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KM736V687A Datasheet

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KM736V687A Samsung Electronics 64Kx36-Bit Synchronous Burst SRAM
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465.17 Kb

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KM736V687A-7 Samsung Electronics 64Kx36-Bit Synchronous Burst SRAM
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16 pages,
465.27 Kb

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KM736V687A-8 Samsung Electronics 64Kx36-Bit Synchronous Burst SRAM
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465.27 Kb

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KM736V687A-9 Samsung Electronics 64Kx36-Bit Synchronous Burst SRAM
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465.27 Kb

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KM736V687AT-7 Samsung Electronics 64K x 36 Synchronous SRAM
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15 pages,
939.03 Kb

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KM736V687AT-8 Samsung Electronics 64K x 36 Synchronous SRAM
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15 pages,
939.03 Kb

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KM736V687AT-9 Samsung Electronics 64K x 36 Synchronous SRAM
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15 pages,
939.03 Kb

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KM736V687A

Catalog Datasheet Results Type PDF Document Tags
Abstract: KM736V687A-7 KM736V687A-8 KM736V687A-9 UNIT MIN MAX MIN MAX MIN MAX - 12 - , KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM , 3.0 KM736V687A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES , 3.3V+0.3V/-0.165V for 3.3V I/O The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory , controls Power Down State and reduces Stand-by current regardless of CLK. The KM736V687A is implemented ... Original
datasheet

16 pages,
465.27 Kb

KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A km736v6 KM736V687A abstract
datasheet frame
Abstract: ) Parameter Symbol KM736V687A-7 Min KM736V687A-8 Max Min KM736V687A-9 Max Min Max , PRELIMINARY 64Kx36 Synchronous SRAM KM736V687A Document Title 64Kx36-Bit Synchronous Burst , KM736V687A 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION · Synchronous Operation. · , TTL-Level Three-State Output. · 100-TQFP-1420A 100-TQFP-1420A The KM736V687A is 2,359,296 bits Synchronous Static , pin controls Power Down State and reduces Stand-by current regardless of CLK. The KM736V687A is ... Original
datasheet

15 pages,
438.96 Kb

KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A KM736V687A abstract
datasheet frame
Abstract: CHARACTERISTICS(TA=0 to 70°C, VDD=3.3V+0.3V/-0.165V) PARAMETER SYMBOL KM736V687A-7 KM736V687A-8 KM736V687A-9 UNIT MIN MAX MIN MAX MIN MAX - 12 - ns Cycle Time tCYC , KM736V687A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL , /-0.165V for 3.3V I/O The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory designed , Down State and reduces Stand-by current regardless of CLK. The KM736V687A is implemented with SAMSUNGs ... Original
datasheet

16 pages,
470.92 Kb

KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A 100-TQFP-1420A KM736V687A abstract
datasheet frame
Abstract: , Vdd=3.3V+o.3V/-o.165V) Parameter Symbol KM736V687A-7 KM736V687A-8 KM736V687A-9 Unit Min Max Min Max Min , KM736V687A PRELIMINARY 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM Revision , 0.1 ELECTRONICS This Material Copyrighted By Its Respective Manufacturer KM736V687A PRELIMINARY , TTL-Level Three-State Output. • 100-TQFP-1420A 100-TQFP-1420A FAST ACCESS TIMES GENERAL DESCRIPTION The KM736V687A is 2 , regardless of CLK. The KM736V687A is implemented with SAMSUNG s high performance CMOS technology and is ... OCR Scan
datasheet

15 pages,
939.03 Kb

KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A CS21 KM736V687A abstract
datasheet frame
Abstract: to Power Up V dd = 3 .3V + o.3V /-o.16 5V ) KM736V687A-8 Min 10 3 3 KM736V687A-7 Symbol tCYC tCD tOE tLZC KM736V687A-9 Min 12 3 3 Min 8 .5 Max 7 .5 3 .5 Max 8 3 .5 Max - , KM736V687A Document Title 64Kx36-Bit Synchronous Burst SRAM 64Kx36 Synchronous SRAM , Rev 3.0 KM736V687A 64Kx36-Bit Synchronous Burst SRAM FEATURES Synchronous Operation. On-Chip , KM736V687A PIN CONFIGURATION(TOPVIEW) w ,-0 , ü ,-Q (Ü w Ij 1 3 64Kx36 Synchronous SRAM CL 1 3 ... OCR Scan
datasheet

