KQB4N50 - Datasheet Archive

 

IC SMD Type 500V N-Channel MOSFET KQB4N50 + .1 1 .2 7 -00.1 TO-263 Features 3.4A, 500 V. RDS(ON) = 2.7 @ VGS = 10 V Unit: mm +0.1

 

Transistors IC SMD Type 500V N-Channel MOSFET KQB4N50 KQB4N50 + .1 1 .2 7 -00.1 TO-263 Features 3.4A, 500 V. RDS(ON) = 2.7 @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 + .2 5 .2 8 -00.2 100% avalanche tested lmproved dv/dt capability 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 1 5 .2 5 -00.2 Fast switching + .2 2 .5 4 -00.2 + .2 8 .7 -00.2 Low Crss(typical 6.0pF) 5 .6 0 Low gate charge (typical 10nC) +0.2 0.4-0.2 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDSS Drain to Source Voltage 500 V 3.4 A 2.15 A 13.6 A Drain Current Continuous (TC=25 ) ID Drain Current Continuous (TC=100 ) Drain Current Pulsed *1 IDM V Gate-Source Voltage VGSS 30 Single Pulsed Avalanche Energy*2 EAS 260 mJ Avalanche Current *1 IAR 3.4 A Repetitive Avalanche Energy *1 EAR 7 mJ Peak Diode Recovery dv/dt *3 dv/dt 4.5 V/ns PD 3.13 W 70 W Power dissipation @ TA=25 Power dissipation @ TC=25 PD 0.56 Derate above 25 Operating and Storage Temperature TJ, TSTG TL W/ -55 to150 300 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case R JC 1.79 /W Thermal Resistance Junction to Ambient *4 R JA 40 /W Thermal Resistance Junction to Ambient R JA 62.5 /W *1 Repetitive Rating:Pulse width limited by maximum junction temperature *2 l=40mH,IAS=3.4A,VDD=50V,RG=25 ,Startion TJ=25 *3 ISD 3.4A,di/dt 200A/ S,VDD BVDSS,Startiong TJ=25 *4 When mounted on the minimum pad size recommended (PCB Mount) www.kexin.com.cn 1 Transistors IC SMD Type KQB4N50 KQB4N50 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Testconditons Min Typ Max 500 VGS = 0 V, ID = 250 A V 0.38 ID = 250 A, Referenced to 25 Unit mV/ Gate-Body Leakage Current,Forward VDS = 500 V, VGS = 0 V 1 A VDS = 400 V, TC=125 Zero Gate Voltage Drain Current 10 A IGSSF VGS = 30 V, VDS = 0 V 100 nA VGS =-30 V, VDS = 0 V -100 nA 5.0 V IDSS Gate-Body Leakage Current,Reverse IGSSR Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 1.7A Forward Transconductance gFS Input Capacitance Coss 2.0 Ciss Output Capacitance 3.0 VDS = 50 V, ID = 1.7A * 2.7 2.9 S 350 VDS = 25 V, VGS = 0 V,f = 1.0 MHz 230 pF 55 45 pF Reverse Transfer Capacitance Crss 6 6 pF Turn-On Delay Time td(on) 12 30 ns Turn-On Rise Time tr 45 100 ns Turn-Off Delay Time td(off) VDD = 250 V, ID = 3.4A,RG=25 * 20 50 ns Turn-Off Fall Time tf 30 70 ns Total Gate Charge Qg 10 13 nC Gate-Source Charge Qgs Gate-Drain Charge VDS = 400 V, ID = 3.4A,VGS = 10 V * Qgd 2.5 nC 4.7 nC Maximum Continuous Drain-Source Diode Forwrad Current IS 3.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 13.6 A Drain-Source Diode Forward Voltage VSD Diode Reverse Recovery Time Diode Reverse Recovery Current Qrr * Pulse Test: Pulse Width 2 trr 2.0% www.kexin.com.cn 300 s, Duty Cycle VGS = 0 V, IS = 3.4 A VGS = 0 V,dIF/dt = 100 A/ 1.4 s,IS=3.4A* V 210 ns 1.15 nC