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KHB5D0N50P Datasheet

Part Manufacturer Description PDF Type
KHB5D0N50P Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original

KHB5D0N50P

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Abstract: SEMICONDUCTOR KHB5D0N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR , RATING CHARACTERISTIC SYMBOL UNIT KHB5D0N50P KHB5D0N50F Drain-Source Voltage VDSS 500 , temperature. D G S 2005. 12. 15 Revision No : 2 1/7 KHB5D0N50P/F ELECTRICAL , operating temperature. 2005. 12. 15 Revision No : 2 2/7 KHB5D0N50P/F ID - VDS ID - VGS , 3/7 KHB5D0N50P/F Qg- VGS C - VDS 1500 Gate - Source Voltage VGS (V) Capacitance (pF KEC
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D 92 M - 02 DIODE KHB5D0N50P/F
Abstract: SEMICONDUCTOR KHB5D0N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR , N MAXIMUM RATING (Tc=25 CHARACTERISTIC ) 1 SYMBOL RATING KHB5D0N50P KHB5D0N50F H , temperature. D G S 2006. 1. 13 Revision No : 0 1/7 KHB5D0N50P/F ELECTRICAL CHARACTERISTICS , KHB5D0N50P/F ID - VGS ID - VDS VGS TOP : 15.0 V 10.0 V 9.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V , Junction Temperature Tj ( C) 3/7 KHB5D0N50P/F Qg- VGS C - VDS 12 Frequency = 1MHz KEC
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KHB5D0N50P1 KHB5D0N50F1
Abstract: 500V, ID= 5.0A ·Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V ·Qg(typ.) = 21nC KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P MAXIMUM RATING (Tc=25) RATING CHARACTERISTIC SYMBOL KHB5D0N50P Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1 , /7 KHB5D0N50P/F/F2 ELECTRICAL CHARACTERISTICS (Tc=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN , operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB5D0N50P/F/F2 2007. 5. 10 KEC
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KHB5D0N50P/F/F2 KHB5D0N50F2 100A/
Abstract: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast , KHB5D0N50P KHB5D0N50F2 500 Gate-Source Voltage VGSS 30 KHB5D0N50F V V 2.9 20 20 , Drain-Source Voltage Revision No : 0 1/7 KHB5D0N50P/F/F2 ELECTRICAL CHARACTERISTICS (Tc , operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB5D0N50P/F/F2 Fig2. ID - VGS KEC
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Abstract: SEMICONDUCTOR KHB5D0N50P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1 5D0N50P 501 2 No. Item 3 Marking Description KHB KHB 5D0N50P 5D0N50P Revision - - Lot No. 501 Device Name 5 Revision No : 2 0~9 : 2000~2009 01 2006. 2. 6 Year Week 01 : 01th Week 1/1 - -
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5D0N50 we 501
Abstract: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES 2007. 5. 10 Revision No : 0 1/7 - -
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Abstract: KHB5D0N50D/I KHB013N50P/F KHB5D0N50P/F KHB9D0N50P/F KHB020N50 20N50 500 9.0 20 RDS(ON) Typ , Status KHB5D0N50P/F 830 500V 5.0A M.P KHB6D0N40P/F 730 400V 6.0A M.P , 7N60 600V 7.5A M.P KHB5D0N50P/F 830 500V 5.0A M.P KHB9D0N50P/F 840 500V 9.0A M.P KHB9D0N50P/F KHB5D0N50P/F KHB011N40P/F KHB6D0N40P/F TO220-IS TO220-AB , KHB8D8N25P/F KHB6D0N40P/F KHB011N40P/F KHB5D0N50P/F KHB9D0N50P/F KHB020N50 KHB1D0N60D/I KHB2D0N60P/F KEC
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9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c 2N7002 2N7002A 2N7002K KTX421U KTX321U 2N7000
Abstract: -220IS 400V 4A/5A Package VCEO IC KHB5D0N50P/F2 KF5N50P/F 4A 1A 500V KF13N50P/F -
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KTC3003 KHB9D5N20P1 KF5N50 IC 1N4007 kf12n60 diode 400V 4A 1N4007 diode bridge TO220IS FLP-14 1N4007 DO-41 MJE13003 MJE13005
Abstract: . PKG. KHB5D0N50P/F 830 KHB8D0N50P/F VDS[V] ID[A] Rds(on), Max [m] TO-220AB/IS KEC
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CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KRC102M KRC112M KTN2369 KTC3194 KTC3197 KTC3198
Abstract: KHB5D0N50P MOSFET KEC KIA278R15PI Intergrated Circuit KEC KIA6419F Intergrated Circuit -
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khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN
Abstract: KHB5D0N50P MOSFET KEC KIA278R15PI Intergrated Circuit KEC KIA6419F Intergrated Circuit -
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KIA78*pI KIA78*p TRANSISTOR 2N3904 KID65004AF TRANSISTOR mosfet KIA324P KDS160 2N3904 BCV71 KDB2151E KDS160E 2N3904C
Abstract: KHB3D0N80P KHB3D0N90F KHB3D0N90P KHB4D5N60F KHB4D5N60P KHB5D0N50F KHB5D0N50P KHB6D0N40F KHB6D0N40P KEC
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oz960 MB4213 MN1280 F10P048 MJE13007 KIA7812A KIA78M05 PQ30RV31 KIA378R00PI LM324/N KIA324P/F TA79005
Abstract: characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB5D0N50P1/F1 , KHB5D0N50P1 KHB5D0N50F1 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 73 0.74 150 -55 150 5.0 2.9 20 390 9.2 3.5 , 2006. 1. 13 Revision No : 0 1/7 KHB5D0N50P1/F1 ELECTRICAL CHARACTERISTICS (Tc , ) Essentially independent of operating temperature. 2006. 1. 13 Revision No : 0 2/7 KHB5D0N50P1/F1 , Temperature Tj ( C) 2006. 1. 13 Revision No : 0 3/7 KHB5D0N50P1/F1 C - VDS 1600 1400 12 Qg KEC
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KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor smd transistor zaa Z02W100V Z02W10V Z02W11V Z02W12V Z02W13V Z02W15V