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Part : KM44V1004CT6 Supplier : Samsung Semiconductor Manufacturer : Chip One Exchange Stock : 152 Best Price : - Price Each : -
Part : KM44V1004DJ6 Supplier : Samsung Semiconductor Manufacturer : Chip One Exchange Stock : 3,758 Best Price : - Price Each : -
Part : KM44V1004DT6 Supplier : Samsung Semiconductor Manufacturer : Chip One Exchange Stock : 1,680 Best Price : - Price Each : -
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KM44V1OOOC/CL/CLL

Catalog Datasheet MFG & Type PDF Document Tags

KM44V1000C

Abstract: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES , 268 ELEC T R O N IC S 7 ^ 4 1 4 2 â¡ D lflfl'ia 5 5 1 KM44V1OOOC/CL/CLL CMOS DRAM , ) KM44V1OOOC/CL/CLL-6 KM44V1000C/CL/CLL-7 KM44V1000C/CL/CLL-8 ICC4 Standby Current (RAS=CAS=W= V dd , ns 13 271 ELEC TR O NIC S 7 ^ 4 1 4 2 00100^5 2k.O â  CMOS DRAM KM44V1OOOC/CL/CLL , H 7 'ìb m M S 1T7 KM44V1OOOC/CL/CLL CMOS DRAM TIMING DIAGRAMS READ CYCLE RÃ"S
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OCR Scan
KM44V1000C KM44V1OOOC/CL/CLL KM44V1000C/CL/CLL-6 KM44V1000C/CL/CLL-7 KM44V1000C/CL/CLL-8 KM44V1000C/CL/CLL KM44V1
Abstract: KM44V1OOOC/CL/CLL CMOS DRAM 1M x 4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES · , II packages · · · · · · · · FUNCTIONAL BLOCK DIAGRAM 267 ELECTRONICS KM44V1OOOC/CL/CLL , L K M 4 4 V 10OOCLL K M 44V 1000C /C L7C LL-6 K M 4 4V 10 0 0C /C L /C L L-7 KM44V1OOOC/CL/CLL , ELECTRONICS KM44V1OOOC/CL/CLL TEST MODE CYCLE -6 Parameter Random read or write cycle time , ific a tio n 272 ELECTRONICS KM44V1OOOC/CL/CLL CMOS DRAM TIMING DIAGRAMS READ CYCLE -
OCR Scan
20-LEAD
Abstract: . FEATURES · Part Identification - KM44C1000C/CL(5V) - KM44V1000C/CL(3.3V) · Active Power Dissipation , right to change products and specifications without notice. 83 ELECTRONICS KM44C1000C, KM44V1OOOC , KM44C1000C, KM44V1OOOC CMOS DRAM DC AND OPERATING CHARACTERISTICS (Recommended operating conditions , ELECTRONICS KM44C1000C, KM44V1OOOC CAPACITANCE(T a=25°C,V cc=5V or 3.3V, f=1MHz) Parameter Input , 14 14 88 ELECTRONICS KM44C1OOOC, KM44V1OOOC TEST MODE CYCLE CMOS DRAM -
OCR Scan
KM44C1000C/CL KM44V1000C/CL
Abstract: KM44C1OOOC, KM44V1OOOC CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode , . FEATURES â'¢ Fast Page Mode operation » Part Identification - KM44C1000C/CL(5V) - KM44V1000C/CL , , KM44V1OOOC CMOS DRAM PIN CONFIGURATION (Top Views) dqoÅ' O V -/ DQOE DQ1 C w c RÃ"5 C , 7^4142 DOEDlbS 47E KM44C1000C, KM44V1OOOC CMOS DRAM DC AND OPERATING CHARACTERISTICS , , KM44V1OOOC CMOS DRAM TEST MODE CYCLE -
OCR Scan

KM44C1000C

Abstract: a9lc Identification - KM44C1 OOOC/CL(5V) - KM44V1000C/CL(3.3V) â'¢ Active Power Dissipation Speed 3.3V 5V -5 - , , KM44V1OOOC CMOS DRAM PIN CONFIGURATION (Top Views) KM44C/V1OOOCP ' KM44C/V1 OOOC J KM44C/V1OOOCZ *â'"s , KM44C1000C, KM44V1OOOC CMOS DRAM AC CHARACTERISTICS (0°C , Material Copyrighted By Its Respective Manufacturer KM44C1000C, KM44V1OOOC CMOS DRAM TEST MODE CYCLE
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OCR Scan
a9lc samsung 470 uf 50v 7TL4142 002D174

v1000ct

Abstract: KM44V1000C . FEATURES · Part Identification - KM44C1000C/CL(5V) - KM44V1 OOOC/CL(3.3V) · Fast Page Mode operation · , without notice. 61 ELECTRONICS KM44C1OOOC, KM44V1OOOC PIN CONFIGURATION · KM44C/V1OOOCP CMOS DRAM , time tPC. 64 ELECTRONICS KM44C1000C, KM44V1OOOC CAPACITANCE(T a=25°C,V cc=5V or 3.3V, f
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OCR Scan
v1000ct

KM416C60-7

Abstract: KM48C2104B KM44V1000C-6 KM44V1000CL-6 KM44V1004C-6 General Information i - KM44V1000C-7 KM44V1OOOC-8 -
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OCR Scan
KM416C60-6 KM416C60-7 KM44V1004CL-7 KM48C2104B dram 64kx1 km416c60 KM41C1000D-6 KM41C1000D-7 KM41C1000D-8 KM41C1000D-L6 KM41C1000D-L7 KM41C1000D-L8

1004CL

Abstract: 44V16 KMM466F404AS-L7 2WxP4 KMM466F404AS-L5 KMM466F203BS-L6 KMM466F213BS-L6 ~H KMM466F404AS-L6 14 Cl El , GUIDE K M 44V1000C -6 KM44V1OOOC-7 K M 44V 1000C -8 KM44V1OOOCL-6 KM 44V 1000C L-7 K M 44V , Cl El* ELECTRONICS FUNCTION GUIDE 1 6 M B /W IMxtG KM 416V1000B-6 KM 416V1000B-L6 K M
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OCR Scan
1004CL 44V16 44C40 366F KM48V2100B 364C KMM5321200BW/BWG-6 5321200BW/BWG- KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7