NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| KM736V687A | Samsung Electronics | 64Kx36-Bit Synchronous Burst SRAM |
16 pages, |
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| KM736V687A-7 | Samsung Electronics | 64Kx36-Bit Synchronous Burst SRAM |
16 pages, |
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| KM736V687A-8 | Samsung Electronics | 64Kx36-Bit Synchronous Burst SRAM |
16 pages, |
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| KM736V687A-9 | Samsung Electronics | 64Kx36-Bit Synchronous Burst SRAM |
16 pages, |
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| KM736V687AT-7 | Samsung Electronics | 64K x 36 Synchronous SRAM |
15 pages, |
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| KM736V687AT-8 | Samsung Electronics | 64K x 36 Synchronous SRAM |
15 pages, |
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| KM736V687AT-9 | Samsung Electronics | 64K x 36 Synchronous SRAM |
15 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: KM736V687A-7 KM736V687A-8 KM736V687A-9 UNIT MIN MAX MIN MAX MIN MAX - 12 - , KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM , 3.0 KM736V687A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES , 3.3V+0.3V/-0.165V for 3.3V I/O The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory , controls Power Down State and reduces Stand-by current regardless of CLK. The KM736V687A is implemented ... | Original |
16 pages, |
KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A km736v6 KM736V687A abstract |
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| Abstract: , Vdd=3.3V+o.3V/-o.165V) Parameter Symbol KM736V687A-7 KM736V687A-8 KM736V687A-9 Unit Min Max Min Max Min , KM736V687A PRELIMINARY 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM Revision , 0.1 ELECTRONICS This Material Copyrighted By Its Respective Manufacturer KM736V687A PRELIMINARY , TTL-Level Three-State Output. • 100-TQFP-1420A 100-TQFP-1420A FAST ACCESS TIMES GENERAL DESCRIPTION The KM736V687A is 2 , regardless of CLK. The KM736V687A is implemented with SAMSUNG s high performance CMOS technology and is ... | OCR Scan |
15 pages, |
KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A CS21 KM736V687A abstract |
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| Abstract: CHARACTERISTICS(TA=0 to 70°C, VDD=3.3V+0.3V/-0.165V) PARAMETER SYMBOL KM736V687A-7 KM736V687A-8 KM736V687A-9 UNIT MIN MAX MIN MAX MIN MAX - 12 - ns Cycle Time tCYC , KM736V687A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL , /-0.165V for 3.3V I/O The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory designed , Down State and reduces Stand-by current regardless of CLK. The KM736V687A is implemented with SAMSUNGs ... | Original |
16 pages, |
KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A 100-TQFP-1420A KM736V687A abstract |
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| Abstract: ) Parameter Symbol KM736V687A-7 Min KM736V687A-8 Max Min KM736V687A-9 Max Min Max , PRELIMINARY 64Kx36 Synchronous SRAM KM736V687A Document Title 64Kx36-Bit Synchronous Burst , KM736V687A 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION · Synchronous Operation. · , TTL-Level Three-State Output. · 100-TQFP-1420A 100-TQFP-1420A The KM736V687A is 2,359,296 bits Synchronous Static , pin controls Power Down State and reduces Stand-by current regardless of CLK. The KM736V687A is ... | Original |
15 pages, |
KM736V687A-9 KM736V687A-8 KM736V687A-7 KM736V687A KM736V687A abstract |
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| Abstract: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC C7C1334-10AC IS61NW6432-8TQ IS61NW6432-8TQ C7C1334-5AC C7C1334-5AC IS61NW6432-5TQ IS61NW6432-5TQ IS61NW6432-6TQ IS61NW6432-6TQ, C7C1334-7AC C7C1334-7AC IS61NW6432-7TQ IS61NW6432-7TQ C7C1335-5 C7C1335-5.5AC IS61C632A-5TQ IS61C632A-5TQ C7C1335-7AC C7C1335-7AC IS61C632A-7TQ IS61C632A-7TQ C7C1335-8 C7C1335-8.5AC IS61C632A-8TQ IS61C632A-8TQ C7C1337-5 C7C1337-5.5AC IS61C632A-5TQ IS61C632A-5TQ C7C1337-5AC C7C1337-5AC IS61C632A-5TQ IS61C632A-5TQ C7C1337-8 C7C1337-8.5AC IS61C632A-8TQ IS61C632A-8TQ CY62126V CY62126V IS61LV6416 IS61LV6416 CY62126V-55BAC CY62126V-55BAC IS61LV6416-20B IS61LV6416-20B CY62126V-55ZC CY62126V-55ZC IS61LV6416-20T IS61LV6416-20T CY62126V-70BAC CY62126V-70BAC IS61LV6416-20B IS61LV6416-20B CY ... | Original |
116 pages, |
KM62256D KM616V1002BT-10 KM68FV1000T-70 K6R4016V1C-JI10 KM616V1002CT-15 K6R4016V1C-FC12 k6r4008v1c-tc10 KM68U512B KM68U512BLTGI-10L KM718V949T MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 C7C1334-10AC IS61NW6432-8TQ C7C1334-10AC abstract |
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| Abstract: PRELIMINARY KM736V687 KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION · · · · · · · · · · · · The KM736V687 KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals. It can be organized as 64K words of 36 bits. And it integrates address and control registers, a 2-bit burst address ... | Original |
15 pages, |
KM736V687-9 KM736V687-8 KM736V687-10 KM736V687 KM736V687 abstract |
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| Abstract: PRELIMINARY KM736V687 KM736V687 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release May. 27. 1997 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronic ... | Original |
15 pages, |
KM736V687-9 KM736V687-8 KM736V687-10 KM736V687 100TQFP KM736V687 abstract |
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| Abstract: PRELIMINARY KM736V687 KM736V687 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release May. 27. 1997 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronic ... | Original |
15 pages, |
KM736V687-9 KM736V687-8 KM736V687-10 KM736V687 100TQFP KM736V687 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| KM736V687AT7 | Samsung Electronics | Synchronous Static RAM - Linear or interleaved burst | |
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| KM736V687AT8 | Samsung Electronics | Synchronous Static RAM - Linear or interleaved burst | |
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| KM736V687AT9 | Samsung Electronics | Synchronous Static RAM - Linear or interleaved burst | |
| ISSI Part | Industry Part | Manufacturer | Description |
| IS61LF6436A-8.5TQI Buy | KM736V687AT-9 Buy | Samsung Semiconductor | |
| IS61SF6436 Buy | KM736V687A Buy | Samsung Semiconductor | 2Mb (64K x 36) 3.3v Synchronous SRAM Flowthrough |
| IS61SF6436-8.5TQ Buy | KM736V687AT-9 Buy | Samsung Semiconductor | 2Mb (64K x 36) 3.3v Synchronous SRAM Flowthrough |