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Part : KMM532256CV-08 Supplier : Samsung Semiconductor Manufacturer : Bristol Electronics Stock : 100 Best Price : $8.6250 Price Each : $15.00
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KMM5322200BW/BWG-6

Catalog Datasheet MFG & Type PDF Document Tags

1004CL

Abstract: 44V16 Page ( FP ) Mode 5 V [T6M~Based j- f - ftM x 3 g -|lM x 3 6 "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' KMM5361203BW/8 WG-6 H KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 K , -1 KMM5362203BW/BWG-6 H KMM5362203BW/BWG-7 KMM5324000BK/BKG-5 ~ T ~ [ KMM5324000BK/BKG-6 H H ~ KMM5324000BK/BKG~T^ KMM53241QOBK/BKG-5 H '^M M 5324100B K /B KG -6 ~ |- j KMM5324100BK/BKG-7 ~ H KMM5364003BK/BKG-6 ~H~KMM5364003BK/BKG-7 ~ H~KIVlM5364103BK/BKG-6 j~ | KMM5364103BK/BKG-7 h^1M 532 800 0B K /B
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1004CL 44V16 44C40 366F KM48V2100B 364C KMM5321200BW/BWG-6 KMM5322200BW/BWG-6 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK
Abstract: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The â'¢ Part Identification - KMM5322200BW (1024 , Operation Samsung KMM5322200BW consists of four CMOS 1M x 16 bit DRAMs in 42-pin SOJ packages mounted , circuit board fo r each DRAM. The KMM5322200BW is a Single In-line Memory Module with edge connections -
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KMM5322200BW/BWG KMM5322200BWG 00E25SG KM416C1200BJ

KMM5322200BW/BWG-7

Abstract: KMM5322200BW/BWG Min Max 304 284 a 304 284 184 164 _4 304 284 20 . J0_ 0.4 -6 - 7 - 6 -7 . , DRAM MODULE KMM5322200BW/BWG Fast Page Mode Preliminary KMM5322200BW/BWG 2Mx32 DRAM SIMM, 1K , connector sockets. FEATURES · Part Identification - KMM5322200BW (1024 cycles/16ms Ref, SOJ, Solder) - KMM5322200BW G (1024 cycles/16ms Ref, SOJ, Gold) · Fast Page Mode Operation · C X 5-before-R £5 refresh , RM A NC E RANG E Speed -6 -7 ; ' tRAC 60ns 70ns j tCAC 15ns 20ns tRC 110ns 130ns PIN CO N FIG U R
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5322200BW M5322200BW

HA509

Abstract: H14E KMM5322200BW/BWG Min Max Unit ICC1 - 6 - 7 - 304 284 mA mA ICC2 - 8 mA ICC3 - 6 - 304 mA - 7 - , DRAM MODULE Preliminary KMM5322200BW/BWG KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION The Samsung KMM5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS 1Mx16 bit DRAMs in 42 , mounted on the printed circuit board for each DRAM. The KMM5322200BW is a Single In-line Memory Module
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HA509 H14E D019 0G2252G

S/KMM5322200BW/BWG-6

Abstract: M53222 .; KMM5322200BW/BWG Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 H(L) IO(L) VOH VOL Speed -6 -7 Min . , . (C) 1996 Samsung Electronics Printed in Korea. Page ; 6 ( KMM5322200BW ) 7^4142 0031143 , K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM , a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four , uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5322200BW is
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S/KMM5322200BW/BWG-6 M53222 G0311S0

KMM364C12

Abstract: KMM53616000AK KMM5361205BW/BWG -. KMM5322200AW/AWG . KMM5322200BW/BWG , -.70 1Mx36, EDO, 1Mx16 ba sed - 76 1Mx36, EDO, 1 M x 1 6 based , 1 6 based 4Mx32, FP, 4Mx4 based 4Mx32, EDO, 4Mx4 based 8Mx32, FP, 8Mx8 based 215 221 227 234 240 246
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KMM364C12 KMM53616000AK 1MX16 KMM5321200AW/AWG KMM5321200BW/BWG KMM5321204AW/AWG KMM5321204BW/BWG M5361203AW/AWG KMM5361203BW/BWG

KMM5321200B

Abstract: KMM5324104BK KMM5322200AW/AWG KMM5322200BW/BWG ÍF P .S G , PPD FP, SG, PPD EDO, SG, PPD I EDO, SG, PPD
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KMM5321200B KMM5324104BK M15361203A KMM5361205AW/AWG KMM53612058W/BWG 16MX4 KMM366F124AJ KMM374F124AJ