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KM418C256

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km418c256

Abstract: leC 4 - 90 80 70 mA mA mA KM418C256 KM418C256L KM418C256SL leC5 - 1 200 , (Top Views) â'¢ KM418C256J/L J/SLJ KM418C256Z/LZ/SLZ D Q 11 V cc â¡ 1 0 40 â , 110 mA mA mA KM418C256L KM418C256SL leC7 - 300 150 mA mA Standby Current , KM418C256/USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION â'¢ Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144
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OCR Scan
KM418C256/USL KM418C256/L/SL KM418C256/L/SL-7 KM418C256/ KM418C256/L/SL-10 40-LEAD

KM418C256/L/SL-7

Abstract: KM418C256 KM418C256L KM418C256SL ICC5 â'" 1 200 100 mA ixA ftA CAS-Before-RAS R efresh , /L/SL CMOS DRAM PIN CONFIGURATION (Top Views) â'¢ KM418C256Z/LZ/SLZ â'¢ KM418C256J/LJ , =250pS (S L-ver), KM418C256L KM418C256SL 300 150 mA ICC7 S tandby C urrent (RAS = UCAS = , SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL â  7 T b 4 m 2 GGlBMTb 12=5 « S U G K , '¢ Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A
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KM418C256/L/SL-8

8C2S6-10

Abstract: nit ( 0 ° C < T a « 7 0 ° C , V c c = 5 .0 V ± 1 0 % , See notes 1,2) KM418C256-7 KM418C256-8 KM418C256-10 M in P aram eter M in S ym bol U n its N otes M ax M ax M in M ax , notes 1,2) KM418C256-7 KM4 8C256-8 KM41 8C2S6-10 M in P aram eter M in Sym bol , PRELIMINARY CMOS DRAM KM418C256 2 5 6 K X 1 8 Bit CMOS Dynamic RAM with Fast Page Mode , PRELIMINARY KM418C256 CMOS DRAM ABSOLUTE MAXIMUM RATINGS* S ym bol P aram eter R ating I
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km418c256

Abstract: KM418C256/L/SL-7 -8 KM418C256/USL-10 KM418C256 KM418C256L KM418C256SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/L/SL-10 Min , KM418C256L KM418C256SL IC C 7 - 300 150 mA mA ^a V V * NOTE: Iccii Icc3, Icc4 and ices are , KM418C256/L/SL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Performance range: tnAC KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/USL-10 · · · · · · · · 70ns 80ns 100ns tcAc 20ns 20ns 25ns tnc 130ns 150ns 180ns The KM418C256/USL features Fast Page Mode opera tion which
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KM418C256/USL-10
Abstract: , V c c = 5 .0 V ± 1 0 % , S ee notes 1,2) KM418C256-7 Min Max KM418C256-8 KM418C256-10 Units Notes , ° O S T a « 7 0 ° C , V Cc = 5 .0 V ± 1 0 % , See notes 1,2 ) KM418C256-7 Symbol Min Max Min 60 8 0 , Min 75 8 Max ns ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 3 8 8 8 8 6 KM418C256-8 KM418C256-10 Units Notes data-in hold time referenced to RAS Refresh period (5 1 2 cycles) W rite com m , PRELIMINARY KM418C256 CMOS DRAM 2 5 6 K X 18 Bit CMOS Dynamic RAM with Fast Page Mode -
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Abstract: KM418C256/L/SL CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES , O S process. KM418C256/L/SL CMOS DRAM PIN CONFIGURATION (Top View s) K M 418C 256J/LJ , periods may affec t device reliability. «5 SA M SU N G 112 KM418C256/L/SL CMOS DRAM , Electronics 113 KM418C256/USL CAPACITANCE CMOS DRAM (t a = 2 5 ° q S ym b ol M in M ax , , S e e notes 1, 2) KM418C256/USL-7 KM418C256/USL-à KM418C256/L/SL-10 Min Parameter Min -
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256/L/S

KM44C1000

Abstract: . 262 256K X 18 20. KM418C256
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KM44C1000 KM41C4000 KM41C1000L KM41C4001 KM41C4002 KM41C400QA KM41C400QAL

km418c256

Abstract: KM418C256J PRELIMINARY KM418C256 CMOS DRAM 256'KX(8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Perform ance range: tRAC tCAC tRC GENERAL DESCRIPTION The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications such as minicom puters, graphics and high perform ance portable com , DIAGRAM PIN CONFIGURATION (Top Views) KM418C256J f - - N RAS LCÄS Oc ä s
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al 232 nec

