHAFB ERROR LDODRV 100k KSA539 330k 60.45k 20k Ra Vo Co 10uF Rb , Figure 12. Start-up Characteristic (IO=100mA, with KSA539) 9 FAN7563/FAN7564 Mechanical Fairchild Semiconductor
Original
FAN7563DTF AN-4110

2SC3133 cross reference

Abstract: Hitachi 2sc281 KSA1175 KSA992 KSA1174 KSA539 KSA643 KSA1150 KSA1013 KSA473 KSB834 KSB708 2SA1096A M ATS U S H IT A , KSA539 KSA643 KSA953 KSA954 KSB596 KSB596 KSA733 KSA643 KSA953 TYPE 2SA774A 2SA776 2SA778 2SA779 , KSA733 KSA733 KSA733 KSA733 KSA733 KSA539 M ATS U SH ITA KSB810 M ATS U SH ITA KSA733 M ATS U SH , H IB A H ITA C H I N.E.C J.R.C TO S H IB A SA N K EN S A N K EN SA N K EN SANKEN KSA539 KSA733 , ITS U B ISH I J.R.C J.R.C J.R.C J.R.C J.R.C SA NY O SANYO J.R.C J.R.C KSA733 KSA539 KSA733 KSA733
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OCR Scan
2SA1026 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013

250VAC CAP FAN REGULATOR

Abstract: 7D471 KSA539 1 3. S = -R 4 FAN7563/FAN7564 Electrical Characteristic (Continued) (FAN7564) (VCC = , FAN7563: Tlow = -25°C, Thigh=85°C 2. Tested with KSA539 1 3. S = -R 6 FAN7563/FAN7564 Typical
Fairchild Semiconductor
Original
K5A539 332 1KV 400v 10uF KA539 fairchild opto
Abstract: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator â'¢ Collector-Base Voltage : VCBO=60V â'¢ Complement to KSA539 â'¢ Suffix â'-Câ' means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Value 60 Collector-Base Voltage Units V V VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage Fairchild Semiconductor
Original
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