16 pages,
1109.38 Kb

vivax KM736V687A KM736V687A abstract
datasheet frame
Abstract: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC C7C1334-10AC IS61NW6432-8TQ IS61NW6432-8TQ C7C1334-5AC C7C1334-5AC IS61NW6432-5TQ IS61NW6432-5TQ IS61NW6432-6TQ IS61NW6432-6TQ, C7C1334-7AC C7C1334-7AC IS61NW6432-7TQ IS61NW6432-7TQ C7C1335-5 C7C1335-5.5AC IS61C632A-5TQ IS61C632A-5TQ C7C1335-7AC C7C1335-7AC IS61C632A-7TQ IS61C632A-7TQ C7C1335-8 C7C1335-8.5AC IS61C632A-8TQ IS61C632A-8TQ C7C1337-5 C7C1337-5.5AC IS61C632A-5TQ IS61C632A-5TQ C7C1337-5AC C7C1337-5AC IS61C632A-5TQ IS61C632A-5TQ C7C1337-8 C7C1337-8.5AC IS61C632A-8TQ IS61C632A-8TQ CY62126V CY62126V IS61LV6416 IS61LV6416 CY62126V-55BAC CY62126V-55BAC IS61LV6416-20B IS61LV6416-20B CY62126V-55ZC CY62126V-55ZC IS61LV6416-20T IS61LV6416-20T CY62126V-70BAC CY62126V-70BAC IS61LV6416-20B IS61LV6416-20B CY ... Original
datasheet

116 pages,
651.13 Kb

KM616U1000BLTI-10L K6R4016V1C-JI20 KM68U512BLTGI-10L KM718V949T GVT72024A8J-10L K6R4016V1C-FI10 MT58L32L32PT-7.5 IS62LV1024LL-70T1 KM62256BLG-7 C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ C7C1334-10AC abstract
datasheet frame
Abstract: PRELIMINARY KM736V687 KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION · · · · · · · · · · · · The KM736V687 KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals. It can be organized as 64K words of 36 bits. And it integrates address and control registers, a 2-bit burst address ... Original
datasheet

15 pages,
456.46 Kb

KM736V687-9 KM736V687-8 KM736V687-10 KM736V687 64kx36 KM736V687 abstract
datasheet frame
Abstract: KM736V687 KM736V687 64Kx36-Bit Synchronous Burst SRAM FEATURES · · · · · · · · · · Synchronous Operation. On-Chip Address Counter. VWite Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V ±5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. Asynchronous Output Enable Control. ADSP, AbSC, ADV Burst Control Pins. LBO Pin allows a choice of either a interleaved burst or a linea ... OCR Scan
datasheet

7 pages,
394.4 Kb

KM736V687 100-TQFP-1420A KM736V687 abstract
datasheet frame
Abstract: KM736V687 KM736V687 64Kx36-Bit Synchronous Burst SRAM FEATURES ии Synchronous Operation. On-Chip Address Counter. - Write Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V и и 5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. . Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. ии Asynchronous Output Enable Control. ии ADSP, ADSC, ADV Burst Control Pins. ии LBO Pin allows a choice of either a interleaved burst or a ... OCR Scan
datasheet

14 pages,
1131.29 Kb

KM736V687 KM736V687 abstract
datasheet frame
Abstract: PRELIMINARY KM736V687 KM736V687 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release May. 27. 1997 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronic ... Original
datasheet

15 pages,
418.37 Kb

KM736V687-9 KM736V687-8 KM736V687-10 KM736V687 100TQFP KM736V687 abstract
datasheet frame
Abstract: PRELIMINARY KM736V687 KM736V687 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release May. 27. 1997 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronic ... Original
datasheet

15 pages,
453.92 Kb

KM736V687-9 KM736V687-8 KM736V687-10 KM736V687 100TQFP KM736V687 abstract
datasheet frame

Shortform Datasheet Search Results

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KM736V687AT7 Samsung Electronics Synchronous Static RAM - Linear or interleaved burst

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KM736V687AT8 Samsung Electronics Synchronous Static RAM - Linear or interleaved burst

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KM736V687AT9 Samsung Electronics Synchronous Static RAM - Linear or interleaved burst

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ISSI Cross Reference Results

ISSI Part Industry Part Manufacturer Description
IS61LF6436A-8.5TQI Buy KM736V687AT-9 Buy Samsung Semiconductor
IS61SF6436 Buy KM736V687A Buy Samsung Semiconductor 2Mb (64K x 36) 3.3v Synchronous SRAM Flowthrough
IS61SF6436-8.5TQ Buy KM736V687AT-9 Buy Samsung Semiconductor 2Mb (64K x 36) 3.3v Synchronous SRAM Flowthrough