Abstract: TC55B4257 MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 CROSS REFERENCE GUIDE Mode F.Page Nibble S. Column Samsung KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 KM48C512 KM49C512 KM416C256 KM418C256 KM41C16000 KM44C4000 KM48C2000 KM416C1000 Toshiba TC51256 TC51257 TC51258 TC51464 TC51466 TC511000 TC511001 TC511002 TC514256 TC514258 TC514100 TC514101 TC514102 TC514400 TC514402 TC514800A
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TC514280B TC5116100 HM514402 MB832001 HN62404P PD23C8000 al 232 nec TC55B4257 NM9306 eeprom Cross Reference D41264 TC514900A TC514170B TC5116400 TC5116800
Abstract: 20 0 ns 25 ns KM418C256 Truth Table LCAS UCAS W OE D Q i^g 0 0 7 o d -
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KM416C256LL KM416C256LL-8 KM416C256LL-10 KM416C256LL-7
Abstract: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Performance range: tnA C KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 · · · · · · · · · GENERAL DESCRIPTION , V or OPEN @ tR c= KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 150 , (Top Views) KM418C256LLZ DO, DQta DO i? D Q 14 · KM418C256LLJ +: ' C DO- C DQ, C DÛ 0 1 2 3 -
OCR Scan
Abstract: Standby Current (RAS = UCAS = LCAS > V c c - 0.2V) KM418C256A KM418C256AL KM418C256ALL IC C 5 , CONFIGURATION ST Ã â  CMOS DRAM (Top Views) * KM418C256AJ/ALJ/ALLJ â'¢ KM418C256AZ/ALZ/ALLZ* KM418C256AT/ALT/ALLT â'¢ KM418C256ATR/ALTR/ALLTR â'" Vcc C i o D Q ,C 2 DO2 C 3 DQ3 C 4 DQ* C 5 Vcc \ 6 , SAMSUNG ELECTRONICS INC b? E KM418C256A/AL/ALL D â  7^4142 GGISÃT? 3b , GENERAL DESCRIPTION â'¢ Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262 -
OCR Scan
KM418C256A/AL/ALL KM418C256A/AUALL KM418C256A/AL/ALL-7 KM418C256A/AL/ALL-8 KM418C256A/AUALL-6
Abstract: tc H S 0 25 100 180 0 ns ns KM418C256 Truth Table RAS H L L L L L L L L ¡ LCAS H H L H L L -
OCR Scan
416C256LL
Abstract: 20 45 20 20 0 ns 25 20 20 ns 25 ns ns 25 20 0 KM418C256 -
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km418c256

Abstract: M418C CONFIGURATION CMOS DRAM (Top Views) KM418C256AJ/ALJ/ALLJ · KM418C256AZ/ALZ/ALLZ · KM418C256AT/ALT/ALLT , /AL/ALL-6 KM418C256A/AL7ALL-7 KM418C256A/AL/ALL-8 KM418C256A KM418C256AL KM418C256ALL KM418C256A>AUALL , KM418C256AL Icc7 - 300 iiA KM418C256ALL Iccs - 200 /*A Input Leakage Current , KM418C256A/AL/ALL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES · Performance range: tñAC KM418C256A/AUALL-6 KM418C256A/AUALL-7 KM418C256A/AL/A LL-8 · · · · · · · · · 60ns 70ns
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M418C KM418C256A/AUALL-7 KM418C256A/AL/A
Abstract: KM418C256LL-8 80ns 20ns 150ns KM418C256LL-10 100ns 25ns 180ns KM418C256LL-7 â'¢ F a , ) Parameter Symbol KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Standby Current (RAS = U CAS = LC A S = , KM418C256LL-10 Icc3 - 150 130 110 KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Icc4 - , , Address Cycling @ tnc = min.) Min KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Self Refresh , 1, 2) c Parameter Symbol KM418C256LL-7 Min Max KM418C256LL-8 KM418C256LL-10 -
OCR Scan
D0134 0G13S21
Abstract: KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 tcAc I rc 70ns 20ns 130ns 80ns 20ns 150ns , KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 S tandby C urrent (RAS = UCAS = LCAS = V,H ) M in Max , KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Icc3 - 150 130 110 Fast Page M ode C urrent* (RAS = V il, UCAS o r LCAS, A ddress C ycling @ tP = min.) C KM418C256LL-7 KM418C256LL-8 , CAS-Before-RAS Refresh C urrent* (RAS, UCAS o r LCAS C ycling @tnC= min.) KM418C256LL-7 KM418C256LL-8 -
OCR Scan
Abstract: 25 ns 25 ns 100 100 f*S 150 180 ns 0 ns 20 KM418C256 Truth -
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DD134S3

KM44C1003

Abstract: KM48C2100AL 5V±10% KM418C256B# KM418C256BL# 16M bit 16Mx1 5V±10% KM41C16000A# KM41C16000AL# KM41C16000ASL
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OCR Scan
KM44C1003 KM48C2100AL KM416C254 KM44V4100AL KM41C1000D KM41C10OOD-L KM44C256D KM44C256D-L KM41C4000C KM41C4000CL
Abstract: , A ddress C ycling @tRC= m in.) KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 S tandby C urrent , , RAS, A ddress C ycling @ tR = min.) C KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 IC 3 C - , .) KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 IC 4 C - 90 80 70 Icc5 - 100 mA - , KM418C256LL AC CHARACTERISTICS (C ontinued) KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 Min , < T a < 7 0 ° C , VC = 5 .0 V ± 1 0 % , See notes 1, 2) c KM418C256U-7 Parameter KM418C256LL-8 -
OCR Scan
40-LE

41C464

Abstract: 41C1000 20 0 ns 25 ns KM418C256 Truth Table LCAS UCAS W OE D Q i^g 0 0 7 o d
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41C256 41C464 41C1000 44C1000 424170 NEC TC55B8128 CY70199 41C257 41C258 41C466

K93C46

Abstract: MB832001 130 150 ns 19 0 0 0 ns 19 19 KM418C256 Truth Table RAS LCAS UCAS
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OCR Scan
K93C46 93cs46n hn62308 548128 hn623257 41464 416C256 514170B 514280B B81256 B81257 B81258
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